P6606-320 [HAMAMATSU]
InSb photoconductive detector; 锑化铟探测器的光电导
| 型号： | P6606-320 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | InSb photoconductive detector |
| 文件： | 总4页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
I N F R A R E D D E T E C T O R
InSb photoconductive detector
P6606 series
Thermoelectrically cooled detectors capable of long-term measurements
Features
Applications
Thermoelectric cooling ensures high speed and high
sensitivity up to 6.5 µm.
Photoconductive element that changes electrical
resistance by input of IR radiation
Environment measurements (gas analysis, etc.)
Radiation thermometers (5 µm band)
FTIR
IR laser detection
Easy-to-use detector/preamp modules are also available.
Accessories (optional)
Heatsink for one-stage TE-cooled type
Heatsink for two-stage TE-cooled type
A3179
A3179-01
Heatsink for three-stage TE-cooled type A3179-04
Temperature controller
C1103-05 (-75 to -25 ˚C)
C1103-07 (-30 to +20 ˚C)
C5185
Preamp
Infrared detector module with preamp
C4631-03 (P6606-310)
Specifications / Absolute maximum ratings
ꢀ
Absolute maximum ratings
Dimensional
Active
Thermistor TE-cooler
power power
dissipation dissipation
Operating
Storage
temperature temperature
outline/
Window
Allowable
current
area
Type No.
Package
Cooling
Topr
(°C)
Tstg
(°C)
material *1
(mm)
1 × 1
(mW)
(A)
1.5
1.0
(mA)
40
P6606-110
P6606-210
P6606-305
P6606-310
P6606-320
One-stage TE-cooled
Two-stage TE-cooled
/S
TO-8
➀
➁
0.5 × 0.5
TO-3 Three-stage TE-cooled 1 × 1
2 × 2
0.2
20
40
60
-40 to +60 -55 to +60
/S
1.0
*1: Window material S: Sapphire glass
Electrical and optical characteristics (Typ. unless otherwise noted)
ꢀ
Measurement
condition
Element
temperature
T
Photo
sensitivity
S
Peak
sensitivity
wavelength
lp
Cut-off
wavelength
lc
Rise time
tr
0 to 63 %
Dark
resistance
Rd
*
*
D
(lp, 1200, 1)
D
(500, 1200, 1)
l=lp
Vs=15 V
Type No.
Min.
Typ.
(°C)
-10
-30
(V/W)
10
50
(cm·Hz1/2/W) (cm·Hz1/2/W) (cm·Hz1/2/W)
(mm)
(mm)
6.7
6.5
(ms)
(W)
20
P6606-110
P6606-210
P6606-305
P6606-310
P6606-320
7 × 107
1.5 × 108
1 × 109
1 × 109
5 × 108
2 × 108
5 × 108
2 × 109
2 × 109
1 × 109
1 × 109
2.5 × 109
1 × 1010
1 × 1010
5 × 109
25
5.5
2500
650
150
0.4
150
80
-60
6.3
80
1
InSb photoconductive detector P6606 series
ꢀ Spectral response
ꢀ D* vs. element temperature
(Typ.)
(Typ. T= -60 ˚C)
1011
1010
109
1011
1010
109
108
108
-60
-50
-40
-30
-20
-10
0
2
3
4
5
6
7
ELEMENT TEMPERATURE (˚C)
WAVELENGTH (µm)
KIRDB0166EB
KIRDB0167EA
ꢀ Thermistor temperature characteristic
ꢀ
Cooling characteristics of TE-cooler
[Typ. Ta=25 ˚C, thermal resistance of heatsink=3 ˚C/W (one and two-stage TE-cooler),
1.2 ˚C/W (three-stage TE-cooler)]
(Typ.)
1 MΩ
40
20
ONE-STAGE
TE-COOLED TYPE
100 kΩ
10 kΩ
1 kΩ
0
TWO-STAGE
TE-COOLED TYPE
-20
-40
-60
-80
THREE-STAGE
TE-COOLED TYPE
0
0.4
0.8
1.2
1.6
-80
-60
-40
-20
0
20
40
TE-COOLER CURRENT (A)
ELEMENT TEMPERATURE (˚C)
KIRDB0168EA
KIRDB0177EA
2
InSb photoconductive detector P6606 series
ꢀ Current vs. voltage characteristics of TE-cooler
[Typ. Ta=25 ˚C, thermal resistance of heatsink=3 ˚C/W (one and two-stage TE-cooler),
1.2 ˚C/W (three-stage TE-cooler)]
1.6
1.4
ONE-STAGE
TE-COOLED TYPE
1.2
1.0
0.8
0.6
0.4
0.2
0.0
THREE-STAGE
TE-COOLED TYPE
TWO-STAGE
TE-COOLED TYPE
0
0.5
1.0
1.5
2.0
2.5
VOLTAGE (V)
KIRDB0176EB
ꢀ Measurement circuit
CHOPPER
1200 Hz
r.m.s.
METER
BAND-PASS
FILTER
DETECTOR
BLACK BODY
500 K
fo=1200 Hz
∆f=120 Hz
INCIDENT ENERGY: 2.64 µW/cm2
KIRDC0005EA
3
InSb photoconductive detector P6606 series
ꢀ Dimensional outlines (unit: mm)
➀ P6606-110/-210
15.3 0.2
14 0.2
WINDOW
PHOTOSENSITIVE
10 0.2
SURFACE
0.45
LEAD
10.2 0.2
DETECTOR
DETECTOR
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
P6606-110 P6606-210
4.2 0.2 6.6 0.2
5.1 0.2
a
10.2 0.2
KIRDA0126EA
➁ P6606-305/-310/-320
39
30.1 0.1
4
19.4 0.2
WINDOW
10 0.2
PHOTOSENSITIVE
SURFACE
1.0
LEAD
PUMP-OUT PIPE
5 MAX.
12.7 0.2
TE-COOLER (+)
DETECTOR
THERMISTOR
PUMP-OUT PIPE
NC
TE-COOLER (-)
KIRDA0127EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat.No.KIRD1026E04
Sep. 2002DN
4
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