S6036 [HAMAMATSU]
Si PIN photodiode 7 mm lens plastic package; 硅PIN光电二极管7毫米镜头塑料包装
| 型号： | S6036 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | Si PIN photodiode 7 mm lens plastic package |
| 文件： | 总2页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P H O T O D I O D E
Si PIN photodiode
S6036 series
7 mm lens plastic package
S6036 series is Si PIN photodiode molded into a plastic package with a 7 mm lens. Two types are available: S6036 of clear plastic package and
S6036-01 of visible-cut package.
Features
Applications
Plastic package with 7 mm lens
High-speed response: 25 MHz Typ. (V
High sensitivity: 0.56 A/W (λ=λp)
Directivity: ±25˚ (half angle)
Spatial light transmission
Optical communications
Optical data link
High-speed optical measurement
Optical switches
R=12 V, λ=850 nm)
S6036-01: visible-cut type
Laser radars
Absolute maximum ratings
■
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
VR Max.
Topr
Value
35
-25 to +85
-40 to +100
Unit
V
°C
°C
Tstg
■ Electrical and optical characteristics (Ta=25 °C)
S6036
S6036-01
Parameter
Symbol
Condition
Unit
nm
Min.
-
Typ.
320 to
1100
960
0.56
30
Max.
-
Min.
-
Typ.
760 to
1100
960
0.56
17
Max.
-
Spectral response range
λ
Peak sensitivity wavelength
Photo sensitivity
Short circuit current
λp
S
Isc
ID
-
0.51
24
-
-
-
-
-
0.51
13
-
-
-
-
nm
A/W
µA
λ=λp
100 lx, 2856 K
VR=12 V
Dark current
0.1
10
0.1
10
nA
Temperature coefficient of
dark current
TCID
-
1.15
25
-
-
-
1.15
25
-
-
times/°C
MHz
VR=12 V, RL=50 Ω
λ=850 nm, -3 dB
VR=12 V, f=1 MHz
Cut-off frequency
fc
10
10
Terminal capacitance
Half angle
Ct
-
-
-
15
25
30
-
-
-
15
25
30
-
pF
degree
Si PIN photodiode S6036 series
■ Spectral response
■ Dark current vs. reverse voltage
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
10 nA
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
QE=100 %
S6036
1 nA
100 pA
10 pA
1 pA
S6036-01
1000
200
400
600
800
0.01
0.1
1
10
100
WAVELENGTH (nm)
REVERSE VOLTAGE (V)
KPINB0350EA
KPINB0351EA
■ Directivity
■ Terminal capacitance vs. reverse voltage
(Typ. Ta=25 ˚C)
10˚ 20˚
(Typ. Ta=25 ˚C, f=1 MHz)
20˚
10˚
0˚
1 nF
100 %
30˚
30˚
80 %
60 %
100 pF
40˚
50˚
40˚
50˚
40 %
20 %
10 pF
60˚
70˚
60˚
70˚
80˚
90˚
80˚
90˚
1 pF
0.1
1
10
100
REVERSE VOLTAGE (V)
RELATIVE SENSITIVITY
KPINB0352EA
KPINB0353EA
■ Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.1)
CENTER OF LENS
7.9 ± 0.2
5.0 3.25 0.2 MAX.
1.95
0.8
0.5
5.08
0.5
KPINA0047EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KSPD1078E01
Sept. 2007 DN
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