S1227_15 [HAMAMATSU]
Si photodiodes;
| 型号： | S1227_15 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | Si photodiodes |
| 文件： | 总5页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si photodiodes
S1227 series
For UV to visible, precision photometry;
suppressed IR sensitivity
These Si photodiodes have suppressed IR sensitivity. They are suitable for low-light-level detection in analysis and the like.
Features
Applications
High UV sensitivity (quartz window type): QE 75 % (λ=200 nm)
Suppressed IR sensitivity
Analytical equipment
Optical measurement equipment, etc.
Low dark current
Structure / Absolute maximum ratings
Absolute maximum ratings
Effective
photosensitive
area
Photosensitive
Reverse
voltage
VR max
(V)
Operating
temperature
Topr
Storage
temperature
Tstg
Package
Window
material
area size
Type no.
(mm)
(mm)
(mm2)
5.9
(°C)
(°C)
S1227-16BQ*
S1227-16BR
S1227-33BQ*
S1227-33BR
S1227-66BQ*
S1227-66BR
S1227-1010BQ*
Quatz
Resin potting
Quatz
Resin potting
Quatz
2.7 × 15
1.1 × 5.9
6 × 7.6
8.9 × 10.1
15 × 16.5
2.4 × 2.4
5.8 × 5.8
10 × 10
5.7
33
5
-20 to +60
-20 to +80
Resin potting
Quatz
100
S1227-1010BR Resin potting
* Refer to “Precautions against UV light exposure.”
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Short circuit
current
Isc
Dark
current
ID
VR=10 mV
Max.
Rise
time
tr
Terminal
capacitance resistance
Ct
VR=0 V
Shunt
Photosensitivity
Spectral
response sensitivity
range wavelength
Peak
Noise
equivalent
power
S
Temp.
coefficient
TCID
Rsh
VR=10 mV
(GΩ)
(A/W)
100 lx
VR=0 V
Type no.
λ
λp
NEP
He-Ne
RL=1 kΩ f=10 kHz
Min. Typ.
200 nm
Laser
633
nm
λp
Min. Typ.
Min. Typ.
(nm)
(nm)
(μA) (μA) (pA)
(times/°C)
(μs)
(pF)
170
(W/Hz1/2
)
S1227-16BQ
S1227-16BR
S1227-33BQ
S1227-33BR
S1227-66BQ
S1227-66BR
190 to 1000
340 to 1000
190 to 1000
340 to 1000
190 to 1000
340 to 1000
0.36 0.10 0.12 0.34 2.0 3.2
0.43 0.39 2.2 3.7
0.36 0.10 0.12 0.34 2.0 3.0
0.43 0.39 2.2 3.7
0.36 0.10 0.12 0.34 11
0.43 0.39 13
0.36 0.10 0.12 0.34 32
0.43 0.39 36
2.5 × 10-15
2.1 × 10-15
2.5 × 10-15
2.1 × 10-15
5.0 × 10-15
4.2 × 10-15
8.0 × 10-15
6.7 × 10-15
5
5
0.5
2
20
20
5
-
-
0.5
2
160
950
2
-
-
720
1.12
16
19
44
53
20
50
0.5
0.2
-
-
S1227-1010BQ 190 to 1000
S1227-1010BR 340 to 1000
7
3000
2
-
-
1
www.hamamatsu.com
Si photodiodes
S1227 series
Spectral response
S1227-BQ series
S1227-BR series
(Typ. Ta=25 °C)
(Typ. Ta=25 °C)
0.7
0.6
0.5
0.4
0.3
0.2
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
0
190
400
600
800
1000
190
400
600
800
1000
Wavelength (nm)
Wavelength (nm)
KSPDB0094EC
KSPDB0307EA
Photosensitivity temperature characteristics
Dark current vs. reverse voltage
(Typ. Ta=25 °C)
(Typ. )
1 nA
100 pA
10 pA
1 pA
+1.5
S1227-1010BQ/BR
+1.0
+0.5
S1227-66BQ/BR
0
S1227-33BQ/BR
1
S1227-16BQ/BR
0.1
100 fA
-0.5
0.01
10
190
400
600
800
1000
Reverse voltage (V)
Wavelength (nm)
KSPDB0030EB
KSPDB0096EB
2
Si photodiodes
S1227 series
Dimensional outlines (unit: mm)
S1227-16BQ
S1227-16BR
Hole
(2 ×) 0.8
Hole
(2 ×) 0.8
Photosensitive
area
1.1 × 5.9
Photosensitive
area
1.1 × 5.9
Photosensitive
surface
15 0.15
13.5 0.13
12.2
Quartz window
Photosensitive
surface
15 0.15
Resin
13.5 0.13
0.5
Lead
0.5
Lead
Anode terminal mark
Anode terminal mark
8.5 0.2
8.5 0.2
The resin potting may extend a
maximum of 0.1 mm above the
upper surface of the package.
KSPDA0095EB
KSPDA0094EB
S1227-33BQ
S1227-33BR
7.6 0.1
Photosensitive
area
2.4 × 2.4
7.6 0.1
Photosensitive
area
2.4 × 2.4
Quartz window
Photosensitive surface
Photosensitive
surface
Resin
0.5
Lead
0.5
Lead
6.6 0.3
6.6 0.3
4.5 0.2
Anode
terminal mark
4.5 0.2
Anode
terminal mark
The resin potting may extend a
maximum of 0.1 mm above the
upper surface of the package.
KSPDA0096EB
KSPDA0097EB
3
Si photodiodes
S1227 series
S1227-66BQ
S1227-66BR
10.1 0.1
10.1 0.1
Photosensitive
area
5.8 × 5.8
Photosensitive
area
5.8 × 5.8
Photosensitive
surface
Photosensitive
surface
Quartz window
Resin
0.5
Lead
0.5
Lead
9.2 0.3
7.4 0.2
9.2 0.3
7.4 0.2
Anode
terminal mark
Anode
terminal mark
The resin potting may extend a
maximum of 0.1 mm above the
upper surface of the package.
KSPDA0098EB
KSPDA0099EB
S1227-1010BQ
S1227-1010BR
Photosensitive 16.5 0.2
area
10 × 10
16.5 0.2
Photosensitive
area
10 × 10
Photosensitive
surface
Photosensitive
Quartz window
surface
Resin
0.5
Lead
0.5
Lead
15.1 0.3
12.5 0.2
15.1 0.3
12.5 0.2
Anode
Anode
terminal mark
terminal mark
The resin potting may extend a
maximum of 0.1 mm above the
upper surface of the package.
KSPDA0100EB
KSPDA0101EB
4
Si photodiodes
S1227 series
Precautions against UV light exposure
∙ When UV light irradiation is applied, the product characteristics may degrade. Such examples include degradation of the product’s UV
sensitivity and increase in dark current. This phenomenon varies depending on the irradiation level, irradiation intensity, usage time,
and ambient environment and also varies depending on the product model. Before employing the product, we recommend that you
check the tolerance under the ultraviolet light environment that the product will be used in.
∙ Exposure to UV light may cause the characteristics to degrade due to gas released from the resin bonding the product’s component
materials. As such, we recommend that you avoid applying UV light directly on the resin and apply it on only the inside of the
photosensitive area by using an aperture or the like.
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Disclaimer
∙ Metal, ceramic, plastic package products
Technical information
∙ Si photodiode/Application circuit examples
Information described in this material is current as of October, 2015.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
5
Cat. No. KSPD1036E07 Oct. 2015 DN
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