HMF2M64F8VS-90
更新时间：2024-09-18 07:27:14
品牌：HANBIT
描述：FLASH-ROM MODULE 16MByte (2M x 64-Bit) ,120PIN SMM,3.3V
概述
数据手册HMF2M64F8VS-90 概述
FLASH-ROM MODULE 16MByte (2M x 64-Bit) ,120PIN SMM,3.3V FLASH- ROM模块16兆字节（ 2M ×64位） ， 120PIN SMM ， 3.3V
HMF2M64F8VS-90 数据手册
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HMF2M64F8VS
FLASH-ROM MODULE 16MByte (2M x 64-Bit) ,120PIN SMM,3.3V
Part No. HMF2M64F8VS
GENERAL DESCRIPTION
The HMF2M64F8VS is a high-speed flash read only memory (FROM) module containing 2,048,000 words organized in an
x64bit configuration. The module consists of eight 2M x 8 FROM mounted on a 120-pin, MMC connector FR4-printed circuit
board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the
device is similar to reading from 12.0V flash or EPROM devices.
Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or
erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power
design. All module components may be powered from a single + 3.0V DC power supply and all inputs and outputs are LVTTL-
compatible
FEATURES
w Access time : 80, 90 and 120ns
w High-density 16MByte design
w High-reliability, low-power design
w Single + 3V ± 0.3V power supply
w Easy memory expansion
w Hardware reset pin(RESET#)
w FR4-PCB design
w 100-Pin Designed 50-Pin Fine Pitch SMM Connector P1,P2
w Minimum 1,000,000 write cycle guarantee per sector
o
w 20-year data retention at 125
w Flexible sector architecture
w Embedded algorithms
C
w Erase suspend / Erase resume
w The used device is 2Mx8bit , K8D1616UBM from SEC
OPTIONS
w Timing
MARKING
90ns access
100ns access
120ns access
w Packages
120-pin SMM
-90
-100
-120
F
1
URL :www.hbe.co.kr
REV.02(August,2002)
HANbit Electronics Co., Ltd.
HANBit
HMF2M64F8VS
PIN ASSIGNMENT
P1
P2
PIN
1
Symbol
VCC
PIN
31
32
33
34
35
36
37
38
Symbol
VSS
PIN
1
Symbol
VCC
PIN
31
32
33
34
35
36
37
38
Symbol
VSS
2
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
2
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
3
3
4
4
5
5
6
6
7
7
8
8
9
DQ39
VCC
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
VCC
A1
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
DQ7
VSS
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
VSS
A10
9
DQ23
VCC
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
DQ55
VSS
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
VCC
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
VSS
A20
NC
A2
A11
A0
BANK0*
VSS
A3
A12
A16
A4
A13
WE1*
WE2*
VCC
VSS
A5
A14
WE3*
VSS
VCC
A6
VSS
A15
OE*
WE4*
WE5*
WE6*
A7
A17
RESET*
WE0*
RY_BY*
A8
A18
A9
A19
WE7*
VSS
30
VCC
60
VSS
30
VCC
60
Note: To stack PCB, the pin number 51 will be used for the upper second PCB.
2
URL :www.hbe.co.kr
REV.02(August,2002)
HANbit Electronics Co., Ltd.
HANBit
HMF2M64F8VS
FUNCTIONAL BLOCK DIAGRAM
64
DQ0 – DQ63
21
A0 – A20
DQ15/A-1
A0
DQ15/A-1
A0-19
A0
A0-19
A1-20
DQ 32-39
/WE
A1-20
/WE
DQ 0-7
/WE4
/OE
/OE
U5
U1
/CE
/CE
RY-BY
/Reset
RY-BY
/Reset
DQ15/A-1
DQ15/A-1
A0-19
A0-19
DQ40-47
/WE
DQ 8-15
/WE
/WE1
/WE5
U2
/OE
/OE
U6
/CE
/CE
RY-BY
/Reset
RY-BY
/Reset
DQ15/A-1
A0-19
DQ15/A-1
A0-19
DQ48-55
DQ16-23
/WE2
/WE
/WE
U3
/WE6
/OE
/OE
U7
/CE
/CE
RY-BY
/Reset
RY-BY
/Reset
DQ15/A-1
DQ15/A-1
A0-19
A0-19
DQ56-63
/WE
DQ24-31
/WE
/WE3
/OE
U4
/WE7
/OE
/CE
/OE
U8
/CE
/BANK0
RY_/BY
/Reset
RY-BY
/Reset
RY-BY
/Reset
3
URL :www.hbe.co.kr
REV.02(August,2002)
HANbit Electronics Co., Ltd.
HANBit
HMF2M64F8VS
TRUTH TABLE
MODE
STANDBY
/OE
X
/CE
H
/WE
X
/RESET
DQ ( /BYTE=L )
POWER
Vcc±0.3V
HIGH-Z
HIGH-Z
DOUT
STANDBY
ACTIVE
ACTIVE
ACTIVE
NOT SELECTED
READ
H
L
H
H
H
H
L
L
H
WRITE or ERASE
NOTE: X means don’t care
X
L
L
DIN
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage with respect to ground all other pins
Voltage with respect to ground Vcc
Storage Temperature
SYMBOL
RATING
VIN,OUT
VCC
-0.5V to Vcc+0.5V
-0.5V to +4.0V
o o
-65 C to +150 C
TSTG
o o
-40 C to +85 C
Operating Temperature
TA
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
Vcc for ± 10% device Supply Voltages
Ground
SYMBOL
Vcc
MIN
2.7V
0
TYP.
3.0
0
MAX
3.6V
0
VSS
o
o
DC AND OPERATING CHARACTERISTICS ( 0 C £ T £ 70 C )
A
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
MAX
UNIT
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Vcc=Vcc max, VIN= GND to Vcc
Vcc=Vcc max, VOUT= GND to Vcc
IOH = -2.0mA, Vcc = Vcc min
IOL = 4.0mA, Vcc =Vcc min
IL1
IL0
-1.0
1.0
1.0
-
mA
mA
V
-10
VOH
VOL
0.85x Vcc
-
0.4
128
32
240
240
-
V
/CE = VIL,
/OE = VIH,
5MHZ
1MHZ
-
Vcc Active Read Current (1)
ICC1
mA
-
-
Vcc Active Write Current (2)
Vcc Standby Current
/CE = VIL, /OE=VIH
ICC2
ICC3
mA
mA
V
/CE, /RESET=Vcc±0.3V
-
Low Vcc Lock-Out Voltage
VLKO
1.5
Notes
:
1. The Icc current listed includes both the DC operating current and the frequent component (at 5MHz).
2. Icc active while embedded algorithm (program or erase) is in progress
3. Not 100% tested
4
URL :www.hbe.co.kr
REV.02(August,2002)
HANbit Electronics Co., Ltd.
HANBit
HMF2M64F8VS
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
UNIT
COMMENTS
MIN.
TYP.
0.7
27
MAX.
Block Erase Time
-
15
sec
sec
ms
Excludes 00H programming
prior to erasure
Chip Erase Time
Word Programming Time
Chip Programming Time
-
-
11
330
36
Excludes system-level
overhead
12
sec
TSOP CAPACITANCE
PARAMETER
SYMBOL
PARAMETER
DESCRIPTION
TEST SETUP
MIN
MAX
UNIT
CIN
COUT
CIN2
Input Capacitance
VIN = 0
VOUT = 0
VIN = 0
-
-
-
10
10
10
pF
pF
pF
Output Capacitance
Control Pin Capacitance
Notes
: Capacitance is periodically sampled and not 100% tested.
TEST SPECIFICATIONS
TEST CONDITION
VALUE
UNIT
Output load
1TTL gate
Input rise and full times
5
0 to 3
1.5
ns
V
Input pulse levels
Input timing measurement reference levels
Output timing measurement reference levels
V
1.5
V
5.0V
2.7kW
IN3064
or Equivalent
Device
Under
Test
CL
6.2k
W
Diodes = IN3064
or Equivalent
Note : CL = 100pF including jig capacitance
5
URL :www.hbe.co.kr
REV.02(August,2002)
HANbit Electronics Co., Ltd.
HANBit
HMF2M64F8VS
AC CHARACTERISTICS
Read Only Operations Characteristics
u
SPEED
-100
PARAMETER
DESCRIPTION
UNIT
- 90
-120
MIN
MAX
MIN
MAX
MIN
MAX
tRC
tACC
tCE
Read Cycle Time
90
100
120
ns
ns
ns
ns
ns
ns
ns
Address Access time
90
90
35
30
100
100
40
120
120
50
Chip Enable to Access time
Output Enable time
tOE
tDF
Chip Enable to Output High-Z
30
30
tOEH
tQH
Output Enable Hold Time
Output Hold Time From Addresses,
/CE or /OE
0
0
0
0
0
0
Erase/Program Operations
u
Alternate /WE Controlled Writes
- 90
-100
-120
PARAMETER
DESCRIPTION
MIN
90
0
MAX
MIN
100
0
MAX
MIN
120
0
MAX
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
tWC
tAS
Write Cycle Time (1)
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Setup Time
Address Hold Time
45
45
0
45
45
0
50
50
0
tAH
tDS
Data Setup Time
tDH
Data Hold Time
0
0
0
tOES
tGHWL
tCS
Output Enable Setup Time
Read Recover Time Before Write
/CE Setup Time
0
0
0
0
0
0
0
0
0
tCH
/CE Hold Time
tWP
Write Pulse Width
45
30
-
-
45
30
-
-
50
30
-
-
tWPH
tPGM
tBERS
tVCS
tRB
Write Pulse Width High
Programming Operation
Block Erase Operation (2)
Vcc set up time
11
11
11
0.7
50
-
-
0.7
50
-
-
0.7
50
-
-
0
-
-
-
-
-
0
-
-
-
-
-
0
-
-
-
-
-
Write Recover Time Before RY_/BY
/RESRT High Before Read
/RESRT to Power Down Time
/RESRT Pulse Width
/RESRT Setup Time
50
50
50
tRH
20
20
20
tRPD
tRP
500
500
500
500
500
500
tRSTS
Notes
: : 1. Not 100% tested
2 . The duration of the program or erase operation varies and is calculated in the internal algorithms.
6
URL :www.hbe.co.kr
REV.02(August,2002)
HANbit Electronics Co., Ltd.
HANBit
HMF2M64F8VS
Erase/Program Operations
u
Alternate /CE Controlled Writes
- 90
-100
-120
PARAMETER
DESCRIPTION
MIN
90
0
MAX
MIN
100
0
MAX
MIN
120
0
MAX
tWC
tAS
Write Cycle Time(1)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Setup Time
Address Hold Time
tAH
45
45
0
45
45
0
50
50
0
tDS
Data Setup Time
tDH
Data Hold Time
tOES
tGHWL
tCS
Output Enable Setup Time
Read Recover Time Before Write
/CE Setup Time
0
0
0
0
0
0
0
0
0
tCH
/CE Hold Time
0
0
0
tWP
Write Pulse Width
45
30
45
30
50
30
tWPH
tPGM
tBERS
Write Pulse Width High
Programming Operation
Block Erase Operation (2)
11
11
11
0.7
-
0.7
-
0.7
-
Notes
:
1. Not 100% tested
2 . This does not include the preprogramming time
u READ OPERATIONS TIMING
7
URL :www.hbe.co.kr
REV.02(August,2002)
HANbit Electronics Co., Ltd.
HANBit
HMF2M64F8VS
RESET TIMING
u
u PROGRAM OPERATIONS TIMING
Alternate /WE Controlled Writes
8
URL :www.hbe.co.kr
REV.02(August,2002)
HANbit Electronics Co., Ltd.
HANBit
HMF2M64F8VS
Alternate /CE Controlled Writes
CHIP/BLOCK ERASE OPERATION TIMINGS
u
9
URL :www.hbe.co.kr
REV.02(August,2002)
HANbit Electronics Co., Ltd.
HANBit
HMF2M64F8VS
DATA# POLLING TIMES DURING INTERNAL ROUTINE OPERATION
u
RY_ /BY TIMEING DURING ERASE / PROGRAM OPERATION
u
10
URL :www.hbe.co.kr
REV.02(August,2002)
HANbit Electronics Co., Ltd.
HANBit
HMF2M64F8VS
TOGGLE# BIT DURING INTERNAL ROUTINE OPERATION
u
11
URL :www.hbe.co.kr
REV.02(August,2002)
HANbit Electronics Co., Ltd.
HANBit
HMF2M64F8VS
PACKAGE DIMMENSIONS
Unit :
mm
FRONT SIDE
REAR SIDE
PCB Thickness: 1.3 ± 0.1mm
12
URL :www.hbe.co.kr
REV.02(August,2002)
HANbit Electronics Co., Ltd.
HANBit
HMF2M64F8VS
ORDERING INFORMATION
Component
Part Number
Density
Org.
Package
Vcc
SPEED
Number
HMF2M64F8VS-90
HMF2M64F8VS-100
HMF2M64F8VS-120
16MByte
16MByte
16MByte
X 64
120 Pin-SMM
120 Pin-SMM
120 Pin-SMM
8EA
3.3V
3.3V
3.3V
90ns
100ns
120ns
8EA
8EA
X 64
X 64
13
URL :www.hbe.co.kr
REV.02(August,2002)
HANbit Electronics Co., Ltd.
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