S6775-01 [HAMAMATSU]
Si PIN photodiode Plastic SIP (Single In-line Package); 硅PIN光电二极管塑料SIP （单列直插封装）
| 型号： | S6775-01 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | Si PIN photodiode Plastic SIP (Single In-line Package) |
| 文件： | 总2页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P H O T O D I O D E
Si PIN photodiode
,
S2506/S6775/S6967 series S6786
Plastic SIP (Single In-line Package)
S2506/S6775/S6967 series and S6786 are Si PIN photodiodes with large active areas, molded into a clear or visible-cut plastic SIP (Single In-line
Package) for detecting visible to near infrared range or near infrared range only. These Si PIN photodiodes feature high sensitivity, high-speed
response and large active areas, allowing you to choose the optimum type that best matches your application.
Features
Applications
S2506-02: Visible to near infrared range
S2506-04: Visible-cut
S6786 : Visible to near infrared range, high sensitivity,
high-speed response
Spatial light transmission
Optical switches
Laser radar, etc.
S6775, S6967: Visible to near infrared range, high sensitivity,
high-speed response, large active area
S6775-01, S6967-01: Visible-cut, high sensitivity,
high-speed response, large active area
Plastic package: 7 × 7.8 mm
Active area size
S2506 series, S6786: 2.77 × 2.77 mm
S6775/S6967 series : 5.5 × 4.8 mm
ꢀ General ratings / Absolute maximum ratings
Absolute maximum ratings
Active area Effective active
Operating
temperature
Topr
Reverse
voltage
VR Max.
(V)
Power
dissipation
P
Storage
temperature
Tstg
Dimensional
outline
size
area
(mm2)
7.7
Type No.
Package
Plastic
(mm)
(mW)
(°C)
(°C)
S2506-02
S2506-04
S6786
S6775
S6775-01
S6967
ꢀ
ꢀ
2.77 × 2.77
150
50
35
-25 to +85 -40 to +100
5.5 × 4.8
26.4
S6967-01
ꢀ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Temp.
coefficient
of
ID
TCID
Photo sensitivity
Short
circuit
current
Isc
Cut-off
frequency
fc
RL=50 Ω
-3 dB
Peak
sensitivity
wavelength
λp
Spectral
response
range
λ
Terminal
S
(A/W)
capacitance
Dark current
ID
NEP
Ct
Type No.
f=1 MHz
100 lx
660 n m 780 n m 830 n m
λp
Typ. Max.
(nm)
(nm)
(µA) (nA) (nA)
(MHz)
(pF)
(W/Hz1/2)
(times/° C)
320 to 1100
760 to 1100
320 to 1060
320 to 1100
700 to 1100
320 to 1060
700 to 1060
S2506-02
S2506-04
S6786
S6775
S6775-01
S6967
S6967-01
*1: VR=12 V
*2: VR=10 V
0.4 0.48 0.5
7.3
1
1
1
1
*
*
*
*
*
*
960 0.56
900 0.65
0.1 *1 10
25
15
15
40
1.0 × 10-14
-
-
0.25 4.1
2
2
2
2
2
2
2
2
2
7.5 0.3
30
21
0.5
26
5
60
1.5 × 10-14
1.8 × 10-14
1.9 × 10-14
*
*
*
*
*
*
*
0.45 0.55 0.6
0.7
0.68
1.15
2
2
*
*
*
960
10
15
50
-
0.48 0.54
*
0.65 0.45 0.55 0.6
0.63 0.48 0.54
2
2
2
2
2.0 × 10-14
*
*
900
5
50
-
18
1
Si PIN photodiode S2506/S6775/S6967 series, S6786
ꢀꢀꢀPhoto sensitivity temperature characteristic
ꢀ Spectral response
(S2506-02)
S2506 series, S6786
S6775/S6967 series
(Typ.)
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
+1.5
+1.0
+0.5
0.8
0.7
0.8
0.7
0.6
0.5
0.4
0.3
0.2
S6775
S6775-01
QE=100 %
QE=100 %
0.6
0.5
0.4
0.3
0.2
S2506-02
S6786
S6967
S6967-01
0
0.1
0
0.1
0
S2506-04
1000
-0.5
200
400
600
800
1000
200
400
600
800
200
400
600
800
1000
WAVELENGTH (nm)
WAVELENGTH (nm)
WAVELENGTH (nm)
KPINB0063EC
KPINB0348EA
KPINB0349EA
ꢀ Dark current vs. reverse voltage
ꢀ
Dark current vs. ambient temperature ꢀ Terminal capacitance vs.
reverse voltage
(Typ. Ta=25 ˚C)
(Typ.)
(Typ. Ta=25 ˚C, f=1 MHz)
10 nA
1 nF
10 µA
1 µA
S6775/-01, S6967/-01 (VR=10 V)
S6967/-01
S6775/-01
1 nA
S2506-02/-04
S6967/-01
S6775/-01
100 nA
10 nA
1 nA
S6786 (V
S2506-02/-04 (V
R
=10 V)
100 pF
R
=12 V)
100 pA
S6786
10 pF
S6786
100 pA
10 pA
1 pA
10 pA
S2506-02/-04
1 pA
0.01
1 pF
0.1
0.1
1
10
100
1
10
100
-20
0
20
40
60
80
REVERSE VOLTAGE (V)
AMBIENT TEMPERATURE (˚C)
REVERSE VOLTAGE (V)
KPINB0168EB
KPINB0169EB
KPINB0170EB
ꢀꢀDimensional outline (unit: mm, tolerance unless otherwise noted: ±0.1)
ꢀ Directivity (S2506-02)
7.0 ± 0.2
(Typ. Ta=25 ˚C)
20˚
CENTER OF
ACTIVE AREA
20˚
10˚
0˚
10˚
2.7 ± 0.2 0.2 MAX.
30˚
3.5 ± 0.2
30˚
100 %
ACTIVE AREA
b
INCIDENT LIGHT
80 %
60 %
40˚
40˚
1.1
1.4
1.0
0.5
50˚
50˚
40 %
20 %
60˚
70˚
60˚
70˚
5.08
0.5
80˚
90˚
80˚
90˚
Type No.
a
b
RELATIVE SENSITIVITY
S2506 series
S6786
2.8 ± 0.2 2.77 × 2.77
3.65 ± 0.2 5.5 × 4.8
KPINB0065EB
(0.3)
(0.4)
(0.5)
(0.5)
(0.3)
(0.4)
S6775/S6967
series
1.0
(0.6)
1.0
(0.6)
DETAILS OF LEAD ROOT
KPINA0084EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KPIN1048E02
Jun. 2006 DN
2
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