S10141-1107S [HAMAMATSU]
CCD area image sensor Low readout noise, high resolution (pixel size: 12 レm); CCD面积图像传感器的低读出噪声，高分辨率（像素尺寸： 12レM）
| 型号： | S10141-1107S |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | CCD area image sensor Low readout noise, high resolution (pixel size: 12 レm) |
| 文件： | 总8页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
I M A G E S E N S O R
CCD area image sensor
S10140/S10141 series
Low readout noise, high resolution (pixel size: 12 µm)
S10140/S10141 series is a family of back-thinned FFT-CCD image sensors specifically designed for low-light-level detection in scientific
applications. By using the binning operation, S10140/S0141 series can be used as a linear image sensor having a long aperture in the direction of
the device length. This makes S10140/S10141 series ideally suited for use in spectrophotometry. The binning operation offers significant
improvement in S/N and signal processing speed compared with conventional methods by which signals are digitally added by an external circuit.
S10140/S10141 series also features low noise and low dark signal (MPP mode operation). This enables low-light-level detection and long
integration time, thus achieving a wide dynamic range.
S10140/S10141 series has an effective pixel size of 12 × 12 µm and is available in image areas ranging from 12.288 (H) × 1.464 (V) mm2 (1024 ×
122 pixels) up to a large image area of 24.576 (H) × 6.072 (V) mm2 (2048 × 506 pixels).
Features
Applications
-
Low readout noise: 4 e rms Typ.
High resolution: pixel size 12 × 12 µm
Non-cooled type: S10140 series
One-stage TE-cooled type: S10141 series
Line, pixel binning, area scanning
Greater than 90 % quantum efficiency at peak sensitivity
wavelength
Fluorescence spectrometer, ICP
Industrial inspection requiring
Semiconductor inspection
DNA sequencer
Low-light-level detection
Wide spectral response range
Wide dynamic range
MPP operation
High UV sensitivity with good stability
Same pin connections as S7030/S7031 series
ꢀ Selection guide
Suitable
multichannel
detector head
Number of total
pixels
Number of active
pixels
Active area
[mm (H) × mm (V)]
Type No.
Cooling
S10140-1007
S10140-1008
S10140-1009
S10140-1107
S10140-1108
S10140-1109
S10141-1007S
S10141-1008S
S10141-1009S
S10141-1107S
S10141-1108S
S10141-1109S
1044 × 128
1044 × 256
1044 × 512
2068 × 128
2068 × 256
2068 × 512
1044 × 128
1044 × 256
1044 × 512
2068 × 128
2068 × 256
2068 × 512
1024 × 122
1024 × 250
1024 × 506
2048 × 122
2048 × 250
2048 × 506
1024 × 122
1024 × 250
1024 × 506
2048 × 122
2048 × 250
2048 × 506
12.288 × 1.464
12.288 × 3.000
12.288 × 6.072
24.576 × 1.464
24.576 × 3.000
24.576 × 6.072
12.288 × 1.464
12.288 × 3.000
12.288 × 6.072
24.576 × 1.464
24.576 × 3.000
24.576 × 6.072
Non-cooled
C10150
C10151
One-stage
TE-cooled
ꢀ General ratings
Parameter
S10140 series
S10141 series
Pixel size
12 (H) × 12 (V) µm
Vertical clock phase
Horizontal clock phase
Output circuit
Package
2 phases
2 phases
One-stage MOSFET source follower
24 pin ceramic DIP (refer to dimensional outlines)
Window *1
Quartz glass
AR-coated sapphire
*1: Window-less is available upon request.
1
CCD area image sensor S10140/S10141 series
ꢀꢀAbsolute maximum ratings (Ta=25 °C)
Parameter
Operating temperature
Storage temperature
OD voltage
RD voltage
ISV voltage
ISH voltage
IGV voltage
IGH voltage
SG voltage
OG voltage
RG voltage
TG voltage
Vertical clock voltage
Horizontal clock voltage
Symbol
Topr
Tstg
VOD
VRD
VISV
VISH
VIG1V, VIG2V
VIG1H, VIG2H
VSG
Min.
-50
-50
-0.5
-0.5
-0.5
-0.5
-10
-10
-10
-10
-10
-10
-10
-10
Typ.
Max.
+30
+70
+30
+18
+18
+18
+15
+15
+15
+15
+15
+15
+15
+15
Unit
°C
°C
V
V
V
V
V
V
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VOG
VRG
VTG
V
V
V
V
VP1V, VP2V
VP1H, VP2H
V
ꢀꢀOperating conditions (MPP mode, Ta=25 °C)
Parameter
Output transistor drain voltage
Reset drain voltage
Output gate voltage
Substrate voltage
Symbol
VOD
VRD
VOG
VSS
Min.
-
-
-
-
-
-
-9
-9
-
-
-
-
-
-
-
-
-
Typ.
24
12
3
Max.
Unit
V
V
V
V
V
V
V
V
-
-
-
-
-
-
0
0
-
-
-
-
-
-
-
-
-
-
0
Test point (vertical input source)
Test point (horizontal input source)
Test point (vertical input gate)
Test point (horizontal input gate)
Vertical shift register
clock voltage
VISV
VISH
VRD
VRD
-8
-8
3
-8
5
-8
5
-8
5
-8
3
VIG1V, VIG2V
VIG1H, VIG2H
VP1VH, VP2VH
VP1VL, VP2VL
VP1HH, VP2HH
VP1HL, VP2HL
VSGH
High
Low
High
Low
High
Low
High
Low
High
Low
V
V
V
V
V
Horizontal shift register
clock voltage
Summing gate voltage
Reset gate voltage
VSGL
VRGH
VRGL
VTGH
Transfer gate voltage
VTGL
-
-8
ꢀ Electrical characteristics (Ta=25 °C)
Parameter
Signal output frequency
Vertical shift register capacitance *2
Horizontal shift register capacitance *2
Summing gate capacitance
Reset gate capacitance
Transfer gate capacitance
Charge transfer efficiency *3
DC output level *4
Output impedance *4
Power consumption *4 *5
Symbol
fc
CP1V, CP2V
CP1H, CP2H
CSG
Min.
-
-
-
-
-
-
Typ.
250
3600
150
30
30
75
0.99999
17
Max.
500
-
-
-
-
-
-
18
-
Unit
kHz
pF
pF
pF
pF
pF
-
CRG
CTG
CTE
Vout
Zo
P
0.99995
12
-
-
V
kΩ
mW
8
4
-
*2: S10140-1108, S10141-1108S
*3: Charge transfer efficiency per pixel, measured at half of the full well capacity.
*4: The values depend on the load resistance. (Typical, VOD=24 V, Load resistance=100 kΩ)
*5: Power consumption of the on-chip amplifier
2
CCD area image sensor S10140/S10141 series
ꢀ Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Fw × Sv
75
150
200
Max.
-
-
-
-
Unit
V
Saturation output voltage
Vsat
-
Vertical
Horizontal
Summing
60
120
150
4
Full well capacity
Fw
Sv
ke-
CCD node sensitivity
5
6
µV/e-
e-
25 °C
0 °C
-
-
100
5
1000
50
Dark current *6
MPP mode
DS
/pixel/
s
Readout noise *7
Nr
-
4
18
-
-
10
-
0
10
3
0
e- rms
Line binning
Area scanning
30000
15000
37500
18500
-
Dynamic range *8
DR
-
%
nm
-
-
-
Photo response non-uniformity *9
Spectral response range
PRNU
λ
-
-
-
-
-
-
3
200 to 1100
W hite spots
Black spots
-
-
-
-
Point defect *10
Blemish
-
Cluster defect *11
Column defect *12
-
*6: Dark current nearly doubles for every 5 to 7 °C increase in temperature.
*7: -50 °C, Operating frequency is 20 kHz.
*8: Dynamic range (DR) = Full well/Readout noise
*9: Measured at the half of the full well capacity output.
Fixed pattern noise (peak to peak)
Photo response non-uniformity (PRNU) [%]
× 100
Signal
*10: W hite spots
-
Pixels whose dark current is higher than 1 ke after one-second integration at 0 °C.
Black spots
Pixels whose sensitivity is lower than one-half of the average pixel output. (Measured with uniform light producing one-half
of the saturation charge)
*11: 2 to 9 contiguous defective pixels
*12: 10 or more contiguous defective pixels
ꢀꢀSpectral response (without window) *10
ꢀꢀSpectral transmittance characteristics
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
100
100
90
80
70
60
50
40
30
20
BACK-THINNED
S10140/S10141
SERIES
90
80
QUARTZ WINDOW
70
AR COATED SAPPHIRE
60
50
40
30
20
10
FRONT-ILLUMINATED
(UV COAT)
10
0
FRONT-ILLUMINATED
600 800
WAVELENGTH (nm)
0
100 200 300 400 500 600 700 800 900 1000 1100 1200
200
400
1000
1200
WAVELENGTH (nm)
KMPDB0254EA
KMPDB0110EA
ꢀꢀWindow material
*10: Spectral response with quartz glass or AR-coated
sapphire are decreased by the transmittance.
Type No.
Window material
Quartz glass *11
(option: window-less)
ꢀ Dark current vs. temperature
S10140 series
S10141 series
(Typ.)
1000
AR-coated sapphire *12
(option: window-less)
100
10
1
S10142 series
(two-stage
TE-cooled types,
made to order)
AR-coated sapphire *12
(option: window-less)
*11: Resin sealing
*12: Hermetic sealing
0.1
0.01
-50
-40 -30
-20 -10
0
10
20
30
TEMPERATURE (˚C)
KMPDB0255EA
3
CCD area image sensor S10140/S10141 series
ꢀ Device structure (Conceptual drawing of top view)
THINNING
20
22
23
V
4
3
2
1 2 3 4 5
H
1
12
11
V=122, 250, 506
H=1024, 2048
3
8
9
10
n
4 BLANK
4 BLANK
2
SIGNAL OUT
6 BEVEL
6 BEVEL
KMPDC0244EA
ꢀꢀTiming chart
Linebininng
INTEGRATION PERIOD
(Shutter must be open)
VERTICAL BINNING PERIOD
(Shutter must be closed)
READOUT PERIOD (Shutter must be closed)
64← 58 + 6 (BEVEL): S1014 -1007/-1107
3.. 62
63
*
3..126 127
3..254 255
128← 122 + 6 (BEVEL): S1014 -1008/-1108
*
Tpwv
256← 250 + 6 (BEVEL): S1014 -1009/-1109
*
1
2
P1V
Tovr
P2V, TG
P1H
Tpwh, Tpws
4..530 531
4..1042 1043
532 : S1014 -1007/-1008/-1009
*
1044: S1014 -1107/-1108/-1109
*
1
2
3
P2H, SG
Tpwr
D1
RG
OS
D2
S1..S512
D19
D20: S1014 -1007/-1008/-1009
*
D3..D10, S1..S1024, D11..D18
: S1014 -1107/-1108/-1109
*
KMPDC0242EA
Parameter
Pulse width
Symbol
Tpwv
Tprv, Tpfv
Tpwh
Tprh, Tpfh
-
Tpws
Tprs, Tpfs
-
Tpwr
Tprr, Tpfr
Tovr
Remark
Min.
6
20
1000
10
40
1000
10
40
100
5
1
Typ.
8
-
Max.
-
-
-
-
60
-
-
60
-
-
Unit
µs
ns
ns
ns
%
ns
ns
%
13
P1V, P2V, TG
P1H, P2H
*
Rise and fall time
Pulse width
Rise and fall time
Duty ratio
Pulse width
Rise and fall time
Duty ratio
Pulse width
Rise and fall time
Overlap time
2000
13
*
-
50
2000
-
50
1000
-
SG
-
ns
ns
µs
RG
-
-
TG – P1H
2
-
*13: The clock pulses should be overlapped at 50 % of clock pulse amplitude.
4
CCD area image sensor S10140/S10141 series
Area scanning
INTEGRATION PERIOD
(Shutter must be open)
READOUT PERIOD (Shutter must be closed)
4.. 63 64← 58 + 6 (BEVEL): S1014 -1007/-1107
*
4..127 128←122 + 6 (BEVEL): S1014 -1008/-1108
*
Tpwv
4..255 256←250 + 6 (BEVEL): S1014 -1009/-1109
*
1
2
3
P1V
P2V, TG
P1H
P2H, SG
RG
OS
Tovr
P2V, TG
ENLARGED VIEW
Tpwh, Tpws
P1H
P2H, SG
RG
Tpwr
D1
OS
D2
D3
D4
S1..S512
D18
D19
D20: S1014 -1007/-1008/-1009
*
D5..D10, S1..S1024, D11..D17
: S1014 -1107/-1108/-1109
*
KMPDC0243EA
Parameter
Pulse width
Symbol
Remark
Min.
6
20
1000
10
40
1000
10
40
100
5
1
Typ.
8
-
Max.
-
-
-
-
60
-
-
60
-
-
Unit
µs
ns
ns
ns
%
ns
ns
%
Tpwv
Tprv, Tpfv
Tpwh
Tprh, Tpfh
-
Tpws
Tprs, Tpfs
-
14
P1V, P2V, TG
P1H, P2H
*
Rise and fall time
Pulse width
Rise and fall time
Duty ratio
Pulse width
Rise and fall time
Duty ratio
Pulse width
Rise and fall time
Overlap time
2000
14
*
-
50
2000
-
50
1000
-
SG
-
Tpwr
Tprr, Tpfr
Tovr
ns
ns
µs
RG
-
-
TG - P1H
2
-
*14: The clock pulses should be overlapped at 50 % of clock pulse amplitude.
5
CCD area image sensor S10140/S10141 series
ꢀꢀDimensional outlines (unit: mm)
S10140-1007/-1008/-1009
S10140-1107/-1108/-1109
WINDOW 16.3
WINDOW 28.6
ACTIVE AREA
12.29
ACTIVE AREA 24.58
2.54
44.0
2.54
34.0
1st PIN INDICATION PAD
1st PIN INDICATION PAD
PHOTOSENSITIVE SURFACE
PHOTOSENSITIVE SURFACE
(24 ×) 0.5
(24 ×) 0.5
S10140-1107: a=1.464
S10140-1108: a=3.000
S10140-1109: a=6.072
S10140-1007: a=1.464
S10140-1008: a=3.000
S10140-1009: a=6.072
KMPDA0207EA
KMPDA0208EA
S10141-1007S/-1008S/-1009S
S10141-1107S/-1108S/-1109S
WINDOW 16.3
WINDOW 28.6
ACTIVE AREA
12.29
ACTIVE AREA 24.58
2.54
44.0
2.54
34.0
52.0
42.0
60.0
50.0
PHOTOSENSITIVE SURFACE
1st PIN INDICATION PAD
1st PIN INDICATION PAD
PHOTOSENSITIVE SURFACE
TE-COOLER
TE-COOLER
(24 ×) 0.5
(24 ×) 0.5
S10141-1007S: a=1.464
S10141-1008S: a=3.000
S10141-1009S: a=6.072
S10141-1107S: a=1.464
S10141-1108S: a=3.000
S10141-1109S: a=6.072
KMPDA0209EB
KMPDA0210EB
6
CCD area image sensor S10140/S10141 series
ꢀ Pin connections
Remark
(s ta n d a rd
o p e ra tio n )
S10140 series
Function
S10141 series
Function
Pin
No.
Symbol
Symbol
1
2
3
4
5
6
RD
OS
OD
OG
SG
-
Reset drain
RD
OS
OD
OG
SG
-
Reset drain
+12 V
RL=100 kΩ
+24 V
+3 V
Sam e pulse as P2H
Output transistor source
Output transistor drain
Output gate
Output transistor source
Output transistor drain
Output gate
Summing gate
Summing gate
7
-
-
8
9
P2H
P1H
IG2H
IG1H
ISH
TG *15
P2V
P1V
-
CCD horizontal register clock-2
CCD horizontal register clock-1
Test point (horizontal input gate-2)
Test point (horizontal input gate-1)
Test point (horizontal input source)
Transfer gate
P2H
P1H
IG2H
IG1H
ISH
TG *15
P2V
P1V
Th1
Th2
P-
P+
SS
ISV
IG2V
IG1V
RG
CCD horizontal register clock-2
CCD horizontal register clock-1
Test point (horizontal input gate-2)
Test point (horizontal input gate-1)
Test point (horizontal input source)
Transfer gate
CCD vertical register clock-2
CCD vertical register clock-1
Thermistor
Thermistor
TE-cooler-
TE-cooler+
Substrate (GND)
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Connect to RD
Sam e pulse as P2V
CCD vertical register clock-2
CCD vertical register clock-1
-
-
-
SS
Substrate (GND)
GND
Connect to RD
ISV
IG2V
IG1V
RG
Test point (vertical input source)
Test point (vertical input gate-2)
Test point (vertical input gate-1)
Reset gate
Test point (vertical input source)
Test point (vertical input gate-2)
Test point (vertical input gate-1)
Reset gate
*15: Isolation gate between vertical register and horizontal register. In standard operation, TG should be applied the same pulse as
P2V.
ꢀ Specifications of built-in TE-cooler (Typ.)
Parameter
Internal resistance
Maximum current *16
Maximum voltage
Maxim um heat absorption *19
Maximum temperature
of heat radiating side
Symbol
Rint Ta=25 °C
Imax Tc *17=Th *18=25 °C
Vmax Tc *17=Th *18=25 °C
Qmax
Condition
S10141-1007S/-1008S/-1009S
S10141-1107S/-1108S/-1109S
Unit
Ω
2.5
1.5
3.8
3.4
1.2
3.0
3.6
5.1
A
V
W
-
70
70
°C
*16: Maximum current Imax:
If the current greater than this value flows into the thermoelectric cooler, the heat absorption begins to decrease due to
the Joule heat. It should be noted that this value is not the damage threshold value. To protect the thermoelectric cooler
and maintain stable operation, the supply current should be less than 60 % of this maximum current.
*17: Temperature of the cooling side of thermoelectric cooler.
*18: Temperature of the heat radiating side of thermoelectric cooler.
*19: Maximum heat absorption Qmax.
This is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the
maximum current is supplied to the unit.
S10141-1007S/-1008S/-1009S
S10141-1107S/-1108S/-1109S
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
7
30
20
10
0
7
30
20
10
0
VOLTAGE vs. CURRENT
VOLTAGE vs. CURRENT
CCD TEMPERATURE vs. CURRENT
CCD TEMPERATURE vs. CURRENT
6
5
4
3
2
1
0
6
5
4
3
2
1
0
-10
-20
-30
-40
-10
-20
-30
-40
0
0.5
1.0
1.5
2.0
0
1
2
3
4
CURRENT (A)
CURRENT (A)
KMPDB0178EA
KMPDB0179EA
7
CCD area image sensor S10140/S10141 series
Specifications of built-in temperature sensor
ꢀꢀ
A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation
between the thermistor resistance and absolute temperature is expressed by the following equation.
1 MΩ
R1 = R2 × expB (1 / T1 - 1 / T2)
where R1 is the resistance at absolute temperature T1 (K)
R2 is the resistance at absolute temperature T2 (K)
B is so-called the B constant (K)
The characteristics of the thermistor used are as follows.
R (298K) = 10 kΩ
100 kΩ
B (298K / 323K) = 3450 K
10 kΩ
220
240
260
280
300
TEMPERATURE (K)
KMPDB0111EB
ꢀꢀPrecaution for use (Electrostatic countermeasures)
ꢀ Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with
an earth ring, in order to prevent electrostatic damage due to electrical charges from friction.
ꢀ Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.
ꢀ Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to
discharge.
ꢀ Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the
amount of damage that occurs.
ꢀꢀElement cooling/heating temperature incline rate
When cooling the CCD by an externally attached cooler, set the cooler operation so that the temperature gradient (rate of
temperature change) for cooling or allowing the CCD to warm back is less than 5 K/minute.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KMPD1094E05
Oct. 2007 DN
8
相关型号：
S10141-1108
CCD Sensor, 2068 Horiz pixels, 128 Vert pixels, 12-18V, Rectangular, Through Hole Mount, CERAMIC, PGA-24
HAMAMATSU
S10141-1109
CCD Sensor, 2068 Horiz pixels, 128 Vert pixels, 12-18V, Rectangular, Through Hole Mount, CERAMIC, PGA-24
HAMAMATSU
S1015LV
Silicon Controlled Rectifier, 15A I(T)RMS, 15000mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-220AB
TECCOR
S1016N
Silicon Controlled Rectifier, 16A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, D2PAK-3
LITTELFUSE
S1016N
Silicon Controlled Rectifier, 16A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, D2PAK-3
TECCOR
S1016R
Silicon Controlled Rectifier, 16A I(T)RMS, 16000mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-220AB
TECCOR
S1016R51V
Silicon Controlled Rectifier, 16A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-220AB, TO-220AB, 3 PIN
LITTELFUSE
S1016R53V
Silicon Controlled Rectifier, 16A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-220AB, TO-220AB, 3 PIN
TECCOR
©2020 ICPDF网 联系我们和版权申明