S12071_技术文档

CCD area image sensor

S12071

High sensitivity in UV region,

anti-blooming function included

The S12071 CCD area image sensor has a back-thinned structure that enables a high sensitivity in the UV to visible region

as well as a wide dynamic range, low dark current, and an anti-blooming function.

A dedicated driver circuit C12081 series (with Camera Link and USB 2.0 interfaces) is also provided (sold separately).

Features

Applications

High sensitivity in UV region

One-stage TE-cooled type

Low dark current

ICP spectrophotometry

Scientiﬁc measuring instrument

UV imaging

Anti-blooming function included

Selectable readout port to match your application

tap A: low noise ampliﬁer (1 MHz max.)

tap B: high-speed ampliﬁer (10 MHz max.)

Number of effective pixels: 1024 × 1024

Structure

Parameter

Image size (H × V)

Pixel size (H × V)

Speciﬁcation

24.576 × 24.576 mm

24 × 24 μm

Number of total pixels (H × V)

Number of effective pixels (H × V)

Vertical clock phase

1056 × 1032

1024 × 1024

2 phases

Horizontal clock phase

2 phases

Tap A

Tap B

One-stage MOSFET source follower

Three-stage MOSFET source follower

40-pin ceramic DIP

Quartz

Output circuit

Package

Window

Cooling

One-stage TE-cooled

1

www.hamamatsu.com

CCD area image sensor

S12071

Absolute maximum ratings (Ta=25 °C)

Parameter

Operating temperature*¹*²

Storage temperature*²

Symbol

Topr

Tstg

VODA

VODB

Min.

-50

-0.5

-15

Typ.

Max.

+50

+70

+30

+25

+18

+15

Unit

°C

-

Output transistor drain voltage

V

Reset drain voltage

VRDA, VRDB

Vret

V

Output amplifier return voltage

Overflow drain voltage

Dump drain voltage

Vertical input source voltage

Overflow gate voltage

Dump gate voltage

Vertical input gate voltage

Summing gate voltage

Output gate voltage

VOFD

VDD

VISV

VOFG

VDG

VIGV

VSGA, VSGB

VOGA, VOGB

VRGA, VRGB

VTG

Reset gate voltage

Transfer gate voltage

Vertical shift register clock voltage

VP1V, VP2V

VP1H, VP2H

VP3H, VP4H

Imax

Vmax

Horizontal shift register clock voltage

-15

-

+15

V

Maximum current of built-in TE-cooler*³

Maximum voltage of built-in TE-cooler

-

4.0

3.4

A

V

*1: Chip temperature

*2: No condensation

*3: If the current greater than this value ﬂows into the thermoelectric cooler, the heat absorption begins to decrease due to the Joule

heat. It should be noted that this value is not the damage threshold value. To protect the thermoelectric cooler and maintain stable

operation, the supply current should be less than 60% of this maximum current.

Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product

within the absolute maximum ratings.

When there is a temperature difference between a product and the ambient in high humidity environment, dew condensation may

occur on the product surface. Dew condensation on the product may cause a deterioration of characteristics and reliability.

2

CCD area image sensor

S12071

Operating conditions (Ta=25 °C)

Parameter

Symbol

VODA

VODB

VRDA, VRDB

Vret

Min.

23

11

14

-

11

-

-10

7

-8

5

6

-8

4

-10

4

-10

Typ.

24

12

15

1

12

VRD

-9

8

-7

6

7

-7

5

-9

5

Max.

25

13

16

2

13

-

-8

9

-6

7

8

-6

6

-8

6

-8

Unit

V

Output transistor drain voltage

Reset drain voltage

V

Output ampliﬁer return voltage*⁴

Overﬂow drain voltage

Dump drain voltage

VOFD

VDD

VISV

VIGV

VOFG

VDG

Vertical input source

Vertical input gate

Overﬂow gate voltage

Dump gate voltage

Test point

V

High

Low

VSGAH, VSGBH

VSGAL, VSGBL

VOGA, VOGB

VRGAH,VRGBH

VRGAL, VRGBL

VTGH

VTGL

VP1VH, VP2VH

VP1VL, VP2VL

Summing gate voltage

Output gate voltage

Reset gate voltage

V

High

Low

High

Low

High

Low

Transfer gate voltage

V

Vertical shift register clock voltage

-9

VP1HH, VP2HH

VP3HH, VP4HH

VP1HL, VP2HL

VP3HL, VP4HL

High

Low

7

8

9

Horizontal shift register clock

voltage

V

-8

-7

-6

Substrate voltage

VSS

RLA

RLB

-

8

2.0

0

10

2.2

-

24

2.4

V

External load resistance

kꢀ

*4: Output amplifier return voltage is a positive voltage with respect to Substrate voltage, but the current flows in the direction of flow

out of the sensor.

Electrical characteristics (Ta=25 °C, unless otherwise noted, operating condition: Typ.)

Parameter

Symbol

fca

fcb

Min.

Typ.

0.1

2

Max.

Unit

MHz

pF

Tap A

Tap B

-

1

10

-

Signal output frequency*⁵

Vertical shift register capacitance

CP1V, CP2V

15500

CP1H, CP2H

CP3H, CP4H

Horizontal shift register capacitance

-

100

-

pF

Summing gate capacitance

Reset gate capacitance

Transfer gate capacitance

Charge transfer efficiency*⁶

CSGA, CSGB

CRGA, CRGB

CTG

-

15

160

0.99999

16

-

3

pF

-

CTE

0.99995

Tap A

-

DC output level*⁵

Vout

Zo

V

Ω

Tap B

Tap A

Tap B

Tap A

Tap B

Tap A

Tap B

8

3500

170

2

6

45

Output impedance*⁵

Output MOSFET supply

current/node*⁵

Ido

P

mA

mW

9

65

100

Power consumption*⁵*⁷

70

*5: Tap A: VODA=24 V, RLA=10 kW, Tap B: VODB=12 V, RLB=2.2 kꢀ

*6: Charge transfer efficiency per pixel, measured at half of the full well capacity

*7: Power consumption of the on-chip amplifier plus load resistance

3

CCD area image sensor

S12071

Electrical and optical characteristics (Ta=25 °C, unless otherwise noted, operating condition: Typ.)

Parameter

Saturation output voltage

Full well capacity

Symbol

Vsat

Fw

Min.

-

280

Typ.

Fw × Sv

350

Max.

-

Unit

V

ke^-

Tap A

Tap B

Td=25 °C

Td=0 °C

Tap A

Tap B

Tap A

Tap B

4

4.5

-

5

5.5

100

7

9

50

38888

7000

6

CCD node sensitivity*⁸

Sv

DS

Nr

μV/e^-

e^-/pixel/s

e^-rms

6.5

1000

70

18

100

-

Dark current*⁹

Readout noise*⁸*¹⁰

15555

2800

-

11

Dynamic range*¹⁰

*

DR

-

Photoresponse nonuniformity*¹²

Spectral response range

Anti-blooming

PRNU

λ

AB

-

±3

±10

-

3

10

3

%

nm

-

165 to 1100

Fw × 100

-

White spots

Black spots

-

Point defect*¹³

Blemish

-

Cluster defect*¹⁴

Column defect*¹⁵

-

0

*8: Tap A: VODA=24 V, RLA=10 kꢀ, Tap B: VODB=12 V, RLB=2.2 kꢀ

*9: Dark current is reduced to half for every 5 to 7 °C decrease in temperature.

*10: Signal output frequency=100 kHz (Tap A), 2 MHz (Tap B)

*11: Dynamic range=Full well capacity/Readout noise

*12: Measured at one-half of the saturation output (full well capacity), using LED light (peak emission wavelength: 660 nm)

Fixed pattern noise (peak to peak)

Photoresponse nonuniformity =

× 100 [%]

Signal

*13: White spots=Pixels whose dark current is higher than 1 ke^-after one-second integration at 0 °C

Black spots=Pixels whose sensitivity is lower than one-half of the average pixel output (measured with uniform light producing

one-half of the saturation charge)

*14: 2 to 9 contiguous defective pixels

*15: 10 or more contiguous defective pixels

Spectral response (without window)*¹⁶

(Typ. Ta=25 °C)

120

110

100

90

80

70

60

50

40

30

20

10

0

200

300

400

500

600

700

800

900 1000 1100

Wavelength (nm)

KMPDB0373EB

*16: Spectral response is decreased according to the spectral transmittance characteristics of window material.

4

CCD area image sensor

S12071

Spectral transmittance characteristics of window material

Dark current vs. temperature

(Typ.)

(Typ. Ta=25 °C)

1000

100

10

80

60

40

20

1

0.1

0.01

0

-50

-40 -30

-20 -10

0

10

20

30

200 300 400 500 600 700 800 900 1000

Wavelength (nm)

Temperature (°C)

KMPDB0303EA

KMPDB0370EA

Device structure (conceptual drawing of top view)

Effective pixels

Thinning

Effective pixels

38

33

32

29

28

25

24

23

V

Horizontal

shift register

4

3

2

1

2

3

4

5

H

1

2

20

19

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

Tap A

Tap B

1024 signal out

Horizontal shift register

8 blank pixels

8-bevel

Note: When viewed from the direction of the incident light, the horizontal shift register is covered with a thick silicon layer

(dead layer). However, long-wavelength light passes through the silicon dead layer and may possibly be detected by

the horizontal shift register. To prevent this, provide light shield on that area as needed.

KMPDC0423EA

5

CCD area image sensor

S12071

Timing chart

Area scanning (Tap A: low speed)

Integration period

(external shutter has to be open)

Readout period (external shutter has to be closed)

SGB

RGB

Tpwv

4..1031 1032←4 (bevel) + 1024 + 4 (bevel)

1

2

3

P1V

P2V, TG

P1H, P2H

P3H, P4H, SGA

RGA

OSA

Tpfv

Tprv

Tovr

P2V, TG

Enlarged view

Tpwh, Tpws

Tprh

Tpfh

P1H, P2H

Tprh, Tprs

Tprr

Tpfh, Tpfs

Tpfr

P3H, P4H, SGA

Tpwr

D1

RGA

OSA

D2

D3

D4

D30

D31

D32

KMPDC042

D5..D16, S1..S1024, D17..D29

KMPDC0424EA

Parameter

Pulse width

Symbol

Min.

60

10

500

10

40

500

10

40

10

5

Typ.

75

Max.

-

60

-

60

-

Unit

μs

ns

%

ns

%

ns

μs

Tpwv

Tprv, Tpfv

Tpwh

Tprh, Tpfh

-

Tpws

Tprs, Tpfs

-

P1V, P2V, TG*¹⁷

Rise and fall times

Pulse width

Rise and fall times

Duty ratio

Pulse width

Rise and fall times

Duty ratio

Pulse width

Rise and fall times

Overlap time

-

5000

-

50

5000

-

50

500

-

P1H, P2H, P3H, P4H*¹⁷

SGA

Tpwr

Tprr, Tpfr

Tovr

RGA

TG – P1H, P2H

3

-

*17: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude.

6

CCD area image sensor

S12071

Area scanning (Tap B: high speed)

Integration period

(external shutter has to be open)

Readout period (external shutter has to be closed)

SGA

RGA

Tpwv

4..1031 1032←4 (bevel) + 1024 + 4 (bevel)

1

2

3

P1V

P2V, TG

P1H, P4H

P2H, P3H, SGB

RGB

OSB

Tpfv

Tovr

P2V, TG

Tprv

Enlarged view

Tpwh, Tpws

Tprh

Tpfh

P1H, P4H

Tprh, Tprs

Tprr

Tpfh, Tpfs

Tpfr

P2H, P3H, SGB

Tpwr

D1

RGB

OSB

D2

D3

D4

D30

D31

D32

D5..D16, S1..S1024, D17..D29

KMPDC0425

KMPDC0425EA

Parameter

Pulse width

Symbol

Min.

60

10

50

10

40

50

10

40

5

Typ.

75

-

250

-

50

250

-

Max.

-

60

-

60

-

Unit

μs

ns

%

ns

%

ns

μs

Tpwv

Tprv, Tpfv

Tpwh

Tprh, Tpfh

-

Tpws

Tprs, Tpfs

-

P1V, P2V, TG*¹⁸

Rise and fall times

Pulse width

Rise and fall times

Duty ratio

Pulse width

Rise and fall times

Duty ratio

Pulse width

Rise and fall times

Overlap time

P1H, P2H, P3H, P4H*¹⁸

SGB

50

25

-

Tpwr

Tprr, Tpfr

Tovr

RGB

5

3

TG – P1H, P4H

-

*18: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude.

7

CCD area image sensor

S12071

Dimensional outline (unit: mm)

Window 32.8 0.13

29.3 0.13

Photosensitive area

24.576

40

21

1

20

48.26 0.3

52.5 0.53

60.5 0.2

64.5 0.3

Aluminum frame

1st pin indication mark

surface*¹

Upper surface of window

Photosensitive surface*²

TE-cooler

0.5 0.07

2.54 0.13

*1: Never push the aluminum frame when inserting the sensor into the

printed circuit board or the like. Pressing the aluminum frame may

cause the window material to peel off and air tightness to be compro-

mised. When inserting the sensor, hold its sides. The sensor can also

be inserted by pushing the screw fixing parts at the ends of the pack-

age, but do not push with excessive force as they may break.

*2: There is a deflection in the photosensitive area [PV (peak to valley)

value: approx. 80 to 160 μm].

*3: Window thickness

KMPDA0296EC

8

CCD area image sensor

S12071

Pin connections

Pin no.

1

Symbol

SS

Function

Remark (standard operation)

Substrate

0 V

2

3

4

5

OSA

RDA

ODA

OGA

DD

Output transistor source-A

Reset drain-A

Output transistor drain-A

Output gate-A

RL=10 kꢀ

+15 V

+24 V

+6 V

+12 V

6

Dump drain

7

8

9

RGA

SGA

P4H

P3H

P2H

P1H

SGB

RGB

DG

OGB

ODB

RDB

OSB

Vret

P-

Reset gate-A

Summing gate-A

+7 V/-7 V

+8 V/-7 V

+7 V/-7 V

-9 V

+6 V

+12 V

+15 V

RL=2.2 kꢀ

+1 V

Horizontal shift register clock-4

Horizontal shift register clock-3

Horizontal shift register clock-2

Horizontal shift register clock-1

Summing gate-B

Reset gate-B

Dump gate

Output gate-B

Output transistor drain-B

Reset drain-B

Output transistor source-B

Output amplifier return voltage

TE-cooler (-)

Transfer gate

Vertical shift register clock-2

Vertical shift register clock-1

No connection

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

36

37

38

39

40

P-

TG

P2V

P1V

NC

+5 V/-9 V

NC

No connection

IGV

ISV

TH

Test point (vertical input gate)

Test point (vertical input source)

Thermistor

Overflow drain

Overflow gate

No connection

Substrate

TE-cooler (+)

-9 V

Connect to RD

TH

OFD

OFG

NC

SS

P+

+12 V

-9 V

0 V

9

CCD area image sensor

S12071

Speciﬁcations of built-in TE-cooler (Typ. vacuum condition)

Parameter

Internal resistance

Maximum heat absorption of built-in TE-cooler

Symbol

Rint Ta=25 °C

Qmax

Condition

Speciﬁcation

0.65 ± 0.13

9.9

Unit

ꢀ

W

19 20

*

*19: This is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the maximum

current is supplied to the sensor.

*20: Heat absorption at Tc=Th

Tc: Temperature on the cooling side of TE-cooler

Th: Temperature on the heat dissipating side of TE-cooler.

(Typ. Th=25 °C)

6

5

4

3

2

30

20

10

0

Voltage vs. current

CCD temperature vs.current

-10

-20

-30

1

0

1

2

3

4

5

Current (A)

KMPDB0371EA

To make the cooling side 0 °C, the temperature on the heat dissipating side must be 30 °C or less. As a guideline, use a heatsink

whose thermal resistance is no more than 1 °C/W.

Specifications of built-in temperature sensor

A thermistor chip is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation

between the thermistor resistance and absolute temperature is expressed by the following equation.

(Typ. Ta=25 °C)

1 MΩ

RT1 = RT2 × exp BT1/T2 (1/T1 - 1/T2)

RT1: Resistance at absolute temperature T1 [K]

RT2: Resistance at absolute temperature T2 [K]

BT1/T2: B constant [K]

The characteristics of the thermistor used are as follows.

R298=10 kꢀ

B298/323=3450 K

100 kΩ

10 kΩ

220

240

260

280

300

Temperature (K)

KMPDB0111JB

10

CCD area image sensor

S12071

Precautions (electrostatic countermeasures)

Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an

earth ring, in order to prevent electrostatic damage due to electrical charges from friction.

·

Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.

Provide ground lines or ground connection with the work-ﬂoor, work-desk and work-bench to allow static electricity to discharge.

Ground the tools used to handle these sensors, such as tweezers and soldering irons.

·

It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the

amount of damage that occurs.

Element cooling/heating temperature incline rate

When cooling the CCD by an externally attached cooler, set the cooler operation so that the temperature gradient (rate of tempera-

ture change) for cooling or allowing the CCD to warm back is less than 5 K/minute.

Related information

www.hamamatsu.com/sp/ssd/doc_en.html

Precautions

Notice

·

Image sensor/Precautions

DEVELOPMENTAL

Multichannel detector head C12081/C12081-01

Specifications

Parameter

Speciﬁcation

Tap A

Tap B

Tap A

Tap B

Tap A

Tap B

100 kHz

2 MHz

0.09 frames/s

1.42 frames/s

30000

Data rate

Frame rate (max.)

Dynamic range

5000

Cooling temperature*²¹

Supply voltage

A/D resolution

Interface

-10 to +10 °C

+5 V, ±15 V

16-bit

Camra Link Base, USB 2.0

Dimensions

90 100 79.6 mm

×

Weight

1.2 kg

*21: Cooling temperature depends on the circulating water temperature

(C12081) and the ambient temperature (C12081-01).

Information described in this material is current as of December, 2014.

Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the

information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always

contact us for the delivery specification sheet to check the latest specifications.

The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that

one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.

Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

www.hamamatsu.com

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741

China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866

11

Cat. No. KMPD1138E03 Dec. 2014 DN


型号：	S12071
厂家：	HAMAMATSU CORPORATION
描述：	CCD Sensor, 1056 Horiz pixels, 1032 Vert pixels, Rectangular, Through Hole Mount, DIP-40 CD 输出元件传感器换能器
文件：	总11页 (文件大小：876K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

S12071 [HAMAMATSU]

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