S8377_15 [HAMAMATSU]

CMOS linear image sensors;


型号：	S8377_15
厂家：	HAMAMATSU CORPORATION
描述：	CMOS linear image sensors
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中文：	中文翻译
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CMOS linear image sensors

S8377/S8378 series

Built-in timing generator and signal process-

ing circuit; 5 V single supply operation

The S8377/S8378 series is a family of CMOS linear image sensors designed for image input applications. These linear image

sensors operate from 5 V single supply with only start and clock pulse inputs, making them easy to use. The signal process-

ing circuit has a charge ampliﬁer with excellent input/output characteristics and allows signal readout at 500 kHz.

The photodiodes of the S8377 series have a height of 0.5 mm and are arrayed in a row at a spacing of 50 μm. The photo-

diodes of the S8378 series also have a height of 0.5 mm but are arrayed at a spacing of 25 μm. The photodiodes are avail-

able in 3 different pixel quantities for each series: 128 (S8377-128Q), 256 (S8377-256Q, S8378-256Q), 512 (S8377-512Q,

S8378-512Q) and 1024 (S8378-1024Q). Quartz glass is the standard window material.

Features

Applications

Wide photosensitive area

Pixel pitch: 50 μm (S8377 series)

25 μm (S8378 series)

Image input devices

Optical sensing devices

Pixel height: 0.5 mm

On-chip charge ampliﬁer with excellent input/output

characteristics

Built-in timing generator allows operation with only

start and clock pulse inputs

Maximum operating clock frequency: 500 kHz

Spectral response range: 200 to 1000 nm

5 V single power supply operation

8-pin small package, S8377 and S8378 series are pin

compatible.

Structure

Parameter

Number of pixels

Pixel pitch

S8377-128Q S8377-256Q S8377-512Q S8378-256Q S8378-512Q S8378-1024Q

Unit

μm

128

256

512

256

512

1024

Pixel height

0.5

Package length

Number of pins

Package

15.8

22.2

35.0

15.8

22.2

35.0

Ceramic

Quartz

Window material

Absolute maximum ratings

Parameter

Supply voltage

Gain selection terminal voltage

Clock pulse voltage

Start pulse voltage

Operating temperature*¹

Symbol

Vdd

Condition

Ta=25 °C

Value

Unit

-0.3 to +10

-20 to +60

-20 to +80

V(CLK) Ta=25 °C

V(ST)

Topr

Tstg

Ta=25 °C

°C

Storage temperature

*1: No condensation

Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the

product within the absolute maximum ratings.

www.hamamatsu.com

S8377/S8378 series

CMOS linear image sensors

Recommended terminal voltage

Parameter

Symbol

Vdd

Min.

4.75

Typ.

Vdd

Max.

5.25

0.4

Unit

Supply voltage

Gain selection

terminal voltage

High gain

Low gain

High level

Low level

High level

Low level

Vdd - 0.25

Vdd + 0.25

0.4

Vdd + 0.25

0.4

Clock pulse voltage

Start pulse voltage

V(CLK)

V(ST)

Electrical characterisitics

Parameter

Clock pulse frequency*²

Output impedance*³

Symbol

f(CLK)

Min.

0.1 k

Typ.

Max.

500 k

Unit

k

Power consumption

*2: Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V, Vg=5 V (low gain)

*3: An increased current consumption at the video terminal rises the sensor chip temperature causing an increased dark current.

Connect a buffer amplifier for impedance conversion to the video terminal so that the current flowing to the video terminal is

minimized.

Use a JFET or CMOS input, high-impedance input op amp as the buffer ampliﬁer.

Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V]

S8377 series

S8378 series

Typ.

Parameter

Symbol

Unit

Min.

Typ.

Max.

Min.

Max.

Spectral response range

Peak sensitivity wavelength



p

200 to 1000

500

High gain

Low gain

4.4

Photosensitivity

V/lx s

Dark current

2.8

2.1

0.01

12.5

1.0

0.2

3.2

2.5

145

0.03

3.0

0.6

±3

2.8

2.1

0.01

6.3

0.5

2.5

2.0

0.4

3.2

2.5

0.03

6.0

1.2

±3

Qsat

Saturation charge

Feedback capacitance

of charge ampliﬁer

High gain

Low gain

High gain

Low gain

High gain

Low gain

High gain

Low gain

Dark output voltage*⁵

Saturation output voltage

Vsat

Esat

145

570

Saturation exposure*⁶

mlx s

570

0.4 (-128Q)

0.5 (-256Q)

0.8 (-512Q)

0.1 (-128Q)

0.15 (-256Q)

0.2 (-512Q)

0.9 (-256Q)

1.3 (-512Q)

2.1 (-1024Q)

0.2 (-256Q)

0.3 (-512Q)

0.4 (-1024Q)

High gain

Readout noise

mV rms

Low gain

Photoresponse nonuniformity*⁷

PRNU

*4: Vg=5 V (low gain), Vg=0 V (high gain)

*5: Integration time=100 ms

*6: Measured with a tungsten lamp of 2856 K

*7: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly

illuminated by light which is 50% of the saturation exposure level. PRNU is deﬁned as follows:

PRNU= X/X × 100 [%]

X: average output of all pixels, X: difference between X and maximum or minimum output

S8377/S8378 series

CMOS linear image sensors

Spectral response (typical example)

(Ta=25 °C)

100

200

400

600

800

1000

Wavelength (nm)

KMPDB0213EC

Block diagram

EOS

CMOS digital shift register

Address switch

Charge

amp

Clamp

circuit

Video

Photodiode array

N-1 N

Timing generator

Vdd

Vss

CLK

KMPDC0150EB

S8377/S8378 series

CMOS linear image sensors

Timing chart

tpi(ST)

Integration time

CLK

Video

EOS

n-1

tr(ST)

tf(ST)

t(CLK-ST)

tpw(CLK)

tr(CLK)

tf(CLK)

CLK

Video

tvd1

tvd2

KMPDC0149EC

Parameter

Symbol

tpi(ST)

Min.

1/f ×

Typ.

Max.

Unit

Start pulse width interval

(number of pixels + 2)

Start pulse rise and fall times

Clock pulse width

Clock pulse rise and fall times

Clock pulse-start pulse timing

Video delay time 1

1000 ns

400 ns

200

300

150

5 ms

400

250

tr(ST), tf(ST)

tpw(CLK)

tr(CLK), tf(CLK)

t(CLK-ST)

tvd1

Video delay time 2

tvd2

Note: The CLK pulse should be set from high to low just once when the ST pulse is low. The internal shift register starts operating at

this timming.

Integration time is determined by the interval between the CLK falling edge during the Low period of a start pulse and the CLK

falling edge during the Low period of the next start pulse. However, since the charge integration of each pixel is carried out

between the signal readout of that pixel and the next signal readout of the same pixel, the start time of charge integration differs

depending on each pixel. In addition, the next start pulse cannot be input until signal readout from all pixels is completed.

S8377/S8378 series

CMOS linear image sensors

Dimensional outlines (unit: mm)

S8377-128Q, S8378-256Q

Photosensitive area

6.4 × 0.5

3.2 0.3

1.3 0.2*

Photosensitive

surface

15.8 0.3

* Distance from upper surface of window

to photosensitive surface

0.51 0.05

2.54 0.13

7.62 0.13

KMPDA0150ED

S8377-256Q, S8378-512Q

Photosensitive area

12.8 × 0.5

1.3 0.2*

6.4 0.3

Photosensitive

surface

22.2 0.3

* Distance from upper surface of window

to photosensitive surface

0.51 0.05

2.54 0.13

7.62 0.13

KMPDA0151ED

S8377/S8378 series

CMOS linear image sensors

S8377-512Q, S8378-1024Q

Photosensitive area

25.6 × 0.5

1.3 0.2*

12.8 0.3

Photosensitive

surface

35.0 0.35

* Distance from upper surface of window

to photosensitive surface

0.51 0.05

2.54 0.13

7.62 0.13

KMPDA0152ED

Pin connections

Pin no.

Symbol

CLK

Name of pin

Function

Pulse input to operate the shift register. The readout time (data rate) equals the

clock pulse frequency.

Clock pulse

Starts the shift register operation. Integration time is determined by the interval

between the CLK falling edge during the Low period of a start pulse and the CLK

falling edge during the Low period of the next start pulse.

Start pulse

Vdd

Video

EOS

Vss

Gain selection voltage

Supply voltage

Input of 5 V selects “Low gain” and 0 V selects “High gain”.

5 V typ.

Open

Signal output. Positive-going output from 1 V

Negative-going signal output obtained at a timing following the last pixel scan

Video

End of scan

Ground

CLK

Vss

EOS

Vide

Vdd

KMPDC0151EA

S8377/S8378 series

CMOS linear image sensors

Handling precautions

(1) Electrostatic countermeasures

Although the CMOS linear image sensor is protected against static electricity, proper electrostatic countermeasures must be

provided to prevent device destruction by static electricity. For example, such measures include wearing non-static gloves and

clothes, and grounding the work area and tools.

(2) Incident window

If the incident window is contaminated or scratched, the output uniformity will deteriorate considerably, so care should be taken in

handling the window. Avoid touching it with bare hands.

The window surface should be cleaned before using the device. If dry cloth or dry cotton swab is used to rub the window surface,

static electricity may be generated, and therefore this practice should be avoided. Use soft cloth, cotton swab or soft paper

moistened with ethyl alcohol to wipe off dirt and foreign matter on the window surface.

(3) UV exposure

The CMOS linear image sensor is designed to suppress performance deterioration due to UV exposure. Even so, avoid unnecessary

UV exposure to the device.

Also, be careful not to allow UV light to strike the cemented portion between the ceramic base and the glass.

(4) Operating and storage environments

Always observe the rated temperature range when handling the device. Operating or storing the device at an excessively high

temperature and humidity may cause variations in performance characteristics and must be avoided.

Related information

www.hamamatsu.com/sp/ssd/doc_en.html

Precautions

∙ Notice

∙ Image sensors/Precautions

Information described in this material is current as of February, 2014.

Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the

information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always

The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that

one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.

Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

www.hamamatsu.com

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741

China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866

Cat. No. KMPD1066E09 Feb. 2014 DN

S8377_15 [HAMAMATSU]

相关型号：

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