HSD8M72D9A-10 [HANBIT]
Synchronous DRAM Module 64Mbyte (8Mx72bit),DIMM with ECC based on 8Mx8, 4Banks, 4K Ref., 3.3V; 同步DRAM模块64Mbyte （ 8Mx72bit ） ，与DIMM ECC基于8Mx8 ， 4Banks ， 4K参考， 3.3V
| 型号： | HSD8M72D9A-10 |
| 厂家： | 
HANBIT ELECTRONICS CO.,LTD |
| 描述： | Synchronous DRAM Module 64Mbyte (8Mx72bit),DIMM with ECC based on 8Mx8, 4Banks, 4K Ref., 3.3V |
| 文件： | 总10页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HANBit
HSD8M72D9A
Synchronous DRAM Module 64Mbyte (8Mx72bit),DIMM with ECC
based on 8Mx8, 4Banks, 4K Ref., 3.3V
Part No. HSD8M72D9A
GENERAL DESCRIPTION
The HSD8M72D9A is a 8M x 72 bit Synchronous Dynamic RAM high density memory module. The module consists of
nine CMOS 2M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 168-pin glass-epoxy
substrate. Two 0.33uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The
HSD8M72D9A is a DIMM(Dual in line Memory Module) and is intended for mounting into 168-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock
cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high
bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC
power supply and all inputs and outputs are LVTTL-compatible.
FEATURES
• Part Identification
HSD8M72D9A-F/10H : 100MHz (CL=2&3)
HSD8M72D9A-F/10L : 100MHz (CL=3)
HSD8M72D9A-F/10 : 100MHz (CL=2)
HSD8M72D9A-F/13 : 133MHz (CL=3)
HSD8M72D9A-F/13H : 133MHz (CL=2)
F means Auto & Self refresh with Low-Power (3.3V)
• Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ±0.3V power supply
• MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• The used device is 2M x 8bit x 4Banks SDRAM
URL: www.hbe.co.kr
REV 1.0 (August.2002)
1
HANBit Electronics Co.,Ltd.
HANBit
HSD8M72D9A
PIN ASSIGNMENT
PIN Symbol PIN
Symbol
DQM1
/CS0
NC
PIN
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
Symbol
DQ18
DQ19
Vcc
PIN
85
Symbol
Vss
PIN
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
Symbol
PIN
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
Symbol
1
Vss
DQ0
DQ1
DQ2
DQ3
Vcc
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
DQM5
NC
DQ50
DQ51
Vcc
2
86
DQ32
DQ33
DQ34
DQ35
Vcc
3
87
/RAS
Vss
4
Vss
DQ20
NC
88
DQ52
NC
5
A0
89
A1
6
A2
NC
90
A3
NC
7
DQ4
DQ5
DQ6
DQ7
DQ8
Vss
A4
NC
91
DQ36
DQ37
DQ38
DQ39
DQ40
Vss
A5
NC
8
A6
Vss
92
A7
Vss
9
A8
DQ21
DQ22
DQ23
Vss
93
A9
DQ53
DQ54
DQ55
Vss
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
A10
BA1
Vcc
94
BA0
A11
Vcc
95
96
DQ9
DQ10
DQ11
DQ12
DQ13
Vcc
Vcc
DQ24
DQ25
DQ26
DQ27
Vcc
97
DQ41
DQ42
DQ43
DQ44
DQ45
Vcc
CLK1
A12
Vss
DQ56
DQ57
DQ58
DQ59
Vcc
CLK0
Vss
98
99
NC
100
101
102
103
104
105
106
107
108
109
110
111
112
CKE0
NC
/CS2
DQM2
DQM3
NC
DQ28
DQ29
DQ30
DQ31
Vss
DQM6
DQM7
NC
DQ60
DQ61
DQ62
DQ63
Vss
DQ14
DQ15
CB0
CB1
Vss
DQ46
DQ47
CB4
Vcc
Vcc
NC
CB5
NC
NC
CLK2
NC
Vss
NC
CLK3
NC
NC
CB2
CB3
Vss
NC
CB6
CB7
Vss
NC
WP
NC
SA0
Vcc
SDA
SCL
Vcc
SA1
/WE
DQ1C6
DQ17
/CAS
DQM4
DQ48
DQ49
SA2
DQM0
Vcc
Vcc
URL: www.hbe.co.kr
REV 1.0 (August.2002)
2
HANBit Electronics Co.,Ltd.
HANBit
HSD8M72D9A
FUNCTIONAL BLOCK DIAGRAM
DQ0-63
CB0-7
CKE
CAS
CLK
CLKA
CKE0
/CA
DQ0-7
U1
RAS
CE
DQM0
/RAS
/CS0
DQM0
WE A0-A11
BA0-1
CKE
CAS
CLK
CLKB
DQ16-23
U6
RAS
CE
DQM2
BA0-1
DQM2
WE A0-A11
CKE
CAS
CLK
DQ32-39
U2
RAS
CE
DQM4
BA0-1
DQM4
DQM6
WE A0-A11
CKE
CAS
CLK
DQ48-55
U7
RAS
CE
DQM6
BA0-1
WE A0-A11
CKE
CAS
CLK
CB0-7
U5
RAS
CE
DQM1
BA0-1
DQM1
WE A0-A11
CKE
CAS
CLK
DQ8-15
U3
RAS
CE
DQM1
BA0-1
DQM1
WE A0-A11
CKE
CAS
CLK
DQ24-31
U8
RAS
CE
DQM3
BA0-1
DQM3
DQM5
WE A0-A11
CKE
CAS
CLK
DQ40-47
U4
RAS
CE
DQM5
BA0-1
WE A0-A11
CKE
CAS
CLK
U9
DQ56-63
RAS
CE
DQM7
BA0-1
DQM7
WE A0-A11
Vcc
Vss
Two 0.1uF Capacitors
per each SDRAM
/WE
A0 - A11
BA0-1
URL: www.hbe.co.kr
REV 1.0 (August.2002)
3
HANBit Electronics Co.,Ltd.
HANBit
HSD8M72D9A
PIN FUNCTION DESCRIPTION
PIN
NAME
System clock
Chip enable
INPUT FUNCTION
CLK
/CE
Active on the positive going edge to sample all inputs.
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQM
CKE
Clock enable
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
CKE should be enabled 1CLK+tSS prior to valid command.
Row/column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA11, Column address : CA0 ~ CA8
A0 ~ A11
BA0 ~ BA1
/RAS
Address
Bank select address Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
Row address strobe Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
/CAS
Column address
strobe
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
/WE
Write enable
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
DQM0 ~ 7
Data input/output
mask
Makes data output Hi-Z, tSHZ after the clock and masks the output.
Blocks data input when DQM active. (Byte masking)
Data inputs/outputs are multiplexed on the same pins.
Power and ground for the input buffers and the core logic.
DQ0 ~ 63
VDD/VSS
Data input/output
Power
supply/ground
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage on Any Pin Relative to Vss
Voltage on Vcc Supply Relative to Vss
Power Dissipation
SYMBOL
VIN ,OUT
Vcc
RATING
-1V to 4.6V
-1V to 4.6V
9W
PD
o
o
Storage Temperature
TSTG
-55 C to 150 C
Short Circuit Output Current
IOS
450mA
Notes:
Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
URL: www.hbe.co.kr
REV 1.0 (August.2002)
4
HANBit Electronics Co.,Ltd.
HANBit
HSD8M72D9A
DC OPERATING CONDITIONS
(Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C) )
PARAMETER
Supply Voltage
SYMBOL
Vcc
VIH
MIN
3.0
2.0
-0.3
2.4
-
TYP.
MAX
3.6
UNIT
V
NOTE
3.3
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
3.0
Vcc+0.3
0.8
V
1
VIL
0
-
V
2
VOH
VOL
-
V
IOH = -2mA
IOL = 2mA
3
-
0.4
V
Input leakage current
I LI
-10
-
10
uA
Notes :
1. VIH (max) = 5.6V AC. The overshoot voltage duration is £ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is £ 3ns.
3. Any input 0V £ VIN £ VDDQ
.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
CAPACITANCE
(VCC = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)
DESCRIPTION
SYMBOL
CCLK
MIN
2.5
2.5
2.5
4.0
MAX
4.0
UNITS
Clock
pF
pF
pF
pF
/RAS, /CAS,/WE,/CS, CKE, DQM
Address
CIN
5.0
CADD
5.0
DQ (DQ0 ~ DQ7)
COUT
6.5
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
SYMB
OL
TEST
VERSION
-12
PARAMETER
UNIT NOTE
CONDITION
13H
-13
-10
-10L
Operating current
(One bank active)
Burst length = 1
ICC1
75
75
75
1
70
70
mA
mA
mA
1
tRC ³ tRC(min) IO = 0mA
CKE £ VIL(max), tCC=10ns
CKE & CLK £ VIL(max)
tCC=¥
ICC2
P
Precharge standby current
In power-down mode
ICC2PS
1
CKE ³ VIH(min)
CS* ³ VIH(min), tCC=10ns
Input signals are changed
one time during 20ns
CKE ³ VIH(min)
ICC2
N
15
Precharge standby current
In non power-down mode
mA
mA
ICC2NS
CLK £ VIL(max), tCC=¥
Input signals are stable
CKE £ VIL(max), tCC=10ns
6
3
Active standby current in ICC3
P
URL: www.hbe.co.kr
REV 1.0 (August.2002)
5
HANBit Electronics Co.,Ltd.
HANBit
HSD8M72D9A
power-down mode
CKE&CLK £ VIL(max)
tCC=¥
ICC3PS
3
CKE³ VIH(min),
CS*³ VIH(min), tCC=10ns
Input signals are changed
one time during 20ns
CKE³ VIH(min)
ICC3
N
25
Active standby current in
non power-down mode
(One bank active)
mA
ICC3NS
CLK £VIL(max), tCC=¥
Input signals are stable
IO = 0 mA , Page burst
4Banks Activated
tCCD = 2CLKs
15
Operating current
(Burst mode)
ICC4
115
135
115 110
95
95
mA
1
2
Refresh current
ICC5
tRC ³ tRC(min)
135 130 125
125
mA
mA
mA
1
I
Self refresh current
CKE £ 0.2V
CC6
400
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS(V /V =V
/V
).
IH IL
DDQ SSQ
AC OPERATING TEST CONDITIONS
(vcc = 3.3V ± 0.3V, TA = 0 to 70°C)
PARAMETER
Value
UNIT
AC Input levels (Vih/Vil)
2.4/0.4
1.4
V
Input timing measurement reference level
Input rise and fall time
V
tr/tf = 1/1
1.4
Ns
V
Output timing measurement reference level
Output load condition
See Fig. 2
+3.3V
V =1.4V
tt
1200W
50W
50pF
DOUT
DOUT
Z0=50W
870W
50pF*
V
V
(DC) = 2.4V, I = -2mA
OH
OH
OL
(DC) = 0.4V, I = 2mA
OL
(Fig. 1) DC output load
(Fig. 2) AC output load circuit
URL: www.hbe.co.kr
REV 1.0 (August.2002)
6
HANBit Electronics Co.,Ltd.
HANBit
HSD8M72D9A
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
VERSION
PARAMETER
SYMBOL
UNIT
-10L
NOTE
-13H
14
-13
15
20
20
45
-12
16
20
20
48
-10
20
20
20
50
Row active to row active delay
RAS to CAS delay
tRRD(min)
tRP(min)
20
20
20
50
ns
ns
ns
ns
1
1
1
1
15
Row precharge time
tRP(min)
15
tRAS(min)
tRAS(max)
37
Row active time
100
ns
Row cycle time
tRC(min)
tRDL(min)
tDAL(min)
tCDL(min)
tBDL(min)
tCCD(min)
60
65
68
2
70
70
ns
1
Last data in to row precharge
Last data in to Active delay
Last data in to new col. address delay
Last data in to burst stop
CLK
2.5
2 CLK + 20 ns
1
1
1
2
1
CLK
CLK
CLK
2
2
3
Col. address to col. address delay
CAS latency=3
CAS latency=2
Number of valid output data
ea
4
Notes :
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and
then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
-13H
-13
-12
-10
-10L
UNIT NOTE
PARAMETER
SYMBOL
MIN
MA
MIN MAX MIN MAX MIN MAX MIN MAX
X
CLK cycle
CAS
latency=3
CAS
7
7.5
-
8
-
10
10
10
12
time
tCC
1000
1000
1000
1000
ns
1
7.5
latency=2
CAS
CLK to valid
5.4
5.4
5.4
-
6
-
6
6
6
7
output delay latency=3
tSAC
ns
ns
1,2
2
CAS
latency=2
Output data
hold time
CAS
tOH
3
2.7
3
3
3
latency=3
URL: www.hbe.co.kr
REV 1.0 (August.2002)
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HANBit Electronics Co.,Ltd.
HANBit
HSD8M72D9A
CAS
2
-
-
3
3
latency=2
CLK high pulse width
CLK low pulse width
Input setup time
tCH
tCL
2.5
2.5
1.5
0.8
1
2.5
2.5
1.5
0.8
1
3
3
2
1
1
3
3
2
1
1
3
3
2
1
1
ns
ns
ns
ns
ns
3
3
3
3
3
tSS
tSH
tSLZ
Input hold time
CLK to output in Low-Z
CLK to output
in Hi-Z
CAS
latency=3
CAS
5.4
5.4
5.4
-
6
-
6
6
6
7
ns
ns
2
tSHZ
latency=2
Notes :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered, ie., [(tr + tf)/2-1]ns should be added to
the parameter.
SIMPLIFIED TRUTH TABLE
/R
A
S
/C
A
S
D
Q
M
CKE
CKE
n
/C
S
/W
E
BA
0,1
A10/
AP
A11
A9~A0
n-1
COMMAND
NOTE
Register
Refresh
Mode register set
Auto refresh
H
H
X
H
L
L
L
L
L
L
X
OP code
X
1,2
3
L
L
H
X
Entry
3
Self
refres
h
L
H
L
H
X
L
H
X
H
H
X
H
3
Exit
L
H
X
X
X
X
3
Bank active & row addr.
H
V
V
Row address
Auto
precharge
Read &
column
address
L
Column
Address
(A0 ~ A9)
4
disable
Auto
H
H
X
L
H
L
H
X
precharge
precharge
precharge
H
4,5
disable
Column
Address
(A0 ~ A9)
Auto
Write &
column
address
L
4
disable
X
L
H
L
L
X
V
Auto
H
4,5
6
disable
Burst Stop
H
H
X
X
L
L
L
L
H
H
L
L
X
X
X
Precharg Bank selection
V
X
L
X
e
All banks
H
H
L
X
V
X
X
H
X
V
8
X
V
X
X
H
X
V
X
V
X
X
H
X
V
Entry
Exit
H
L
L
H
L
X
X
X
Clock suspend or
active power down
X
X
X
H
L
Entry
H
Precharge power
down mode
H
L
Exit
L
H
X
URL: www.hbe.co.kr
REV 1.0 (August.2002)
HANBit Electronics Co.,Ltd.
HANBit
HSD8M72D9A
DQM
H
H
X
X
H
V
X
X
X
7
H
L
X
H
X
H
No operation command
X
(V=Valid, X=Don't care, H=Logic high, L=Logic low)
Notes :
1. OP Code : Operand code
A0 ~ A11 & BA0 ~ BA1 : Program keys. (@ MRS)
2. MRS can be issued only at all banks precharge state.
A new command can be issued after 2 CLK cycles of MRS.
3. Auto refresh functions are as same as CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
4. BA0 ~ BA1 : Bank select addresses.
If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected.
If both BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank B is selected.
If both BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank C is selected.
If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected.
If A10/AP is "High" at row precharge, BA0 and BA1 is ignored and all banks are selected.
5. During burst read or write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.
6. Burst stop command is valid at every burst length.
7. DQM sampled at positive going edge of a CLK and masks the data-in at the very CLK (Write DQM latency is 0),
but makes Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2)
PACKAGING INFORMATION
Unit : mm
Front View
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REV 1.0 (August.2002)
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HANBit Electronics Co.,Ltd.
HANBit
HSD8M72D9A
ORDERING INFORMATION
Part Number
Density
Org.
Package
Ref.
Vcc
MODE
MAX.frq
CL3
133MHz
CL2
HSD8M72D9A-13
HSD8M72D9A-13
HSD8M72D9A-10L
HSD8M72D9A-10
HSD8M72D9A-10H
HSD8M72D9A-F13
HSD8M72D9A-F10L
HSD8M72D9A-F10
HSD8M72D9A-F10H
64MByte
8M x 72
8M x 72
8M x 72
8M x 72
8M x 72
8M x 72
8M x 72
8M x 72
8M x 72
168 Pin-DIMM
168 Pin-DIMM
168 Pin-DIMM
168 Pin-DIMM
168 Pin-DIMM
168 Pin-DIMM
168 Pin-DIMM
168 Pin-DIMM
168 Pin-DIMM
4K
4K
4K
4K
4K
4K
4K
4K
4K
3.3V
3.3V
3.3V
3.3V
3.3V
3.3V
3.3V
3.3V
3.3V
SDRAM
SDRAM
SDRAM
SDRAM
SDRAM
SDRAM
SDRAM
SDRAM
SDRAM
64MByte
64MByte
64MByte
64MByte
64MByte
64MByte
64MByte
64MByte
133MHz
CL3
100MHz
CL2
100MHz
CL 2&3
100MHz
CL3
133MHz
CL3
100MHz
CL2
100MHz
CL 2&3
100MHz
F means Auto & Self refresh with Low-Power (3.3V)
URL: www.hbe.co.kr
REV 1.0 (August.2002)
10
HANBit Electronics Co.,Ltd.
相关型号：
HSD8M72D9A-10H
Synchronous DRAM Module 64Mbyte (8Mx72bit),DIMM with ECC based on 8Mx8, 4Banks, 4K Ref., 3.3V
HANBIT
HSD8M72D9A-10L
Synchronous DRAM Module 64Mbyte (8Mx72bit),DIMM with ECC based on 8Mx8, 4Banks, 4K Ref., 3.3V
HANBIT
HSD8M72D9A-13
Synchronous DRAM Module 64Mbyte (8Mx72bit),DIMM with ECC based on 8Mx8, 4Banks, 4K Ref., 3.3V
HANBIT
HSD8M72D9A-F10
Synchronous DRAM Module 64Mbyte (8Mx72bit),DIMM with ECC based on 8Mx8, 4Banks, 4K Ref., 3.3V
HANBIT
HSD8M72D9A-F10H
Synchronous DRAM Module 64Mbyte (8Mx72bit),DIMM with ECC based on 8Mx8, 4Banks, 4K Ref., 3.3V
HANBIT
HSD8M72D9A-F10L
Synchronous DRAM Module 64Mbyte (8Mx72bit),DIMM with ECC based on 8Mx8, 4Banks, 4K Ref., 3.3V
HANBIT
HSD8M72D9A-F13
Synchronous DRAM Module 64Mbyte (8Mx72bit),DIMM with ECC based on 8Mx8, 4Banks, 4K Ref., 3.3V
HANBIT
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