S2JW [GXELECTRONICS]
Surface Mount General Purpose Silicon Rectifiers;
| 型号： | S2JW |
| 厂家： | 
Gaomi Xinghe Electronics Co., Ltd. |
| 描述： | Surface Mount General Purpose Silicon Rectifiers |
| 文件： | 总2页 (文件大小：442K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S2AW THRU S2MW
Surface Mount General Purpose Silicon Rectifiers
星合 子
XINGHE ELECTRONICS
Reverse Voltage - 50 to 1000 V
Forward Current - 2 A
SOD-123FL
FEATURES
Cathode Band
Top View
▪For surface mounted applications
▪Low profile package
▪Glass Passivated Chip Juntion
▪Ideal for automated placement
2.8±0.2
▪Lead free in comply with EU RoHS 2011/65/EU directives
0.6±0.25
MECHANICAL DATA
▪Case: SOD-123FL
▪Terminals: Solderable per MIL-STD-750, Method 2026
▪Approx. Weight:15mg 0.00048oz
3.7±0.2
Dimensions in millimeters
Maximum Ratings and Electrical characteristics
Ratings at 25°Cambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
Symbols
VRRM
S2AW
50
S2BW
100
70
S2DW
200
140
200
S2GW
400
280
400
S2JW
600
420
600
S2KW
800
560
800
S2MW
1000
700
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Units
V
V
V
VRMS
35
Maximum DC Blocking Voltage
VDC
50
100
1000
Maximum Average Forward Rectified Current
at Ta = 65 °C
IF(AV)
2
A
A
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
(JEDEC Method)
IFSM
60
Maximum Instantaneous Forward Voltage at 2 A
VF
IR
1.1
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °C
Ta =125 °C
5
50
μA
1）
Typical Junction Capacitance
Cj
pF
°C/W
°C
30
50
2）
Typical Thermal Resistance
RθJA
Operating and Storage Temperature Range
Tj, Tstg
-55 ~ +150
1）Measured at 1 MHz and applied reverse voltage of 4 V D.C
2）Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
1
GAOMI XINGHE ELECTRONICS CO.,LTD.
WWW.SDDZG.COM
S2AW THRU S2MW
Surface Mount General Purpose Silicon Rectifiers
星合 子
XINGHE ELECTRONICS
Reverse Voltage - 50 to 1000 V
Forward Current - 2 A
Fig.2 Typical Instaneous Reverse
Characteristics
Fig.1 Forward Current Derating Curve
100
2.5
2.0
TJ=150°C
TJ=125°C
10
TJ=100°C
1.5
1.0
1.0
TJ=75°C
TJ=50°C
Single phase half-wave 60 Hz
resistive or inductive load
0.1
0.5
0.0
TJ=25°C
0.01
25
50
75
100
125
150
175
0
200
400
600
800
Ambient Temperature (°C)
Instaneous Reverse Voltage (V)
Fig.3 Typical Forward Characteristic
Fig.4 Typical Junction Capacitance
2.0
1.5
100
10
1
TJ=25°C
1.0
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0.1
1.0
10
100
Reverse Voltage (V)
Instaneous Forward Voltage (V)
2
GAOMI XINGHE ELECTRONICS CO.,LTD.
WWW.SDDZG.COM
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