P4247-16 [HAMAMATSU]
InSb photovoltaic detector; 锑化铟探测器光电
| 型号： | P4247-16 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | InSb photovoltaic detector |
| 文件： | 总4页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
I N F R A R E D D E T E C T O R
InSb photovoltaic detector
P5968/P4247 series
High-speed response, low-noise photovoltaic detector
P5968/P4247 series are photovoltaic detectors having high sensitivity in the so-called atmospheric window at 3 to 5 µm. Custom devices are also
available to meet your special request.
Features
Applications
Cooling hold time: 8 hours
Thermometers (radiometers)
Thermal imaging
Remote sensing
Gas analysis
FTIR
Spectrophotometry
Repumpable metal dewars (liquid nitrogen cooling)
allow 8-hour hold time. Starling cooling type without
pour-filled liquid nitrogen is also provided.
Built-in preamp type available
Built-in preamp allows high precision photometry.
P7751-01 (Uses P5968-060.)
P7751-02 (Uses P5968-200.)
Accessories (Optional)
Amplifier for InSb photovoltaic detector
C4159-01 (active aera: smaller than φ1 mm)
C4159-04 (active area: φ2 mm)
[Custom amplifier is also available for use
with P5968-300 (3 mm dia. type)]
ꢀ Specification / Absolute maximum ratings
Absolute maximum ratings
Dimensional
outline/
Window
Reverse
voltage
VR
Operating Storage
temperature temperature
Active area
Number of
element
Type No.
Package
Cooling
Topr
(°C)
Tstg
(°C)
material *1
(mm)
(V)
0.5
P5968-060
P5968-100
P5968-200
P5968-300
P5968-105
P4247-16
P4247-44
1
f0.6
1
f1
Liquid
nitrogen
➀/Si
Metal dewar
1
1
f2
f3
-40 to +60
-55 to +60
➁/Si
➂/Si
Metal
Stirling
Liquid
nitrogen
1
f1
0.25 × 1.4 *2
0.45 × 0.45 *3
1 × 16
4 × 4
Metal dewar
*1: Window material Si: silicon (with AR coated)
*2: Size per 1 element (16 element array)
*3: Size per 1 element (4 × 4 element array)
ꢀ Electrical and optical characteristics (Typ. unless otherwise noted)
Measurement
Terminal
capacitance
Rise time
tr
VR=0 V
RL=50 W
0 to 63 %
Peak
sensitivity
wavelength
Photo
sensitivity
condition
Element
temperature
Cut-off
wavelength
lc
Shunt
resistance
*
*
NEP
l=lp
D
(lp, 1200, 1)
D
(500 K, 1200, 1)
Ct
VR=0 V
f=1 MHz
S
l=lp
Rsh
Type No.
lp
T
Min.
Typ.
(cm·Hz1/2/W) (cm·Hz1/2/W) (cm·Hz1/2/W)
(°C)
(A/W)
2.5
(W/Hz1/2
)
(ns)
30
(pF)
30
(mm)
(mm)
(W)
P5968-060
P5968-100
P5968-200
P5968-300
P5968-105
P4247-16
P4247-44
1 × 107
1 × 106
1 × 105
3.3 × 10-13
5.5 × 10-13
70
100
200
900
100
100
60
1.1 × 10-12 150
-196
5.3
5.5
5 × 104 2 × 1010 3 × 1010 1.6 × 1011 1.6 × 10-12 600
1 × 106
1 × 107
1 × 107
5.5 × 10-13
6.5 × 10-13
5.0 × 10-13
70
70
60
1
InSb photovoltaic detector P5968/P4247 series
ꢀ Spectral response
ꢀ S, N vs. chopping frequency
(Typ.)
103
(Typ. T= -196 ˚C)
1012
LOAD RESISTANCE: 1 kΩ
SUPPLY VOLTAGE: 0 V
ELEMENT TEMPERATURE: -196 ˚C
S
102
1011
N
101
100
1010
1
2
3
4
5
6
102
103
104
105
106
CHOPPING FREQUENCY (Hz)
WAVELENGTH (µm)
KIRDB0063EC
KIRDB0065ED
ꢀ Measurement circuit
CHOPPER
1200 Hz
DETECTOR
r.m.s.
METER
BAND-PASS
FILTER
fo=1200 Hz
f=120 Hz
INCIDENT ENERGY: 2.64 µW/cm2
BLACK BODY
500 K
KIRDC0004EA
2
InSb photovoltaic detector P5968/P4247 series
ꢀ Dimensional outlines (unit: mm)
➀ P5968-060/-100/-200/-300
LN2 FILL PORT 12.5
63.5
28.5
1
43 1 46
1
PUMP-OUT PIPE 9.5
SIGNAL
OUTPUT LEAD
PHOTOSENSITIVE
SURFACE
8.5 ꢀ.5
66.8
1
DETECTOR (ANODE)
NC
DETECTOR (CATHODE)
KIRDA0131EC
➁ P5968-105
unit: mm)
PUMP-OUT BULB 10 MAX.
(4 ×) 56UNC-2B DEPTH: 5.5 4PL
MOUNTING HOLE
10.6 MAX.
29.0 MAX.
12.7
26.7+-00.01
22
PHOTOSENSITIVE
SURFACE
FOV
SIGNAL OUTPUT LEAD
MOUNTING SURFACE
43
(4 ×) 2.5
58
36.4
27.4 MAX.
50.1 MAX.
14.5 MAX.
50.3 MAX.
81.1 MAX.
KIRDA0130EA
3
InSb photovoltaic detector P5968/P4247 series
➂ P4247 series
5ꢀ.8
LN
2
FILL PORT 12.7
18 PIN CONNECTOR
53.7
1ꢀꢀ.8
76.1
28.6
5.74
PLUG
15.6
PUMP-OUT BULB
79.5
PHOTOSENSITIVE
SURFACE
12
1
53.7
KIRDA0132EA
ꢀ Details of multi-element detectors (unit: µm)
For custom devices with different number of elements, size and package, please consult our sales office.
P4247-16
P4247-44
475ꢀ
45ꢀ
51ꢀ
3ꢀꢀ
ACTIVE AREA
25ꢀ
ACTIVE AREA
KIRDA0006EA
KIRDA0146EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2ꢀꢀ2 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) ꢀ53-434-3311, Fax: (81) ꢀ53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 36ꢀ Foothill Road, P.O.Box 691ꢀ, Bridgewater, N.J. ꢀ88ꢀ7-ꢀ91ꢀ, U.S.A., Telephone: (1) 9ꢀ8-231-ꢀ96ꢀ, Fax: (1) 9ꢀ8-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 1ꢀ, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) ꢀ8152-375ꢀ, Fax: (49) ꢀ8152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 ꢀꢀ, Fax: 33-(1) 69 53 71 1ꢀ
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 1ꢀ Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 17ꢀ7-294888, Fax: (44) 17ꢀ7-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-5ꢀ9-ꢀ31-ꢀꢀ, Fax: (46) 8-5ꢀ9-ꢀ31-ꢀ1
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 2ꢀꢀ2ꢀ Arese, (Milano), Italy, Telephone: (39) ꢀ2-935-81-733, Fax: (39) ꢀ2-935-81-741
Cat. No. KIRD1039E03
Nov. 2002 DN
4
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