HMD1M32M2G-7
更新时间：2024-09-18 06:01:41
品牌：HANBIT
描述：4Mbyte(1Mx32) Fast Page Mode, 1K Refresh, 72Pin SIMM, 5V Design
概述
规格参数
数据手册HMD1M32M2G-7 概述
4Mbyte(1Mx32) Fast Page Mode, 1K Refresh, 72Pin SIMM, 5V Design 4Mbyte （ 1Mx32 ）快速页面模式， 1K刷新， 72PIN SIMM ， 5V设计 DRAM
HMD1M32M2G-7 规格参数
| 生命周期： | Contact Manufacturer | 包装说明： | , |
| Reach Compliance Code： | unknown | 风险等级： | 5.75 |
| Base Number Matches： | 1 |
HMD1M32M2G-7 数据手册
通过下载HMD1M32M2G-7数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
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HMD1M32M2G
4Mbyte(1Mx32) Fast Page Mode, 1K Refresh, 72Pin SIMM, 5V Design
Part No. HMD1M32M2G
DESCRIPTION
The HMD1M32M2G is an 1M x 32 bits Dynamic RAM MODULE which is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin
SOJ package on single sides the printed circuit board with decoupling capacitors. The HMD1M32M2G is optimized for
application to the systems, which are required high density and large capacity such as main memory of the computers and an
image memory systems, and to the others, which are, requested compact size.
The HMD1M32M2G provides common data and outputs.
PIN ASSIGNMENT
Features
PIN SYMBOL PIN
SYMBOL
PIN SYMBOL
1
2
Vss
DQ0
DQ16
DQ1
DQ17
DQ2
DQ18
DQ3
DQ19
Vcc
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
DQ22
DQ7
DQ23
A7
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
DQ8
DQ24
DQ9
w 72 pins Single In-Line Package
w Fast Page Mode Capability
3
w Single +5V± 0.5V power supply
w Fast Access Time & Cycle Time
4
DQ25
DQ10
DQ26
DQ11
DQ27
DQ12
DQ28
Vcc
5
NC
tRAC tCAC tRC
tPC
40
6
Vcc
HMD1M32M2G-6
HMD1M32M2G-7
w Low Power
60
70
15
18
110
130
7
A8
45
8
A9
9
NC
Active: 1,870/1,650/1,430 mW(MAX)
Standby: 11mW(CMOS level : MAX)
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
/RAS2
NC
NC
w /RAS Only Refresh, /CAS before /RAS Refresh,
Hidden Refresh Capability
A0
NC
DQ29
DQ13
DQ30
DQ14
DQ31
DQ15
NC
A1
NC
w All inputs and outputs TTL Compatible
w 1,024 Refresh Cycles/16ms
A2
NC
A3
Vss
A4
/CAS0
/CAS2
/CAS3
/CAS1
/RAS0
NC
PRESENCE DETECT PINS (Optional)
A5
A6
PIN
PD1
PD2
PD3
PD4
60NS
Vss
Vss
NC
70NS
NC
PD1
Vss
Vss
Vss
NC
DQ4
DQ20
DQ5
DQ21
DQ6
PD2
PD3
NC
PD4
/WE
NC
NC
NC
Vss
PIN DESCRIPTION
PIN
FUNCTION
PIN
FUNCTION
Presence Detect
A0 – A9
Address Inputs
PD1 – PD4
DQ0 – DQ31
/RAS0, /RAS2
/CAS0 - /CAS3
/WE
Data Input/Output
Vcc
Vss
NC
-
Power (+5V)
Ground
Row Address Strobe
Column Address Strobe
Read/Write Enable
No Connection
-
URL:www.hbe.co.kr
REV.1.0 (August.2002)
HANBiT Electronics Co., Ltd
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HANBit
HMD1M32M2G
FUNCTIONAL BLOCK DIAGRAM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
U0
/RAS0
/CAS0
/CAS1
/RAS
/LCAS
/UCAS
/OE
DQ0-DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ8-DQ15
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
U1
/RAS
/LCAS
/UCAS
/OE
/RAS2
/CAS2
/CAS3
DQ16-DQ23
DQ8
DQ9D
Q10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ24-DQ31
/WE
A0-A9
Vcc
0.1uF Capacitor
Vss
ABSOLUTE MAXIMUM RATINGS*
SYMBOL
TA
PARAMETER
RATING
0 ~ 70
-55 ~ 125
-1.0 ~ 7.0
-1.0 ~ 7.0
50
UNIT
C
Ambient Temperature under Bias
Storage Temperature (Plastic)
Voltage on any Pin Relative to Vss
Power Supply Voltage
TSTG
VIN/VOUT
VCC
C
V
V
IOUT
Short Circuit Output Current
Power Dissipation
mA
W
PD
2
*NOTE: 1. Stress greater than above absolute Maximum Ratings? May cause permanent damage to the device.
URL:www.hbe.co.kr
REV.1.0 (August.2002)
HANBiT Electronics Co., Ltd
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HANBit
HMD1M32M2G
RECOMMENDED DC OPERATING CONDITIONS (TA = 0 ~ 70C)
PARAMETER
Supply Voltage
SYMBOL
Vcc
MIN
4.5
0
TYP.
MAX
UNIT
5.0
5.5
0
V
V
V
V
Ground
Vss
0
-
Input High Voltage
VIH
2.4
-1.0
Vcc+1
0.8
Input Low Voltage
VIL
-
*NOTE: All voltages referenced to Vcc
DC AND OPERATING CHARACTERISTICS
SYMBOL
PARAMETER
MIN
MAX
UNIT
NOTE
Output Level
VOH
2.4
Vcc
V
Output High Level Voltage (IOUT = -5mA)
Output Level
VOL
0
0.4
V
Output Low Level Voltage (IOUT = 4.2mA)
60ns
70ns
-
-
-
-
340
300
-
Operating Current
ICC1
Average Power Supply Operating Current
(/RAS,/CAS,Address Cycling : tRC = tRC min)
mA
1,2
Standby Current (TTL)
ICC2
ICC3
Power Supply Standby Current
(/RAS,/CAS = VIH)
-
-
4
mA
mA
/RAS Only Refresh Current
Average Power Supply Current
/RAS Only Mode
60ns
70ns
340
300
2
(/RAS Cycling, /CAS = VIH,: tRC = tRC min)
Fast Page Mode Current
Average Power Supply Current
Fast Page Mode
60ns
70ns
-
-
340
300
mA
mA
1,3
1,3
ICC
(/RAS = VIL, /CAS, Address Cycling : tPC = tPC min)
ICC4
Standby Current (CMOS)
Power Supply Standby Current
(/RAS,/CAS >= Vcc – 0.2V)
/CAS before /RAS Refresh Current
(tRC = tRC min)
ICC5
ICC6
-
2
mA
mA
60ns
70ns
-
-
340
300
URL:www.hbe.co.kr
REV.1.0 (August.2002)
HANBiT Electronics Co., Ltd
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HANBit
HMD1M32M2G
Standby Current /RAS = VIH
/CAS = VIL
DOUT = Enable
ICC7
-
10
10
10
mA
uA
uA
1
Input Leakage Current
II(L)
Any Input (0V<=VIN<=7V)
-10
-10
All Other Pins Not Under Test = 0V
Output Leakage Current
IO(L)
(DOUT is Disabled, 0V<=VOUT<=7V)
Note: 1.Icc depends on output load condition when the device is selected.
Icc (max) is specified at the output open condition.
2. Address can be changed once or less while /RAS = VIL.
3. Address can be changed once or less while /CAS = VIH
CAPACITANCE ( TA=25oC, Vcc = 5V+/- 10%, f = 1Mhz )
DESCRIPTION
Input Capacitance (A0-A9)
SYMBOL
CI1
MIN
MAX
UNITS
NOTE
1
-
-
-
-
-
35
34
27
27
20
pF
pF
pF
pF
pF
Input Capacitance (/WE)
C I2
1,2
1,2
1,2
1,2
Input Capacitance (/RAS0,/RAS2)
Input Capacitance (/CAS0-/CAS3)
Input/Output Capacitance (DQ0-31)
CI3
CI4
CDQ1
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. /CAS = VIH to disable DOUT.
o
o
AC CHARACTERISTICS ( 0 C £ TA £ 70 C , Vcc = 5V±10%, See notes 1,15.)
The GMM731000CNS/SG writes data only in early write cycle (twcs>=twcs(min))
Delayed write cycle is not available because of I/O common.
READ, WRITE AND REFRESH CYCLE (Common Parameters)
-6
-7
SYMBOL
PARAMETER
UNIT
NOTE
MIN
110
40
60
15
0
MAX
MIN
130
50
70
18
0
MAX
tRC
tPR
Random Read or Write Cycle Time
/RAS Precharge Time
-
-
ns
ns
ns
ns
ns
ns
ns
-
-
tRAS
tCAS
tASR
tRAH
tASC
/RAS Pulse Width
10K
10K
/CAS Pulse Width
10K
10K
Row Address Setup Time
Row Address Hold Time
Column Address Setup Time
-
-
-
-
-
-
10
0
10
0
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REV.1.0 (August.2002)
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HANBit
HMD1M32M2G
tCAH
tRCD
tRAD
tRSH
tCSH
tCRP
tT
Column Address Hold Time
/RAS to /CAS Delay Time
/RAS to Column Address Delay Time
/RAS Hold Time
10
20
15
15
60
5
-
45
30
-
15
20
15
18
70
5
-
52
35
-
9
ns
ns
ns
ns
ns
ns
ns
ms
10
/CAS Hold Time
-
-
/CAS to /RAS Precharge Time
Transition Time (Rise and Fall)
Refresh Period (1024 Cycle)
-
-
3
50
16
3
50
16
8
tREF
-
-
READ CYCLE
SYMBOL
-6
-7
PARAMETER
UNIT
NOTE
MIN
MAX
MIN
MAX
tRAC
tCAC
tAA
Access Time from /RAS
-
-
60
15
30
-
-
-
70
18
35
-
ns
ns
ns
ns
ns
ns
ns
ns
2,3
3,4
Access Time from /CAS
Access Time from Column Address
Read Command Setup Time
Read Command Hold Time to /CAS
Read Command Hold Time to /RAS
Column Address to /RAS Lead Time
Output Buffer Turn-off Time
-
-
3,5,14
tRCS
tRCH
tRRH
tRAL
tOFF
0
0
0
30
-
0
0
0
35
-
-
-
6
6
-
-
-
-
15
15
7
WRITE CYCLE
SYMBOL
-6
-7
PARAMETER
UNIT
NOTE
MIN
MAX
MIN
MAX
twcs
tWCH
tWP
Write Command Setup Time
Write Command Hold Time
Write Command Pulse Width
Write Command to /RAS Lead Time
Write Command to /CAS Lead Time
Data-in Setup Time
0
-
-
-
-
-
-
-
0
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
11
10
10
15
15
0
15
10
18
18
0
tRWL
tCWL
tDS
12
12
tDH
Data-in Hold Time
10
15
REFRESH CYCLE
SYMBOL
-6
-7
PARAMETER
UNIT
NOTE
MIN
10
MAX
MIN
10
MAX
/CAS Setup Time
tCRS
tCHR
-
-
-
-
ns
ns
(/CAS-before-/RAS Refresh Cycle)
/CAS Hold Time
10
10
(/CAS-before-/RAS Refresh Cycle)
URL:www.hbe.co.kr
REV.1.0 (August.2002)
HANBiT Electronics Co., Ltd
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HANBit
HMD1M32M2G
tRPC
/RAS Precharge to /CAS Hold Time
5
-
5
-
ns
FAST PAGE MODE CYCLE
SYMBOL
-6
-7
PARAMETER
UNIT
NOTE
MIN
MAX
MIN
MAX
tPC
Fast Page Mode Cycle Time
40
10
60
-
-
45
10
70
-
-
ns
ns
ns
ns
ns
tCP
Fast Page Mode /RAS Precharge Time
Fast Page Mode /CAS Pulse Time
Access Time from /CAS Precharge
/RAS Hold Time from /CAS Precharge
-
100K
35
-
100K
40
tRASP
tACP
tRHCP
13
14
35
-
40
-
Note: 1. AC measurements assume tT = 5ns.
2. Assumes that tRCD<=tRCD(max) and tRCD<=tRCD(max). If tRCD or tRCD is greater than the maximum
recommended value shown in this table, tRCD exceeds the value shown.
3. Measured with a load circuit equivalent to 2TTL loads and 100PpF.
4. Assumes that tRCD >= tRCD (max) and tRCD<= tRCD (max).
5.Assumes that tRCD <= tRCD (max) and tRCD>= tRCD (max).
6.Either tRCH or tRRH must be satisfied for a read cycles.
7. tOFF(max) defines the time at which the outputs achieve the open circuit condition and is not referenced to output
voltage levels.
8. VIH(min) and VIL(max) are reference levels for measuring timing of input signals.
Also, transition times are measured between VIH and VIL.
9. Operation with the tRCD (max) limit insures that tRAC (max) can be met, tRCD (max) is specified as a reference
point only, if tRCD is greater than the specified tRCD (max) limit, then access time is controlled exclusively by tCAC .
10. Operation with the tRAD (max) limit insures that tRAC (max) can be met, tRAD (max) is specified as a reference
point only, if tRAD is greater than the specified tRAD (max) limit, then access time is controlled exclusively by tAA.
11. TWCS is not restrictive operating parameter. It is included in the data sheet as electrical characteristics only.
If twcs >= twcs (min), the cycle is an early write cycle and the data out pin will remain open circuit(high impe-
dance) throughout the entire cycle.
12. These parameters are referenced to /CAS leading edge in early write cycles.
13. tRASP is defines /RAS pulse width in Fast Page Mode cycles.
14. Access time is determined by the longer of tAA or tCAC or tACP .
15. An initial pause of 200us is required after power up followed by a minimum of eight initialization cycle (eny
combination of cycles containing /RAS clock such as /RAS only refresh).
If the internal refresh count is used, a mnimum of eight /CAS before /RAS refresh cycle are required.
URL:www.hbe.co.kr
REV.1.0 (August.2002)
HANBiT Electronics Co., Ltd
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HANBit
HMD1M32M2G
PACKAGING INFORMATION
107.95
101.19
3.18
R1.57 mm
3.38 mm
19.05
6.35
10.16
6.35 mm
2.03 mm
6.35
R1.57±1.0
95.25 mm
5.08
MAX
2.54 mm
0.25 mm MAX
MIN
1.27 mm
1.27±0.08 mm
ORDERING INFORMATION
Component
Number
Part Number
Density
Org.
Package
Vcc
MODE
SPEED
HMD1M32M2G-6
4MByte
X32
72 Pin-SIMM
2EA
5V
FP
60ns
URL:www.hbe.co.kr
REV.1.0 (August.2002)
HANBiT Electronics Co., Ltd
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HANBit
HMD1M32M2G
HMD1M32M2G-7
4MByte
x 32
72 Pin-SIMM
2EA
5V
FP
70ns
URL:www.hbe.co.kr
REV.1.0 (August.2002)
HANBiT Electronics Co., Ltd
8
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