R7154_15 [HAMAMATSU]

PHOTOMULTIPLIER TUBE;
R7154_15
型号: R7154_15
厂家: HAMAMATSU CORPORATION    HAMAMATSU CORPORATION
描述:

PHOTOMULTIPLIER TUBE

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中文:  中文翻译
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PHOTOMULTIPLIER TUBE  
R7154  
High Sensitivity Solar Blind Photocathode (160 nm to 320 nm)  
28 mm (1-1/8 Inch) Diameter, 9-stage, Side-on Type  
FEATURES  
GSpectral Response .................................. 160 nm to 320 nm  
GCathode Sensitivity  
Radiant at 254 nm ..................................... 62 mA/W Typ.  
Quantum Efficiency at 254 nm ........................ 30 % Typ.  
GAnode Sensitivity (at 1000 V)  
Radiant at 254 nm ............................ 6.2 × 105 A/W Typ.  
APPLICATIONS  
GEmission Spectroscopy  
GUV Spectrophotometers  
SPECIFICATIONS  
Figure 1: Typical Spectral Response  
GENERAL  
TPMSB0128EA  
Parameter  
Spectral Response*  
Wavelength of Maximum Response  
Description/Value  
Unit  
nm  
nm  
mm  
100  
160 to 320  
230  
Cs-Te  
8 × 24  
Quartz  
CATHODE RADIANT  
SENSITIVITY  
MateriaI  
Minimum Effective Area  
Photocathode  
10  
Window Material  
Secondary Emitting Surface  
Sb-Cs  
Dynode  
Structure  
Circular-cage  
Number of Stages  
9
Direct Interelectrode Anode to Last Dynode  
4
6
pF  
pF  
1
Capacitances  
Base  
Anode to All Other Electrodes  
11-pin base JEDEC No. B11-88  
Approx. 45  
QUANTUM  
Weight  
g
EFFICIENCY  
Operating Ambient Temperature  
Storage Temperature  
SuitabIe Socket  
-30 to +50  
-30 to +50  
E678–11A (Sold Separately)  
E717–63 (Sold Separately)  
E717–74 (Sold Separately)  
°C  
°C  
0.1  
SuitabIe Socket Assembly  
0.01  
* Operate in a nitrogen-purged environment for VUV detection.  
100  
200  
300  
400  
500  
WAVELENGTH (nm)  
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are  
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2010 Hamamatsu Photonics K.K.  
PHOTOMULTIPLIER TUBES R7154  
MAXIMUM RATINGS (Absolute Maximum Values)  
Parameter  
Value  
1250  
250  
Unit  
V
V
Between Anode and Cathode  
Between Anode and Last Dynode  
Supply Voltage  
Average Anode Current A  
0.1  
mA  
CHARACTERISTlCS (at 25 °C)  
Parameter  
Min.  
1.0 × 105  
Typ.  
30  
62  
Max.  
10  
Unit  
%
mA/W  
A/W  
nA  
W
ns  
ns  
ns  
%
%
Quantum Efficiency at 254 nm  
Radiant  
Radiant  
Cathode Sensitivity  
at 254 nm  
at 254 nm  
Anode Sensitivity  
Gain  
6.2 × 105  
1.0 × 107  
1
9.1 × 10-17  
2.2  
Anode Dark Current F (After 30 min Storage in Darkness)  
ENI (Equivalent Noise Input) G  
Anode Pulse Rise Time H  
Time Response E  
Electron Transit Time I  
Transit Time Spread (TTS) J  
Light Hysteresis  
22  
1.2  
0.1  
1.0  
Anode Current Stability K  
Voltage Hysteresis  
NOTES  
A:Averaged over any interval of 30 seconds maximum.  
H:The rise time is the time for the output pulse to rise from 10 % to 90 % of the  
peak amplitude when the entire photocathode is illuminated by a delta  
function light pulse.  
I: The electron transit time is the interval between the arrival of delta function  
light pulse at the entrance window of the tube and the time when the anode  
output reaches the peak amplitude. In measurement, the whole photocathode  
is illuminated.  
J: Also called transit time jitter. This is the fluctuation in electron transit time  
between individual pulses in the signal photoelectron mode, and may be  
defined as the FWHM of the frequency distribution of electron transit times.  
K:Hysteresis is temporary instability in anode current after light and voltage are  
applied.  
B:The light source is a tungsten filament lamp operated at a distribution  
temperature of 2856K. Supply voltage is 100 V between the cathode  
and all other electrodes connected together as anode.  
C:Red/White ratio is the quotient of the cathode current measured using  
a red filter (Toshiba R-68) interposed between the light source and the  
tube by the cathode current measured with the filter removed under the  
same conditions as Note B.  
D:The value is cathode output current when a blue filter (Corning CS 5-58  
polished to 1/2 stock thickness) is interposed between the light source  
and the tube under the same condition as Note B.  
E:Measured with the same light source as Note B and with the voltage  
distribution ratio shown in Table 1 below.  
l
Table 1: Voltage Distribution Ratio  
max.  
l
i
l
min.  
TIME  
Electrode  
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9  
P
0
5
6
7 (minutes)  
TPMSB0002EA  
Distribution  
Ratio  
1
1
1
1
1
1
1
1
1
1
l
l
min.  
max.  
Hysteresis =  
× 100 (%)  
l
SuppIy Voltage: 1000 V, K: Cathode, Dy: Dynode, P: Anode  
i
F: Measured with the same supply voltage and voltage distribution ratio as  
Note E after removal of light.  
G:ENI is an indication of the photon-limited signal-to-noise ratio. It refers to  
the amount of light in watts to produce a signal-to-noise ratio of unity in  
the output of a photomultiplier tube.  
(1) Light Hysteresis  
The tube is operated at 750 V with an anode current of 1 µA for 5 minutes.  
The light is then removed from the tube for a minute. The tube is then  
re-illuminated by the previous light level for a minute to measure the variation.  
.
. .  
2q ldb G f  
(2) Voltage Hysteresis  
ENI =  
S
The tube is operated at 300 V with an anode current of 0.1 µA for 5 minutes.  
The light is then removed from the tube and the supply voltage is quickly  
increased to 800 V. After a minute, the supply voltage is then reduced to the  
previous value and the tube is re-illuminated for a minute to measure the  
variation.  
where q = Electronic charge (1.60 × 10-19 coulomb).  
ldb = Anode dark current (after 30 minute storage) in amperes.  
G = Gain.  
f = Bandwidth of the system in hertz. 1 hertz is used.  
S = Anode radiant sensitivity in amperes per watt at the wave-  
length of peak response.  
Figure 2: Anode Radiant Sensitivity and Gain  
Characteristcs  
Figure 3: Typical Time Response  
TPMSB0129EB  
TPMSB0004EC  
108  
108  
107  
106  
105  
104  
103  
102  
100  
80  
60  
TYPICAL GAIN  
107  
40  
106  
105  
20  
10  
8
TYPICAL ANODE  
SENSITIVITY  
6
4
104  
MINIMUM ANODE  
SENSITIVITY  
103  
2
1
102  
500  
700  
1000  
500  
700  
1000  
1500  
1500  
SUPPLY VOLTAGE (V)  
SUPPLY VOLTAGE (V)  
PHOTOMULTIPLIER TUBES R7154  
Figure 4: Dimensional Outline and Basing Diagram (Unit: mm)  
Figure 5: Socket (Unit: mm) Sold Separately  
E678-11A  
28.5 1.5  
49  
38  
8 MIN.  
T9 BULB  
DY6  
6
PHOTOCATHODE  
DY7  
DY5  
5
1
7
DY4  
DY8  
4
8
5
3
DY3  
9 DY9  
2
10  
P
DY2  
29  
11  
K
DY1  
DIRECTION OF LIGHT  
Bottom View  
(Basing Diagram)  
32.2 0.5  
11 PIN BASE  
JEDEC No.B11-88  
TACCA0064EA  
TPMSA0005EB  
Figure 6: D Type Socket Assembly (Unit: mm) Sold Separately  
E717-63  
E717-74  
HOUSING  
(INSULATOR)  
SOCKET  
SOCKET  
5
PMT  
PMT  
P
PIN No.  
PIN No.  
SIGNAL GND  
SIGNAL OUTPUT  
RG-174/U(BLACK)  
SIGNAL  
OUTPUT (A)  
10  
10  
P
GND (G)  
POWER SUPPLY GND  
AWG22 (BLACK)  
R10  
R9  
R8  
R7  
R6  
R5  
R4  
R3  
R2  
R1  
C3  
C2  
C1  
R10  
R9  
R8  
R7  
R6  
R5  
R4  
R3  
R2  
R1  
C3  
C2  
C1  
DY9  
DY8  
DY7  
DY6  
DY5  
DY4  
DY3  
DY2  
DY1  
9
8
DY9  
DY8  
DY7  
DY6  
DY5  
DY4  
DY3  
DY2  
9
8
38.0 0.3  
49.0 0.3  
26.0 0.2  
32.0 0.5  
7
7
TOP VIEW  
29.0 0.3  
6
6
R1 to R10 : 330 k  
C1 to C3 : 10 nF  
R1 to R10 : 330 k  
C1 to C3 : 10 nF  
5
5
A
4
4
K
G
31.0 0.5  
22.4 0.2  
3
HOUSING  
3
SIDE VIEW  
(INSULATOR)  
2
2
POTTING  
COMPOUND  
0.7  
1
DY1  
K
1
K
-HV (K)  
11  
-HV  
11  
AWG22 (VIOLET)  
4- 2.8  
R13  
* "Wiring diagram applies when -HV is supplied."  
To supply +HV,connect the pin "G" to+HV, and the pin  
"K" to the GND.  
BOTTOM VIEW  
TACCA0002EH  
TACCA0277EA  
* Hamamatsu also provides C4900 series compact high voltage power  
supplies and C6270 series DP type socket assemblies which incor-  
porate a DC to DC converter type high voltage power supply.  
Warning–Personal Safety Hazards  
Electrical ShockOperating voltages applied to this  
device present a shock hazard.  
www.hamamatsu.com  
HAMAMATSU PHOTONICS K.K.  
HAMAMATSU PHOTONICS K.K., Electron Tube Division  
314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205  
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com  
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de  
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr  
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk  
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se  
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it  
TPMS1036E03  
DEC. 2010. IP  

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