G8451-103 [HAMAMATSU]

Photo Diode;
G8451-103
型号: G8451-103
厂家: HAMAMATSU CORPORATION    HAMAMATSU CORPORATION
描述:

Photo Diode

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中文:  中文翻译
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InGaAs PIN photodiodes  
G8421/G8371/G5851 series  
Long wavelength type  
(Cut-off wavelength: 1.85 to 1.9 ꢀm)  
Features  
Applications  
Long cut-off wavelength: 1.85 to 1.9 ꢀm  
3-pin TO-18 package: low price  
Optical power meter  
Gas analyzer  
Thermoelectrically cooled TO-18 package: low dark current  
NIR (near infrared) photometry  
Active area: 0.3 to 3 mm  
Accessories (Optional)  
Heatsink for one-stage TE-cooled type  
Heatsink for two-stage TE-cooled type  
A3179  
A3179-01  
Temperature controller for TE-cooled type C1103-04  
Speciꢁcations / Absolute maximum ratings  
Absolute maximum ratings  
Dimensional  
Active  
Thermistor  
power  
TE-cooler  
allowable  
current  
Reverse  
voltage  
VR  
Operating  
temperature  
Topr  
Storage  
temperature  
Tstg  
outline/  
area  
Type No.  
Package  
Cooling  
Window  
material  
dissipation  
(mm)  
0.3  
0.5  
1  
3  
0.3  
1  
(mW)  
(A)  
(V)  
(°C)  
(°C)  
G8421-03  
G8421-05  
G8371-01  
G8371-03  
G5851-103  
G5851-11  
G5851-13  
G5851-203  
G5851-21  
G5851-23  
+
,
-
TO-18  
TO-5  
TO-8  
Non-cooled  
-
-
-40 to +85  
-55 to +125  
2
One-stage  
TE-cooled  
1.5  
1.0  
3  
0.2  
-40 to +70  
-55 to +85  
0.3  
1  
3  
Two-stage  
TE-cooled  
.
TO-8  
Electrical and optical characteristics (Typ. unless otherwise noted)  
Measurement  
Condition  
Cut-off  
frequency  
fc  
Terminal  
Spectral  
response  
range  
Peak  
sensitivity  
wavelength  
p  
Photo  
sensitivity  
S
Shunt  
Dark current  
ID  
VR=1 V  
capacitance  
Ct  
resistance  
Rsh  
D
NEP  
=p  
=p  
Element  
temperature  
VR=1 V  
VR=1 V  
f=1 MHz  
Type No.  
=p  
VR=10 mV  
RL=50 ꢂ  
Min.  
Typ.  
Typ.  
Max.  
(nA)  
300  
500  
-3 dB  
(°C)  
25  
(ꢀm)  
(ꢀm)  
(A/W) (A/W) (nA)  
(MHz)  
(pF)  
8
20  
80  
800  
8
80  
800  
8
80  
800  
(M)  
1.5  
1
0.5  
0.05  
15  
5
0.5  
35  
(cm·Hz1/2/W) (W/Hz1/2  
)
G8421-03  
G8421-05  
G8371-01  
G8371-03  
G5851-103  
G5851-11  
G5851-13  
G5851-203  
G5851-21  
G5851-23  
30  
50  
100  
2000 20000  
3
100  
80  
40  
3
100  
40  
3
100  
40  
3
9 × 10-14  
1.5 × 10-13  
2 × 10-13  
8 × 10-13  
3 × 10-14  
6 × 10-14  
2 × 10-13  
2 × 10-14  
4 × 10-14  
1.5 × 10-13  
0.9 to 1.9  
5 × 1011  
1000  
30  
100  
2000  
15  
50  
1000  
1.75  
0.9  
1.1  
-10  
-20  
0.9 to 1.87  
0.9 to 1.85  
10  
1.5 × 1012  
2.5 × 1012  
200  
1.5  
5
10  
1
100  
The G8421/G8371/G5851 series may be damaged by electrostatic discharge, etc. Be carefull when using the G8421/G8371/G5851 series.  
1
www.hamamatsu.com  
InGaAs PIN photodiodes  
G8421/G8371/G5851 series  
Spectral response  
Photo sensitivity temperature characteristic  
(Typ.)  
(Typ.)  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
2
T=25 °C  
1
T=-10 °C  
0
T=-20 °C  
1.6  
-1  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
0.8  
1.0  
1.2  
1.4  
1.8  
2.0  
2.2  
Wavelength (μm)  
Wavelength (μm)  
KIRDB0221EA  
KIRDB0208EA  
Dark current vs. reverse voltage  
Non-cooled type  
TE-cooled type  
(Typ. Ta=25 °C  
)
(Typ.)  
G5851-13 (T=-10 °C  
10 μA  
1 μA  
1 μA  
100 nA  
10 nA  
)
G5851-23 (T=-20 °C  
)
G8371-03  
G5851-21  
(T=-20 °C  
G5851-11 (T=-10 °C  
)
)
G8371-01  
100 nA  
G8421-03  
10 nA  
1 nA  
G8421-05  
0.1  
1 nA  
G5851-103 (T=-10 °C  
)
G5851-203 (T=-20 °C  
)
100 pA  
0.01  
1
10  
0.01  
0.1  
1
10  
Reverse voltage (V)  
Reverse voltage (V)  
KIRDB0232EA  
KIRDB0223EA  
Terminal capacitance vs. reverse voltage  
Shunt resistance vs. element temperature  
(Typ. Ta=25 °C, f=1 MHz)  
(Typ. VR=10 mV)  
10 nF  
10 MΩ  
G8421-03  
G5851-103/-203  
G8371-03  
G5851-13/-23  
1 MΩ  
100 kΩ  
10 kΩ  
G8421-05  
1 nF  
G8371-01  
G5851-11/-21  
G8371-01  
G5851-11/-21  
100 pF  
10 pF  
G8371-03  
G5851-13/-23  
G8421-05  
1 kΩ  
G8421-03  
G5851-103/-203  
1 pF  
100 Ω  
0.1  
1
10  
-40  
-20  
0
20  
40  
60  
80  
90  
100  
Reverse voltage (V)  
Element temperature (°C)  
KIRDB0233EA  
KIRDB0234EA  
2
InGaAs PIN photodiodes  
G8421/G8371/G5851 series  
Thermistor temperature characteristic  
Cooling characteristics of TE-cooler  
(Typ.)  
(Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W)  
106  
40  
20  
One-stage  
TE-cooled type  
105  
0
-20  
104  
Two-stage  
TE-cooled type  
-40  
-60  
103  
-40  
-30  
-20  
-10  
0
10  
20  
30  
0
0.4  
0.8  
1.2  
1.6  
Element temperature (°C)  
Current (A)  
KIRDB0116EA  
KIRDB0231EA  
Current vs. voltage (TE-cooler)  
(Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W)  
1.6  
1.4  
One-stage  
TE-cooled type  
1.2  
1.0  
0.8  
0.6  
Two-stage  
TE-cooled type  
0.4  
0.2  
0
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
Voltage (V)  
KIRDB0115EB  
3
InGaAs PIN photodiodes  
G8421/G8371/G5851 series  
Dimensional outlines (unit: mm)  
+ G8421-03/-05, G8371-01  
, G8371-03  
9.2 0.2  
8.1 0.1  
5.4 0.2  
4.7 0.1  
Window  
5.9 0.1  
Window  
3.0 0.1  
Photosensitive  
surface  
Photosensitive  
surface  
0.45  
lead  
0.45  
lead  
5.1 0.3  
2.5 0.2  
1.5 Max.  
Case  
Case  
KIRDA0150EA  
KIRDA0151EA  
- G5851-103/-11/-13  
. G5851-203/-21/-23  
15.3 0.2  
14 0.2  
15.3 0.2  
14 0.2  
Window  
10 0.2  
Window  
10 0.2  
Photosensitive  
surface  
Photosensitive  
surface  
0.45  
lead  
0.45  
lead  
10.2 0.2  
10.2 0.2  
5.1 0.2  
5.1 0.2  
Detector (anode)  
Detector (cathode)  
TE-cooler (-)  
TE-cooler (+)  
Thermistor  
Detector (anode)  
Detector (cathode)  
TE-cooler (-)  
TE-cooler (+)  
Thermistor  
KIRDA0029EC  
KIRDA0031EC  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.  
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2008 Hamamatsu Photonics K.K.  
www.hamamatsu.com  
HAMAMATSU PHOTONICS K.K., Solid State Division  
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184  
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218  
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658  
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10  
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777  
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01  
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741  
4
Cat. No. KIRD1046E06 Sep. 2008 DN  

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