P2532-01_15 [HAMAMATSU]
Infrared detectors utilizing photoconductive effects;
| 型号： | P2532-01_15 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | Infrared detectors utilizing photoconductive effects |
| 文件： | 总4页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
I N F R A R E D D E T E C T O R
PbS photoconductive detector
,
P2532-01 P2682-01
Infrared detectors utilizing photoconductive effects
Features
Applications
Room temperature operation
Radiation thermometers
Flame monitors
Water content analyzers
Food ingredient analysis
Spectrophotometers
Makes PbS cells useful in a wide range of applications
including radiation thermometers and flame monitors
High sensitivity
Large active area
Low price
Lower temperature detection limit: 100 ˚C
Thermoelectrically cooled types
Accessories (Optional)
Cooling a PbS cell increases sensitivity and improves
S/N, so cooled types are widely used in precision
photometry such as in analytical instruments.
Heatsink for one-stage TE-cooled type
Heatsink for two-stage TE-cooled type
Temperature controller for TE-cooled type
A3179
A3179-01
C1103-04
Preamplifier for PbS/PbSe photoconductive detector C3757-02
Infrared detector module with preamp Cooled type
P4638
ꢀ Specification / Absolute maximum ratings
Absolute maximum ratings
Dimensional
outline/
Active Thermistor
area resistance
Thermistor TE-cooler
current
dissipation dissipation
Operating Storage
Supply
voltage
temperature temperature
power
Type No.
Package
TO-8
Cooling
Window
Topr
(°C)
Tstg
(°C)
material *1
(mm)
4 × 5
(mW)
0.2
(A)
1.5
(V)
(kΩ)
One-stage
TE-cooled
Two-stage
TE-cooled
P2532-01
P2682-01
ꢀ/S
ꢀ/S
-30 to +50 -55 to +50
9
100
1.0
ꢀ Electrical and optical characteristics (Typ. unless otherwise noted)
Photo sensitivity *2
Measurement
condition
Element
temperature
Peak
sensitivity
wavelength
Cut-off
Rise time Dark
S
λ=λp
Vs=15 V
D
D
wavelength
resistance
tr
(
p, 600, 1)
λ
(500, 600, 1)
0 to 63 %
Rd
λc
Type No.
λp
Min.
(V/W)
3 × 104
Typ.
(V/W)
8 × 104
Min.
Typ.
Max.
(µs)
(cm·Hz1/2/W) (cm·Hz1/2/W) (cm·Hz1/2/W)
(°C)
-10
-20
(µm)
2.4
2.5
(µm)
3.1
3.2
(MΩ)
0.5 to 10
0.8 to 10
P2532-01
P2682-01
5 × 108
1 × 109
1 × 1011
600
6 × 104 1.6 × 105
8 × 108
2 × 109
2 × 1011
*1: Window material S: sapphire glass
*2: Chopping frequency: 600 Hz, load resistance: nearly equal to detector element dark resistance
1
PbS photoconductive detector P2532-01, P2682-01
ꢀ Spectral response
ꢀꢀS/N vs. supply voltage
(Typ. Ta=25 ˚C)
(Typ.)
800
600
400
200
0
8
7
6
5
4
3
2
1
0
100
-20 ˚C
-10 ˚C
SIGNAL
80
60
25 ˚C
40
NOISE
LIGHT SOURCE: BLACK BODY 500 K
INCIDENT ENERGY: 4.8 µW/cm2
CHOPPING FREQUENCY: 600 Hz
FREQUENCY BANDWIDTH: 60 Hz
20
0
1
2
3
4
5
10
20
40
50
60
0
30
SUPPLY VOLTAGE (V)
WAVELENGTH (µm)
KIRDB0046EA
KIRDB0279EA
If voltage of higher than 60 V is applied,
the noise increases exponentially, de-
grading the S/N. The device should be
operated at 60 V or less.
ꢀꢀPhoto sensitivity temperature characteristic
ꢀꢀS/N vs. chopping frequency
(Typ. Ta=25 ˚C)
(Typ.)
103
102
101
103
LIGHT SOURCE: BLACK BODY 500 K
INCIDENT ENERGY: 4.8 µW/cm2
SUPPLY VOLTAGE: 15 V
tr: 200 µs
S/N
S
102
LIGHT SOURCE: BLACK BODY 500 K
INCIDENT ENERGY: 4.8 µW/cm2
CHOPPING FREQUENCY: 600 Hz
SUPPLY VOLTAGE: 15 V
N
101
101
102
103
-20
-10
0
10
20
30
40
50
60
CHOPPING FREQUENCY (Hz)
ELEMENT TEMPERATURE (˚C)
KIRDB0048EB
KIRDB0047EB
Cooling the device enhances its sensi-
tivity, but the sensitivity also depends
on the load resistance in the circuit.
Increasing the chopping frequency re-
duces the 1/f noise and results in an S/N
improvement. The S/N can also be im-
proved by narrowing the noise bandwidth
using a lock-in amplifier.
ꢀ Dark resistance, rise time temperature characteristics
ꢀ Photo sensitivity linearity
(Typ.)
(Typ. Ta=25 ˚C, FULLY ILLUMINATED)
103
102
101
100
10-1
10-2
DARK RESISTANCE
102
RISE TIME
DEPENDENT ON NEP
10-8 10-7 10-6
INCIDENT ENERGY (W/cm2)
101
10-3
10-9
10-5
10-4
-20 -10
0
10
20
30
40
50
60
ELEMENT TEMPERATURE (˚C)
KIRDB0050EA
KIRDB0049EB
By making the incident light spot smaller
than the active area, the upper limit of
the linearity becomes lower.
2
PbS photoconductive detector P2532-01, P2682-01
ꢀ Cooling characteristics of TE-cooler
ꢀ Current vs. voltage characteristics of TE-cooler
(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
1.6
40
20
1.4
ONE-STAGE
TE-COOLED
1.2
1.0
0.8
0.6
0.4
0.2
0
ONE-STAGE
TE-COOLED
0
TWO-STAGE
TE-COOLED
-20
-40
-60
TWO-STAGE
TE-COOLED
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VOLTAGE (V)
CURRENT (A)
KIRDB0171EA
KIRDB0115EB
ꢀ Thermistor temperature characteristic
(Typ.)
106
105
104
103
-40
-30
-20
-10
0
10
20
30
ELEMENT TEMPERATURE (˚C)
KIRDB0116EA
ꢀꢀConnection example (P2682-01)
CABLE (SUPPLIED WITH C3757-02)
POWER SUPPLY FOR PREAMP
2-CONDUCTOR
SHIELDED CABLE
SIGNAL
PROCESSING
CIRCUIT
AMP
LOCK-IN AMP or
SPECTRUM ANALYZER
P2682-01
+
C3757-02
A3179-01
TEMPERATURE
CONTROLLER
DETECTOR AND
HEATSINK
C1103-04
C4696
BNC CONNECTOR CABLE
(SOLD SEPARATELY)
CABLE (SUPPLIED WITH C1103-04)
CHOPPER
Connect C1103-04 and power supply
ground terminals together.
KIRDC0003EB
3
PbS photoconductive detector P2532-01, P2682-01
ꢀ Dimensional outlines (unit: mm)
ꢀꢀP2532-01
ꢀꢀP2682-01
15.3 ± 0.2
14 ± 0.2
15.3 ± 0.2
14 ± 0.2
WINDOW
10 ± 0.2
WINDOW
10 ± 0.2
PHOTOSENSITIVE
SURFACE
PHOTOSENSITIVE
SURFACE
0.45
LEAD
0.45
LEAD
10.2 ± 0.2
10.2 ± 0.2
DETECTOR
DETECTOR
TE-COOLER (-)
DETECTOR
DETECTOR
TE-COOLER (+)
TE-COOLER (-)
THERMISTOR
TE-COOLER (+)
THERMISTOR
5.1 ± 0.2
5.1 ± 0.2
KIRDA0116EA
KIRDA0117EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat.No.KIRD1019E07
Sept. 2004DN
4
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