1N5945B [GXELECTRONICS]
GLAS S PASSIVA TED JUNC TION S ILICON ZENER DIODE VO LTA GE - 1 1 T O 200 Vo lts; GLAS S PASSIVA TED JUNC TION S ILICON稳压二极管VO LTA GE - 1 1〜200武LTS
| 型号： | 1N5945B |
| 厂家： | 
Gaomi Xinghe Electronics Co., Ltd. |
| 描述： | GLAS S PASSIVA TED JUNC TION S ILICON ZENER DIODE VO LTA GE - 1 1 T O 200 Vo lts |
| 文件： | 总3页 (文件大小：451K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5926B THRU 1N5956B
星合 子
XINGHE ELECTRONICS
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
VOLTAGE - 11 TO 200 Volts
Power - 1.5 Watts
FEATURES
DO-41
l
l
l
l
l
Low profile package
Built-in strain relief
Glass passivated junction
Low inductance
Typical IR less than 1 £gA above 11V
l
High temperature soldering :
260 ¢J/10 seconds at terminals
l
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
MECHANICAL DATA
Case: JEDEC DO-41 Molded plastic over passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes positive end (cathode)
Standard Packaging: 52mm tape
Weight: 0.012 ounce, 0.3 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ¢J ambient temperature unless otherwise specified.
SYMBOL
VALUE
1.5
UNITS
Watts
¢J
PD
DC Power Dissipation @ TL=75 , Measure at Zero Lead Length(Note 1, Fig. 1)
15
mW/¢J
Derate above 75 ¢J
Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated
load(JEDEC Method) (Note 1,2)
IFSM
10
Amps
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 to +150
¢J
NOTES:
1. Mounted on 5.0mm2(.013mm thick) land areas.
2. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum.
3. ZENER VOLTAGE (Vz) MEASUREMENT Nominal zener voltage is measured with the device
function in thermal equilibrium with ambient temperature at 25 ¢J.
4.ZENER IMPEDANCE (Zz) DERIVATION ZZT are measured by dividing the ac voltage drop across
the device by the accurrent applied. The specified limits are for IZ(ac) = 0.1 IZ, (dc) with the ac freqency = 60Hz.
1
GAOMI XINGHE ELECTRONICSCO.,LTD.
WWW.SDDZG.COM
TEL:0536-2210359
QQ:464768017
1N5926B THRU 1N5956B
星合 子
XINGHE ELECTRONICS
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts
¢J
ELECTRICAL CHARACTERISTICS (TL=30 unless otherwise noted) (VF=1.5Volts Max @ IF=200mA)
Device
Nominal Zener Test current
Maximum DC
Zener Current
Max reverse
Leakage Current
Maximum Zener Impedance (Note 2.)
Voltage Vz @ IZT
IZT
mA
volts
IZM
mAdc
ZZT @ IZT
Ohms
ZZk @ IZK
Ohms
IZK
IR
VR
Volts
(Note 1.)
£g
A
@
mA
@
1N5926B
1N5927B
1N5928B
1N5929B
1N5930B
1N5931B
1N5932B
1N5933B
1N5934B
1N5935B
1N5936B
1N5937B
1N5938B
1N5939B
1N5940B
1N5941B
1N5942B
1N5943B
1N5944B
1N5945B
1N5946B
1N5947B
1N5948B
1N5949B
1N5950B
1N5951B
1N5952B
1N5953B
1N5954B
1N5955B
1N5956B
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
34.1
31.2
28.8
25
23.4
20.8
18.7
17
15.6
13.9
12.5
11.4
10.4
9.6
8.7
8
7.3
6.7
6
5.5
5
4.6
4.1
3.7
3.4
3.1
2.9
2.5
2.3
2.1
1.9
5.5
6.5
7
9
10
12
14
17.5
19
23
26
33
38
45
53
67
70
86
100
120
140
160
200
250
300
380
450
600
700
900
1200
550
550
550
600
600
650
650
650
700
700
750
800
850
900
950
1000
1100
1300
1500
1700
2000
2500
3000
3100
4000
4500
5000
6000
6500
7000
8000
0.25
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
8.4
9.1
9.9
136
125
115
100
93
83
75
68
62
55
50
45
41
38
34
31
29
26
24
22
20
18
16
15
13
12
11
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56
62.2
69.2
76
83.6
91.2
98.8
114
121.6
136.8
152
10
9
8
7
* TOLERANCE AND VOLTAGE DESIGNATION Tolerance designation - The type numbers listed indicate a
¡ Ó
tolerance of
5%
RATING AND CHARACTERISTICS CURVES
1N5926B THRU 1N5956B
8
6
VZ@IZT
2.5
2
4
2
1.5
1
0
-2
-4
0.5
0
20
40
60
80
100 120 140 150 180
3
4
6
8
10
12
¢J
TL, LEAD TEMPERATURE (
)
VZ, ZENER VOLTAGE (VOLTS)
Fig. 1-STEADY STATE POWER DERATING
Fig. 2-ZENER VOLTAGE-TO 12 VOLTS
2
GAOMI XINGHE ELECTRONICSCO.,LTD.
WWW.SDDZG.COM
TEL:0536-2210359
QQ:464768017
1N5926B THRU 1N5956B
星合 子
XINGHE ELECTRONICS
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
VOLTAGE - 11 TO 200 Volts
Power - 1.5 Watts
200
1K
TJ - 25
¢J
IZ(ms) = 0.1 IZ(dc)
VZ@IZT
500
100
70
VZ = 150V
91V
200
100
50
62V
50
30
20
10
5
22V
20
12V
2
1
6.8V
100 200 500
10
10
0.5
1
2
5
10
20
50
20
30
50
70
100
200
IZ, ZENER TEST CURRENT (mA)
VZ, ZENER VOLTAGE (VOLTS)
Fig. 3-ZENER VOLTAGE-10 TO 200 VOLTS
Fig. 4-EFFECT OF ZENER CURRENT
1K
200
500
IZ (dc) = 1mA
RECTANGULAR NONREPETITIVE
300
200
100
70
50
WAVEFORM TJ = 25 PRIOR TO
¢J
INITIAL PULSE
100
50
30
20
10mA
10
30
20
7
5
3
2
5
20mA
IZ (ms) = 0.1 IZ (dc)
30 50 70
10
.1
.2 .3
5
1
2 3 5
10
20
50
100
7
10
20
100
PW, PULSE WIDTH(ms)
VZ, ZENER VOLTAGE (VOLTS)
100
100
50
30
20
50
30
20
10
10
5
3
2
5
3
2
1
1
0.5
0.3
0.2
0.5
0.3
0.2
0.1
0
0.1
0
1
2
3
4
5
6
7
8
9
10
10 20 30 40 50 60 70 80 90 100
VZ, ZENER VOLTAGE (VOLTS)
VZ, ZENER VOLTAGE (VOLTS)
Fig. 7-VZ = 6.8 THRU 10 VOLTS
Fig. 8-VZ = 12 THRU 82 VOLTS
3
GAOMI XINGHE ELECTRONICSCO.,LTD.
WWW.SDDZG.COM
TEL:0536-2210359
QQ:464768017
相关型号：
1N5945BGE3
Zener Diode, 68V V(Z), 5%, 1.5W, Silicon, Unidirectional, DO-204AL, HERMETIC SEALED, GLASS, DO-41, 2 PIN
MICROSEMI
1N5945BLEADFREE
Zener Diode, 68V V(Z), 5%, 1.5W, Silicon, Unidirectional, DO-41, DO-41, 2 PIN
CENTRAL
1N5945BPA
Zener Diode, 68V V(Z), 10%, 1.19W, Silicon, Unidirectional, DO-204AL, PLASTIC, DO-41, 2 PIN
MICROSEMI
1N5945BPBTR
Zener Diode, 68V V(Z), 5%, 1.19W, Silicon, Unidirectional, DO-204AL, PLASTIC, DO-41, 2 PIN
MICROSEMI
©2020 ICPDF网 联系我们和版权申明