S10113-1024Q [HAMAMATSU]
Current-output type sensors with variable integration time function; 电流输出型传感器，具有可变积分时间功能
| 型号： | S10113-1024Q |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | Current-output type sensors with variable integration time function |
| 文件： | 总11页 (文件大小：188K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMOS linear image sensors
S10111 to S10114 series
Current-output type sensors with
variable integration time function
The S10111 to S10114 series are self-scanning photodiode arrays designed speci¿cally as detectors for spectroscopy. The scan-
ning circuit operates at low power consumption and is easy to handle. Each photodiode has a large active area with high UV sen-
sitivity.
Features
Applications
Variable integration time for each pixel
Spectrophotometry
Wide active area
Pixel pitch: 50 m, 25 m
Pixel height: 2.5 mm, 0.5 mm
High UV sensitivity
Large saturation output charge
Absolute maximum ratings
Parameter
Supply voltage
Clock pulse voltage
Start pulse voltage
Integration time control pulse
OverÀow gate voltage
Symbol
Vdd
V(CLK)
V(ST)
V(INT)
Vofg
Vofd
Topr
Tstg
Condition
Ta=25 °C
Ta=25 °C
Ta=25 °C
Ta=25 °C
Ta=25 °C
Ta=25 °C
Value
Unit
V
V
V
V
V
V
°C
°C
-0.3 to +6
-0.3 to +6
-0.3 to +6
-0.3 to +6
-0.3 to +6
-0.3 to +6
-5 to +65
-10 to +85
OverÀow drain voltage
1
Operating temperature
*
1
Storage temperature
*
1: No condensation
*
Shape speci¿cations
Pixel pitch
(m)
Pixel height
(mm)
Weight
Type no.
Number of pixels
Package
Ceramic
Window material
(g)
3.0
3.5
3.0
3.5
3.0
3.5
3.0
3.5
S10111-128Q
S10111-256Q
S10111-512Q
S10112-128Q
S10112-256Q
S10112-512Q
S10113-256Q
S10113-512Q
S10113-1024Q
S10114-256Q
S10114-512Q
S10114-1024Q
128
256
512
128
256
512
256
512
1024
256
512
1024
2.5
0.5
0.5
2.5
50
Quartz
(t=0.5 mm)
25
1
www.hamamatsu.com
CMOS linear image sensors
S10111 to S10114 series
Recommended terminal voltage (Ta=25 °C)
Parameter
Symbol
Vdd
Min.
4.75
Typ.
5
Max.
5.25
Unit
V
Supply voltage
High level
Low level
High level
Low level
High level
Low level
Vdd - 0.25
Vdd
-
Vdd
-
Vdd
-
Vdd + 0.25
0.4
Vdd + 0.25
0.4
Vdd + 0.25
0.4
Clock pulse voltage
Start pulse voltage
V(CLK)
V(ST)
V
V
V
0
Vdd - 0.25
0
Vdd - 0.25
0
Integration time control pulse
voltage
V(INT)
OverÀow drain voltage
OverÀow gate voltage
Vofd
Vofg
0.5
0.17
2
0.2
2.5
0.23
V
V
Electrical characteristics [Ta=25 °C, Vdd=5 V, Vb=Vofd=2 V, Vofg=0.2 V]
Parameter
S10111/S10114 series
S10112/S10113 series
Symbol
f(CLK)
VR
Min.
10 k
10 k
Typ.
-
-
f(CLK)
0.75
1.75
4.25
1.5
Max.
250 k
500 k
Unit
Hz
Clock pulse
frequency
Video data rate
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Hz
S10111-128Q
S10111-256Q
S10111-512Q
S10112-128Q
S10112-256Q
S10112-512Q
S10113-256Q
S10113-512Q
S10113-1024Q
S10114-256Q
S10114-512Q
S10114-1024Q
S10111/S10112-128Q
S10111/S10112-256Q
S10111/S10112-512Q
S10113/S10114-256Q
S10113/S10114-512Q
S10113/S10114-1024Q
3.5
8.25
3.25
7.25
18.25
1.75
3.75
8.25
10
14
22
13
19
Power
consumption
P
mW
2
*
Video line
capacitance
(Vb=2 V)
Cv
pF
32
2: f(CLK)=250 kHz (S10111/S10114 series), 500 kHz (S10112/S10113 series)
*
2
CMOS linear image sensors
S10111 to S10114 series
Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, Vb=Vofd=2 V, Vofg=0.2 V, f(CLK)=200 kHz]
Parameter
Spectral response range
Peak sensitivity wavelength
S10111 series
Symbol
O
Op
Min.
200
-
-
-
Typ.
-
Max.
1000
Unit
nm
nm
750
0.2
0.04
0.04
0.2
140
28
14
70
580
-
-
0.6
0.12
0.12
0.6
-
-
-
-
S10112 series
S10113 series
S10114 series
S10111 series
S10112 series
S10113 series
S10114 series
Dark current
ID
pA
pC
-
-
110
22
11
55
Saturation output
charge
Qsat
3
Saturation exposure
Esat
PRNU
mlx · s
%
*
3
4 5
Photo response non-uniformity
* * *
-
±3
*3: Measured with a tungsten lamp of 2856 K
*4: Photo response non-uniformity is de¿ned under the condition that the device is uniformly illuminated by light which is 50 % of the
saturation exposure level as follows:
PRNU= 'X/X × 100 (%)
X: the average output of all pixels, 'X: difference between X and maximum or minimum output.
*5: Except for the ¿rst and last pixels
Spectral response (typical example)
(Ta=25 °C)
400
300
200
100
0
200 300 400 500 600 700 800 900 1000 1100 1200
Wavelength (nm)
KMPDB0250ED
3
CMOS linear image sensors
S10111 to S10114 series
Block diagram
CLK
ST
Shift register
EOS
INT
Active Video
Dummy Video
Address switch array
Vdd
Photodiode array
Overflow drain
GND
Vofd
Vofg
KMPDC0232EC
Equivalent circuit
ST
D
Q
D
C
Q
Q
D
C
Q
D
C
Q
Q
EOS
C
Q
Q
CLK
INT
Active Video
1st pixel
2nd pixel
Last pixel
Dummy Video
KMPDC0279EB
4
CMOS linear image sensors
S10111 to S10114 series
Timing chart
CLK
tpi(ST), integration time
ST
INT
Active Video
(available term)
Last pixel
1st 2nd 3rd 4th
1st 2nd 3rd 4th
EOS
Enlarged view
tf(CLK)
tr(CLK)
CLK
1/f(CLK)
tr(ST)
tf(ST)
t(ST-CLK)
t(CLK-ST)
ST
t(INT-CLK)
t(CLK-INT)
INT should be "high" when not reading pixels.
INT
tr(INT)
2nd
tf(INT)
3rd
Active Video (available term)
1st
4th
5th
Allow CLK pulse transition from “high” to “low” only one time while ST pulse is “high”.
Integration time is determined by the interval between start pulses.
Only the switching noise component is output from the Dummy Video line.
Do not use the Dummy Video output during integration readout.
The INT signal is not needed between EOS and the rising edge of the next ST signal.
KMPDC0249ED
Parameter
Symbol
tpi(ST)
Min.
130/f(CLK)
258/f(CLK)
514/f(CLK)
Typ.
-
-
Max.
-
-
-
Unit
s
*
S1011 -128
*
S1011 -256
Start pulse (ST) interval
*
S1011 -512
-
*
S1011 -1024
1026/f(CLK)
-
-
INT pulse rise and fall times
tr(INT), tf(INT)
t(INT-CLK)
t(CLK-INT)
tf(ST), tr(ST)
-
0
20
-
-
20
50
20
-
30
ns
ns
ns
ns
%
ns
ns
ns
INT pulse - clock pulse timing
Clock pulse - INT pulse timing
Start pulse rise and fall times
Clock pulse duty ratio
Clock pulse rise and fall times
Clock pulse - start pulse timing
Start pulse - clock pulse timing
30
30
0
40
0
1 / [2 × f(CLK)]
1 / [2 × f(CLK)]
30
60
30
-
tf(CLK), tr(CLK)
t(CLK-ST)
20
20
T(ST-CLK)
-
-
5
CMOS linear image sensors
S10111 to S10114 series
Current-integration readout circuit example and timing chart
Readout circuit example
Reset
CLK
MST
ST
PLD
MCLK
INT
Amp
Buffer
Cf
Data
Video
Trigger
Active
Video
C-V
Clamp
EOS
KMPDC0385EB
Timing chart
MST
MCLK
ST
CLK
INT
Reset
Clamp
Trigger
Data Video
EOS
KMPDC0386EA
6
CMOS linear image sensors
S10111 to S10114 series
Variable integration time function
By controlling the clock pulse to the INT terminal, the integration time for each pixel can be changed to any length that is an integer mul-
tiple of one readout period. When the clock pulse at the INT terminal is set to “high” at the pixel signal readout timing, then no signal is
output from that pixel (see below). This allows the signal charge to continuously accumulate in that pixel as long as no signal is output. For
example, when the integration time of one readout period is 100 ms and this function is used to output a signal from a pixel once every 3
readout periods, then the integration time of that pixel will be 300 ms. Using this function to lengthen the integration time of certain pixels
makes it possible to effectively detect spectral signals of weak wavelength components.
Timing chart
(Concept view showing the settings to double, triple and quadruple the integration times at channels 2, 3 and 4, respectively, by using
the variable integration time function on the basis of the integration time at channel 1.)
CLK
ST
Readout
timing
1 2 3 4
1 2 3 4
1 2 3 4
1 2 3 4
1 2 3 4
INT
1 ch integration time
2 ch integration time
3 ch integration time
4 ch integration time
Output
Invalid data
Valid data
KMPDC0233EC
7
CMOS linear image sensors
S10111 to S10114 series
Dimensional outlines (unit: mm)
S10111-128Q, S10114-256Q
Active area
6.4 × 2.5
3.2 0.3
22
1
12
11
1 ch
Index mark
31.75 0.3
Direction of scan
Photosensitive
surface
0.51 0.05
2.54 0.13
0.25
25.4 0.13
10.16 0.25
*1: Distance from upper surface of quartz
window to chip surface
*2: Distance from photosensitive surface
to bottom of package
*3: Window thickness
KMPDA0060EE
S10111-256Q, S10114-512Q
Active area
12.8 × 2.5
6.4 0.3
22
1
12
1 ch
11
Index mark
31.75 0.3
Direction of scan
Photosensitive
surface
0.51 0.05
2.54 0.13
0.25
25.4 0.13
10.16 0.25
*1: Distance from upper surface of quartz
window to chip surface
*2: Distance from photosensitive surface
to bottom of package
*3: Window thickness
KMPDA0061EE
8
CMOS linear image sensors
S10111 to S10114 series
S10111-512Q, S10114-1024Q
Active area
25.6 × 2.5
12.8 0.3
22
1
12
11
1 ch
Index mark
40.6 0.3
Direction of scan
Photosensitive
surface
0.51 0.05
2.54 0.13
0.25
10.16 0.25
25.4 0.13
*1: Distance from upper surface of quartz
window to chip surface
*2: Distance from photosensitive surface
to bottom of package
*3: Window thickness
KMPDA0062EE
S10112-128Q, S10113-256Q
Active area
6.4 × 0.5
3.2 0.3
12
22
1
1 ch
11
Index mark
31.75 0.3
Direction of scan
Photosensitive
surface
0.51 0.05
2.54 0.13
0.25
10.16 0.25
25.4 0.13
*1: Distance from upper surface of quartz
window to chip surface
*2: Distance from photosensitive surface
to bottom of package
*3: Window thickness
KMPDA0215EE
9
CMOS linear image sensors
S10111 to S10114 series
S10112-256Q, S10113-512Q
Active area
12.8 × 0.5
6.4 0.3
22
1
12
11
1 ch
Index mark
31.75 0.3
Direction of scan
Photosensitive
surface
0.51 0.05
2.54 0.13
0.25
25.4 0.13
10.16 0.25
*1: Distance from upper surface of quartz
window to chip surface
*2: Distance from photosensitive surface
to bottom of package
*3: Window thickness
KMPDA0216EE
S10112-512Q, S10113-1024Q
Active area
25.6 × 0.5
12.8 0.3
12
22
1
1 ch
11
Index mark
40.6 0.3
Direction of scan
Photosensitive
surface
0.51 0.05
2.54 0.13
0.25
10.16 0.25
25.4 0.13
*1: Distance from upper surface of quartz
window to chip surface
*2: Distance from photosensitive surface
to bottom of package
*3: Window thickness
KMPDA0217EE
10
CMOS linear image sensors
S10111 to S10114 series
Pin connection
Index mark
Pin no.
1
Symbol
ST
INT
Vofg
Vdd
GND
GND
Vdd
Name of pin
Start pulse
Integration time control pulse
OverÀow gate voltage
Supply voltage
I/O
Input
Input
Input
Input
Input
Input
Input
Input
Output
Output
Input
Output
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
ST
INT
1
22
21
20
19
18
17
16
15
14
13
12
CLK
NC
NC
NC
NC
NC
NC
NC
NC
NC
EOS
2
Ground
Ground
Supply voltage
OverÀow drain voltage
Video output
Dummy video output
Ground
Vofg
3
Vdd
4
Vofd
Active Video
Dummy Video
GND
5
GND
6
GND
EOS
NC
NC
NC
NC
NC
NC
NC
Vdd
7
End of scan
Vofd
8
Active Video
Dummy Video
GND
9
10
11
No connection
Clock pulse
KMPDC0230EC
NC
NC
CLK
Input
Precautions during use
(1) Electrostatic countermeasures
This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic
charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this de-
vice from surge voltages which might be caused by peripheral equipment.
(2) Incident window
If dust or dirt gets on the light incident window, it will show up as black blemishes on the image. When cleaning, avoid rubbing the
window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. Use soft cloth, paper or a cotton swab
moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window surface so that no spot
or stain remains.
(3) Soldering
To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Soldering
should be performed within 5 seconds at a soldering temperature below 260 °C.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed in the specification sheets or supplied as samples may have a suffix “(X)” which means tentative specifications or a suffix “(Z)”
which means developmental specifications. ©2010 Hamamatsu Photonics K.K.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
11
Cat. No. KMPD1090E07 Oct. 2010 DN
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