R7447P [HAMAMATSU]
PHOTOMULTlPLlER TUBES; PHOTOMULTlPLlER钢管
| 型号： | R7447P |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | PHOTOMULTlPLlER TUBES |
| 文件： | 总4页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PHOTOMULTlPLlER TUBES
R7447
R7447P (For Photon Counting)
Very High Cathode Sensitivity with Low Noise Photocathode
FEATURES
Spectral Response ..................................... 160 to 710 nm
High Cathode Sensitivity
Luminous ......................................................100 A/lm
Radiant at 410nm ............................................ 70 mA/W
High Anode Sensitivity (at 1000V)
Luminous ....................................................... 1200A/lm
Radiant at 410nm .....................................8.4 105 A/W
Low Dark Current .................................................... 0.2nA
Low Dark Counts (R7447P) .................................... 10 cps
APPLICATIONS
Environmental Monitoring
Atomic Emission Spectrometer
Atomic Absorption Spectrometer
Figure 1: Typical Spectral Response
GENERAL
TPMSB0196EA
Parameter
Description/Value Unit
100
Spectral Response
160 to 710
410
nm
nm
Wavelength of Maximum Response
Photocathode
MateriaI
Low noise bialkali
10
Minimum Effective Area
8 × 24
mm
CATHODE
RADIANT
SENCITIVITY
Window Material
Fused Silica
Dynode
Low noise bialkali
Circular-cage
9
Secondary Emitting Surface
Structure
Number of Stages
1
QUANTUM
EFFICIENCY
Direct Interelectrode Capacitances
Anode to Last Dynode
4
6
pF
pF
Anode to All Other Electrodes
11-pin base
JEDEC No. B11-88
0.1
Base
Weight
45
g
E678–11A (option)
E717–63 (option)
SuitabIe Socket
SuitabIe Socket Assembly
0.01
100
200
300
400
500
600
700
800
WAVELENGTH (nm)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©1999 Hamamatsu Photonics K.K
PHOTOMULTlPLlER TUBES R7447, R7447P (For Photon Counting)
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Value
Unit
Supply Voltage
Between Anode and Cathode
Between Anode and Last Dynode
Average Anode Current A
1250
250
0.1
Vdc
Vdc
mA
R7447
for General Purpose
R7447P
for Photon Counting
CHARACTERISTlCS (at 25 °C)
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Cathode Sensitivity
Quantum Efficiency at 300nm
Luminous B
Radiant at 410nm (Peak)
BlueC
24
24
%
80
100
70
8
80
100
70
8
µA/lm
mA/W
µA/lm-b
Anode Sensitivity
Luminous D
Radiant at 400nm
1000
1200
8.4 × 105
1000
1200
8.4 × 105
A/lm
A/W
Gain E
1.2 × 107
1.2 × 107
Anode Dark Current F
After 30minutes Storage in the darkness
Anode Dark CountsF
0.2
2.0
0.2
10
0.5
50
nA
cps
ENI(Equivalent Noise Input) G
3.30 × 10-17
3.30 × 10-17
W
Time Response D
Anode Pulse Rise Time H
Electron Transit Time J
Transit Time Spread (TTS) K
2.2
22
1.2
2.2
22
1.2
ns
ns
ns
Anode Current Stability L
Current Hysteresis
Voltage Hysteresis
0.1
1.0
0.1
1.0
%
%
NOTES
K:Also called transit time jitter. This is the fluctuation in electron transit time
between individual pulses in the signal photoelectron mode, and may be
defined as the FWHM of the frequency distribution of electron transit times.
A:Averaged over any interval of 30 seconds maximum.
B:The light source is a tungsten filament lamp operated at a distribution tem-
perature of 2856K. Supply voltage is 150 volts between the cathode and all
other electrodes connected together as anode.
L:
Hysteresis is temporary instability in anode current after light and voltage
are applied.
C:The value is cathode output current when a blue filter(Corning CS-5-58
polished to 1/2 stock thickness) is interposed between the light source and
the tube under the same condition as Note B.
D:Measured with the same light source as Note B and with the anode-to-
cathode supply voltage and voltage distribution ratio shown in Table 1 be-
low.
l
l
min.
max.
Hysteresis =
× 100(%)
l
i
l
max.
l
i
l
min.
E:Measured with the same supply voltage and voltage distribution ratio as
Note D after removal of light.
TIME
0
5
6
7 (minutes)
F: Measured at the voltage producing the gain of 1 × 106.
G:ENI is an indication of the photon-limited signal-to-noise ratio. It refers to
the amount of light in watts to produce a signal-to-noise ratio of unity in the
output of a photomultiplier tube.
TPMSB0002EA
(1)Current Hysteresis
The tube is operated at 750 volts with an anode current of 1 micro-ampere for
5 minutes. The light is then removed from the tube for a minute. The tube is
then re-illuminated by the previous light level for a minute to measure the
variation.
.
. .
2q ldb G f
S
ENI =
where q = Electronic charge (1.60 × 10-19 coulomb).
ldb = Anode dark current(after 30 minute storage) in amperes.
G = Gain.
(2)Voltage Hysteresis
The tube is operated at 300 volts with an anode current of 0.1 micro-ampere
for 5 minutes. The light is then removed from the tube and the supply voltage
is quickly increased to 800 volts. After a minute, the supply voltage is then
reduced to the previous value and the tube is re-illuminated for a minute to
measure the variation.
f = Bandwidth of the system in hertz. 1 hertz is used.
S = Anode radiant sensitivity in amperes per watt at the wave-
length of peak response.
Table 1:Voltage Distribution Ratio
H:The rise time is the time for the output pulse to rise from 10% to 90% of the
peak amplitude when the entire photocathode is illuminated by a delta
function light pulse.
Electrodes
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9
P
J: The electron transit time is the interval between the arrival of delta function
light pulse at the entrance window of the tube and the time when the anode
output reaches the peak amplitude. In measurement, the whole photo-
cathode is illuminated.
Distribution
Ratio
1
1
1
1
1
1
1
1
1
1
SuppIy Voltage : 1000Vdc
K : Cathode, Dy : Dynode, P : Anode
Figure 2: Typical Gain and Anode Dark Current
Figure 3: Typical Time Response
TPMSB0011EA
TPMSB0004EB
10–5
108
107
106
100
80
60
10–6
10–7
10–8
10–9
10–10
40
20
105
104
103
10
8
6
4
2
1
102
101
10–11
10–12
300
400
500 600
800 1000
1500
300
500
700
1000
1500
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Figure 4: Typical ENI vs. Wavelength
Figure 5: Typical EADCI (Equivalent Anode Dark
Current Input) vs. Supply Voltage
TPMSB0013EA
TPMSB0197EA
10-13
10-10
10-14
10-15
10-16
10-17
10-11
10-12
10-13
10-14
100
200
300
400
500
600
700
800
300
400
500 600
800 1000
1500
WAVELENGTH (nm)
SUPPLY VOLTAGE (V)
Data shown here, which is given from a relation among supply voltage,
anode sensitivity and dark current, serves as a good reference in order
to determine the most suitable supply voltage or its range.
Figure 6: Typical Single Photon Pulse Height
Distribution for R7447P
Figure 7: Typical Temperature Characteristics
of Dark Count for R7447P
TPMSB0198EA
TPMSB0015EA
104
1.0
WAVELENGTH OF INCIDENT LIGHT: 450 (nm)
SUPPLY VOLTAGE
: 740 (V) (which is producing 106
Current Amplification)
: 66 (ch)
0.8
103
102
101
LOWER LEVEL DISCRI.
PHOTON+DARK COUNT : 5710 (cps)
DARK COUNT
: 10 (cps)
AMBLENT TEMPERATURE: 25 (°C)
0.6
0.4
SIGNAL+DARK
0.2
100
DARK
200
10–1
–20
0
400
600
800
1000
0
+20
+40
+60
TEMPERATURE (°C)
CHANNEL NUMBER (CH)
PHOTOMULTlPLlER TUBES R7447, R7447P (For Photon Counting)
Figure 8: Dimensional Outline and Basing Diagram(Unit: mm) Figure 10: Socket E678-11A (Option)
28.5 1.5
8MIN.
49
38
PHOTOCATHODE
DY6
6
DY7
DY5
5
1
7
DY4
DY8
4
8
5
3
DY3
9 DY9
2
10
29
P
DY2
11
K
DY1
DIRECTION OF LIGHT
BOTTOM VIEW
(BASING DIAGRAM)
TACCA0064EA
32.2 0.5
11 PIN BASE
JEDEC No. B11-88
TPMSA0001EA
Figure 9: D Type Socket Assembly E717-63 (Option)
SOCKET
PMT
P
5
PIN No.
SIGNAL GND
SIGNAL OUTPUT
RG-174/U (BLACK)
10
POWER SUPPLY GND
AWG22 (BLACK)
R10
R9
R8
R7
R6
R5
R4
R3
R2
R1
C3
C2
C1
DY9
DY8
DY7
DY6
DY5
DY4
DY3
DY2
9
8
38.0 ± 0.3
49.0 ± 0.3
7
29
6
R to R10: 330 kΩ
C1 to C3: 0.01 µF
5
4
31.0 ± 0.5
3
HOUSING
(INSULATOR)
2
POTTING
COMPOUND
DY1
K
1
-HV
11
AWG22 (VIOLET)
TACCA0002EG
* Hamamatsu also provides C4900 series compact high voltage power
Warning–Personal Safety Hazards
supplies and C6270 series DP type socket assemblies which incorporate a
DC to DC converter type high voltage power supply.
Electrical Shock–Operating voltages applied to this
device present a shock hazard.
HOMEPAGE URL http://www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Electron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: 44(20)8-367-3560, Fax: 44(20)8-367-6384
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01
TPMS1069E01
OCT. 1999
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741
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