S10226 [HAMAMATSU]
CMOS Sensor, 1024 Horiz pixels, 1024 Vert pixels, Rectangular;
| 型号： | S10226 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | CMOS Sensor, 1024 Horiz pixels, 1024 Vert pixels, Rectangular 时钟 传感器 换能器 |
| 文件： | 总5页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
I M A G E S E N S O R
CMOS linear image sensor
S10226
Small plastic package CMOS image sensor
Features
Applications
Compact and high cost-performance
Surface mount package: 2.4 × 9.1 × 1.6 t mm
Pixel pitch: 7.8 µm
Pixel height: 125 µm
Number of pixels: 1024 ch
Barcode readers
Displacement meters
Refractometers
Interferometers
Miniature spectrometers
Single 3.3 V power supply operation available
High sensitivity, low dark current, low noise
On-chip charge amplifier with excellent input/output
characteristics
Built-in timing generator allows operation with only
Start and Clock pulse inputs
Video data rate: 200 kHz Max.
Spectral response range: 400 to 1000 nm
Note: Consult with the nearest sales office if an evaluation
board is needed.
ꢀ Absolute maximum ratings (Ta=25 °C)
Parameter
Supply voltage
Symbol
Vdd
Value
Unit
V
V
V
V
-0.3 to +6
-0.3 to +6
-0.3 to +6
-0.3 to +6
-25 to +85
-25 to +85
Gain selection terminal voltage
Clock pulse voltage
Vg
V (CLK)
V (ST)
Topr
Start pulse voltage
Operating temperature *1
Storage temperature
*1: No condensation
°C
°C
Tstg
ꢀ Dimensions
Parameter
Number of pixels
Pixel pitch
Pixel height
Active area length
Value
1024
7.8
125
7.9872
Unit
-
µm
µm
mm
1
CMOS linear image sensor S10226
ꢀ Recommended terminal voltage
Parameter
Supply voltage
Symbol
Vdd
Min.
3.3
Typ.
5
Max.
5.25
Unit
V
High gain
Low gain
High
-
0
-
V
V
V
V
V
V
Gain selection
terminal voltage
Vg
Vdd-0.25
Vdd-0.25
Vdd
Vdd
0
Vdd
0
Vdd+0.25
Vdd+0.25
Clock pulse voltage
Start pulse voltage
V (CLK)
V (ST)
Low
High
Low
-
-
Vdd-0.25
-
Vdd+0.25
-
ꢀ Electrical characteristics [Ta=25 °C, Vdd=5 V, V (CLK)=V (ST)=5 V]
Parameter
Clock pulse frequency
Video data rate
Symbol
f (CLK)
VR
Min.
100
-
Typ.
-
f (CLK)/4
Max.
800
-
Unit
kHz
kHz
ꢀ Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, V (CLK)=V (ST)=5 V]
Parameter
Spectral response range
Peak sensitivity wavelength
Current consumption
Symbol
Min.
Typ.
Max.
Unit
nm
nm
mA
λ
λp
400 to 1000
-
-
-
-
-
-
-
700
5
-
-
6
3
-
-
-
-
DD
I
High gain
0.6
0.3
3.0
0.6
0.3
0.4
-
Dark output voltage *2
Saturation output voltage
Readout noise
Vd
Vsat
Nr
mV
V
Low gain
High gain
Low gain
mV rms
Offset output voltage
Vo
PRNU
V
%
Photo response non-uniformity *3 *4
*2: Storage time Ts=10 ms
-
8.5
*3: Uniformity is defined under the condition that all pixels in the device are uniformly illuminated by light which is 50 % of the
saturation exposure level and using 1022 pixels excluding both ends pixels as follows:
PRNU= ∆X/X × 100 (%)
X: Average output of 1022 pixels excluding the pixels at both ends
∆X: Difference between X and maximum or minimum output
*4: Measured with a tungsten lamp of 2856 K
ꢀꢀSpectral response (Typical example)
ꢀꢀBlock diagram
(Ta=25 ˚C)
100
CLK
ST
Trig
GND
Vdd
EOS
Vg
80
TIMING GENERATOR
60
SHIFT REGISTER
ADDRESS SWITCH
CHARGE CLAMP
Video
AMP
CIRCUIT
40
1024 1023
5
4
3
2
1
PHOTODIODE ARRAY
20
0
KMPDC0165EC
200 300 400 500 600 700 800 900 100011001200
WAVELENGTH (nm)
KMPDB0258EB
2
CMOS linear image sensor S10226
ꢀꢀConfiguration
S10226 consists of a photosensitive area made up of a 1024 pixel photodiode array, address switches for photodiode signal
readout, a shift register for controlling the address switches, a charge amplifier for integrating charging current, a timing circuit for
generating various timings, and a bias circuit. (See equivalent circuit below.)
Each address switch is comprised of an N-channel MOS transistor using the photodiode cathode as the source, the charge
amplifier input end as the drain, and the address pulse input from the shift register as the gate.
Vdd
START
TRIGGER
DIGITAL SHIFT REGISTER
END OF
SCAN
CLOCK
VIDEO
PD
GND
GAIN
KMPDC0250EA
Signal readout method
S10226 uses a charge integration method that temporarily accumulates a photoelectrically-converted charge in the junction
capacitance of each pixel. While the output in real-time readout is proportional only to the light intensity, the output in charge
integration is proportional to the product (amount of exposure) of the light intensity and integration time. So the output from charge
integration can be increased by lengthening the integration time, which makes charge integration ideal for low-light-level
detection.
Readout by charge integration
In charge integration, a photoelectrically-converted charge is temporarily accumulated in the junction capacitance of each pixel.
The integration capacitance of the charge amplifier is discharged by a reset signal from the timing generator circuit immediately
before each address switch is turned on. The charge stored in the junction capacitance of each pixel is then input to the charge
amplifier by sequentially turning on the address switch connected to each pixel. At this point, each pixel is initialized.
The output voltage *5 of the charge amplifier is then output as a positive-going integrated waveform from the Video terminal
through the CDS circuit and the next-stage buffer amplifier circuit. Finally, an EOS (End-Of-Scan) signal is output after the last
pixel signal was output.
*5: This is proportional to the amount of exposure. Output response depends on DTC (Discharge Time Constant).
ꢀꢀDark voltage output vs.
ꢀꢀCurrent consumption vs.
ꢀꢀOutput voltage vs.
temperature
temperature
ambient temperature
(Typ. Vdd=5 V, dark state)
(Typ.)
(Typ., Vdd=5 V, Integration time 10 ms)
5.0
4.5
4.0
1600
100
10
1
1400
1200
1000
800
HIGH GAIN
HIGH GAIN
HIGH GAIN
LOW GAIN
0.1
LOW GAIN
600
LOW GAIN
3.5
3.0
400
0.01
200
0
0.001
-40
-20
0
20
40
60
80
100
-50
0
50
100
-40
-20
0
20
40
60
80
100
TEMPERATURE (˚C)
AMBIENT TEMPERATURE (˚C)
TEMPERATURE (˚C)
KMPDB0259EA
KMPDB0260EA
KMPDB0267EA
3
CMOS linear image sensor S10226
ꢀꢀTiming chart
T1
CLK
ST
thw (ST), INTEGRATION TIME
Video
Trig
EOS
tr (CLK)
tf (CLK)
CLK
tpw (CLK)
tr (ST)
tf (ST)
ST
tvd
Video
KMPDC0164EB
Parameter
Start pulse high time
Start pulse rise and fall time
Clock pulse width
Clock pulse rise and fall time
Video delay time
Symbol
thw (ST)
Min.
T1 × 4102
0
Typ.
-
20
-
20
20
Max.
-
30
10
30
-
Unit
µs
ns
µs
ns
tr (ST), tf (ST)
tpw (CLK), T1
1.25
tr (CLK), tf (CLK) KMPDC0164E0B
tvd
-
ns
Note: The CLK pulse should be set from high to low just once when the ST pulse is low. The internal shift register starts
operating at this timing.
The storage time is determined by the start pulse intervals. However, since the charge storage of each pixel is carried out
between the signal readout of that pixel and the next signal readout of the same pixel, the start time of charge storage
differs depending on each pixel. In addition, the next start pulse cannot be input until signal readout from all pixels is
completed.
ꢀꢀDimensional outline (unit: mm)
ACTIVE AREA
7.9872 × 0.125
9.1
4.55 ± 0.2
1024 CH
1 CH
PHOTOSENSITIVE
SURFACE
EPOXY RESIN
Vg
GND
Trig
CLK
ST
PRINT CIRCUIT BOARD
EOS
Vdd
Video
1.9
3.4
1.9
Tolerance unless
otherwise noted: ±0.1
ELECTRODES
(8 ×) 0.5
INDEX MARK
KMPDA0211EA
4
CMOS linear image sensor S10226
ꢀ Pin connection
Pin No.
ꢀ
Name
Vg
GND
Trig
Description
Input/output
Input
Input
Output
Gain selection: Low gain ꢀ Vdd or open, High gain ꢀ GND
Ground
Trigger: Timing signal output for A/D converter
Clock pulse (Pulse for synchronizing the internally generated pulses that
control sensor operation frequency)
Start pulse (Pulse for initializing the internally generated pulses that set the
timing to start reading pixel signals)
End of scan (Shift register end-of-scan signal pulse generated after reading
signals from all pixels)
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
CLK
ST
Input
Input
EOS
Output
ꢀ
ꢀ
Vdd
Video
Power supply voltage
Video signal output
Input
Output
ꢀꢀRecommended land pattern
ꢀꢀTemperature profile of reflow soldering
250
(8 ×) 0.7
200
150
1.9
3.4
1.9
100
KMPDC0248EB
50
0
0
50
100
150
200
250
300
350
TIME (s)
KMPDB0261EA
ꢀꢀPrecautions for use
(1) Electrostatic countermeasures
· This device has a built-in protection circuit as a safeguard against static electrical charges. However, to prevent destroying
the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent
static discharges.
· Protect this device from surge voltages which might be caused by peripheral equipment.
(2) Package handling
· The package surface is easily scratched, so handle this device carefully.
· Dust or grime on the light input window might cause non-uniform sensitivity. To remove dust or grime, blow it off with
compressed air.
(3) Reflow soldering
· To prevent damaging this device during reflow soldering, perform soldering within 24 hours after opening the moisture-proof
packing.
· The extent of damage that might occur during reflow soldering depends on the PC board size and reflow oven conditions.
Check the device for any damage before reflow soldering.
(4) Surface protective tape
· Protective tape is affixed to the surface of this product to protect the active area. After assembling the product, remove the
tape before use.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2008 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KMPD1097E07
Oct. 2008 DN
5
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