S7017-1007 [HAMAMATSU]
CCD area image sensor; CCD面积图像传感器型号: | S7017-1007 |
厂家: | HAMAMATSU CORPORATION |
描述: | CCD area image sensor |
文件: | 总8页 (文件大小:183K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
I M A G E S E N S O R
CCD area image sensor
S7017 series
Four-stage TE-cooled, front-illuminated FFT-CCDs
S7017 series is a family of FFT-CCD area image sensors specifically designed for low-light-level detection in scientific applications. By using the
binning operation, S7017 series can be used as a linear image sensor having a long aperture in the direction of the device length. This makes
S7017 series ideally suited for use in spectrophotometry. The binning operation offers significant improvement in S/N and signal processing
speed compared with conventional methods by which signals are digitally added by an external circuit. S7017 series also features low noise and
low dark signal (MPP mode operation). These enable low-light-level detection and long integration time, thus achieving a wide dynamic range.
S7017 series has a pixel size of 24 × 24 µm and is available in active area of 24.576 (H) × 2.976 (V) and 24.576 (H) × 6.048 (V) mm.
A four-stage Peltier element is built into the same package for thermoelectric cooling. At room temperature operation, the device can be cooled
down to -70 ˚C with using forced air cooling. In addition, since both the CCD chip and Peltier element are hermetically sealed, no dry air is
required, thus allowing easy handling.
Features
Applications
ꢀ 1024 (H) × 124 (V) and 1024 (H) × 252 (V) pixel format
ꢀ Pixel size: 24 × 24 µm
ꢀ 100 % fill factor
ꢀ Wide dynamic range
ꢀ Low dark current
ꢀ Astronomy
ꢀ Scientific measuring instrument
ꢀ Fluorescence spectrometer
ꢀ Raman spectrophotometer
ꢀ Optical and spectrophotometric analyzer
ꢀ For low-light-level detection requiring
ꢀ Low readout noise
ꢀ MPP operation
ꢀ Four-stage TE-cooled
Selection and order guide
ꢀꢀ
Number of
Number of
active pixels
1024 ×124
1024 × 252
Active area
Type No.
Cooling
total pixels
1044 × 128
1044 × 256
[mm (H) × mm (V)]
24.576 × 2.976
24.576 × 6.048
S7017-1007
S7017-1008
Four-stage
TE-cooled
S7017 series has a hermetically-sealed package with AR-coated sapphire window.
General ratings
ꢀꢀ
Parameter
Specification
CCD structure
Fill factor
Full frame transfer
100 %
S7017-1007: 1024 (H) × 124 (V)
S7017-1008: 1024 (H) × 252 (V)
24 (H) × 24 (V) µm
Number of active pixels
Pixel size
S7017-1007: 24.576 (H) × 2.976 (V) mm
S7017-1008: 24.576 (H) × 6.048 (V) mm
2 phase
Active area
Vertical clock phase
Horizontal clock phase
Output circuit
Package
2 phase
One-stage MOSFET source follower
28 pin metal package
Window
AR coated Sapphire
1
CCD area image sensor S7017 series
ꢀꢀAbsolute maximum ratings (Ta=25 °C)
Parameter
Operating temperature
Storage temperature
OD voltage
RD voltage
ISV voltage
ISH voltage
IGV voltage
IGH voltage
SG voltage
OG voltage
RG voltage
TG voltage
Vertical clock voltage
Horizontal clock voltage
Symbol
Topr
Tstg
VOD
VRD
VISV
VISH
VIG1V, VIG2V
VIG1H, VIG2H
VSG
Min.
-50
-100
-0.5
-0.5
-0.5
-0.5
-10
-10
-10
-10
-10
-10
Typ.
Max.
+30
+70
+25
+18
+18
+18
+15
+15
+15
+15
+15
+15
+15
+15
Unit
°C
°C
V
V
V
V
V
V
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VOG
VRG
VTG
V
V
V
V
VP1V, VP2V
VP1H, VP2H
-10
-10
V
Operating conditions (MPP mode, Ta=25 °C)
ꢀꢀ
Parameter
Output transistor drain voltage
Reset drain voltage
Symbol
VOD
VRD
Min.
18
11.5
1
Typ.
20
12
3
Max.
22
12.5
5
Unit
V
V
Output gate voltage
VOG
V
Substrate voltage
VSS
-
0
-
V
Test point (vertical input source)
Test point (horizontal input source)
Test point (vertical input gate)
Test point (horizontal input gate)
Vertical shift register
clock voltage
Horizontal shift register
clock voltage
VISV
VISH
-
-
VRD
VRD
0
0
6
-8
6
-8
6
-8
6
-8
6
-
-
-
-
8
-7
8
-7
8
-7
8
V
V
V
V
VIG1V, VIG2V
VIG1H, VIG2H
VP1VH, VP2VH
VP1VL, VP2VL
VP1HH, VP2HH
VP1HL, VP2HL
VSGH
-8
-8
4
-9
4
-9
4
-9
4
High
Low
High
Low
High
Low
High
Low
High
Low
V
V
V
V
V
Summing gate voltage
Reset gate voltage
VSGL
VRGH
VRGL
VTGH
-9
4
-9
-7
8
-7
Transfer gate voltage
VTGL
-8
Electrical characteristics (Ta=25 °C)
ꢀꢀ
Parameter
Signal output frequency
Symbol
fc
frg
Remark
Min.
-
-
-
-
-
-
-
Typ.
80
80
3,200
6,400
300
7
7
150
0.99999
Max.
2,000
2,000
-
-
-
-
-
-
-
Unit
kHz
kHz
-
-
-
-
-
-
-
-
Reset clock frequency
Vertical shift register
capacitance
S7017-1007
S7017-1008
CP1V, CP2V
pF
Horizontal shift register capacitance
Summing gate capacitance
Reset gate capacitance
Transfer gate capacitance
Transfer efficiency
CP1H, CP2H
CSG
pF
pF
pF
pF
-
CRG
CTG
CTE
-
1
*
0.99995
2
DC output level
Vout
Zo
*
12
-
15
3
18
-
V
2
Output impedance
Power dissipation
*
kΩ
P
*2, *3
-
15
-
mW
*1: Charge transfer efficiency per pixel, measured at half of the full well capacity.
*2: VOD=20 V , Load resistance=22 kΩ
*3: Power dissipation of the on-chip amplifier.
2
CCD area image sensor S7017 series
Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)
ꢀ
Parameter
Symbol
Vsat
Remark
Min.
-
150
300
Typ.
Fw × Sv
300
Max.
Unit
V
Saturation output voltage
Full well
capacity
-
-
-
-
Vertical
Horizontal
4
-
*
Fw
Sv
ke
600
5
-
*
CCD conversion efficiency
1.8
2.2
-
µV/e
+25 °C
Dark current
0 °C
-
-
-
400
20
0.0015
3,000
150
0.01
6
-
*
DS
e /pixel/s
(MPP mode)
-70 °C
7
-
*
Readout noise
Nr
-
6
12
e rms
Line binning
Area scanning
Spectral response range
Photo response non-uniformity
Point defects
25,000
12,500
75,000
37,500
400 to 1,100
-
-
-
-
10
8
*
Dynamic range
DR
-
-
9
-
-
nm
%
λ
*
PRNU
10
*
-
-
-
-
-
-
0
0
0
11
*
Blemish
Cluster defects
Column defects
-
-
12
*
*4: Large horizontal full well for line binning operation.
*5: VOD=20 V , Load resistance=22 kΩ
*6: Dark current nearly doubles for every 5 to7 °C increase in temperature.
*7: -40 °C, operating frequency is 80 kHz.
*8: DR = Fw / Nr
*9: Measured at half of the full well capacity. PRNU (%) = noise / signal × 100, noise: fixed pattern noise (peak to peak)
*10: White spots > 3 % of full well at 0 °C after Ts=1 s, Black spots > 50 % reduction in response relative to adjacent
pixels
*11: continuous 2 to 9 point defects
*12: continuous >10 point defects
PIN connections
ꢀꢀ
Pin No.
1
Symbol
P-
Description
Remark
TE-cooler-
2
NC
3
SS
Substrate (GND)
4
NC
5
6
7
8
ISV
Test point (vertical input source)
Test point (vertical input gate-2)
Test point (vertical input gate-1)
Reset gate
Shorted to RD
Shorted to 0 V
Shorted to 0 V
IG2V
IG1V
RG
9
RD
Reset drain
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
OS
OD
OG
SG
Output transistor source
Output transistor drain
Output gate
Summing gate
TE-cooler+
Temperature sensor (hot side)
Temperature sensor (cool side)
Temperature sensor (cool side)
CCD horizontal register clock-2
CCD horizontal register clock-1
Test point (horizontal input gate-2)
Test point (horizontal input gate-1)
Test point (horizontal input source)
CCD vertical register clock-2
CCD vertical register clock-1
Transfer gate
Same timing as P2H
P+
TSH1
TSC1
TSC2
P2H
P1H
IG2H
IG1H
ISH
P2V
P1V
TG
NC
NC
Shorted to 0 V
Shorted to 0 V
Shorted to RD
Same timing as P2V *13
TSH2
Temperature sensor (hot side)
*13: TG is an isolation gate between vertical register and horizontal resister.
In standard operation, the same pulse of P2V should be applied to the TG.
3
CCD area image sensor S7017 series
ꢀꢀSpectral response without window
ꢀꢀSpectral transmittance characteristic
of window material
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
50
40
30
20
10
0
100
95
AR COATED SAPPHIRE
90
85
80
400 500 600 700 800 900 1000 1100 1200
400 500 600 700 800 900 1000 1100 1200
WAVELENGTH (nm)
WAVELENGTH (nm)
KMPDB0051EA
KMPDB0106EA
ꢀꢀDimensional outline (unit: mm)
a
20.0
PIN No. 1
7.0
1.0
4.0
1st PIN INDEX MARK
28
27
26
2
3
12
13
17
16
14
15
35.0
47.0
PINCHED OFF TUBE
5.0
AR-COATED SAPPHIRE WINDOW
ACTIVE AREA
TYPE No.
a
b
S7017-1007 24.576 (H) 2.976 (V)
S7017-1008 24.576 (H) 6.048 (V)
0.25
50.8
KMPDA0098EA
4
CCD area image sensor S7017 series
ꢀꢀDevice structure, line output format
IG2V ISV
IG1V
SS
3
P1V
24
TG
25
P2V
23
7
5
6
V
1
V=124, 252
H=1024
......
......
H
RG
RD
OS
8
9
22
ISH
10
21 IG1H
13
SG
11
12
18 19
P2H P1H
20
IG2H
OD OG
2 ISOLATOIN
2 ISOLATOIN
1024
SIGNAL OUT
4 OPTICAL
BLACK
4 OPTICAL
BLACK
4 BLANK
4 BLANK
Pixel format
KMPDC0085EA
Left ← Horizontal Direction → Right
Blank
4
Optical Black
4
Isolation
Effective
1024
Isolation
Optical Black
4
Blank
4
2
2
Top ← Vertical Direction → Bottom
Isolation
Effective
124 or 252
Isolation
2
2
ꢀꢀTiming chart
ꢀꢀArea scanning 1 (low dark current mode)
INTEGRATION PERIOD
(Shutter must be open)
READOUT PERIOD (Shutter must be closed)
4..127 128←124+4 (ISOLATION) : S7017-1007
4..255 256←252+4 (ISOLATION) : S7017-1008
Tpwv
1
2
3
P1V
P2V, TG
P1H
P2H, SG
RG
OS
Tovr
P2V, TG
ENLARGED VIEW
Tpwh, Tpws
P1H
P2H, SG
RG
Tpwr
D1
OS
D2
D3
D4
D18
D19
D20
D5..D10, S1..S1024, D11..D17
KMPDC0086EA
5
CCD area image sensor S7017 series
Parameter
Pulse width
Symbol
Tpwv
Tprv, Tpfv
Tpwh
Tprh, pfh
-
Tpws
Tprs, Tpfs
-
Tpwr
Tprr, Tpfr
Tovr
Remark
Min.
6 *15
Typ.
-
-
-
-
50
-
-
50
-
-
Max.
Unit
µs
ns
ns
ns
%
ns
ns
%
-
-
-
-
-
-
-
-
-
-
-
14
*
P1V, P2V, TG
P1H, P2H
Rise and fall time
Pulse width
Rise and fall time
Duty ratio
Pulse width
Rise and fall time
Duty ratio
Pulse width
Rise and fall time
Overlap time
200
250
10
-
250
10
-
100
5
3
14
*
SG
-
ns
ns
µs
RG
-
-
TG – P1H
-
*14: Symmetrical pulses should be overlapped at 50 % of maximum amplitude.
*15: In case of S7017-1007.
ꢀꢀꢀꢀꢀArea scanning 2 (large full well mode)
INTEGRATION PERIOD
READOUT PERIOD (Shutter must be closed)
(Shutter must be open)
4..127 128←124+4 (ISOLATION) : S7017-1007
4..255 256←252+4 (ISOLATION) : S7017-1008
Tpwv
1
2
3
P1V
P2V, TG
P1H
P2H, SG
RG
OS
Tovr
P2V, TG
ENLARGED VIEW
Tpwh, Tpws
P1H
P2H, SG
RG
Tpwr
D1
OS
D2
D3
D4
D18
D19
D20
D5..D10, S1..S1024, D11..D17
KMPDC0100EA
Parameter
Pulse width
Symbol
Tpwv
Tprv, Tpfv
Tpwh
Tprh, Tpfh
-
Tpws
Tprs, Tpfs
-
Tpwr
Tprr, Tpfr
Tovr
Remark
Min.
Typ.
-
-
-
-
50
-
-
50
-
-
Max.
Unit
6 *17
-
-
-
-
-
-
-
-
-
-
-
µs
ns
ns
ns
%
ns
ns
%
16
*
P1V, P2V, TG
P1H, P2H
Rise and fall time
Pulse width
Rise and fall time
Duty ratio
Pulse width
Rise and fall time
Duty ratio
Pulse width
Rise and fall time
Overlap time
200
250
10
-
250
10
-
100
5
3
16
*
SG
-
ns
ns
µs
RG
-
-
TG - P1H
-
*16: Symmetrical pulses should be overlapped at 50 % of maximum amplitude.
*17: In case of S7017-1007.
6
CCD area image sensor S7017 series
ꢀꢀꢀꢀꢀLine binning
INTEGRATION PERIOD
(Shutter must be open)
VERTICAL BINNING PERIOD
(Shutter must be closed)
READOUT PERIOD (Shutter must be closed)
3..126 127
3..254 255
2
128← 124+4 (ISOLATION): S7017-1007
256← 252+4 (ISOLATION): S7017-1008
Tpwv
1
P1V
Tovr
P2V, TG
P1H
Tpwh, Tpws
4..1042
1
2
3
1043
1044
P2H, SG
Tpwr
D1
RG
OS
D2
D19
D20
D3..D10, S1..S1024, D11..D18
KMPDC0087EA
Parameter
Symbol
Tpwv
Remark
Min.
6 *19
Typ.
Max.
Unit
µs
ns
ns
ns
%
ns
ns
%
Pulse width
-
-
-
-
50
-
-
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
18
*
P1V, P2V, TG
P1H, P2H
Rise and fall time
Pulse width
Rise and fall time
Duty ratio
Pulse width
Rise and fall time
Duty ratio
Pulse width
Rise and fall time
Overlap time
Tprv, Tpfv
Tpwh
Tprh, Tpfh
-
Tpws
Tprs, Tpfs
-
Tpwr
Tprr, Tpfr
Tovr
200
250
10
-
250
10
-
100
5
3
18
*
SG
-
ns
ns
µs
RG
-
-
TG – P1H
*18: Symmetrical pulses should be overlapped at 50 % of maximum amplitude.
*19: In case of S7017-1007.
Specifications of built-in TE-cooler
ꢀꢀ
Parameter
Internal resistance
Symbol
Rint
Condition
Ta=27 °C
Min.
-
Typ.
1.6
Max.
-
Unit
Ω
Th *21=27 °C
∆T *22=∆Tmax
Th*21=27 °C
Maximum current *20
Imax
Vmax
Qmax
-
-
4.4
7.4
3.0
A
Maximum voltage
-
-
-
-
V
∆T=∆Tmax
I=Imax
Tc *24=Th *21=27 °C
Maximum heat absorption *23
W
I=Imax
Maximum temperature at hot side
CCD temperature
-
-
-
-
-
50
-50
°C
°C
Ta=25 °C
-70
*20: If the current is greater than Imax, the heat absorption begins to decrease due to the Joule heat. It should be noted that
this value is not a damage threshold. To protect the thermoelectric cooler (Peltier element) and maintain stable operation,
the supply current should be less than 60 % of this maximum current.
*21: Temperature at hot side of thermoelectric cooler.
*22: ∆T=Th - Tc
*23: This is a theoretical heat absorption level that offsets the temperature difference in the Peltier element when the maximum
current is supplied to the unit.
*24: Temperature at cool side of thermoelectric cooler.
7
CCD area image sensor S7017 series
(Typ. Ta=25 ˚C)
6
5
4
3
2
40
20
0
V - I
CCD TEMPERATURE - I
-20
-40
-60
-80
1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
CURRENT (A)
KMPDB0107EA
Specifications of built-in temperature sensors
ꢀꢀ
Parameter
Resistance at cool side
Temperature coefficient of resistance at cool side
Resistance at hot side
Temperature coefficient of resistance at hot side
Symbol
Rc
-
Rh
-
Condition
T=0 °C
Min.
Typ.
1,000
0.00375
1,000
Max.
Unit
Ω
-
-
-
-
-
-
-
-
-
Ω/Ω
Ω
T=0 °C
-
0.00385
Ω/Ω
(Typ. Ta=25 ˚C)
1400
1200
1000
800
600
400
200
0
-100
-80
-60
-40
-20
0
20
40
TEMPERATURE (˚C)
KMPDB0108EA
ꢀꢀPrecaution for use (electrostatic countermeasures)
ꢀ Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with
an earth ring, in order to prevent electrostatic damage due to electrical charges from friction.
ꢀ Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.
ꢀ Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to
discharge.
ꢀ Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the
amount of damage that occurs.
ꢀꢀElement cooling/heating temperature incline rate
Element cooling/heating temperature incline rate should be set at less than 5 K/min.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2005 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KMPD1030E07
Apr. 2005 DN
8
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