GP10B [GULFSEMI]

SINTERED GLASS JUNCTION PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.0A; 烧结玻璃结塑封整流电压: 50〜 1000V电流: 1.0A
GP10B
型号: GP10B
厂家: GULF SEMICONDUCTOR    GULF SEMICONDUCTOR
描述:

SINTERED GLASS JUNCTION PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.0A
烧结玻璃结塑封整流电压: 50〜 1000V电流: 1.0A

文件: 总2页 (文件大小:157K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GP10A THRU GP10M  
SINTERED GLASS JUNCTION  
PLASTIC RECTIFIER  
VOLTAGE:50 TO 1000V  
CURRENT: 1.0A  
DO-41\DO-204AL  
FEATURE  
High temperature metallurgically bonded construction  
Sintered glass cavity free junction  
Capability of meeting environmental standard of  
MIL-S-19500  
High temperature soldering guaranteed  
350°C /10sec/0.375”lead length at 5 lbs tension  
Operate at Ta =55°C with no thermal run away  
Typical Ir<0.1µA  
MECHANICAL DATA  
Terminal: Plated axial leads solderable per  
MIL-STD 202E, method 208C  
Case: Molded with UL-94 Class V-0 recognized Flame  
Retardant Epoxy  
Polarity: color band denotes cathode  
Mounting position: any  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,  
for capacitive load, derate current by 20%)  
GP  
GP  
GP  
10D  
GP  
10G  
GP  
10J  
GP  
10K  
GP  
10M  
SYMBOL  
units  
10A  
10B  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
Vrrm  
Vrms  
Vdc  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC blocking Voltage  
Maximum Average Forward Rectified  
100  
1000  
If(av)  
1.0  
A
A
V
Current 3/8”lead length at Ta =75°C  
Peak Forward Surge Current 8.3ms single  
half sine-wave superimposed on rated load  
Maximum Instantaneous Forward Voltage at  
1.0A  
Ifsm  
Vf  
30.0  
1.1  
8.0  
1.2  
7.0  
Maximum full load reverse current full cycle  
Ir(av)  
Ir  
30.0  
µ
A
Average at 75°C  
5.0  
µ
µ
µ
A
A
S
Maximum DC Reverse Current  
at rated DC blocking voltage  
Typical Reverse Recovery Time  
Ta =25°C  
Ta =125°C  
(Note 1)  
50.0  
Trr  
Cj  
2.0  
Typical Junction Capacitance  
Typical Thermal Resistance  
(Note 2)  
(Note 3)  
PF  
°C /W  
°C  
R(ja)  
Tstg, Tj  
55.0  
Storage and Operating Junction Temperature  
-65 to +175  
Note:  
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc  
3. Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted  
Rev.A4  
www.gulfsemi.com  
RATINGS AND CHARACTERISTIC CURVES GP10A THRU GP10M  
1 Rev.A4  

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