R4332 [HAMAMATSU]
PHOTOMULTlPLlER TUBES; PHOTOMULTlPLlER钢管
| 型号： | R4332 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | PHOTOMULTlPLlER TUBES |
| 文件： | 总4页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PHOTOMULTlPLlER TUBES
R3788, R4332
High Sensitivity, Bialkali Photocathode
28mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type
FEATURES
Spectral Response
R3788 .................................................... 185 to 750 nm
R4332 ..................................................... 160 to 750 nm
High Cathode Sensitivity
Luminous ........................................... 120 A/lm Typ.
Radiant at 420nm .................................. 90mA/W Typ.
Quantum Efficiency at 210nm ......... 40% Typ. (R4332)
High Anode Sensitivity (at 1000V)
Luminous ............................................... 1200A/lm Typ.
Radiant at 420nm ............................ 9.0 105 A/W Typ.
APPLICATIONS
Fluorescence Spectrophotometers
Emission Spectrophotometers
Atomic Absorption Spectrophotometers
GENERAL
Figure 1: Typical Spectral Response
Parameter
Description
Unit
TPMSB0081EA
Spectral Response
100
CATHODE RADIANT
SENSITIVITY
R3788
R4332
185 to 750
160 to 750
nm
nm
R4332
Wavelength of Maximum Response
420
nm
QUANTUM
EFFICIENCY
Photocathode
MateriaI
10
Bialkali
Minimum Effective Area
8
24
mm
Window Material
R3788
R3788
UV glass
1
R4332
Fused silica
Dynode
Bialkali
Circular-cage
9
Secondary Emitting Surface
Structure
Number of Stages
0.1
0.01
Direct Interelectrode Capacitances
Anode to Last Dynode
Anode to All Other Electrodes
4
6
pF
pF
11-pin base
JEDEC No. B11-88
Base
100
200
300
400
500
600
700
800
Weight
45
g
WAVELENGTH (nm)
E678–11A (option)
E717–21(option)
SuitabIe Socket
SuitabIe Socket Assembly
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. © 1994 Hamamatsu Photonics K.K.
PHOTOMULTlPLlER TUBES R3788, R4332
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Value
Unit
Supply Voltage
Between Anode and Cathode
Between Anode and Last Dynode
Average Anode Current A
1250
250
Vdc
Vdc
0.1
mA
CHARACTERISTlCS (at 25 )
R3788
Typ.
R4332
Typ.
Parameter
Unit
Min.
Max.
Min.
Max.
Cathode Sensitivity
Quantum Efficiency at Peak Wavelength
30
(at 250nm)
120
40
(at 210nm)
120
%
100
100
A/lm
Luminous B
Radiant at 194nm
210nm
31
50
90
60
68
90
mA/W
mA/W
mA/W
420nm
Red/White Ratio C
Blue D
0.01
10
0.01
10
A/lm-b
Anode Sensitivity
Luminous E
Radiant at 194nm
210nm
500
1200
500
1200
A/lm
A/W
A/W
A/W
3.1 105
5.0 105
9.0 105
6.0 105
6.8 105
9.0 105
420nm
Gain E
1.0 107
5
1.0 107
5
Anode Dark Current F
50
50
nA
W
(After 30minutes Storage in the darkness)
ENI(Equivalent Noise Input) G
1.4 10-16
1.4 10-16
Time Response E
Anode Pulse Rise Time H
Electron Transit Time I
Transit Time Spread (TTS) J
2.2
22
1.2
2.2
22
1.2
ns
ns
ns
Anode Current Stability K
Light Hysteresis
Voltage Hysteresis
0.1
1.0
0.1
1.0
%
%
NOTES
A:Averaged over any interval of 30 seconds maximum.
F: Measured with the same supply voltage and voltage distribution ratio as
Note E after removal of light.
G:ENI is an indication of the photon-limited signal-to-noise ratio. It refers to
the amount of light in watts to produce a signal-to-noise ratio of unity in the
output of a photomultiplier tube.
B:The light source is a tungsten filament lamp operated at a distribution tem-
perature of 2856K. Supply voltage is 100 volts between the cathode and
all other electrodes connected together as anode.
C:Red/White ratio is the quotient of the cathode current measured using a
red filter(Toshiba R-68) interposed between the light source and the tube
by the cathode current measured with the filter removed under the same
conditions as Note B.
.
. .
f
ENI =
2q ldb G
S
D:The value is cathode output current when a blue filter(Corning CS-5-58
polished to 1/2 stock thickness) is interposed between the light source and
the tube under the same condition as Note B.
where q = Electronic charge (1.60 10-19 coulomb).
ldb = Anode dark current(after 30 minutes storage) in amperes.
G = Gain.
E:Measured with the same light source as Note B and with the voltage distri-
bution ratio shown in Table 1 below.
f = Bandwidth of the system in hertz. 1 hertz is used.
S = Anode radiant sensitivity in amperes per watt at the wave-
length of peak response.
Table 1:Voltage Distribution Ratio
H:The rise time is the time for the output pulse to rise from 10% to 90% of the
peak amplitude when the entire photocathode is illuminated by a delta
function light pulse.
Electrodes
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9
P
Distribution
Ratio
1
1
1
1
1
1
1
1
1
1
SuppIy Voltage : 1000Vdc
K : Cathode, Dy : Dynode, P : Anode
I: The electron transit time is the interval between the arrival of delta function
light pulse at the entrance window of the tube and the time when the anode
output reaches the peak amplitude. In measurement, the whole photo-
cathode is illuminated.
l
l
min.
max
Hysteresis =
100(%)
l
i
(1)Current Hysteresis
J: Also called transit time jitter. This is the fluctuation in electron transit time
between individual pulses in the signal photoelectron mode, and may be
defined as the FWHM of the frequency distribution of electron transit times.
The tube is operated at 750 volts with an anode current of 1 micro-ampere for
5 minutes. The light is then removed from the tube for a minute. The tube is
then re-illuminated by the previous light level for a minute to measure the
variation.
K:Hysteresis is temporary instability in anode current after light and voltage
are applied.
(2)Voltage Hysteresis
The tube is operated at 300 volts with an anode current of 0.1 micro-ampere
for 5 minutes. The light is then removed from the tube and the supply voltage
is quickly increased to 800 volts. After a minute, the supply voltage is then
reduced to the previous value and the tube is re-illuminated for a minute to
measure the variation.
l
max.
l
i
l
min.
TIME
0
5
6
7 (minutes)
TPMSB0002EA
Figure 2: Anode Luminous Sensitivity and
Gain Characteristics
Figure 3: Typical Time Response
TPMSB0004EB
TPMSB0032EB
105
104
103
102
101
100
10–1
108
100
80
60
GAIN(TYP.)
107
106
105
104
103
102
40
20
10
8
ANOD LUMINOUS
SENSITIVITY (TYP.)
6
4
ANODE LUMINOUS
SENSITIVITY (MIN.)
2
1
500
600
700 800
1000
1200
1500
300
500
700
1000
1500
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Figure 4: Typical ENI with Wavelength
Figure 5: Typical EADCI (Equivalent Anode Dark Current Input)
vs. Supply Voltage
TPMSB0082EA
TPMSB0034EA
10-12
10–9
10–10
10-13
R4332
10–11
10-14
R3788
10–12
10-15
10-16
10–13
300
100
200
300
400
500
600
700
800
400
500 600
800
1000
SUPPLY VOLTAGE (V)
1500
WAVELENGTH (nm)
PHOTOMULTlPLlER TUBES R3788, R4332
Unit : mm
Figure 6: Dimensional Outline and Basing Diagram
Figure 7: Socket E678-11A (Option)
49
38
28.5 1.5
8MIN.
T9 BULB
DY6
6
DY5
PHOTOCATHODE
DY7
5
7
DY4
4
DY8
8
3
DY3
DY2
9 DY9
5
2
10
P
1
11
DY1
K
DIRECTION
OF LIGHT
29
BOTTOM VIEW
(BASING DIAGRAM)
32.2 0.5
11 PIN BASE
JEDEC No.B11-88
TACCA0008EB
TPMSA0005EB
Figure 8: D Type Socket Assembly E717-21 (Option)
5
SOCKET
PIN No.
PMT
P
SIGNAL GND
SIGNAL OUTPUT RG-174/U
(BLACK)
10
POWER SUPPLY GND
AWG22 (BLACK)
R10
R9
R8
R7
R6
R5
R4
R3
R2
R1
C3
C2
C1
DY9
DY8
DY7
DY6
DY5
DY4
DY3
DY2
9
8
38.0 0.3
49.0 0.3
7
6
5
29
4
3
31.0 0.5
2
HOUSING
(INSULATOR)
DY1
K
1
POTTING
COMPOUND
–HV
AWG22 (VIOLET)
11
R to R10
C1 to C3
: 330k
: 0.01
F
TACCA0002ED
Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 se-
ries DP type socket assemblies which incorporate a DC to DC converter type
high voltage power supply.
Warning–Personal Safety Hazards
Electrical Shock–Operating voltages applied to this
device present a shock hazard.
HAMAMATSU PHOTONICS K.K., Electoron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384
North Europe: Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95
TPMS1021E01
FEB. 1994
Italy: Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741
相关型号：
R4335050J00
CAPACITOR, TANTALUM, SOLID, POLARIZED, 50V, 3.3uF, THROUGH HOLE MOUNT, RADIAL LEADED
VISHAY
R4335050K00
CAPACITOR, TANTALUM, SOLID, POLARIZED, 50V, 3.3uF, THROUGH HOLE MOUNT, RADIAL LEADED
VISHAY
R4335050M00
CAPACITOR, TANTALUM, SOLID, POLARIZED, 50V, 3.3uF, THROUGH HOLE MOUNT, RADIAL LEADED
VISHAY
©2020 ICPDF网 联系我们和版权申明