BYM26AGP [GULFSEMI]
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:200V to 1000V CURRENT: 2.3A; 烧结玻璃结快速开关塑封整流电压: 200V至1000V电流: 2.3A型号: | BYM26AGP |
厂家: | GULF SEMICONDUCTOR |
描述: | SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:200V to 1000V CURRENT: 2.3A |
文件: | 总2页 (文件大小:75K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BYM26AGP THRU BYM26EGP
SINTERED GLASS JUNCTION
FAST SWITCHING PLASTIC RECTIFIER
VOLTAGE:200V to 1000V
CURRENT: 2.3A
DO-201AD
FEATURE
High temperature metallurgically bonded construction
Sintered glass cavity free junction
Capability of meeting environmental standard of
MIL-S-19500
High temperature soldering guaranteed
350°C /10sec/0.375”lead length at 5 lbs tension
Low leakage current Typical Ir<0.1µA
Excellent stability
Guaranteed avalanche energy absorption capability
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity: color band denotes cathode
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
BYM26
AGP
BYM26
BGP
BYM26
CGP
BYM26
DGP
BYM26
EGP
SYMBOL
units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Vrrm
Vrms
Vdc
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
Maximum DC blocking Voltage
1000
Reverse avalanche breakdown voltage
at IR = 0.1 mA
Maximum Average Forward Rectified
V
(BR)R (min)
If(av)
Ifsm
500
700
2.3
45
900
1100
V
A
300
Current 10mm lead length at Ta =55°C
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Forward Voltage at rated Forward
A
Vf
2.65
10
V
Current and 25°C
non-repetitive peak reverse avalanche energy
(Note 1)
Ersm
mJ
10.0
µ
µ
A
A
Maximum DC Reverse Current
at rated DC blocking voltage
Ta =25°C
Ta =125°C
Ir
150.0
Maximum Reverse Recovery Time (Note 2)
Trr
Cj
30
75
nS
pF
Typical Junction Capacitance
Typical Thermal Resistance
(Note 3)
(Note 4)
75.0
20.0
Rθja
Tstg, Tj
°C /W
°C
Storage and Operating Junction Temperature
-65 to +175
Note: 1. L = 120 mH; Tj = Tj max prior to surge; inductive load switched off
2.Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
3.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
4.Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted
Rev.A1
www.gulfsemi.com
RATINGS AND CHARACTERISTIC CURVES BYM26AGP THRU BYM26EGP
1
Rev.A1
www.gulfsemi.com
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