S9970-1008 [HAMAMATSU]
CCD area image sensor Low dark signal · low readout noise/front-illuminated FFT-CCD; CCD面积图像传感器低暗信号·低读出噪声/前照式FFT - CCD
| 型号： | S9970-1008 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | CCD area image sensor Low dark signal · low readout noise/front-illuminated FFT-CCD |
| 文件： | 总10页 (文件大小：298K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
I M A G E S E N S O R
CCD area image sensor
S9970/S9971 series
Low dark signal · low readout noise/front-illuminated FFT-CCD
S9970/S9971 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications.
S9970/S9971 series offer lower dark current and lower readout noise than S7010/S7011 series that have been marketed. By using the binning
operation, S9970/S9971 series can be used as a linear image sensor having a long aperture in the direction of the device length. This makes
S9970/S9971 series ideally suited for use in spectrophotometry. The binning operation offers significant improvement in S/N and signal
processing speed compared with conventional methods by which signals are digitally added by an external circuit. S9970/S9971 series also
feature low noise and low dark signal (MPP mode operation). This enables low-light-level detection and long integration time, thus achieving a
wide dynamic range.
S9970/S9971 series have an effective pixel size of 24 × 24 µm and are available in image areas ranging from 12.288 (H) × 1.44 (V) mm2 (512 ×
60 pixels) up to a large image area of 24.576 (H) × 6.048 (V) mm2 (1024 × 252 pixels). S9970/S9971 series are pin compatible with S7010/S7011
series. (Operating conditions are a little bit changed from S7010/S7011 series.)
Features
Applications
-
Low dark signal: 10 e /pixel/s Typ. (0 ˚C, MPP mode)
Fluorescence spectrometer, ICP
Raman spectrometer
-
Low readout noise: 4 e rms Typ.
512 (H) × 60 (V) to 1024 (H) × 252 (V) pixel format
Pixel size: 24 × 24 µm
Line/pixel binning
Industrial inspection requiring
Semiconductor inspection
DNA sequencer
100 % fill factor
Low-light-level detection
Wide dynamic range
MPP operation
ꢀ Selection guide
Suitable
multichannel
Detector head
Number of
total pixels
Number of
active pixels
Active area
[mm (H) × mm (V)]
Type No.
Cooling
S9970-0906
S9970-1006
S9970-1007
S9970-1008
S9971-0906
S9971-1006
S9971-1007
S9971-1008
532 × 64
1044 × 64
1044 × 128
1044 × 256
532 × 64
1044 × 64
1044 × 128
1044 × 256
512 × 60
1024 × 60
1024 × 124
1024 × 252
512 × 60
1024 × 60
1024 × 124
1024 × 252
12.288 × 1.440
24.576 × 1.440
24.576 × 2.976
24.576 × 6.048
12.288 × 1.440
24.576 × 1.440
24.576 × 2.976
24.576 × 6.048
Non-cooled
C7020
C7021
C7025
One-stage
TE-cooled
ꢀ General ratings
Parameter
Specification
24 (H) × 24 (V) µm
2 phase
Pixel size
Vertical clock phase
Horizontal clock phase
Output circuit
2 phase
One-stage MOSFET source follower
Package
24 pin ceramic DIP (refer to dimensional outlines)
S9970 series: quartz glass
Window *1
S9971 series: sapphire glass
*1: Temporary window type (ex. S9970-0906N) and UV coat type (ex. S9970-0906UV) are available upon request.
(Temporary window is fixed by tape to protect the CCD chip and wire bonding.)
1
CCD area image sensor S9970/S9971 series
ꢀꢀAbsolute maximum ratings (Ta=25 °C)
Parameter
Operating temperature
Storage temperature
OD voltage
RD voltage
ISV voltage
ISH voltage
IGV voltage
IGH voltage
SG voltage
OG voltage
RG voltage
TG voltage
Vertical clock voltage
Horizontal clock voltage
Symbol
Topr
Tstg
Min.
-50
-50
-0.5
-0.5
-0.5
-0.5
-15
-15
-15
-15
-15
-15
-15
-15
Typ.
Max.
+30
+70
+25
+18
+18
+18
+15
+15
+15
+15
+15
+15
+15
+15
Unit
°C
°C
V
V
V
V
V
V
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
OD
V
RD
V
ISV
V
ISH
V
IG1V
IG1H
V
V
V
V
P1V
IG2V
V
V
, V
, V
SG
OG
RG
TG
, V
, V
IG2H
V
V
V
V
P2V
P2H
V
V
P1H
V
ꢀꢀOperating conditions (MPP mode, Ta=25 °C)
Parameter
Output transistor drain voltage
Reset drain voltage
Symbol
Min.
18
11.5
1
Typ.
20
12
3
Max.
Unit
V
V
OD
V
22
12.5
5
RD
V
OG
Output gate voltage
V
V
SS
Substrate voltage
V
-
0
-
V
ISV
RD
Test point (vertical input source)
Test point (horizontal input source)
Test point (vertical input gate)
Test point (horizontal input gate)
Vertical shift register
clock voltage
V
V
-
-
V
V
-
-
-
-
6
-7
6
-7
6
-7
6
V
V
V
V
ISH
RD
IG1V
IG2V
IG2H
P2VH
P2VL
P2HH
P2HL
V
V
V
V
V
V
, V
, V
, V
, V
, V
, V
-8
-8
0
-9
0
-9
0
-9
0
0
0
4
-8
4
-8
4
-8
4
-8
4
IG1H
P1VH
High
Low
High
Low
High
Low
High
Low
High
Low
V
V
V
V
V
P1VL
P1HH
Horizontal shift register
clock voltage
P1HL
SGH
SGL
V
V
V
V
V
Summing gate voltage
Reset gate voltage
RGH
RGL
TGH
TGL
-9
0
-9
-7
6
-7
Transfer gate voltage
V
-8
ꢀꢀElectrical characteristics (Ta=25 °C)
Parameter
Signal output frequency
Symbol
fc
Remark
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.1
Max.
1
-
Unit
MHz
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S9970/S9971-0906
750
1500
3000
6000
100
180
180
180
7
7
60
100
100
100
S9970/S9971-1006
S9970/S9971-1007
S9970/S9971-1008
S9970/S9971-0906
S9970/S9971-1006
S9970/S9971-1007
S9970/S9971-1008
Vertical shift register
capacitance
P1V
P2V
C
, C
, C
pF
pF
-
Horizontal shift register
capacitance
P1H
P2H
C
SG
RG
Summing gate capacitance
Reset gate capacitance
C
C
-
-
-
pF
pF
S9970/S9971-0906
S9970/S9971-1006
S9970/S9971-1007
S9970/S9971-1008
Transfer gate
capacitance
TG
C
pF
2
Transfer efficiency
DC output level
Output impedance
Power dissipation
CTE
Vout
Zo
*
*
*
3,
0.99995
0.99999
-
18
-
-
V
kΩ
mW
3
12
-
-
15
3
15
3
4
P
*
*
-
*2: Charge transfer efficiency per pixel, measured at half of the full well capacity.
OD
*3: The values depend on the load resistance. (V =20 V, Load resistance=22 kΩ)
*4: Power dissipation of the on-chip amplifier.
2
CCD area image sensor S9970/S9971 series
ꢀꢀElectrical and optical characteristics (Ta=25 °C, unless otherwise noted)
Parameter
Symbol
Remark
Min.
Typ.
Fw × Sv
Max.
-
Unit
V
Saturation output voltage
Vsat
-
-
Vertical
Horizontal
CCD node sensitivity
150
300
-
-
-
-
300
600
3.5
200
10
4
150000
75000
-
-
-
Full well
capacity
-
Fw
Sv
DS
Nr
-
-
ke
-
µV/e
5
*
+25 °C
0 °C
3000
Dark current
(MPP mode)
Readout noise
-
6
*
e /pixel/s
150
18
-
-
7
*
e rms
Line binning
Area scanning
16666
8333
8
Dynamic range
*
-
-
Spectral response range
Photo response non-uniformity
Point defects
λ
-
*
10
-
-
-
-
-
400 to 1100
-
10
0
0
0
nm
%
9
PRNU
-
-
-
-
*
*
*
11
Blemish
Cluster defects
Column defects
-
-
12
*5: VOD=20 V , Load resistance=22 kΩ
*6: Dark current nearly doubles for every 5 to 7 °C increase in temperature.
*7: -40 °C, operating frequency is 80 kHz.
*8: DR = Fw / Nr
*9: Measured at half of the full well capacity. PRNU = noise / signal × 100 [%], noise: fixed pattern noise (peak to peak)
*10: White spots > 3 % of full well at 0 °C after Ts=1 s
Black spots
Pixels whose sensitivity is lower than one-half of the average pixel output. (Measured with uniform light producing one-
half of the saturation charge)
*11: 2 to 9 contiguous defective pixels
*12: 10 or more contiguous defective pixels
ꢀꢀSpectral response (without window)
ꢀꢀSpectral transmittance characteristics
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
100
90
80
70
60
50
40
30
20
50
40
30
20
10
0
QUARTZ WINDOW
SAPPHIRE WINDOW
UV COAT
10
0
100 200 300 400 500 600 700 800 900 1000
200 300 400 500 600 700 800 900 100011001200
WAVELENGTH (nm)
WAVELENGTH (nm)
KMPDB0244EB
KMPDB0101EA
3
CCD area image sensor S9970/S9971 series
ꢀꢀDevice structure, line output format
IG2V ISV
IG1V
24
SS
20
P1V
15
TG
16
P2V
14
22
23
V
1
V=60, 124, 252
H=512, 1024
......
......
H
RG
RD
OS
1
2
3
13
ISH
12 IG1H
6
4
5
9
10
11
IG2H
512 or
1024
SG
OD OG
2 ISOLATION
2 ISOLATION
P2H P1H
4 OPTICAL
BLACK
SIGNAL OUT
4 OPTICAL
BLACK
4 BLANK
4 BLANK
KMPDC0015EB
Pixel format
Left ← Horizontal Direction → Right
Blank
4
Optical Black
4
Isolation
Effective
512 or 1024
Isolation
Optical Black
4
Blank
4
2
2
Top ← Vertical Direction → Bottom
Isolation
2
Effective
60, 124 or 252
Isolation
2
ꢀꢀTiming chart
Line binning
INTEGRATION PERIOD
(Shutter must be open)
VERTICAL BINNING PERIOD
(Shutter must be closed)
3.. 62 63
READOUT PERIOD (Shutter must be closed)
64← 60 + 4 (ISOLATION): S9970/1-0906/-1006
128← 124 + 4 (ISOLATION): S9970/1-1007
256← 252 + 4 (ISOLATION): S9970/1-1008
3..126 127
3..254 255
Tpwv
1
2
P1V
Tovr
P2V, TG
P1H
4..530 531
4..1042 1043
532 : S9970/1-0906
1044: S9970/1-1006/-1007/-1008
Tpwh, Tpws
1
2
3
P2H, SG
Tpwr
D1
RG
OS
D2
S1..S512
D19
D20: S9970/1-0906
D3..D10, S1..S1024, D11..D18
: S9970/1-1006/-1007/-1008
KMPDC0227EA
4
CCD area image sensor S9970/S9971 series
Area scanning 1: low dark current mode
INTEGRATION PERIOD
(Shutter must be open)
READOUT PERIOD (Shutter must be closed)
64← 60 + 4 (ISOLATION): S9970/1-0906/-1006
128←124 + 4 (ISOLATION): S9970/1-1007
256←252 + 4 (ISOLATION): S9970/1-1008
4.. 63
4..127
4..255
Tpwv
1
2
3
P1V
P2V, TG
P1H
P2H, SG
RG
OS
Tovr
P2V, TG
ENLARGED VIEW
Tpwh, Tpws
P1H
P2H, SG
RG
Tpwr
D1
OS
S1..S512
D5..D10, S1..S1024, D11..D17
D2
D3
D4
D18
D19
D20: S9970/1-0906
: S9970/1-1006/-1007/-1008
KMPDC0228EA
Area scanning 2: large full well mode
INTEGRATION PERIOD
READOUT PERIOD (Shutter must be closed)
(Shutter must be open)
4.. 63 64← 60 + 4 (ISOLATION): S9970/1-0906/-1006
4..127 128←124 + 4 (ISOLATION): S9970/1-1007
4..255 256←252 + 4 (ISOLATION): S9970/1-1008
Tpwv
1
2
3
P1V
P2V, TG
P1H
P2H, SG
RG
OS
Tovr
P2V, TG
ENLARGED VIEW
Tpwh, Tpws
P1H
P2H, SG
RG
Tpwr
D1
OS
D2
D3
D4
S1..S512
D18
D19
D20: S9970/1-0906
D5..D10, S1..S1024, D11..D17
: S9970/1-1006/-1007/-1008
KMPDC0229EA
Parameter
Symbol
Tpwv
Remark
Min.
1.5
3.0
6.0
12
200
500
10
-
500
10
-
100
5
Typ.
4.5
9.0
18
36
-
5000
-
50
5000
-
Max.
Unit
S9970/S9971-0906
S9970/S9971-1006
S9970/S9971-1007
S9970/S9971-1008
-
-
-
-
-
-
-
-
-
-
-
-
-
-
13
Pulse width
*
µs
P1V, P2V, TG
Rise and fall time
Pulse width
Rise and fall time
Duty ratio
Pulse width
Rise and fall time
Duty ratio
Pulse width
Rise and fall time
Overlap time
Tprv, Tpfv
Tpwh
Tprh, Tpfh
-
Tpws
Tprs, Tpfs
-
Tpwr
Tprr, Tpfr
Tovr
-
-
ns
ns
ns
%
ns
ns
%
ns
ns
µs
13
P1H, P2H
SG
*
-
14
*
-
-
50
500
-
RG
-
-
TG - P1H
3
6
*13: The clock pulses should be overlapped at 50 % of clock pulse amplitude.
*14: P2H and SG should have the same electrical specifications.
5
CCD area image sensor S9970/S9971 series
ꢀꢀDimensional outlines (unit: mm)
S9970-0906
PHOTOSENSITIVE
SURFACE
a
1.1 ± 0.3
31.75 ± 0.3
1st PIN INDICATION PAD
PHOTOSENSITIVE SURFACE
0.46
2.54
27.94
KMPDA0193EA
S9970-1006/-1007
PHOTOSENSITIVE
SURFACE
a
1.1 ± 0.3
40.64 ± 0.41
1st PIN INDICATION PAD
PHOTOSENSITIVE SURFACE
0.46
2.54
27.94
KMPDA0194EA
S9970-1008
PHOTOSENSITIVE
SURFACE
a
1.1 ± 0.3
40.64 ± 0.41
1st PIN INDICATION PAD
Active area
Type No.
PHOTOSENSITIVE SURFACE
a
b
S9970-0906 12.288 (H)
S9970-1006 24.576 (H)
S9970-1007 24.576 (H)
S9970-1008 24.576 (H)
1.440 (V)
1.440 (V)
2.976 (V)
6.048 (V)
0.46
2.54
27.94
KMPDA0195EA
6
CCD area image sensor S9970/S9971 series
S9971-0906
a
3.2 ± 0.4
5.0
32.0 ± 0.3
50.0
1st PIN INDICATION PAD
PHOTOSENSITIVE SURFACE
TE-COOLER
0.46
2.54
KMPDA0196EA
27.94
S9971-1006/-1007
a
3.2 ± 0.4
5.0
40.64 ± 0.41
58.84
1st PIN INDICATION PAD
PHOTOSENSITIVE SURFACE
Active area
b
Type No.
a
c
S9971-0906 12.288 (H)
S9971-1006 24.576 (H)
S9971-1007 24.576 (H)
1.440 (V)
1.440 (V)
2.976 (V)
7.5
7.5
7.1
TE-COOLER
0.46
2.54
27.94
KMPDA0197EA
S9971-1008
WINDOW 28.6
ACTIVE AREA 24.576
2.54
44.0
52.0
60.0
1st PIN INDICATION PAD
PHOTOSENSITIVE SURFACE
TE-COOLER
(24×) 0.5
KMPDA0198EA
7
CCD area image sensor S9970/S9971 series
ꢀ Pin connections
S9970 series
Description
Reset gate
Reset drain
S9971 series
Remark
Pin No.
Symbol
Symbol
RG
RD
Description
1
2
RG
RD
Reset gate
Reset drain
3
4
5
OS
OD
OG
Output transistor source
Output transistor drain
Output gate
OS
OD
OG
Output transistor source
Output transistor drain
Output gate
6
SG
Summing gate
SG
Summing gate
Same timing as P2H
7
8
9
NC
NC
Th1
Th2
P2H
P1H
IG2H
IG1H
ISH
Thermistor
Thermistor
P2H
P1H
IG2H
IG1H
ISH
P2V
P1V
CCD horizontal register clock-2
CCD horizontal register clock-1
Test point (horizontal input gate-2)
Test point (horizontal input gate-1)
Test point (horizontal input source)
CCD vertical register clock-2
CCD horizontal register clock-2
CCD horizontal register clock-1
Test point (horizontal input gate-2)
Test point (horizontal input gate-1)
Test point (horizontal input source)
CCD vertical register clock-2
CCD vertical register clock-1
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Shorted to GND
Shorted to GND
Shorted to RD
P2V
P1V
CCD vertical register clock-1
TG *15 Transfer gate
NC
NC
NC
SS
NC
ISV
TG *15 Transfer gate
NC
Same timing as P2V
P-
P+
SS
TE-cooler-
TE-cooler+
Substrate (GND)
Substrate (GND)
NC
Test point (vertical input source)
Test point (vertical input gate-2)
Test point (vertical input gate-1)
ISV
IG2V
IG1V
Test point (vertical input source)
Test point (vertical input gate-2)
Test point (vertical input gate-1)
Shorted to RD
Shorted to GND
Shorted to GND
IG2V
IG1V
*15: TG is an isolation gate between vertical register and horizontal register. In standard operation, the same pulse as P2V should be
applied to TG.
ꢀ Specifications of built-in TE-cooler (Typ.)
Parameter
Internal resistance
Maximum current *16
Maximum voltage
Maximum heat
absorption *19
Symbol
Rint Ta=25 °C
Imax Tc *17=Th *18=25 °C
Vmax Tc *17=Th *18=25 °C
Condition
S9971-0906
S9971-1006/-1007
S9971-1008
Unit
Ω
2.8
1.5
4.4
6.0
1.5
8.8
1.2
3.0
3.6
A
V
Qmax
-
3.4
6.7
70
5.1
W
Maximum temperature
of hot side
°C
*16: Maximum current Imax:
If the current is greater than Imax, the heat absorption begins to decrease due to the Joule heat. It should be noted that this
value is not a damage threshold. To protect the thermoelectric cooler and maintain stable operation, the supply current should
be less than 60 % of this maximum current.
*17: Temperature of cool side of thermoelectric cooler
*18: Temperature of hot side of thermoelectric cooler
*19: Maximum heat absorption Qmax
This is a heat absorption when the maximum current is supplied to the TE-cooler.
8
CCD area image sensor S9970/S9971 series
ꢀꢀTE-cooler characteristics
S9971-0906
S9971-1006/-1007
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
5
4
3
2
1
0
10
8
20
10
0
20
10
0
VOLTAGE vs. CURRENT
CCD TEMPERATURE vs. CURRENT
VOLTAGE vs. CURRENT
CCD TEMPERATURE vs. CURRENT
6
4
-10
-20
-30
-10
-20
-30
2
0
0
0.5
1.0
1.5
2.0
0
0.5
1.0
1.5
2.0
CURRENT (A)
CURRENT (A)
KMPDB0176EB
KMPDB0177EB
S9971-1008
(Typ. Ta=25 ˚C)
7
6
5
4
3
2
1
0
30
20
10
0
VOLTAGE vs. CURRENT
CCD TEMPERATURE vs. CURRENT
-10
-20
-30
-40
0
1
2
3
4
CURRENT (A)
KMPDB0179EB
9
CCD area image sensor S9970/S9971 series
Specifications of built-in temperature sensor
ꢀꢀ
A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation
between the thermistor resistance and absolute temperature is expressed by the following equation.
1 MΩ
R1 = R2 × expB (1 / T1 - 1 / T2)
where R1 is the resistance at absolute temperature T1 (K)
R2 is the resistance at absolute temperature T2 (K)
B is so-called the B constant (K)
The characteristics of the thermistor used are as follows.
R (298K) = 10 kΩ
100 kΩ
B (298K / 323K) = 3450 K
10 kΩ
220
240
260
280
300
TEMPERATURE (K)
KMPDB0111EB
ꢀꢀPrecaution for use (Electrostatic countermeasures)
ꢀ Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist strap, in
order to prevent electrostatic damage due to electrical charges from friction.
ꢀ Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.
ꢀ Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to
discharge.
ꢀ Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the
amount of damage that occurs.
ꢀꢀElement cooling/heating temperature incline rate
When cooling the CCD by an externally attached cooler, set the cooler operation so that the temperature gradient (rate of
temperature change) for cooling or allowing the CCD to warm back is less than 5 K/minute.
Multichannel detector head (C7020, C7021, C7025)
Features
C7020: for S9970 series
C7021: for S9971-0906/-1006/-1007
C7025: for S9971-1008
Area scanning or full line-binnng operation
Readout frequency: 250 kHz
-
Readout noise: 20 e rms
∆T=50 ˚C (∆T changes by radiation method.)
Input
Symbol
VD1
VA1+
VA1-
VA2
VD2
Vp
VF
Value
+5 Vdc, 200 mA
+15 Vdc, +100 mA
-15 Vdc, -100 mA
+24 Vdc, 30 mA
+5 Vdc, 30 mA (C7021, C7025)
+5 Vdc, 2.5 A (C7021, C7025)
+12 Vdc, 100 mA (C7021, C7025)
HCMOS logic compatible
HCMOS logic compatible, 1 MHz
Supply
voltage
Master start
Master clock
φms
φmc
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KMPD1089E06
Feb. 2007 DN
10
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