BYT42AGP [GULFSEMI]

SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.25A; 烧结玻璃结快速开关塑封整流电压: 50〜 1000V电流: 1.25A
BYT42AGP
型号: BYT42AGP
厂家: GULF SEMICONDUCTOR    GULF SEMICONDUCTOR
描述:

SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.25A
烧结玻璃结快速开关塑封整流电压: 50〜 1000V电流: 1.25A

开关
文件: 总2页 (文件大小:75K)
中文:  中文翻译
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BYT42AGP THRU BYT42MGP  
SINTERED GLASS JUNCTION  
FAST SWITCHING PLASTIC RECTIFIER  
VOLTAGE:50 TO 1000V  
CURRENT: 1.25A  
DO-41\DO-204AL  
FEATURE  
High temperature metallurgically bonded construction  
Sintered glass cavity free junction  
Capability of meeting environmental standard of  
MIL-S-19500  
High temperature soldering guaranteed  
350°C /10sec/0.375”lead length at 5 lbs tension  
Operate at Ta =55°C with no thermal run away  
Typical Ir<0.1µA  
Fast Soft Recovery Rectifier  
MECHANICAL DATA  
Terminal: Plated axial leads solderable per  
MIL-STD 202E, method 208C  
Case: Molded with UL-94 Class V-0 recognized Flame  
Retardant Epoxy  
Polarity: color band denotes cathode  
Mounting position: any  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)  
BYT42 BYT42  
BYT42  
DGP  
BYT42  
GGP  
BYT42  
JGP  
BYT42  
KGP  
BYT42  
MGP  
SYMBOL  
units  
BGP  
AGP  
50  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
Vrrm  
Vrms  
Vdc  
100  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
35  
70  
Maximum DC blocking Voltage  
Maximum Average Forward Rectified  
50  
100  
1000  
If(av)  
Ifsm  
Vf  
1.25  
30.0  
1.4  
A
A
V
Current 3/8”lead length at Ta =55°C  
Peak Forward Surge Current 8.3ms single  
half sine-wave superimposed on rated load  
Maximum Forward Voltage at rated Forward  
Current and 25°C  
5.0  
µ
µ
A
A
Maximum DC Reverse Current  
at rated DC blocking voltage  
Ta =25°C  
Ta =150°C  
Ir  
150.0  
Maximum Reverse Recovery Time (Note 1)  
Trr  
150  
200  
nS  
Non repetitive reverse  
avalanche energy  
I
(BR)R=0.4A  
ER  
10.0  
55.0  
mJ  
°C /W  
°C  
Typical Thermal Resistance  
(Note 2)  
R(ja)  
Storage and Operating Junction Temperature  
Tstg, Tj  
-65 to +175  
Note:  
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A  
2. Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted  
Rev.A1  
www.gulfsemi.com  
RATINGS AND CHARACTERISTIC CURVES BYT42AGP THRU BYT42MGP  
1
1 Rev.A1  
www.gulfsemi.com  

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