R9110_15 [HAMAMATSU]

PHOTOMULTIPLIER TUBES;
R9110_15
型号: R9110_15
厂家: HAMAMATSU CORPORATION    HAMAMATSU CORPORATION
描述:

PHOTOMULTIPLIER TUBES

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PHOTOMULTIPLIER TUBES  
R9110  
R9110P(For Photon Counting)  
High Sensitivity and Lower Dark Current, Lower Dark Count  
Wide Spectral Range with Low ENI  
FEATURES  
G Low Dark Current ...................................... 5 nA (after 30 minutes)  
G Low Dark Counts (R9110P) ...................... 500 s-1  
G Wide Spectral Response .......................... 185 nm to 900 nm  
G High Cathode Sensitivity  
Luminous ................................................ 525 µA/lm  
Radiant at 450 nm .................................. 90 mA/W  
QE at 450 nm .......................................... 24.8 %  
G High Anode Sensitivity (at 1000 V)  
Luminous ................................................ 10 000 A/lm  
G High Signal to Noise Ratio  
The R9110 is 28 mm (1-1/8 inch) diameter, 9-stage, side-on type pho-  
tomultiplier tube having an extended red multialkali photocathode  
same as the R3896. The R9110 features very low dark current, ex-  
tremely high quantum efficiency, high gain, good S/N ratio and wide  
spectral response from UV to near infrared.  
The R9110P is a photon counting version of the R9110 with low dark  
counts.  
GENERAL  
Parameter  
Description / Value  
185 to 900  
450  
Unit  
nm  
nm  
Figure 1: Typical Spectral Response  
and Equivalent Noise Input  
Spectral Response  
Wavelength of Maximum Response  
Photocathode  
TPMSB0207EA  
100  
10-12  
10-13  
10-14  
10-15  
10-16  
10-17  
Material  
Minimum Effective Area  
Window Material  
Multialkali  
8 × 6  
UV glass  
mm  
CATHODE  
RADIANT  
SENSITIVITY  
10  
1
Dynode  
QUANTUM  
EFFICIENCY  
Secondary Emitting Surface  
Structure  
Number of Stages  
Multialkali  
Circular-cage  
9
Direct Interelectrode Capacitances  
Anode to Last Dynode  
Anode to All Other Electrodes  
4
6
pF  
pF  
0.1  
R3896  
11-pin base  
JEDEC No. B11-88  
46  
Base  
Weight  
g
0.01  
0.001  
R9110  
R9110P  
Operating Ambient Temperature  
Storage Temperature  
Suitable Socket  
-30 to +50  
-30 to +50  
E678-11A (Sold Separately)  
E717-63 (Sold Separately)  
E717-74 (Sold Separately)  
°C  
°C  
EQUIVALENT  
NOISE INPUT  
Suitable Socket Assembly  
100 200 300 400 500 600 700 800 900 1000  
WAVELENGTH (nm)  
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are  
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2012 Hamamatsu Photonics K.K.  
PHOTOMULTIPLIER TUBES  
R9110, R9110P (For Photon Counting)  
MAXIMUM RATINGS (Absolute Maximum Values at 25 °C)  
Parameter  
Value  
Unit  
Supply Voltage  
Between Anode and Cathode  
Between Anode and Last Dynode  
Average Anode Current A  
1250  
250  
0.1  
V
V
mA  
CHARACTERISTlCS (at 25 °C)  
Parameter  
Min.  
Typ.  
Max.  
Unit  
Cathode Sensitivity  
Quantum Efficiency  
400  
0.2  
29.3  
24.8  
14.3  
0.73  
525  
60  
90  
73  
5.0  
0.4  
15  
%
%
%
at 254 nm  
at 450 nm  
at 633 nm  
at 852 nm  
%
Luminous B  
Radiant  
µA/lm  
mA/W  
mA/W  
mA/W  
mA/W  
at 254 nm  
at 450 nm  
at 633 nm  
at 852 nm  
Red / White Ratio C  
Blue Sensitivity Index D  
Anode Sensitivity  
Luminous E  
4000  
10 000  
1.9 × 107  
5
500  
1.0 × 10-16  
15  
1000  
A/lm  
nA  
s-1  
Gain E  
Anode Dark Current F (After 30 min Storage in Darkness)  
Anode Dark Counts F (for the R9110P)  
ENI (Equivalent Noise Input) G  
Time Response  
W
Anode Pulse Rise Time H  
Electron Transit Time I  
Transit Time Spread (TTS) J  
Anode Current Stability K  
Light Hysteresis  
2.2  
22  
1.2  
ns  
ns  
ns  
0.1  
1.0  
%
%
Voltage Hysteresis  
NOTES  
A: Averaged over any interval of 30 seconds maximum.  
B: The light source is a tungsten filament lamp operated at a distribution  
temperature of 2856K.  
H: The rise time is the time for the output pulse to rise from 10% to 90% of  
the peak amplitude when the entire photocathode is illuminated by a delta  
function light pulse.  
Supply voltage is 100 volts between the cathode and all other electrodes  
connected together as anode.  
C: Red/White ratio is the quotient of the cathode current measured using a  
red filter (Toshiba R-68) interposed between the light source and the tube  
by the cathode current measured with the filter removed under the same  
conditions as Note B.  
D: The value is cathode output current when a blue filter (Corning CS 5-58  
polished to 1/2 stock thickness) is interposed between the light source  
and the tube under the same condition as Note B.  
E: Measured with the same light source as Note B and with the voltage  
distribution ratio shown in Table 1 below.  
I: The electron transit time is the interval between the arrival of delta  
function light pulse at the entrance window of the tube and the time when  
the anode output reaches the peak amplitube. In measurement, the whole  
photocathode is illuminated.  
J: Also called transit time jitter. This is the fluctuation in electron transit time  
between individual pulses in the single photoelectron mode, and may be  
defined as the FWHM of the frequency distribution of electron transit  
times.  
K: Hysteresis is temporary instability in anode current after light and voltage  
are applied.  
l
l
max.  
min.  
Hysteresis =  
100 (%)  
Table 1:Voltage Distribution Ratio  
l
i
Electrodes  
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9  
P
Distribution  
Ratio  
1
1
1
1
1
1
1
1
1
1
l
max.  
l
i
SuppIy Voltage: 1000 V, K: Cathode, Dy: Dynode, P: Anode  
l
min.  
F: Measured at the voltage producing the gain of 1 × 106 and the voltage  
distribution ratio shown in table 1 below.  
TIME  
0
5
6
7 (minutes)  
TPMSB0002EA  
G: ENI is an indication of the photon-limited signal-to-noise ratio. It refers to  
the amount of light in watts to produce a signal-to-noise ratio of unity in  
the output of a photomultiplier tube.  
(1)Light Hysteresis  
The tube is operated at 750 volts with an anode current of 1 microampere for  
5 minutes. The light is then removed from the tube for a minute. The tube is  
then re-illuminated by the previous light level for a minute to measure the  
variation.  
.
. .  
2q ldb G f  
S
( )  
W
ENI =  
(2)Voltage Hysteresis  
where q = Electronic charge. (1.60 × 10-19 coulomb)  
ldb = Anode dark current (after 30 minute storage) in amperes.  
G = Gain.  
The tube is operated at 300 volts with an anode current of 0.1 micro-ampere  
for 5 minutes. The light is then removed from the tube and the supply voltage  
is quickly increased to 800 volts. After a minute, the supply voltage is then  
reduced to the previous value and the tube is re-illuminated for a minute to  
measure the variation.  
f = Bandwidth of the system in hertz. (usually 1 hertz)  
S = Anode radiant sensitivity in amperes per watt at the  
wavelength of peak response  
Figure 2: Anode Luminous Sensitivity and  
Gain Characteristics  
Figure 3: Typical Time Response  
TPMSB0206EB  
TPMSB0157EB  
105  
108  
107  
106  
105  
104  
103  
102  
100  
80  
60  
TYPICAL GAIN  
104  
40  
103  
20  
TYPICAL ANODE  
SENSITIVITY  
102  
10  
8
MINIMUM ANODE  
SENSITIVITY  
6
4
101  
100  
2
1
10-1  
500  
700  
1000  
1500  
500  
700  
1000  
1500  
SUPPLY VOLTAGE (V)  
SUPPLY VOLTAGE (V)  
Figure 4: Typical Temperature Characteristics  
of Dark Current (R9110)  
Figure 5: Typical Temperature Characteristics  
of Dark Count (R9110P)  
(at 1000 V, after 30 min storage)  
TPMSB0241EA  
TPMSB0240EA  
104  
100  
10  
1
103  
102  
0.1  
101  
0.01  
0.001  
100  
-30  
-30  
-20  
-10  
0
10  
20  
30  
40  
50  
-20  
-10  
0
10  
20  
30  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
PHOTOMULTIPLIER TUBES  
R9110, R9110P (For Photon Counting)  
Figure 5: Dimensional Outline and Basing Diagram (Unit: mm)  
Figure 6: Socket (Unit: mm) Sold Separately  
29.0 1.7  
8 MIN.  
E678-11A  
49  
38  
PHOTOCATHODE  
DY6  
6
DY7  
DY5  
5
1
7
DY4  
DY8  
4
8
3
DY3  
9
DY9  
5
2
10  
P
DY2  
11  
29  
K
DY1  
DIRECTION OF LIGHT  
32.2 0.5  
INSULATION COVER  
11 PIN BASE  
JEDEC No. B11-88  
TACCA0064EA  
TPMSA0016EC  
Figure 7: D Type Socket Assembly (Unit: mm) Sold Separately  
E717-63  
E717-74  
HOUSING  
(INSULATOR)  
SOCKET  
SOCKET  
5
PMT  
P
PMT  
P
PIN No.  
PIN No.  
SIGNAL GND  
SIGNAL OUTPUT  
RG-174/U(BLACK)  
SIGNAL  
OUTPUT (A)  
10  
10  
GND (G)  
POWER SUPPLY GND  
AWG22 (BLACK)  
R10  
R9  
R8  
R7  
R6  
R5  
R4  
R3  
R2  
R1  
C3  
C2  
C1  
R10  
R9  
R8  
R7  
R6  
R5  
R4  
R3  
R2  
R1  
C3  
C2  
C1  
DY9  
9
8
DY9  
DY8  
DY7  
DY6  
DY5  
DY4  
DY3  
DY2  
9
8
38.0 0.3  
49.0 0.3  
26.0 0.2  
32.0 0.5  
DY8  
DY7  
DY6  
DY5  
DY4  
DY3  
DY2  
DY1  
7
7
TOP VIEW  
29.0 0.3  
6
6
R1 to R10 : 330 kΩ  
C1 to C3 : 10 nF  
R1 to R10 : 330 kΩ  
C1 to C3 : 10 nF  
5
5
A
4
4
K
G
31.0 0.5  
22.4 0.2  
3
HOUSING  
3
SIDE VIEW  
(INSULATOR)  
2
2
POTTING  
COMPOUND  
0.7  
1
DY1  
K
1
K
-HV (K)  
11  
-HV  
11  
AWG22 (VIOLET)  
4- 2.8  
R13  
* "Wiring diagram applies when -HV is supplied."  
To supply +HV,connect the pin "G" to+HV, and the pin  
"K" to the GND.  
BOTTOM VIEW  
TACCA0002EH  
TACCA0277EA  
* Hamamatsu also provides C4900 series compact high voltage power  
supplies and C6270 series DP type socket assemblies which incor-  
porate a DC to DC converter type high voltage power supply.  
Warning–Personal Safety Hazards  
Electrical ShockOperating voltages applied to this  
device present a shock hazard.  
www.hamamatsu.com  
HAMAMATSU PHOTONICS K.K.  
HAMAMATSU PHOTONICS K.K., Electron Tube Division  
314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205  
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com  
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de  
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr  
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk  
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se  
TPMS1080E01  
MAR. 2012. IP  
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it  
China: HAMAMATSU PHOTONICS (CHINA) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: hpc@hamamatsu.com.cn  

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