S9717 [HAMAMATSU]
Si APD High reliability, surface-mount ceramic package; 硅APD高可靠性，表面贴装陶瓷封装
| 型号： | S9717 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | Si APD High reliability, surface-mount ceramic package |
| 文件： | 总2页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P H O T O D I O D E
Si APD
S9717 series
High reliability, surface-mount ceramic package
S9717 series are Si APD (avalanche photodiodes) encapsulated in a surface-mount ceramic package that ensures high reliability in the same
wide operating temperature range (-20 to +85 ˚C) as metal package devices. S9717 series also allows downsizing of equipment in various
photometric application fields.
Features
Applications
Rangefinder
Laser rader
Surface-mount package with high reliability equivalent to
metal package
Spatial light transmission
(No dark current increase after high temperature/humidity
testing at 85 ˚C, 85 % for 1000 hours.)
Small, thin package: 3.5 × 4.0 mm
S9717-02K/-05K: Flat glass window
S9717-05L: Lens glass window
■ General ratings
Parameter
Active area size
S9717-02K
S9717-05K
S9717-05L
Unit
mm
φ0.2
φ0.5
φ0.5
Borosilicate glass,
Window material
Borosilicate glass
-
φ0.8 lens
■ Absolute maximum ratings
Parameter
Operating temperature
Storage temperature
Symbol
Topr
Tstg
Value
-20 to +85
-55 to +125
Unit
°C
°C
■ Electrical and optical characteristics (Typ. Ta=25 °C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Symbol
Condition
S9717-02K
S9717-05K
400 to 1000
S9717-05L
Unit
nm
nm
λ
λp
S
M=100
λ=800 nm, M=1
800
0.5
A/W
Typ.
Max.
150
200
0.65
100
1000
3
Breakdown voltage
Temp. coefficient of VBR
Dark current
VBR
-
ID=100 µA
V
V/°C
pA
Typ.
Max.
M=100, f=1 MHz
M=100, RL=50 Ω
λ=800 nm, -3 dB
M=100
50
500
1.5
100
1000
3
ID
M=100
Terminal capacitance
Cut-off frequency
Ct
fc
pF
1000
900
900
MHz
Excess noise figure
Gain
x
M
0.3
100
-
-
λ=800 nm
1
Si APD S9717 series
■ Spectral response
■ Dark current vs. reverse voltage
(Typ. Ta=25 ˚C, λ=800 nm)
(Typ. Ta=25 ˚C)
50
1 nA
100 pA
10 pA
1 pA
M=100
40
30
S9717-05K/-05L
M=50
20
S9717-02K
10
0
200
400
600
800
1000
0
50
100
150
200
WAVELENGTH (nm)
REVERSE VOLTAGE (V)
KAPDB0020EB
KAPDB0101EA
■ Gain vs. reverse voltage
(Typ. λ=800 nm)
10000
20 ˚C
0 ˚C
1000
-20 ˚C
100
10
40 ˚C
60 ˚C
1
80
100
120
140
160
180
REVERSE VOLTAGE (V)
KAPDB0017EC
■ Dimensional outlines (uint: mm)
S9717-02K/-05K
S9717-05L
(3 ×) 0.8
(3 ×) 0.8
3.5 ± 0.2
3.5 ± 0.2
ACTIVE AREA
LENS
1.27
(6 ×) R0.15
2.54
1.27
(6 ×) R0.15
2.54
3.3
1.4
3.3
0.8
ANODE
CATHODE
GND
ANODE
CATHODE
GND
KAPDA0032EA
KAPDA0033EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KAPD1014E02
Mar. 2006 DN
2
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