R943-02_15 [HAMAMATSU]

GaAs (Cs) Photocathode, Wide Spectral Response, 51 mm (2) Diameter Head-on Type for Photon Counting, Low Dark Counts, Excellent P.H.D.;
R943-02_15
型号: R943-02_15
厂家: HAMAMATSU CORPORATION    HAMAMATSU CORPORATION
描述:

GaAs (Cs) Photocathode, Wide Spectral Response, 51 mm (2) Diameter Head-on Type for Photon Counting, Low Dark Counts, Excellent P.H.D.

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PHOTOMULTIPLIER TUBE  
R943-02  
GaAs (Cs) Photocathode, Wide Spectral Response, 51 mm (2") Diameter  
Head-on Type for Photon Counting, Low Dark Counts, Excellent P.H.D.  
FEATURES  
Wide Spectral Response ............. 160 nm to 930 nm  
High Quantum Efficiency in Near IR ... 14 % at 632.8 nm  
Fast Rise Time ................................. 3.0 ns at 1500 V  
Excellent Single Photoelectron  
Pulse Height Distribution  
........................... Peak to Valley Ratio 2.3 (at -20 °C)  
Low Dark Counts ..................... 20 s-1 Typ. (at -20 °C)  
APPLICATIONS  
Raman Spectroscopy  
Fluorescent Spectroscopy  
Astrophysical Measurement  
Laser Detection  
Hamamatsu R943-02 is a 51 mm (2") diameter head-on type photomultiplier tube having GaAs (Cs) photocathode and synthetic  
silica window. The combination of the GaAs photocathode and the synthetic silica window allows high sensitivity over a wide spectral  
range from UV to IR (160 nm to 930 nm).  
The R943-02 is selected for photon counting and features low dark counts and excellent pulse height distribution (PHD) of single  
photoelectrons.  
Figure 1: Typical Spectral Response  
GENERAL  
TPMHB0281EA  
Parameter  
Description / Value  
160 to 930  
Unit  
nm  
102  
101  
100  
Spectral Response  
Wavelength of Maximum Response  
Photocathode  
300 to 800  
nm  
MateriaI  
GaAs(Cs)  
10 × 10  
Opaque  
mm  
QUANTUM  
EFFICIENCY  
Minimum Effective Area  
Mode  
Window Material  
Synthetic silica glass  
CATHODE  
RADIANT  
SENSITIVITY  
Dynode  
Secondary Emitting Surface  
Structure  
Cu-BeO  
Linear focused  
10  
Number of Stages  
Direct Interelectrode Capacitances  
Anode to Last Dynode  
Anode to All Other Electrodes  
Base  
Approx. 2.7  
Approx. 5.0  
pF  
pF  
g
-1  
-2  
10  
10  
21-pin glass base  
E678–21C (supplied)  
93  
SuitabIe Socket  
Weight  
Operating Ambient Temperature  
Storage Temperature  
-30 to +50  
°C  
°C  
200  
400  
600  
800  
1000  
-80 to +50  
WAVELENGTH (nm)  
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are  
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2010 Hamamatsu Photonics K.K.  
PHOTOMULTIPLIER TUBE R943-02  
MAXIMUM RATINGS (Absolute Maximum Values)  
Parameter  
Supply Voltage  
Value  
Unit  
Between Anode and Cathode  
Between Anode and Last Dynode  
Average Anode Current A  
Average Pulse Count Rate B  
Average Cathode Current C  
2200  
250  
1
6 × 106  
V
V
µA  
s-1  
nA  
1
CHARACTERISTlCS (at 25 °C)  
Parameter  
Min.  
Typ.  
Max.  
Unit  
Cathode Sensitivity D  
Quantum Efficiency  
at 253.7 nm (Hg-Line)  
at 632.8 nm (He-Ne Laser)  
Luminous E  
15  
14  
%
%
300  
600  
30  
µA/lm  
mA/W  
mA/W  
mA/W  
mA/W  
Radiant at 253.7 nm (Hg-Line)  
at 632.8 nm (He-Ne Laser)  
at 700 nm  
70  
71  
at 852.1 nm (Cs-Line)  
Red/White Ratio F  
65  
0.58  
Anode Sensitivity G  
Luminous E  
150  
300  
1.5 × 104  
3.5 × 104  
3.6 × 104  
3.3 × 104  
5 × 105  
1
10  
50  
A/lm  
A/W  
A/W  
A/W  
A/W  
Radiant at 253.7 nm (Hg-Line)  
at 632.8 nm (He-Ne Laser)  
at 700 nm  
at 852.1 nm (Cs-Line)  
Gain G  
Equivalent Anode Dark Current H  
Anode Dark Counts J  
Single Photoelectron PHD (Peak to Valley Ratio)  
Time Response G  
nA  
s-1  
20  
2.3  
Anode Pulse Rise Time K  
Electron Transit Time L  
3.0  
23  
ns  
ns  
NOTES  
AAveraged over any interval of 30 seconds maximum.  
BMeasured at single photoelectron level. The discriminator level is set at val-  
ley point.  
CIn practical operation, the cathode current should be lower than 0.1 nA to  
prevent shortening the life of the photocathode.  
LThe electron transit time is the interval between the arrival of a delta func-  
tion light pulse at the entrance window of the tube and the time when the  
output pulse reaches the peak amplitude. In measurement the entire pho-  
tocathode is illuminated.  
DSupply voltage is 150 volts between the cathode and all other electrodes.  
EThe light source is a tungsten filament lamp operated at a distribution tem-  
perature of 2856 K.  
FThe quotient of the cathode sensitivity measured with the light source is  
the same as Note D passing through a red filter (Toshiba R-68) divided by  
the cathode luminous sensitivity without the red filter.  
GMeasured with supply voltage and voltage distribution ratio in Table 1.  
HMeasured with supply voltage to provide the anode luminous sensitivity of  
200 (A/lm) and the voltage distribution ratio in Table 1 after 30 minute stor-  
age in the darkness.  
JMeasured with supply voltage that gives 2 × 106 gain and with the voltage  
distribution ratio shown in Table 1 after one hour storage in the cooler set  
at -20 °C.  
Table 1: Voltage Distribution Ratio  
Electrode  
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10  
1.5 1  
P
3
1
1
1
1
1
1
1
1
Distribution Ratio  
SuppIy Voltage : 1500 V, K : Cathode, Dy : Dynode, P : Anode  
Replacement Information  
The R943-02 is similar to the Burle C31034 series photomultiplier tube. The base  
and voltage divider are different.  
Warning–Personal Safety Hazards  
Electrical Shock Operating voltages  
applied to this device present a shock hazard.  
The discriminator is set at 1/3 of a single photoelectron level.  
KThe rise time is the time it takes the output pulse to rise from 10 % to 90 %  
of the peak amplitude when the entire photocathode is illuminated by a  
delta function light pulse.  
Figure 2: Typical Single Photoelectron  
Pulse Height Distribution  
Figure 3: Typical Gain  
TPMHB0282EA  
TPMHB0283EA  
1.0  
108  
WAVELENGTH OF INCIDENT LIGHT: 800 nm  
LOWER LEVEL DISCRIMINATION : 87 CH  
SIGNAL+DARK COUNTS  
DARK COUNTS  
107  
106  
105  
104  
103  
: 5329 s-1  
: 20 s-1  
0.8  
TEMPERATURE  
: -20 °C  
0.6  
0.4  
0.2  
0
SIGNAL+DARK  
DARK  
102  
500  
0
512  
1024  
1000  
1500  
2000 2500  
CATHODE TO ANODE VOLTAGE (V)  
CHANNEL NUMBER (CH)  
Figure 4: Typical Time Response  
Figure 5: Typical Temperature Coefficient  
of Quantum Efficiency  
TPMHB0045EA  
TPMHB0284EA  
102  
2
1.5  
TEMPERATURE RANGE: 10 to 40 (°C)  
1
TRANSIT TIME  
0.5  
0
101  
-0.5  
-1  
RISE TIME  
-1.5  
-2  
100  
500  
300  
400  
500  
600  
700  
800  
900 1000  
1000  
1500  
2000  
3000  
SUPPLY VOLTAGE (V)  
WAVELENGTH (nm)  
Figure 6: Typical Dark Counts vs. Temperature  
TPMHB0285EB  
105  
COOLING  
As Figure 6 shows, the dark counts of the R943-02 decreases  
by cooling the tube. Therefore, when performing photon count-  
ing, it is recommended that the tube be cooled down to about  
-20 °C. The cooler C10372 which features temperature control  
from -30 °C to 0 °C is available from HAMAMATSU.  
104  
103  
102  
101  
100  
-30  
-20  
-10  
0
10  
20  
TEMPERATURE (°C)  
PHOTOMULTIPLIER TUBE R943-02  
Figure 7: Dimensional Outline and Basing Diagram (Unit: mm)  
a)  
Orientation of Photocathode  
with respect to base pin  
b) PHOTOCATHODE  
X Axis Cross Section  
22.0  
INPUT WINDOW  
51 1  
X
TOP VIEW  
15  
PIN 3  
PIN 1  
Y
PHOTOCATHODE  
(10 × 10)  
90 ° 2.5 °  
3.4  
6.6  
PIN 14  
10  
PHOTOCATHODE  
PHOTOCATHODE  
CENTER  
1.6  
BOTTOM VIEW  
IC  
11  
DY9  
DY7  
DY5  
IC  
IC  
8
7
6
10  
12  
IC  
13  
14  
15  
9
Y Axis Cross Section  
PHOTOCATHODE CENTER  
INPUT WINDOW  
P
DY3  
DY1  
IC  
22.0  
DY10  
16  
17  
18  
1.6  
DY8  
DY6  
5
PHOTOCATHODE  
11.5  
4
IC  
19  
3
HA-COATING  
(Conductive  
paint connected  
to the photocathode)  
20  
2
DY4  
DY2  
IC  
21  
IC  
1
IC  
K
SHORT PIN  
15° 1°  
LIGHT SHIELD  
(SILICONE)  
Dy: Dynode  
K : Photocathode  
P : Anode  
IC : Internal Connection  
(should not be used)  
PHOTOCATHODE  
TUBE CENTER  
TPMHA0286EA  
TPMHA0022EB  
TPMHA0023EB  
c) SOCKET(Refer to NOTES A)  
E67821C (Supplied)  
51  
19  
R5  
TACCA0066EC  
REMARKS  
CAUTIONS  
HA coating  
Use the HAMAMATSU SOCKET E678-21C.  
When soldering the voltage dividers to the socket, the PMT should be inserted in the socket.  
The R943-02 is coated with the conductive paint  
connected to the cathode, which is covered with an  
insulating material (HA coating). This method de-  
creases noise. Care should be taken not to dam-  
age the insulating cover wrapping around the bulb.  
Helium will permeate through the silica bulb, leading to an increase in noise. Avoid operating or stor-  
ing tubes in an environment where helium is present.  
As the R943-02 has a synthetic silica window, a very thin graded sealing structure is used in the  
bulb wall. Although it is covered with an insulating cover, extreme care should be taken in handling.  
www.hamamatsu.com  
HAMAMATSU PHOTONICS K.K.  
HAMAMATSU PHOTONICS K.K., Electron Tube Division  
314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205  
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com  
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de  
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr  
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk  
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se  
TPMH1115E07  
DEC. 2010 IP  
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it  

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