S2386_15 [HAMAMATSU]

Si photodiodes;
S2386_15
型号: S2386_15
厂家: HAMAMATSU CORPORATION    HAMAMATSU CORPORATION
描述:

Si photodiodes

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Si photodiodes  
S2386 series  
For visible to near IR, general-purpose photometry  
Features  
Applications  
High sensitivity in visible to near infrared range  
Low dark current  
Analytical instruments  
Optical measurement equipment  
High reliability  
Superior linearity  
Structure / Absolute maximum ratings  
Absolute maximum ratings  
Photosensitive  
area size  
Dimensional  
outline/  
Window material*  
Operating  
temperature  
Topr  
Storage  
temperature  
Tstg  
Reverse voltage  
VR max  
Package  
TO-18  
Type no.  
(mm)  
(V)  
(°C)  
(°C)  
S2386-18K  
S2386-18L  
S2386-5K  
S2386-44K  
S2386-45K  
S2386-8K  
(1)/K  
(2)/L  
(3)/K  
(4)/K  
(5)/K  
(6)/K  
1.1 × 1.1  
2.4 × 2.4  
3.6 × 3.6  
3.9 × 4.6  
5.8 × 5.8  
30  
-40 to +100  
-55 to +125  
TO-5  
TO-8  
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product  
within the absolute maximum ratings.  
* Window material K=borosilicate glass, L=lens type borosilicate glass  
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)  
Photosensitivity  
Dark  
Noise  
equivalent  
power  
Short  
circuit  
current  
Isc  
Terminal  
capacitance  
Ct  
VR=0 V  
f=10 kHz  
Spectral  
response sensitivity  
range wavelength  
Peak  
S
current Temp. Rise time  
ID  
VR=  
10 mV  
max.  
Shunt  
resistance  
Rsh  
(A/W)  
coefcient  
of ID  
TCID  
tr  
VR=0 V  
RL=1 kΩ  
NEP  
Type no.  
GaP He-Ne GaAs  
LED laser LED  
560 633 930  
nm nm nm  
λ
λp  
VR=10 mV VR=0 V  
100 lx  
λ=λp  
λp  
Min. Typ.  
Min. Typ.  
(nm)  
(nm)  
(μA) (μA) (pA) (times/°C)  
(μs)  
(pF)  
140  
(GΩ) (GΩ) (W/Hz1/2  
)
S2386-18K  
S2386-18L  
S2386-5K  
S2386-44K  
S2386-45K  
S2386-8K  
1
4
1.3  
5.7  
2
0.4  
5
100 6.8 × 10-16  
4.4 6.0  
9.6 12  
12 17  
26 33  
5
1.8  
3.6  
5.5  
10  
730  
2
0.5  
0.3  
50 9.6 × 10-16  
25 1.4 × 10-15  
320 to  
1100  
960  
0.6 0.38 0.43 0.59  
1.12  
20  
30  
50  
1600  
2300  
4300  
0.2 10 2.1 × 10-15  
1
www.hamamatsu.com  
Si photodiodes  
S2386 series  
Photosensitivity temperature characteristic  
Spectral response  
(Typ. Ta=25 °C)  
(Typ.)  
+1.5  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
+1.0  
+0.5  
0
0.1  
0
-0.5  
300 400 500 600 700 800 900 1000 1100  
300 400 500 600 700 800 900 1000 1100  
Wavelength (nm)  
Wavelength (nm)  
KSPDB0110EB  
KSPDB0058EC  
Dark current vs. reverse voltage  
Directivity  
(Typ. Ta=25 °C)  
10° 20°  
20°  
10°  
0°  
(Typ. Ta=25 °C)  
1 nA  
100%  
30°  
30°  
S2386-8K  
100 pA  
10 pA  
1 pA  
80%  
60%  
40°  
50°  
40°  
50°  
S2386-18L  
40%  
20%  
60°  
70°  
60°  
70°  
100 fA  
10 fA  
S2386-18K  
S2386-18K/-5K/-44K/-45K  
80°  
90°  
80°  
90°  
0.01  
0.1  
1
10  
100  
Reverse voltage (V)  
Relative sensitivity  
KSPDB0113ED  
KSPDB0111EA  
2
Si photodiodes  
S2386 series  
Dimensional outlines (unit: mm)  
(1) S2386-18K  
(2) S2386-18L  
Y
Y
X
X
Active area  
1.1 × 1.1  
Photosensitive area  
1.1 × 1.1  
Glass  
Glass  
Photosensitive surface  
Photosensitive surface  
0.45  
Lead  
ġġġıįĵĶ  
Lead  
2.54 0.2  
2.54 0.2  
Distance from photosensitive  
area center to cap center  
-0.3≤X≤+0.3  
-0.3≤Y≤+0.3  
Connected to case  
The glass window may extend  
a maximum of 0.2 mm above  
the upper surface of the cap.  
Connected to case  
Distance from photosensitive  
area center to cap center  
-0.3≤X≤+0.3  
-0.3≤Y≤+0.3  
KSPDA0191EC  
KSPDA0048EE  
(3) S2386-5K  
(4) S2386-44K  
Y
Y
X
X
Photosensitive area  
2.4 × 2.4  
Photosensitive area  
3.6 × 3.6  
0.3  
Glass  
Glass  
Photosensitive surface  
Photosensitive surface  
0.45  
Lead  
0.45  
Lead  
5.08 0.2  
5.08 0.2  
Distance from photosensitive  
area center to cap center  
-0.3≤X≤+0.3  
Distance from photosensitive  
area center to cap center  
-0.6≤X≤0  
-0.3≤Y≤+0.3  
-0.3≤Y≤+0.3  
Connected to case  
Connected to case  
The glass window may extend  
a maximum of 0.2 mm above  
the upper surface of the cap.  
The glass window may extend  
a maximum of 0.2 mm above  
the upper surface of the cap.  
KSPDA0192EC  
KSPDA0193EC  
3
Si photodiodes  
S2386 series  
(5) S2386-45K  
(6) S2386-8K  
Y
Y
X
X
Photosensitive area  
5.8 × 5.8  
Photosensitive area  
3.9 × 4.6  
0.085  
0.4  
Glass  
Glass  
Photosensitive surface  
Photosensitive surface  
0.45  
Lead  
0.45  
Lead  
5.08 0.2  
7.5 0.2  
Index mark ( 1.4)  
Distance from photosensitive  
area center to cap center  
-0.7≤X≤+0.1  
-0.3≤Y≤+0.3  
Distance from photosensitive  
area center to cap center  
-0.315≤X≤+0.485  
Connected to case  
The glass window may extend  
a maximum of 0.2 mm above  
the upper surface of the cap.  
-0.4≤Y≤+0.4  
Connected to case  
The glass window may extend  
a maximum of 0.2 mm above  
the upper surface of the cap.  
KSPDA0178ED  
KSPDA0194EC  
Information described in this material is current as of November, 2013.  
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the  
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always  
contact us for the delivery specification sheet to check the latest specifications.  
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that  
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product  
use.  
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.  
www.hamamatsu.com  
HAMAMATSU PHOTONICS K.K., Solid State Division  
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184  
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218  
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8  
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10  
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777  
North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01  
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741  
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866  
4
Cat. No. KSPD1035E07 Nov. 2013 DN  

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