S9037-0902N_技术文档

I M A G E S E N S O R

CCD image sensor

S9037/S9038 series

High-speed operation, back-thinned FFT-CCD

S9037/S9038 series FFT-CCD image sensors were developed for high-speed line scan cameras. Since an on-chip amplifier having a wide

bandwidth is used to an image sensor, a pixel rate of 10 MHz can be obtained. S9037/S9038 series image sensors also deliver a high line scan

rate equivalent to interline CCD sensors when used in line binning operation mode, because they have an active area pixel format where the

number of vertical pixels is less than the number of horizontal pixels. This makes S9037/S9038 series ideal for line scan cameras.

S9037/S9038 series image sensors have a pixel size of 24 × 24 µm and are available in pixel formats of 512 × 4 pixels and 1024 × 4 pixels.

S9038 series has a one-stage thermoelectric cooler assembled in the same package allowing stable operation at cooled temperatures. Both

S9037/S9038 series image sensors use a quartz glass window equivalent to SUPRASIL glass that provides high transmittance even at 193 nm

wavelength. These image sensors also have stable quantum efficiency in the UV region making them ideal for excimer laser monitors.

Features

Applications

High-speed operation: 10 MHz

Pixel size: 24 × 24 µm

Excimer laser monitors

High-speed line scan cameras

Line/pixel binning operation

S9038 series: one-stage thermoelectric cooling

High quantum efficiency: 90 % or more at peak

MPP operation

ꢀ Selection guide

Type No.

Active area

[mm (H) × mm (V)]

12.288 × 0.096

24.576 × 0.096

12.288 × 0.096

24.576 × 0.096

Cooling

Non-cooled

Number of total pixels Number of active pixels

S9037-0902

S9037-1002

S9038-0902

S9038-1002

520 × 6

1044 × 8

520 × 6

512 × 4

1024 × 4

512 × 4

One-stage TE-cooled

1044 × 8

1024 × 4

ꢀ Specifications

Parameter

S9037-0902

16 kHz

S9037-1002

8 kHz

S9038-0902

16 kHz

S9038-1002

8 kHz

Line rate

Data rate

Vertical clock

Horizontal clock

Output circuit

Package

10 MHz

2 phases

Two-stage MOSFET source follower

24 pin metal package

Quartz window equivalent to SUPRASIL *¹

Window material

*1: Windowless type is available as option.

1

CCD image sensor S9037/S9038 series

Absolute maximum ratings (Ta=25 °C)

ꢀꢀ

Parameter

Operating temperature

Storage temperature

OD voltage

RD voltage

ISH voltage

IGH voltage

SG voltage

OG voltage

RG voltage

TG voltage

Vertical clock voltage

Horizontal clock voltage

Symbol

Topr

Tstg

Min.

-50

-0.5

-10

Typ.

Max.

+70

+25

+18

+15

Unit

°C

V

-

OD

V

RD

V

ISH

V

IG1H

IG2H

, V

V

SG

V

OG

V

RG

TG

V

P1V

P2V

P2H

V

, V

P1H

, V

Operating conditions (MPP mode, Ta=25 °C)

ꢀꢀ

Parameter

Output transistor drain voltage

Reset drain voltage

Symbol

Min.

12

11.5

1

Typ.

15

12

3

Max.

-

12.5

5

Unit

V

OD

V

RD

V

OG

V

Output gate voltage

V

SS

V

Substrate voltage

-

0

-

V

ISH

RD

Test point (horizontal input source)

Test point (horizontal input gate)

Vertical shift register

clock voltage

Horizontal shift register

clock voltage

V

IG1H

-

-8

4

-9

4

-9

4

-9

4

-9

4

V

-

8

-7

8

-7

8

-7

8

-7

8

-7

V

IG2H

P2VH

P2VL

P2HH

P2HL

V

, V

0

6

-8

6

-8

6

-8

6

P1VH

P1VL

High

Low

High

Low

High

Low

High

Low

High

Low

V

P1HH

P1HL

V

SGH

V

Summing gate voltage

Reset gate voltage

SGL

RGH

RGL

-8

6

-8

TGH

Transfer gate voltage

TGL

V

-9

Electrical characteristics (Ta=25 °C)

ꢀꢀ

Parameter

Signal output frequency

Symbol

fc

Remark

Min.

Typ.

-

300

500

200

300

7

15

0.99995

7

500

100

Max.

Unit

MHz

pF

-

10

-

Reset clock frequency

frg

-0902

-1002

-0902

-1002

P1V P2V

, C

Vertical shift register capacitance

C

P1H

P2H

, C

Horizontal shift register capacitance

C

SG

Summing gate capacitance

Reset gate capacitance

Transfer gate capacitance

Transfer efficiency

DC output level

Output impedance

C

RG

TG

2

CTE

Vout

Zo

*

-

V

Ω

mW

3

*

Power dissipation

P

*^3,*⁴

*2: Charge transfer efficiency per pixel, measured at half of the full well capacity.

*3: This depends on the output transistor drain voltage.

*4: Power dissipation of the on-chip amplifier.

2

CCD image sensor S9037/S9038 series

ꢀ Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)

Min.

Parameter

Saturation output voltage

Symbol

Vsat

Typ.

Fw × Sv

300

600

1.2

4,000

200

100

Max.

Unit

V

Vertical

Horizontal (summing)

-

10

-

Full well capacity

Fw

Sv

ke^-

CCD node sensitivity

µV/e^-

Dark current *⁵

(MPP mode)

Readout noise *⁶

25 °C

0 °C

DS

e^-/pixel/s

Nr

DR

PRNU

λ

e^-rms

-

%

nm

Dynamic range (line binning)

Photo response non-uniformity *⁷

Spectral response range (without window)

6000

-

200 to 1100

*5: Dark current nearly doubles for every 5 to 7 °C increase in temperature.

*6: -40 °C, operating frequency is 80 kHz.

*7: Condition: half of saturation output voltage.

ꢀ Spectral response

ꢀ Spectral response of photosensitive surface

(without cap)

(Typ. Ta=25 ˚C)

100

90

80

70

60

50

40

120

BACK-THINNED

100

80

60

40

20

0

FRONT-ILLUMINATED

(UV COAT)

30

20

FRONT-ILLUMINATED

10

0

200

400

600

800

1000

1200

100

120

140

160

180

200

WAVELENGTH (nm)

KMPDB0058EA

KMPDB0150EA

ꢀ Dark current vs. temperature

(Typ.)

10000

1000

100

10

1

0.1

-50

-40 -30

-20 -10

0

10

20

30

TEMPERATURE (˚C)

KMPDB0037EB

3

CCD image sensor S9037/S9038 series

ꢀ Device structure

S9037/S9038-0902

THINNING

SS

P1V

P2V

TG

RG

RD

ISH

OD

1

OS

OG

SG

P2H P1H

IG2H

IG1H

4 BLANK

512 ACTIVE

4 BLANK

KMPDC0159EC

S9037/S9038-1002

THINNING

SS

P1V

P2V

TG

RG

RD

ISH

OD

1

OS

OG

SG

P2H P1H

IG2H

IG1H

4 BLANK

6 BEVEL

1024 ACTIVE

4 BLANK

6 BEVEL

KMPDC0160EB

4

CCD image sensor S9037/S9038 series

ꢀꢀTiming chart (line binning)

INTEGRATION PERIOD

VERTICAL BINNING PERIOD

Tpwv

READOUT PERIOD

INTEGRATION PERIOD

P1V

P2V, TG

Tpwh, Tpws

P1H

P2H

SG

Tpwr

RG

Vos

KMPDC0161EÁ

Parameter

Symbol

Min.

1

-

50

-

50

-

5

3

Typ.

-

20

-

10

50

-

10

50

15

-

Max.

Unit

µs

ns

%

ns

%

Pulse width

Rise and fall time

Pulse width

Rise and fall time

Duty ratio

Pulse width

Rise and fall time

Duty ratio

Pulse width

Rise and fall time

Overlap time

Tpwv

Tprv, Tpfv

Tpwh

Tprh, Tpfh

-

Tpws

Tprs, Tpfs

-

P1V, P2V, TG

P1H, P2H

SG

Tpwr

Tprr, Tpfr

Tovr

ns

µs

RG

TG (P2V) - P1H

-

5

CCD image sensor S9037/S9038 series

ꢀ Dimensional outlines (unit: mm)

S9037-0902

S9037-1002

WINDOW 16.3

WINDOW 28.6

ACTIVE AREA

12.29

ACTIVE AREA 24.58

2.54

34.0

2.54

44.0

INDEX MARK

PIN No. 1

INDEX MARK

PIN No. 1

PHOTOSENSITIVE SURFACE

(24 ×) 0.5

KMPDA0153EB

KMPDA0154EA

S9038-0902

S9038-1002

WINDOW 16.3

WINDOW 28.6

ACTIVE AREA

12.29

ACTIVE AREA 24.58

2.54

44.0

2.54

34.0

52.0

42.0

60.0

50.0

INDEX MARK

PIN No. 1

INDEX MARK

PIN No. 1

PHOTOSENSITIVE SURFACE

TE-COOLER

(24 ×) 0.5

KMPDA0155EA

KMPDA0156EA

6

CCD image sensor S9037/S9038 series

ꢀ Dimensional outlines of windowless types (unit: mm)

S9037-0902N

S9037-1002N

WINDOW 28.6

WINDOW 16.3

ACTIVE AREA

12.29

ACTIVE AREA 24.58

2.54

34.0

2.54

44.0

INDEX MARK

PIN No. 1

INDEX MARK

PIN No. 1

PHOTOSENSITIVE SURFACE

(24 ×) 0.5

KMPDA0165EA

KMPDA0166EA

S9038-0902N

S9038-1002N

WINDOW 16.3

WINDOW 28.6

ACTIVE AREA

12.29

ACTIVE AREA 24.58

2.54

44.0

2.54

34.0

52.0

42.0

60.0

50.0

INDEX MARK

PIN No. 1

INDEX MARK

PIN No. 1

PHOTOSENSITIVE SURFACE

TE-COOLER

(24 ×) 0.5

KMPDA0167EA

KMPDA0168EA

P in connections

ꢀꢀ

P in

S 9037 series

S 9038 series

D escription

R eset

R em ark

N o.

S ym bol

R D

O S

O D

O G

D escription

drain

S ym bol

1

2

3

4

R eset

+ 12

Ω

V R D

drain

+ 12

V

O utput transistor source

O utput transistor drain

O utput gate

External R

2

=2.2 k

O S

O D

O G

O utput transistor source

O utput transistor drain

O utput gate

External R

L

=2.2 k

Ω

+ 15 V

+ 3 V

+ 15 V

+ 3 V

Sam e tim ing as

P2H

Sam e tim ing as

P2H

5

S G

S um m ing gate

S G

S um m ing gate

6

7

8

9

-

P 2H

P 1H

P 2H

P 1H

C C D horizontal register clock-2

C C D horizontal register clock-1

Test point (horizontal input

gate-2)

Test point (horizontal input

gate-1)

C C D horizontal register clock-2

C C D horizontal register clock-1

Test point (horizontal input

gate-2)

Test point (horizontal input

gate-1)

10

11

12

13

IG 2H

IG 1H

IS H

G N D

IG 2H

IG 1H

IS H

G N D

Test point (horizontal input

source)

Test point (horizontal input

source)

S horted to R D

Sam e tim ing as

P2V

Sam e tim ing as

P2V

TG

Transfer gate

14

15

16

17

18

19

20

21

22

23

24

P 2V

P 1V

N C

P 2V

P 1V

Th1

Th2

P -

C C D vertical register clock-2

C C D vertical register clock-1

C C D vertical register clock-2

C C D vertical register clock-1

Therm istor

TE -cooler-

N C

P +

TE -cooler+

S ubstrate (G N D )

S S

N C

S ubstrate (G N D )

R eset gate

G N D

S S

N C

R G

R eset gate

7

CCD image sensor S9037/S9038 series

ꢀ Specifications of built-in TE-cooler (Typ.)

Parameter

Internal resistance

Maximum current *⁸

Symbol

Condition

S9038-0902

S9038-1002

Unit

Ω

Rint Ta=25 °C

Imax Tc *⁹=Th *¹⁰=25 °C

Vmax Tc *⁹=Th *¹⁰=25 °C

Qmax

2.5

1.5

3.8

3.4

1.2

3.0

3.6

5.1

A

V

W

Maximum voltage

11

M axim um heat absorption

Maximum temperature

of heat radiating side

*

-

70

°C

*8: Maximum current Imax:

If the current greater than this value flows into the thermoelectric cooler, the heat absorption begins to decrease due to the

Joule heat. It should be noted that this value is not the damage threshold value. To protect the thermoelectric cooler and

maintain stable operation, the supply current should be less than 60 % of this maximum current.

*9: Temperature of the cooling side of thermoelectric cooler.

*10: Temperature of the heat radiating side of thermoelectric cooler.

*11: Maximum heat absorption Qmax.

This is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the

maximum current is supplied to the unit.

S9038-0902

S9038-1002

(Typ. Ta=25 ˚C)

7

6

5

4

3

2

1

0

30

20

10

0

7

6

5

4

3

2

1

0

30

20

10

0

VOLTAGE vs. CURRENT

CCD TEMPERATURE vs. CURRENT

VOLTAGE vs. CURRENT

CCD TEMPERATURE vs. CURRENT

-10

-20

-30

-40

-10

-20

-30

-40

0

0.5

1.0

1.5

2.0

0

1

2

3

4

CURRENT (A)

KMPDB0178EA

KMPDB0179EA

Specifications of built-in temperature sensor

ꢀꢀ

A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation

between the thermistor resistance and absolute temperature is expressed by the following equation.

(Typ. Ta=25 ˚C)

1 MΩ

R1 = R2 × expB (1 / T1 - 1 / T2)

where R1 is the resistance at absolute temperature T1 (K)

R2 is the resistance at absolute temperature T2 (K)

B is so-called the B constant (K)

The characteristics of the thermistor used are as follows.

R (298K) = 10 kΩ

100 kΩ

B (298K / 323K) = 3450 K

10 kΩ

220

240

260

280

300

TEMPERATURE (K)

KMPDB0111EA

8

CCD image sensor S9037/S9038 series

ꢀꢀPrecaution for use (Electrostatic countermeasures)

ꢀ Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing and use a wrist band

with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction.

ꢀ Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.

ꢀ Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to

discharge.

ꢀ Ground the tools used to handle these sensors, such as tweezers and soldering irons.

It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the

amount of damage that occurs.

ꢀꢀElement cooling/heating temperature incline rate

Element cooling/heating temperature incline rate should be set at less than 5 K/min.

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658

France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

Cat. No. KMPD1067E03

Jan. 2004DN

9


型号：	S9037-0902N
厂家：	HAMAMATSU CORPORATION
描述：	Image Sensor, DIP-24
文件：	总9页 (文件大小：186K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

S9037-0902N [HAMAMATSU]

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