SS512BF [GXELECTRONICS]

Surface Mount Schottky Barrier Rectifier;
SS512BF
型号: SS512BF
厂家: Gaomi Xinghe Electronics Co., Ltd.    Gaomi Xinghe Electronics Co., Ltd.
描述:

Surface Mount Schottky Barrier Rectifier

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中文:  中文翻译
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SS52BF THRU SS520BF  
Surface Mount Schottky Barrier Rectifier  
Reverse Voltage - 20 to 200V  
Forward Current - 5.0A  
星合 子  
XINGHE ELECTRONICS  
SMBF  
Cathode Band  
Top View  
FEATURES  
0.145(3.70)  
0.137(3.50)  
0.087(2.20)  
0.075(1.90)  
Metal silicon junction, majority carrier conduction  
• For surface mounted applications  
• Low power loss, high efficiency  
0.174(4.40)  
0.166(4.20)  
0.012(0.30)  
0.006(0.15)  
0.055(1.40)  
0.043(1.10)  
• High forward surge current capability  
• For use in low voltage, high frequency inverters,  
free wheeling, and polarity protection applications  
0.047(1.20)  
0.028(0.70)  
MECHANICAL DATA  
Case: SMBF  
Terminals: Solderable per MIL-STD-750, Method 2026  
• Approx. Weight: 57mg / 0.002oz  
0.217(5.50)  
0.201(5.10)  
Dimensions in inches and (millimeters)  
Absolute Maximum Ratin s and Electrical characteristics  
g
Ratings at 25°Cambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,  
for capacitive load, derate by 20 %  
Symbols  
SS52BF  
20  
SS54BF SS56BF SS58BF SS510BF SS512BF SS515BF SS520BF  
Units  
V
Parameter  
Maximum Repetitive Peak Reverse Voltage  
VRRM  
VRMS  
VDC  
40  
28  
40  
60  
42  
60  
80  
56  
80  
100  
70  
120  
84  
150  
105  
150  
200  
140  
200  
Maximum RMS voltage  
14  
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
20  
100  
120  
V
IF(AV)  
5.0  
A
Peak Forward Surge Current,8.3ms  
Single Half Sine-wave Superimposed  
on Rated Load (JEDEC method)  
IFSM  
VF  
IR  
150  
A
V
Max Instantaneous Forward Voltage at 5 A  
0.45  
0.55  
0.70  
0.85  
Maximum DC Reverse Current Ta = 25°C  
1.0  
50  
mA  
pF  
at Rated DC Reverse Voltage  
Typical Junction Capacitance  
Typical Thermal Resistance  
Ta =100°C  
1)  
800  
500  
Cj  
RθJA  
Tj  
2)  
40  
°C/W  
°C  
Operating Junction Temperature Range  
Storage Temperature Range  
-55 ~ +125  
-55 ~ +150  
Tstg  
°C  
1)  
Measured at 1MHz and applied reverse voltage of 4 V D.C.  
2)  
P.C.B. mounted with 0.5 X 0.5" (12.7 X 12.7 mm) copper pad areas.  
1
GAOMI XINGHE ELECTRONICS CO.,LTD.  
WWW.SDDZG.COM  
SS52BF THRU SS520BF  
Surface Mount Schottky Barrier Rectifier  
Reverse Voltage - 20 to 200V  
Forward Current - 5.0A  
星合 子  
XINGHE ELECTRONICS  
Fig.2 Typical Reverse Characteristics  
104  
Fig.1 Forward Current Derating Curve  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
100LFM  
TJ=100°C  
103  
TJ=75°C  
102  
101  
TJ=25°C  
Single phase half wave resistive  
or inductive P.C.B mounted on  
0.5×0.5"(12.7×12.7mm) pad areas  
100  
25  
50  
75  
100  
125  
150  
0
20  
40  
60  
80  
100  
Lead Temperature (°C)  
Percent of Rated Peak Reverse Voltage(%)  
Fig.3 Typical Forward Characteristic  
Fig.4 Typical Junction Capacitance  
TJ=25°C  
20  
10  
1000  
500  
100  
1
SS52BF  
SS54BF  
SS56BF/SS58BF  
SS510BF/SS520BF  
SS52BF/SS54BF  
SS56BF-SS520BF  
20  
10  
0.1  
0
0.5  
1.0  
1.5 2.0  
0.1  
1
10  
100  
Reverse Voltage (V)  
Instaneous Forward Voltage (V)  
Fig.6- Typical Transient Thermal Impedance  
Fig.5 Maximum Non-Repetitive Peak  
Forward Surage Current  
175  
150  
100  
125  
100  
10  
75  
50  
25  
00  
8.3 ms Single Half Sine Wave  
(JEDEC Method)  
1
0.01  
1
10  
100  
0.1  
1
10  
100  
Number of Cycles at 60Hz  
t, Pulse Durationsec)  
2
GAOMI XINGHE ELECTRONICS CO.,LTD.  
WWW.SDDZG.COM  

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