概述
数据手册P10090-21 概述
InAs photovoltaic detector 砷化铟光电探测器
P10090-21 数据手册
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InAs photovoltaic detector
P10090 series
Low noise, high reliability infrared detectors (for 3 µm band)
InAs photovoltaic detectors have high sensitivity in the infrared region around 3 µm as with PbS photoconductive detectors, and also
feature low noise and high reliability. P10090 series is a new family of InAs photovoltaic detectors that deliver even higher sensitivity than
our convensional products (P8079 series).
Features
Applications
Low noise
Gas analysis
High reliability
Laser detection
High detectivity (D*)
Available in multi-element arrays (custom product)
Infrared spectrophotometry
Radiation thermometer
Accessories (Optional)
Heatsink for one-stage TE-cooled type
Heatsink for two-stage TE-cooled type
Temperature controller
Infrared detector module with preamp
Amplifiers for InAs photovoltaic detector
(custom-made product)
A3179
A3179-01
C1103-04
P4631-01
ꢀ Specifications/Absolute maximum ratings
Absolute maximum ratings
Dimensional
Active
area
Thermistor
power
dissipation
(mW)
Reverse
voltage
VR
Operating
temperature temperature
Storage
outline/
Window
material *
Type No.
Package
Cooling
Topr
(°C)
Tstg
(°C)
(mm)
(V)
P10090-01
P10090-11
ꢀ/S
TO-5
TO-8
Non-cooled
One-stage
TE-cooled
Two-stage
TE-cooled
-
φ1
0.5
-40 to +60
-40 to +80
ꢀ/S
0.2
P10090-21
* Window material S: sapphire glass
ꢀ Electrical and optical characteristics (Typ. unless otherwise noted)
Measurement
Rise time
tr
VR=0 V
RL=50 Ω
0 to 63 %
Peak
sensitivity
wavelength
λp
Photo
condition
Element
temperature
T
Cut-off
wavelength
λc
sensitivity Shunt resistance
S
λ=λp
D
NEP
λ=λp
Rsh
(λp, 600, 1)
Type No.
Min.
(Ω)
40
250
1000
Typ.
(Ω)
70
Min.
Typ.
(cm· Hz1/2/W)
(cm· Hz1/2/W)
(°C)
25
-10
-30
(µm)
3.35
3.30
3.25
(µm)
3.65
3.55
3.45
(A/W)
1.0
(W/Hz1/2)
(µs)
0.70
0.45
0.30
P10090-01
P10090-11
P10090-21
3.0 × 109 4.5 × 109 1.5 × 10-11
1.0 × 1010 1.6 × 1010 5.3 × 10-12
400
1.2
1300 2.0 × 1010 3.2 × 1010 2.8 × 10-12
1
InAs photovoltaic detector P10090 series
ꢀ Spectral response (D*)
ꢀ Spectral response
(Typ.)
(Typ.)
1011
1.4
P10090-21 (T= -30 ˚C)
1.2
1.0
0.8
1010
P10090-11
(T= -10 ˚C)
109
108
107
T= -10 ˚C
0.6
P10090-01
(T=25 ˚C)
T= -30 ˚C
0.4
0.2
T=25 ˚C
0
1.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
1.5
2.0
2.5
3.0
3.5
4.0
WAVELENGTH (µm)
WAVELENGTH (µm)
KIRDB0356EB
KIRDB0381EA
ꢀ Dark current vs. reverse voltage
ꢀ Shunt resistance vs. element temperature
(Typ.)
(Typ.)
100 kΩ
1 mA
T=25 ˚C
10 kΩ
1 kΩ
100 µA
T= -10 ˚C
T= -30 ˚C
100 Ω
10 µA
10 Ω
1 Ω
1 µA
0.01
-100 -80
-60 -40
-20
0
20
40
60
0.1
1
ELEMENT TEMPERATURE (˚C)
REVERSE VOLTAGE (V)
KIRDB0382EA
KIRDB0383EA
ꢀ Linearity
ꢀ Sensitivity uniformity
(Typ. λ=1.55 µm)
(Typ. Ta=25 ˚C, λ=1.3 µm)
110
100
90
1000
T= -10 ˚C
T=10 ˚C
T=25 ˚C
80
100
10
70
60
50
40
30
20
1
1
-600
-400
-200
0
200
400
600
10
100
1000
10000
POSITION ON ACTIVE AREA (µm)
INCIDENT LIGHT LEVEL (µW)
KIRDB0384EA
KIRDB0385EA
2
InAs photovoltaic detector P10090 series
ꢀ Current vs. voltage of TE-cooled type
ꢀꢀCooling characteristics of TE-cooled type
(Typ. Ta=25 ˚C, thermal resistance of heat-sink=3 ˚C/W)
(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
30
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
20
10
ONE-STAGE
TE-COOLED
ONE-STAGE
TE-COOLED TYPE
0
-10
-20
TWO-STAGE
TE-COOLED
-30
TWO-STAGE
TE-COOLED TYPE
-40
-50
0
0.4
0.8
1.2
1.6
0
0.2
0.4
0.6
0.8
1.0
1.2
TE-COOLED CURRENT (A)
VOLTAGE (V)
KIRDB0115EB
KIRDB0181EA
ꢀ Thermistor temperature characteristic
(Typ.)
106
105
104
103
-40
-20
0
20
ELEMENT TEMPERATURE (
˚C)
KIRDB0116EA
ꢀ Measurement circuit
CHOPPER
600 Hz
DETECTOR
r.m.s.
METER
BAND-PASS
FILTER
fo=600 Hz
∆f=60 Hz
INCIDENT ENERGY: 245 µW/cm2
BLACK BODY
KIRDC0075EA
3
InAs photovoltaic detector P10090 series
ꢀ Dimensional outlines (unit: mm)
ꢀꢀP10090-01
ꢀꢀP10090-11/-21
9.1 ± 0.3
8.1 ± 0.1
15.3 ± 0.2
14 ± 0.2
WINDOW
5.5 ± 0.1
WINDOW
10 ± 0.2
PHOTOSENSITIVE
SURFACE
PHOTOSENSITIVE
SURFACE
0.45
LEAD
0.45
LEAD
5.1 ± 0.2
10.2 ± 0.2
1.0 MAX.
DETECTOR (ANODE)
DETECTOR (CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
CASE
P10090-11 P10090-21
a
4.5 ± 0.2
6.9 ± 0.2
5.1 ± 0.2
KIRDA0119EA
KIRDA0191EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KIRD1099E03
Mar. 2007 DN
4
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