UF5403 [GXELECTRONICS]

3.0A ULTRAFAST DIODE; 3.0A超快速二极管
UF5403
型号: UF5403
厂家: Gaomi Xinghe Electronics Co., Ltd.    Gaomi Xinghe Electronics Co., Ltd.
描述:

3.0A ULTRAFAST DIODE
3.0A超快速二极管

二极管
文件: 总2页 (文件大小:325K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UF5400 – UF5408  
星合 子  
XINGHE ELECTRONICS  
3.0A ULTRAFAST DIODE  
Features  
!
Diffused Junction  
!
!
!
!
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
A
B
A
High Surge Current Capability  
Mechanical Data  
C
!
!
Case: DO-201AD, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 1.2 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
D
DO-201AD  
Min  
Dim  
A
Max  
!
!
!
!
!
25.4  
B
7.20  
9.50  
1.30  
5.30  
C
1.20  
D
4.80  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
UF  
UF  
UF  
UF  
UF  
UF  
UF  
UF  
Characteristic  
Symbol  
Unit  
5400 5401 5402 5403 5404 5406 5407 5408  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
300  
210  
400  
280  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
(Note 1)  
3.0  
@TA = 55°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
150  
A
Forward Voltage  
@IF = 3.0A  
VFM  
IRM  
1.0  
1.3  
1.7  
V
Peak Reverse Current  
@TA = 25°C  
10  
100  
µA  
At Rated DC Blocking Voltage @TA = 100°C  
Reverse Recovery Time (Note 2)  
Typical Junction Capacitance (Note 3)  
Operating Temperature Range  
trr  
Cj  
50  
80  
75  
50  
nS  
pF  
°C  
°C  
Tj  
-65 to +125  
-65 to +150  
Storage Temperature Range  
TSTG  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case  
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.  
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
1
GAOMI XINGHE ELECTRONICSCO.,LTD.  
WWW.SDDZG.COM  
TEL:0536-2210359  
QQ:464768017  
UF5400 – UF5408  
星合 子  
XINGHE ELECTRONICS  
3.0A ULTRAFAST DIODE  
ꢀ ꢀ  
4
100  
Single phase half wave  
Resistive or Inductive load  
UF5400 - UF5403  
10  
3
2
1
UF5404  
UF5406 - UF5408  
1.0  
0.1  
Tj = 25°C  
Pulse width = 300µs  
2% duty cycle  
0.01  
0
0.6  
1.0  
1.4  
1.8  
0
25  
50  
75  
100 125  
150 175  
TA, AMBIENT TEMPERATURE (°C)  
Fig. 1 Forward Current Derating Curve  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 2 Typical Forward Characteristics  
200  
100  
100  
8.3ms single half  
sine-wave  
UF5400 - UF5404  
UF5406 - UF5408  
10  
10  
1
1
10  
100  
1
10  
100  
VR, REVERSE VOLTAGE (V)  
Fig. 4 Typical Junction Capacitance  
NUMBER OF CYCLES AT 60Hz  
Fig. 3 Peak Forward Surge Current  
trr  
+0.5A  
50NI (Non-inductive)  
10NI  
Device  
Under  
Test  
(-)  
Pulse  
Generator  
(Note 2)  
0A  
(+)  
50V DC  
Approx  
-0.25A  
(-)  
1.0Ω  
NI  
(+)  
Oscilloscope  
(Note 1)  
Notes:  
-1.0A  
1. Rise Time = 7.0ns max. Input Impedance = 1.0M, 22pF.  
2. Rise Time = 10ns max. Input Impedance = 50.  
Set time base for 5/10ns/cm  
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit  
2
GAOMI XINGHE ELECTRONICSCO.,LTD.  
WWW.SDDZG.COM  
TEL:0536-2210359  
QQ:464768017  

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