MB05S [GXELECTRONICS]
Glass passivated chip junctions; 玻璃钝化芯片路口
| 型号： | MB05S |
| 厂家： | 
Gaomi Xinghe Electronics Co., Ltd. |
| 描述： | Glass passivated chip junctions |
| 文件： | 总2页 (文件大小：842K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MB1S-MB10S
星合 子
XINGHE ELECTRONICS
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 0.5 A
FEATURES
This series is UL recognized under Component Index,
file number E239431
Glass passivated chip junctions
Plastic materrial has U/L flammabilityclassification
94V-O
MBS
4.6±0.2
High surge overload rating: 35A peak
Saves space on printed circuit boards
High temperature soldering guaranteed:
260°C/10 seconds at 5 lbs. (2.3kg) tension
MECHANICAL DATA
3.8±0.2
Case: Molded plastic bodyover passivated junctions
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
0.6±0.1
2.5±0.25
1.0±0.15
6.8±0.2
0.3±0.1
Polarity: Polaritysymbols marked on body
Dimensions in inches and (millimeters)
Mounting Position: Any
Dimensions in millimeters
Weight: 0.0078 ounce, 0.22 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.
MB05S MB1S MB2S MB4S MB6S MB8S MB10S
UNITS
50
35
50
100
70
200
140
200
400
280
600
420
600
800
560
800
1000
700
V
V
V
Maximum recurrent peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
100
400
1000
Maximum DC blocking voltage
Maximum average forw ard
1)
0.5
A
IF(AV)
2)
0.8
output current
@TA=25
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
IFSM
A
V
35.0
Maximum instantaneous forw ard voltage
@ 0.4 A
VF
1.0
A
Maximum reverse current
@TA=25
5.0
0.5
13
μ
IR
mA
pF
at rated DC blocking voltage @TA=100
Typical junction capacitance per leg (NOTE 3)
CJ
Typical thermal resistance per leg (NOTE 1)
R θJA
RθJL
85
20
/W
(NOTE 2)
Operating junction temperature range
Storage temperature range
- 55 ---- + 150
TJ
TSTG
- 55 ---- + 150
NOTES: (1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3mm) pads
(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20mm) mounted on 0.05 x 0.05" (1.3 x 1.3mm) solder pad
(3) Measured at 1.0 MHz and applied reverse v oltage of 4.0 Volts
1
GAOMI XINGHE ELECTRONICSCO.,LTD.
WWW.SDDZG.COM
TEL:0536-2210359
QQ:464768017
MB1S-MB10S
星合 子
XINGHE ELECTRONICS
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 0.5 A
FIG.2 -- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT PER LEG
FIG.1 -- DERATING CURVE FOR OUTPUT
RRECTIFIED CURRENT
35
TA=40
SINGLE HALF SINE-WAVE
30
0.8
(JEDEC Method)
Aluminum Substrate
25
20
0.7
GLASS
EPOXY
f=60Hz
0.6
P.C.B.
15
0.5
0.4
0.3
f=50Hz
10
1.0 CYCLE
5.0
0.2
0
1
10
100
0.1
RESISTIVE OR INDUCTIVE LOAD
0
0
30
60
90
120
150
NUMBER OF CYCLES AT 50/60Hz
AMBIENT TEMPERATURE,
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC
100
TJ=125
10
FIG.3 -- TYPICAL FORWARD VOLTAGE
KKKKCHARACTERISTICS PER LEG
1.0
0.1
TJ=25
10
.01
0
20
40
60
80
100
1
TJ=25
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
0.1
PULSE WIDTH=300µS
FIG.5 -- TYPICAL JUNCTION CAPACITANCE PER
BBBBBBB ELEMENT
0.01
0.2 0.4 0.6
100
0.8 1.0
1.2 1.4
60
f=1MHz
TJ=25
40
20
10
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
4
2
1
.1 .2
.4
1.0
2
4
10 20 40
100
REVERSE VOLTAGE, VOLTS
2
GAOMI XINGHE ELECTRONICSCO.,LTD.
WWW.SDDZG.COM
TEL:0536-2210359
QQ:464768017
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