R928_15 [HAMAMATSU]

Extended Red, High Sensitivity, Multialkali Photocathode 28 mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type;


型号：	R928_15
厂家：	HAMAMATSU CORPORATION
描述：	Extended Red, High Sensitivity, Multialkali Photocathode 28 mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type
文件：	总4页 (文件大小：183K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

R^PH9^OT2^O8^M,^UR^LTI9^PL5^IE5^{R TUBES}

Extended Red, High Sensitivity, Multialkali Photocathode

28 mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type

The R928 and R955 feature extremely high quantum effi-

ciency, high current amplification, good S/N ratio and

wide spectral response from UV to near infrared. The

R928 employs a UV glass envelope and the R955 has a

fused silica envelope for UV sensitivity extension.

The R928 and R955 are well suited for use in broad-band

spectrophotometers, atomic absorption spectrophotomet-

ers, emission spectrophotometers and other precision

photometric instruments.

FEATURES

GWide Spectral Response

R928 ..................................................... 185 nm to 900 nm

R955 ..................................................... 160 nm to 900 nm

GHigh Cathode Sensitivity

Luminous ......................................................... 250 µA/lm

Radiant at 400 nm ............................................. 74 mA/W

GHigh Anode Sensitivity (at 1000 V)

Luminous ......................................................... 2500 A/lm

Radiant at 400 nm ..................................... 7.4 × 10⁵A/W

GLow Drift and Hysteresis

Figure 1: Typical Spectral Response

SPECIFICATIONS

TPMSB0001EB

100

GENERAL

R955

CATHODE

RADIANT

SENSITIVITY

Parameter

R928

Description/Value

Unit

—

Spectral

185 to 900

160 to 900

400

Multialkali

8 × 24

UV glass

Fused silica

Multialkali

Circular-cage

Response

R955

R928

Wavelength of Maximum Response

MateriaI

Minimum Effective Area

Photocathode

QUANTUM EFFICIENCY

Window

Material

R928

R955

Secondary Emitting Surface

Structure

—

Dynode

Number of Stages

Direct Interelectrode Anode to Last Dynode

—

0.1

Capacitances

Base

Anode to All Other Electrodes

11-pin base JEDEC No. B11-88

Approx. 45

Weight

Operating Ambient Temperature

Storage Temperature

SuitabIe Socket

-30 to +50

E678–11A (Sold Separately)

E717–63 (Sold Separately)

E717–74 (Sold Separately)

°C

—

0.01

100 200 300 400 500 600 700 800 900 1000

SuitabIe Socket Assembly

—

WAVELENGTH (nm)

Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are

PHOTOMULTIPLIERTUBES R928, R955

MAXIMUM RATINGS (Absolute Maximum Values)

Parameter

Value

1250

250

Unit

Between Anode and Cathode

Between Anode and Last Dynode

Supply Voltage

Average Anode Current ^A

0.1

CHARACTERISTlCS (at 25 °C)

R928

Typ.

25.4

(at 260 nm)

250

R955

Typ.

29.0

(at 220 nm)

250

Parameter

Unit

Min.

Max.

Min.

Max.

Quantum Efficiency

(at Peak Wavelength)

Luminous ^B

—

140

—

0.2

—

400

—

140

—

0.2

—

400

—

µA/lm

mA/W

—

at 194 nm

3.5

0.3

3.5

0.3

at 254 nm

at 400 nm

at 633 nm

at 852 nm

Cathode Sensitivity

Radiant

Red/White Ratio ^C

Blue Sensitivity Index ^D

—

Luminous ^E

2500

1.8 × 10⁵

5.2 × 10⁵

7.4 × 10⁵

4.1 × 10⁵

3.5 × 10⁴

1.0 × 10⁷

2500

4.3 × 10⁵

5.6 × 10⁵

7.4 × 10⁵

4.1 × 10⁵

3.5 × 10⁴

1.0 × 10⁷

A/lm

A/W

—

at 194 nm

at 254 nm

at 400 nm

at 633 nm

at 852 nm

Anode Sensitivity

Gain ^E

Radiant

Anode Dark Current ^F(After 30 min Storage in Darkness)

ENI (Equivalent Noise Input) ^H

1.3 × 10^-16

2.2

1.3 × 10^-16

2.2

Anode Pulse Rise Time ^I

Time Response ^E

Electron Transit Time ^J

Transit Time Spread (TTS) ^K

Light Hysteresis

1.2

0.1

1.0

1.2

0.1

1.0

Anode Current Stability ^L

Voltage Hysteresis

NOTES

A:Averaged over any interval of 30 seconds maximum.

H:ENI is an indication of the photon-limited signal-to-noise ratio. It refers to

the amount of light in watts to produce a signal-to-noise ratio of unity in the

output of a photomultiplier tube.

B:The light source is a tungsten filament lamp operated at a distribution tem-

perature of 2856K. Supply voltage is 100 V between the cathode and

all other electrodes connected together as anode.

C:Red/White ratio is the quotient of the cathode current measured using a

red filter(Toshiba R-68) interposed between the light source and the tube

by the cathode current measured with the filter removed under the same

conditions as Note B.

D:The value is cathode output current when a blue filter (Corning CS 5-58

polished to 1/2 stock thickness) is interposed between the light source and

the tube under the same condition as Note B.

E:Measured with the same light source as Note B and with the voltage distri-

bution ratio shown in Table 1 below.

. .

2q ldb G ∆f

ENI =

where q = Electronic charge (1.60 × 10^-19coulomb).

ldb = Anode dark current(after 30 minute storage) in amperes.

G = Gain.

∆f = Bandwidth of the system in hertz. 1 hertz is used.

S = Anode radiant sensitivity in amperes per watt at the wave-

length of peak response.

I: The rise time is the time for the output pulse to rise from 10 % to 90 % of the

peak amplitude when the entire photocathode is illuminated by a delta

function light pulse.

J: The electron transit time is the interval between the arrival of delta function

light pulse at the entrance window of the tube and the time when the anode

output reaches the peak amplitude. In measurement, the whole photo-

cathode is illuminated.

Table 1:Voltage Distribution Ratio

Electrode

Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9

Distribution

Ratio

SuppIy Voltage: 1000 V, K: Cathode, Dy: Dynode, P: Anode

K: Also called transit time jitter. This is the fluctuation in electron transit time

between individual pulses in the signal photoelectron mode, and may be

defined as the FWHM of the frequency distribution of electron transit times.

F: Measured with the same supply voltage and voltage distribution ratio as

Note E after removal of light.

G:Measured at a supply voltage adjusted to provide an anode sensitivity of

100 A/lm.

L: Hysteresis is temporary instability in anode current after light and voltage

are applied.

(1)Light Hysteresis

The tube is operated at 750 V with an anode current of 1 µA for 5 minutes.

The light is then removed from the tube for a minute. The tube is then

re-illuminated by the previous light level for a minute to measure the variation.

max.

min.

(2)Voltage Hysteresis

TIME

7 (minutes)

The tube is operated at 300 V with an anode current of 0.1 µA for 5 minutes.

The light is then removed from the tube and the supply voltage is quickly

increased to 800 V. After a minute, the supply voltage is then reduced to the

previous value and the tube is re-illuminated for a minute to measure the

variation.

TPMSB0002EA

min.

max.

Hysteresis =

× 100 (%)

Figure 2: Anode Luminous Sensitivity and Gain

Figure 3: Typical Time Response

Characteristics

TPMSB0003ED

TPMSB0004EC

10⁵

10⁴

10³

10⁸

10⁷

10⁶

100

TYPICAL GAIN

TYPICAL ANODE

SENSITIVITY

10²

10¹

10⁰

10⁵

10⁴

MINIMUM ANODE

SENSITIVITY

10³

10²

500

700

1000

1500

500

700

1000

1500

SUPPLY VOLTAGE (V)

Figure 4: Typical Temperature Coefficient of Anode

Sensitivity

Figure 5: Typical Temperature Characteristic of Dark Current

(at 1000 V, after 30 min storage in darkness)

TPMSB0005EB

TPMSB0006EB

100

160

800 nm

140

600 nm

120

100

400 nm

0.1

0.01

-30 -20

-10

+10 +20 +30 +40 +50

-30 -20

-10

+10 +20 +30 +40 +50

TEMPERATURE (°C)

PHOTOMULTIPLIERTUBES R928, R955

Figure 6: Dimensional Outline and Basing Diagram (Unit: mm)

Figure 7: Socket (Unit: mm) Sold Separately

28.5 1.5

8 MIN.

E678-11A

PHOTOCATHODE

DY6

DY7

DY5

DY4

DY8

DY3

9 DY9

DY2

DY1

DIRECTION OF LIGHT

Bottom View

(Basing Diagram)

32.2 0.5

11 PIN BASE

JEDEC No. B11-88

TPMSA0008EA

TACCA0064EA

Figure 8: D Type Socket Assembly (Unit: mm) Sold Separately

E717-63

E717-74

HOUSING

(INSULATOR)

SOCKET

PMT

PIN No.

SIGNAL GND

SIGNAL OUTPUT

RG-174/U(BLACK)

SIGNAL

OUTPUT (A)

GND (G)

POWER SUPPLY GND

AWG22 (BLACK)

R10

DY9

DY8

DY7

DY6

DY5

DY4

DY3

DY2

38.0 0.3

49.0 0.3

26.0 0.2

32.0 0.5

DY8

DY7

DY6

DY5

DY4

DY3

DY2

DY1

TOP VIEW

29.0 0.3

R1 to R10 : 330 kΩ

C1 to C3 : 10 nF

R1 to R10 : 330 kΩ

C1 to C3 : 10 nF

31.0 0.5

22.4 0.2

HOUSING

SIDE VIEW

(INSULATOR)

POTTING

COMPOUND

0.7

DY1

-HV (K)

-HV

AWG22 (VIOLET)

4- 2.8

R13

* "Wiring diagram applies when -HV is supplied."

To supply +HV,connect the pin "G" to+HV, and the pin

"K" to the GND.

BOTTOM VIEW

TACCA0002EH

TACCA0277EA

* Hamamatsu also provides C4900 series compact high voltage power

supplies and C6270 series DP type socket assemblies which incor-

porate a DC to DC converter type high voltage power supply.

Warning–Personal Safety Hazards

Electrical Shock–Operating voltages applied to this

device present a shock hazard.

WEB SITE www.hamamatsu.com

HAMAMATSU PHOTONICS K.K., Electron Tube Division

314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk

North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se

Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it

TPMS1001E07

JUL. 2006. IP

R928_15 [HAMAMATSU]

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