R7154_15 [HAMAMATSU]
PHOTOMULTIPLIER TUBE;型号: | R7154_15 |
厂家: | HAMAMATSU CORPORATION |
描述: | PHOTOMULTIPLIER TUBE |
文件: | 总4页 (文件大小:213K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PHOTOMULTIPLIER TUBE
R7154
High Sensitivity Solar Blind Photocathode (160 nm to 320 nm)
28 mm (1-1/8 Inch) Diameter, 9-stage, Side-on Type
FEATURES
GSpectral Response .................................. 160 nm to 320 nm
GCathode Sensitivity
Radiant at 254 nm ..................................... 62 mA/W Typ.
Quantum Efficiency at 254 nm ........................ 30 % Typ.
GAnode Sensitivity (at 1000 V)
Radiant at 254 nm ............................ 6.2 × 105 A/W Typ.
APPLICATIONS
GEmission Spectroscopy
GUV Spectrophotometers
SPECIFICATIONS
Figure 1: Typical Spectral Response
GENERAL
TPMSB0128EA
Parameter
Spectral Response*
Wavelength of Maximum Response
Description/Value
Unit
nm
nm
—
mm
—
100
160 to 320
230
Cs-Te
8 × 24
Quartz
CATHODE RADIANT
SENSITIVITY
MateriaI
Minimum Effective Area
Photocathode
10
Window Material
Secondary Emitting Surface
Sb-Cs
—
Dynode
Structure
Circular-cage
—
Number of Stages
9
—
Direct Interelectrode Anode to Last Dynode
4
6
pF
pF
—
1
Capacitances
Base
Anode to All Other Electrodes
11-pin base JEDEC No. B11-88
Approx. 45
QUANTUM
Weight
g
EFFICIENCY
Operating Ambient Temperature
Storage Temperature
SuitabIe Socket
-30 to +50
-30 to +50
E678–11A (Sold Separately)
E717–63 (Sold Separately)
E717–74 (Sold Separately)
°C
°C
—
0.1
SuitabIe Socket Assembly
—
0.01
* Operate in a nitrogen-purged environment for VUV detection.
100
200
300
400
500
WAVELENGTH (nm)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2010 Hamamatsu Photonics K.K.
PHOTOMULTIPLIER TUBES R7154
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Value
1250
250
Unit
V
V
Between Anode and Cathode
Between Anode and Last Dynode
Supply Voltage
Average Anode Current A
0.1
mA
CHARACTERISTlCS (at 25 °C)
Parameter
Min.
—
—
1.0 × 105
Typ.
30
62
Max.
—
—
—
—
10
—
—
—
—
Unit
%
mA/W
A/W
—
nA
W
ns
ns
ns
%
%
Quantum Efficiency at 254 nm
Radiant
Radiant
Cathode Sensitivity
at 254 nm
at 254 nm
Anode Sensitivity
Gain
6.2 × 105
1.0 × 107
1
9.1 × 10-17
2.2
—
—
—
—
—
—
—
—
Anode Dark Current F (After 30 min Storage in Darkness)
ENI (Equivalent Noise Input) G
Anode Pulse Rise Time H
Time Response E
Electron Transit Time I
Transit Time Spread (TTS) J
Light Hysteresis
22
1.2
0.1
1.0
—
—
Anode Current Stability K
Voltage Hysteresis
NOTES
A:Averaged over any interval of 30 seconds maximum.
H:The rise time is the time for the output pulse to rise from 10 % to 90 % of the
peak amplitude when the entire photocathode is illuminated by a delta
function light pulse.
I: The electron transit time is the interval between the arrival of delta function
light pulse at the entrance window of the tube and the time when the anode
output reaches the peak amplitude. In measurement, the whole photocathode
is illuminated.
J: Also called transit time jitter. This is the fluctuation in electron transit time
between individual pulses in the signal photoelectron mode, and may be
defined as the FWHM of the frequency distribution of electron transit times.
K:Hysteresis is temporary instability in anode current after light and voltage are
applied.
B:The light source is a tungsten filament lamp operated at a distribution
temperature of 2856K. Supply voltage is 100 V between the cathode
and all other electrodes connected together as anode.
C:Red/White ratio is the quotient of the cathode current measured using
a red filter (Toshiba R-68) interposed between the light source and the
tube by the cathode current measured with the filter removed under the
same conditions as Note B.
D:The value is cathode output current when a blue filter (Corning CS 5-58
polished to 1/2 stock thickness) is interposed between the light source
and the tube under the same condition as Note B.
E:Measured with the same light source as Note B and with the voltage
distribution ratio shown in Table 1 below.
l
Table 1: Voltage Distribution Ratio
max.
l
i
l
min.
TIME
Electrode
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9
P
0
5
6
7 (minutes)
TPMSB0002EA
Distribution
Ratio
1
1
1
1
1
1
1
1
1
1
l
l
min.
max.
Hysteresis =
× 100 (%)
l
SuppIy Voltage: 1000 V, K: Cathode, Dy: Dynode, P: Anode
i
F: Measured with the same supply voltage and voltage distribution ratio as
Note E after removal of light.
G:ENI is an indication of the photon-limited signal-to-noise ratio. It refers to
the amount of light in watts to produce a signal-to-noise ratio of unity in
the output of a photomultiplier tube.
(1) Light Hysteresis
The tube is operated at 750 V with an anode current of 1 µA for 5 minutes.
The light is then removed from the tube for a minute. The tube is then
re-illuminated by the previous light level for a minute to measure the variation.
.
. .
2q ldb G ∆f
(2) Voltage Hysteresis
ENI =
S
The tube is operated at 300 V with an anode current of 0.1 µA for 5 minutes.
The light is then removed from the tube and the supply voltage is quickly
increased to 800 V. After a minute, the supply voltage is then reduced to the
previous value and the tube is re-illuminated for a minute to measure the
variation.
where q = Electronic charge (1.60 × 10-19 coulomb).
ldb = Anode dark current (after 30 minute storage) in amperes.
G = Gain.
∆f = Bandwidth of the system in hertz. 1 hertz is used.
S = Anode radiant sensitivity in amperes per watt at the wave-
length of peak response.
Figure 2: Anode Radiant Sensitivity and Gain
Characteristcs
Figure 3: Typical Time Response
TPMSB0129EB
TPMSB0004EC
108
108
107
106
105
104
103
102
100
80
60
TYPICAL GAIN
107
40
106
105
20
10
8
TYPICAL ANODE
SENSITIVITY
6
4
104
MINIMUM ANODE
SENSITIVITY
103
2
1
102
500
700
1000
500
700
1000
1500
1500
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
PHOTOMULTIPLIER TUBES R7154
Figure 4: Dimensional Outline and Basing Diagram (Unit: mm)
Figure 5: Socket (Unit: mm) Sold Separately
E678-11A
28.5 1.5
49
38
8 MIN.
T9 BULB
DY6
6
PHOTOCATHODE
DY7
DY5
5
1
7
DY4
DY8
4
8
5
3
DY3
9 DY9
2
10
P
DY2
29
11
K
DY1
DIRECTION OF LIGHT
Bottom View
(Basing Diagram)
32.2 0.5
11 PIN BASE
JEDEC No.B11-88
TACCA0064EA
TPMSA0005EB
Figure 6: D Type Socket Assembly (Unit: mm) Sold Separately
E717-63
E717-74
HOUSING
(INSULATOR)
SOCKET
SOCKET
5
PMT
PMT
P
PIN No.
PIN No.
SIGNAL GND
SIGNAL OUTPUT
RG-174/U(BLACK)
SIGNAL
OUTPUT (A)
10
10
P
GND (G)
POWER SUPPLY GND
AWG22 (BLACK)
R10
R9
R8
R7
R6
R5
R4
R3
R2
R1
C3
C2
C1
R10
R9
R8
R7
R6
R5
R4
R3
R2
R1
C3
C2
C1
DY9
DY8
DY7
DY6
DY5
DY4
DY3
DY2
DY1
9
8
DY9
DY8
DY7
DY6
DY5
DY4
DY3
DY2
9
8
38.0 0.3
49.0 0.3
26.0 0.2
32.0 0.5
7
7
TOP VIEW
29.0 0.3
6
6
R1 to R10 : 330 kΩ
C1 to C3 : 10 nF
R1 to R10 : 330 kΩ
C1 to C3 : 10 nF
5
5
A
4
4
K
G
31.0 0.5
22.4 0.2
3
HOUSING
3
SIDE VIEW
(INSULATOR)
2
2
POTTING
COMPOUND
0.7
1
DY1
K
1
K
-HV (K)
11
-HV
11
AWG22 (VIOLET)
4- 2.8
R13
* "Wiring diagram applies when -HV is supplied."
To supply +HV,connect the pin "G" to+HV, and the pin
"K" to the GND.
BOTTOM VIEW
TACCA0002EH
TACCA0277EA
* Hamamatsu also provides C4900 series compact high voltage power
supplies and C6270 series DP type socket assemblies which incor-
porate a DC to DC converter type high voltage power supply.
Warning–Personal Safety Hazards
Electrical Shock–Operating voltages applied to this
device present a shock hazard.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K.
HAMAMATSU PHOTONICS K.K., Electron Tube Division
314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it
TPMS1036E03
DEC. 2010. IP
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