S8550 [HAMAMATSU]
4 】 8 element APD array with low noise and enhanced short-wavelength sensitivity; 4×8元素的APD阵列具有低噪声和增强短波长的灵敏度
| 型号： | S8550 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | 4 】 8 element APD array with low noise and enhanced short-wavelength sensitivity |
| 文件： | 总2页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A P D
Si APD array
S8550
4 × 8 element APD array with low noise and enhanced short-wavelength sensitivity
S8550 is an APD (avalanche photodiode) array designed for short wavelength detection, featuring low noise and low terminal capacitance. S8550
also offers uniform gain and small cross-talk between each element.
Features
Applications
High sensitivity and low noise in short wavelength region
Low terminal capacitance
Low-light-level photometry in the visible range
Detector systems combined with scintillator
Optimized for blue light detection
Uniform gain and low cross-talk variation between
each element
ꢀ General ratings
Parameter
Element size
Element pitch
Package
Rating
1.6 × 1.6 (× 32 elements)
2.3
Unit
mm
mm
-
Ceramic
Window material
Epoxy resin
-
ꢀ Absolute maximum ratings
Parameter
Operating temperature
Storage temperature
Symbol
Topr
Tstg
Value
-20 to +60
-20 to +80
Unit
°C
°C
ꢀ Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response range
Peak sensitivity wavelength
Quantum efficiency
Breakdown voltage
Dark current
Symbol
Condition
Min.
-
-
60
-
-
Typ.
320 to 1000
600
Max.
-
-
Unit
nm
nm
%
V
nA
λ
λp
QE
VBR
ID
M=50
70
400
10
-
λ=420 nm
500
50
per 1 element, M=50
per 1 element, M=50,
f=10 kHz
Terminal capacitance
Gain
Ct
M
-
-
10
50
-
-
pF
-
1
Si APD array S8550
ꢀꢀQuantum efficiency vs. wavelength
ꢀꢀGain vs. reverse voltage
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C, λ=420 nm)
100
1000
100
10
80
60
40
20
0
1
200
400
600
800
1000
1200
0
100
200
300
400
WAVELENGTH (nm)
REVERSE VOLTAGE (V)
KAPDB0059EA
KAPDB0063EA
ꢀꢀDimensional outline (unit: mm)
19.50
15.24
2.30
ARRAY 2
0.9
1.27
f
A4 B4 C4 D4 E4 F4 G4 H4
A3 B3 C3 D3 E3 F3 G3 H3
e
d
c
b
a
A2 B2 C2 D2 E2 F2 G2 H2
A1 B1 C1 D1 E1 F1 G1 H1
13 12 11 10 9 8 7 6 5 4 3 2 1
PHOTOSENSITIVE
SURFACE
INDEX MARK
ACTIVE AREA
ARRAY 1
1.6 × 1.6 (ANODE)
Pin No. Element No. Pin No. Element No. Pin No. Element No. Pin No. Element No.
1a
3a
5a
7a
9a
11a
13a
2b
CATHODE 1
B1
C2
D2
E2
G1
H1
A2
C1
6b
8b
10b
12b
1c
D1
E1
F1
G2
A1
B2
F2
H2
A3
3d
11d
13d
2e
4e
6e
8e
10e
12e
C3
G3
H4
B3
C4
D4
E4
F4
H3
1f
3f
5f
7f
9f
A4
B4
D3
E3
F3
1.27
15.24
3c
11f
13f
G4
CATHODE 2
11c
13c
1d
4b
CATHODE 1: CATHODE OF ARRAY 1
CATHODE 2: CATHODE OF ARRAY 2
KAPDA0023EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KAPD1009E02
Jun. 2006 DN
2
相关型号：
S8550-AP
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
S8550-B-BP
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
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