S4315-04 [HAMAMATSU]
Avalanche Photodiode, TO-8, 6 PIN;
| 型号： | S4315-04 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | Avalanche Photodiode, TO-8, 6 PIN |
| 文件： | 总4页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P H O T O D I O D E
Si APD
,
,
,
S2381 to S2385 S5139 S8611 S3884, S4315 series
Low bias operation, for 800 nm band
Features
Applications
Stable operation at low bias
High-speed response
Spatial light transmission
Rangefinder
High sensitivity and low noise
ꢀꢀ General ratings / Absolute maximum ratings
Absolute maximum ratings
Dimensional
outline/
Active area *2
Effective active
area
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Package
size
Window
material *1
(mm)
φ0.2
(mm2)
0.03
(°C)
(°C)
S2381
S2382
S5139
S8611
S2383
S2383-10 *3
S3884
S2384
S2385
ꢀ/K
ꢀ/L
ꢀ/L
φ0.5
0.19
TO-18
-20 to +85
-55 to +125
ꢀ/K
φ1.0
0.78
ꢀ/K
ꢀ/K
ꢀ/K
φ1.5
φ3.0
φ5.0
1.77
7.0
19.6
TO-5
TO-8
ꢀꢀ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Breakdown
voltage
VBR
Photo
sensitivity efficiency
Quantum
Excess
4
4
Peak
Dark
Cut-off *
Spectral
response
range
λ
*
Temp.
4
Terminal
*
Noise
figure *4
x
Gain
M
λ=800 nm
sensitivity
wavelength
λp
coefficient current *4 frequency
capacitance
S
M=1
QE
M=1
D
I
of
fc
RL=50
D
I =100 µA
Ct
Type No.
V
BR
Ω
λ=800 nm λ=800 nm
λ=800 nm
Typ. Max.
(V) (V)
Typ. Max.
(V/°C) (nA) (nA) (MHz)
(nm)
(nm)
800
(A/W)
0.5
(%)
75
(pF)
1.5
S2381
S2382
S5139
S8611
S2383
S2383-10 *3
S3884
S2384
S2385
0.05 0.5
1000
0.1
1
2
900
3
100
400 to 1000
150 200
0.65
0.3
0.2
600
6
0.5
1
3
5
10
30
400
120
40
10
40
95
60
40
*1: Window material K: borosilicate glass, L: lens type borosilicate glass
*2: Active area in which a typical gain can be obtained
*3: This is a variant of S2383 in which the device chip is light-shielded by aluminum coating except for the active area
*4: Measured under conditions that the device is operated at the gain listed in the specification table
Note) The following different breakdown voltage ranges are available.
S2381, S2382, S5139, S8611, S3884: -01 (80 to 120 V), -02 (120 to 160 V), -03 (160 to 200 V)
S2381-10: -10A (80 to 120 V), -10B (120 to 160 V), -10C (160 to 200 V)
1
Si APD S2381 to S2385, S5139, S8611, S3884, S4315 series
ꢀꢀSpectral response
ꢀꢀQuantum efficiency vs. wavelength
(Typ. Ta=25 ˚C, λ=800 nm)
(Typ. Ta=25 ˚C)
50
100
80
M=100
40
30
60
M=50
20
40
10
0
20
0
200
400
600
800
1000
200
400
600
800
1000
WAVELENGTH (nm)
WAVELENGTH (nm)
KAPDB0020EB
KAPDB0021EA
ꢀꢀDark current vs. reverse voltage
ꢀꢀGain vs. reverse voltage
(Typ. Ta=25 ˚C)
(Typ. λ=800 nm)
10 nA
10000
20 ˚C
S2384
0 ˚C
1000
1 nA
S3884
-20 ˚C
S2383/-10
100 pA
100
10
1
40 ˚C
S2382, S5139,
S8611
S2381
100
10 pA
1 pA
60 ˚C
0
50
150
200
80
100
120
140
160
180
REVERSE VOLTAGE (V)
REVERSE VOLTAGE (V)
KAPDB0016EC
KAPDB0017EC
ꢀꢀTerminal capacitance vs. reverse voltage
ꢀꢀExcess noise factor vs. gain
(Typ. Ta=25 ˚C, f=10 kHz, B=1 Hz)
(Typ. Ta=25 ˚C, f=1 MHz)
10
1 nF
M0.5
S2384
S2385
100 pF
λ=650 nm
M0.3
S3884
10 pF
S2383/-10
S2382
S5139, S8611
M0.2
S2381
λ=800 nm
1
1 pF
1
10
100
0
50
100
150
200
GAIN
REVERSE VOLTAGE (V)
KAPDB0018EC
KAPDB0022EA
2
Si APD S2381 to S2385, S5139, S8611, S3884, S4315 series
ꢀꢀDimensional outlines (unit: mm)
ꢀꢀS2381, S2382, S2383/-10
ꢀꢀS5139
5.4 ± 0.2
5.4 ± 0.2
WINDOW
2.0 MIN.
4.7 ± 0.1
1.5 LENS
4.65 ± 0.1
PHOTOSENSITIVE
SURFACE
PHOTOSENSITIVE
SURFACE
0.45
LEAD
0.45
LEAD
2.54 ± 0.2
2.54 ± 0.2
1.2 MAX.
CASE
1.2 MAX.
CASE
KAPDA0010EA
KAPDA0018EA
ꢀꢀS8611
ꢀꢀS3884
9.1 ± 0.2
8.2 ± 0.1
WINDOW
3.0 MIN.
5.4 ± 0.2
4.65 ± 0.1
PHOTOSENSITIVE
SURFACE
0.45
LEAD
0.45
LEAD
5.08 ± 0.2
2.54 ± 0.2
1.5 MAX.
1.2 MAX.
CASE
CASE
KAPDA0031EA
KAPDA0011EB
ꢀꢀS2384
ꢀꢀS2385
13.9 ± 0.2
12.35 ± 0.1
9.1 ± 0.2
WINDOW
5.9 ± 0.1
WINDOW
10.5 ± 0.1
8.1 ± 0.1
PHOTOSENSITIVE
SURFACE
PHOTOSENSITIVE
SURFACE
0.45
LEAD
0.45
LEAD
7.5 ± 0.2
5.08 ± 0.2
INDEX MARK
1.4
1.0 MAX.
1.5 MAX.
The glass window may extend
a maximum of 0.2 mm beyond
the upper surface of the cap.
CASE
The glass window may extend
a maximum of 0.2 mm beyond
the upper surface of the cap.
CASE
KAPDA0012EA
KAPDA0013ED
3
Si APD S4315 series
TE-cooled type APD S4315 series
Parameter
Symbol
Condition
S4315
S2381
φ0.2
S4315-01 S4315-02 S4315-04
Unit
-
mm
nm
APD
-
-
λ
S2382
S2383
S2384
Effective active area *5
Spectral response range
φ0.5
φ1.0
φ3.0
400 to 1000
M=60
M=100
-
800
-
Peak sensitivity wavelength
nm
λp
800
Cooling temperature
Package
35
TO-8
°C
-
∆T
-
*5: Active area in which a typical gain can be obtained.
We welcome your request for active areas different from those listed above.
ꢀꢀCooling characteristic of TE-cooler
ꢀꢀCurrent vs. voltage characteristic of TE-cooler
(Typ. Ta=25 ˚C, thermal resistance of heatsink=3 ˚C/W)
(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
40
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
20
0
-20
-40
-60
0
0
0.4
0.8
1.2
1.6
0
0.2
0.4
0.6
0.8
1.0
1.2
CURRENT (A)
VOLTAGE (V)
KAPDB0098EA
KAPDB0100EA
ꢀꢀThermistor temperature characteristic
ꢀꢀDimensional outline (unit: mm)
15.3 ± 0.2
(Typ.)
106
105
104
14 ± 0.2
WINDOW
10 ± 0.2
PHOTOSENSITIVE
SURFACE
0.45
LEAD
10.2 ± 0.2
DETECTOR (ANODE)
DETECTOR (CATHODE)
TE-COOLER (-)
103
-40
-20
0
20
TE-COOLER (+)
THERMISTOR
ELEMENT TEMPERATURE (˚C)
KIRDB0116EA
5.1 ± 0.2
KAPDA0020EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)"
which means developmental specifications. ©2010 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KAPD1007E09
May 2010 DN
4
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