S5668-01 [HAMAMATSU]
Photo Diode;
| 型号： | S5668-01 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | Photo Diode |
| 文件： | 总2页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P H O T O D I O D E
16-element Si photodiode array
S5668 series
Photodiode array ideal for light detection in a long, narrow area
S5668 series is a 16-element Si photodiode linear array. Each element has an active area of 1.175 mm (width) × 2.0 mm (height) and is arrayed
at an element pitch of 1.575 mm. The entire linear array is mounted on a 25.4 mm (1 inch) long PC board. By linearly arranging two or more
pieces of S5668 series, a long and narrow photodiode array can be easily configured at the same element pitch. For X-ray detection applications,
S5668-11 with a CsI (Tl) scintillator and S5668-34 with a ceramic scintillator are also available.
Features
Applications
Active area: 1.175 × 2.0 mm per element
Element pitch: 1.575 mm
Mounted on a 1-inch (25.4 mm) long PC board
Long and narrow format by multiple arrays
High-speed response (S5668-02)
Low capacitance (S5668-05)
X-ray baggage inspection
Multichannel spectrophotometry
Optical position detection
■ Absolute maximum ratings
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
VR Max.
Topr
Value
10
-20 to +60
-20 to +80
Unit
V
°C
°C
Tstg
■ Electrical and optical characteristics (Ta=25 °C, per 1 element)
S5668-01
S5668-02
S5668-05
Parameter
Symbol Condition
Unit
nm
nm
Typ.
Max.
Typ.
Max.
Typ.
Max.
320 to 1100
320 to 1100
320 to 1060
Spectral response range
Peak sensitivity
wavelength
-
-
-
λ
960
-
960
-
920
-
λp
0.31
0.56
1
-
-
10
0.31
0.58
5
-
-
30
0.31
0.56
10
-
-
50
λ=540 nm
λ=λp
VR=10 mV
VR=0 V
RL=1 kΩ
10 to 90 %
VR=0 V
f=10 kHz
VR=0 V
λ=540 nm
Photo sensitivity
Dark current
S
A/W
pA
ID
tr
Rise time
0.7
-
0.1
-
0.1
-
µs
Terminal capacitance
Noise equivalent power
Ct
300
550
-
30
40
-
20
30
-
pF
NEP
W/Hz1/2
4.1 × 10-15
9.3 × 10-15
1.3 × 10-14
1
16-element Si photodiode array S5668 series
■ Dimensional outline (unit: mm)
25.4+-00.3
0.6 ± 0.15
1.3
1.0 ± 0.15
(25.0)
P 2.54 × 8 = 20.32
C-2.0
PIN No.
MARK
GLASS EPOXY BOARD
G-10 (BLACK)
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
EPOXY RESIN
1.175
PIN No.
3.5 ± 0.5
1.575
P 1.575 × 15 = 23.625
CATHODE COMMON
ANODE 2
ANODE 4
ANODE 6
ANODE 8
ANODE 10
ANODE 12
ANODE 14
ANODE 16
CATHODE COMMON
ANODE 15
ANODE 13
ANODE 11
ANODE 9
ANODE 7
ANODE 5
ANODE 3
ANODE 1
KMPDA0042EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KMPD1012E06
Aug. 2006 DN
2
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