ES3C [GULFSEMI]

SURFACE MOUNT FAST ULTRAFAST RECTIFIER VOLTAGE:50 TO 600V CURRENT:3.0A; 表面装载快速超快整流器VOLTAGEï¼ ?? 50〜 600V CURRENTï¼ ?? 3.0A
ES3C
型号: ES3C
厂家: GULF SEMICONDUCTOR    GULF SEMICONDUCTOR
描述:

SURFACE MOUNT FAST ULTRAFAST RECTIFIER VOLTAGE:50 TO 600V CURRENT:3.0A
表面装载快速超快整流器VOLTAGEï¼ ?? 50〜 600V CURRENTï¼ ?? 3.0A

二极管 光电二极管 IOT 超快速恢复二极管
文件: 总2页 (文件大小:175K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ES3A THRU ES3J  
SURFACE MOUNT FAST  
ULTRAFAST RECTIFIER  
VOLTAGE50 TO 600V  
CURRENT3.0A  
SMCDO-214AB  
FEATURE  
Ideal for surface mount pick and place application  
Low profile package  
Built-in strain relief  
High surge capability  
High temperature soldering guaranteed  
260/10sec/at terminals  
Glass passivated chip  
Ultrafast recovery time for high efficiency  
MECHANICAL DATA  
TerminalSolder plated, solderable per MIL-STD-750,  
Method 2026  
CaseJEDEC DO-214AB molded plastic body over  
passivated chip  
Polaritycolor band denotes cathode  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25, unless otherwise stated,  
for capacitive load, derate current by 20)  
SYMBOL  
ES3A  
ES3B  
ES3C  
ES3D  
ES3G  
ES3J  
units  
Vrrm  
Vrms  
Vdc  
50  
35  
50  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
100  
70  
150  
105  
150  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
V
V
Maximum DC blocking Voltage  
100  
Maximum Average Forward Rectified  
at TL =100  
Peak Forward Surge Current 8.3ms single  
half sine- wave superimposed on rated load  
Maximum Instantaneous Forward Voltage at  
rated forward current 3.0A  
If(av)  
Ifsm  
Vf  
3.0  
A
A
V
100.0  
0.90  
20  
1.25  
25  
1.7  
35  
10.0  
Maximum DC Reverse Current  
at rated DC blocking voltage  
Ta =25℃  
Ta =100℃  
Ir  
µA  
500.0  
Trr  
Cj  
Maximum Reverse Recovery Time (Note1 )  
nS  
pF  
45.0  
12.0  
Typical Junction Capacitance  
Typical Thermal Resistance  
(Note 2)  
(Note 3)  
Rth(jl)  
Tstg, Tj  
/W  
-55 to +150  
Storage and Operating Junction Temperature  
Note:  
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc  
3. Thermal Resistance from Junction to terminal mounted on 5×5mm copper pad area  
Rev.A2  
www.gulfsemi.com  
RATINGS AND CHARACTERISTIC CURVES ES3A THRU ES3J  
Rev.A2  
www.gulfsemi.com  

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