HGT1S3N60C3D [HARRIS]
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes; 6A ， 600V ， UFS系列N沟道IGBT与反并联二极管超高速
| 型号： | HGT1S3N60C3D |
| 厂家： | 
HARRIS CORPORATION |
| 描述： | 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| 文件： | 总7页 (文件大小：331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HGTP3N60C3D, HGT1S3N60C3D,
HGT1S3N60C3DS
S E M I C O N D U C T O R
6A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
January 1997
Features
Packaging
JEDEC TO-220AB
o
• 6A, 600V at T = 25 C
C
EMITTER
COLLECTOR
• 600V Switching SOA Capability
GATE
o
• Typical Fall Time . . . . . . . . . . . . . . 130ns at T = 150 C
J
COLLECTOR (FLANGE)
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Description
JEDEC TO-262AA
EMITTER
The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS
are MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and the
low on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25 C and 150 C. The IGBT used is the development type
TA49113. The diode used in anti-parallel with the IGBT is the
development type TA49055.
COLLECTOR
GATE
COLLECTOR
(FLANGE)
o
o
JEDEC TO-263AB
M
A
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential.
COLLECTOR
(FLANGE)
GATE
EMITTER
PACKAGING AVAILABILITY
PART NUMBER
HGTP3N60C3D
HGT1S3N60C3D
HGT1S3N60C3DS
PACKAGE
TO-220AB
BRAND
G3N60C3D
G3N60C3D
G3N60C3D
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
TO-262AA
TO-263AB
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, i.e. HGT1S3N60C3DS9A.
G
Formerly Developmental Type TA49119.
E
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
HGTP3N60C3D, HGT1S3N60C3D
HGT1S3N60C3DS
UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
600
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
6
3
24
±20
±30
A
A
A
V
V
C
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Collector Current Pulsed (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate-Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Switching Safe Operating Area at T = 150 C, Fig. 14. . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating T > 25 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . T , T
C
C110
CM
GES
GEM
o
18A at 480V
33
0.27
-40 to 150
260
J
o
W
C
D
o
o
W/ C
C
o
C
J
STG
o
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
C
L
Short Circuit Withstand Time (Note 2) at V
NOTES:
= 10V, Fig 6 . . . . . . . . . . . . . . . . . . . . .t
8
µs
GE
SC
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
o
2. V
= 360V, T = 125 C, R = 82Ω.
CE(PK)
J
GE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
File Number 4140.1
Copyright © Harris Corporation 1997
3-9
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
o
Electrical Specifications
T
= 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
BV
TEST CONDITIONS
MIN
TYP
-
MAX
-
UNITS
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
I
= 250µA, V
= 0V
600
V
µA
mA
V
CES
C GE
o
I
V
V
= BV
= BV
T
= 25 C
-
-
250
2.0
2.0
2.2
6.0
CES
CE
CE
CES
C
C
C
C
C
o
T
T
T
T
= 150 C
-
-
-
CES
o
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
V
I
= I
,
= 25 C
1.65
1.85
5.5
CE(SAT)
C
C110
= 15V
V
GE
o
= 150 C
-
V
o
V
I
= 250µA,
= 25 C
3.0
V
GE(TH)
C
V
= V
GE
CE
Gate-Emitter Leakage Current
Switching SOA
I
V
= ±25V
-
-
-
-
±250
nA
A
GES
GE
o
SSOA
T = 150 C
V
V
= 480V
18
2
-
-
J
CE(PK)
CE(PK)
R
= 82Ω
= 15V
G
= 600V
A
V
GE
L = 1mH
Gate-Emitter Plateau Voltage
On-State Gate Charge
V
I
= I
, V
C110 CE
= 0.5 BV
CES
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8.3
10.8
13.8
5
-
13.5
17.3
-
V
nC
nC
ns
ns
ns
ns
µJ
µJ
V
GEP
C
Q
IC = IC110,
VCE = 0.5 BVCES
V
= 15V
G(ON)
GE
V
= 20V
GE
o
Current Turn-On Delay Time
Current Rise Time
t
T = 150 C
D(ON)I
J
I
= I
CE
C110
= 0.8 BV
CES
t
10
-
RI
V
V
R
CE(PK)
= 15V
GE
Current Turn-Off Delay Time
Current Fall Time
t
325
130
85
400
275
-
D(OFF)I
= 82Ω
G
L = 1mH
t
FI
Turn-On Energy
E
ON
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
E
245
2.0
22
-
OFF
V
I
I
I
= 3A
2.5
28
22
3.75
3.0
EC
EC
EC
EC
t
= 3A, dI /dt = 200A/µs
EC
ns
ns
RR
= 1A, dI /dt = 200A/µs
EC
17
o
Thermal Resistance
R
IGBT
-
C/W
θJC
o
Diode
-
C/W
NOTE:
3. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
= 0A). The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS
OFF
ending at the point where the collector current equals zero (I
CE
were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces
the true total Turn-Off Energy Loss. Turn-On losses include diode losses.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
3-10
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
Typical Performance Curves
20
18
16
14
12
10
8
20
18
16
14
12
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
CE
PULSE DURATION = 250µs
= 10V
12V
DUTY CYCLE <0.5%
o
T
= 25 C
C
10V
V
= 15V
GE
10
8
o
9.0V
8.5V
T
T
T
= 150 C
C
C
C
o
= 25 C
6
6
o
= -40 C
4
4
8.0V
7.5V
2
0
2
7.0V
0
4
6
8
10
12
14
0
2
V , COLLECTOR-TO-EMITTER VOLTAGE (V)
CE
4
6
8
10
V
, GATE-TO-EMITTER VOLTAGE (V)
GE
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
20
20
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V = 10V
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
= 15V
18
16
GE
18
16
14
12
10
8
GE
14
12
10
8
T
= 25
C
o
T
= -40 C
C
T
= -40
C
o
T
= 150 C
o
C
6
6
T
= 150
C
T
= 25 C
C
4
4
2
2
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
CE
CE
FIGURE 4. COLLECTOR-EMITTER ON - STATE VOLTAGE
FIGURE 3. COLLECTOR-EMITTER ON - STATE VOLTAGE
14
12
10
8
70
60
50
40
30
20
7
o
V
= 360V, R
= 82Ω, T = 125 C
J
V
= 15V
CE
GE
GE
6
5
4
3
2
1
0
t
SC
I
SC
6
4
10
0
2
0
25
50
75
100
125
150
10
11
12
13
14
15
o
V
, GATE-TO-EMITTER VOLTAGE (V)
T
, CASE TEMPERATURE ( C)
GE
C
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A
FUNCTION OF CASE TEMPERATURE
3-11
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
Typical Performance Curves (Continued)
500
400
20
o
o
T
= 150 C, R = 82Ω, L = 1mH, V
CE(PK)
= 480V
T
= 150 C, R = 82Ω, L = 1mH, V
= 480V
CE(PK)
J
G
J
G
V
= 10V
= 15V
GE
10
300
200
V
GE
V
= 15V
= 10V
GE
V
GE
3
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
I
, COLLECTOR-EMITTER CURRENT (A)
I
, COLLECTOR-EMITTER CURRENT (A)
CE
CE
FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
80
300
o
o
= 150 C, R = 82Ω, L = 1mH, V
T
= 480V
J
G
CE(PK)
T
= 150 C, R = 82Ω, L = 1mH, V
= 480V
CE(PK)
J
G
V
= 10V
GE
200
V
= 10V or 15V
GE
V
= 15V
GE
10
5
100
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
I
, COLLECTOR-EMITTER CURRENT (A)
I
, COLLECTOR-EMITTER CURRENT (A)
CE
CE
FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
0.5
0.4
0.3
0.8
o
o
T
= 150 C, R = 82Ω, L = 1mH, V
= 480V
CE(PK)
T
= 150 C, R = 82Ω, L = 1mH, V
= 480V
CE(PK)
J
G
J
G
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V
= 10V
GE
V
= 10V or 15V
GE
0.2
0.1
0
V
= 15V
GE
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
I
, COLLECTOR-EMITTER CURRENT (A)
I
CE
, COLLECTOR-EMITTER CURRENT (A)
CE
FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
3-12
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
Typical Performance Curves (Continued)
200
100
20
18
16
14
12
10
8
o
o
o
T
= 150 C, V
= 15V, R = 82Ω, L = 1mH
T
= 150 C, T = 75 C
C
J
GE G
J
R
= 82Ω, L = 1mH
G
f
f
= 0.05/(t
D(OFF)I
+ t
D(ON)I
)
V
= 15V
MAX1
GE
= (P - P )/(E
ON
+ E
)
OFF
MAX2
D
C
6
P
P
= ALLOWABLE DISSIPATION
D
C
= CONDUCTION DISSIPATION
4
(DUTY FACTOR = 50%)
o
V
= 10V
5
GE
2
R
= 3.75 C/W
JC
θ
10
0
1
2
3
4
6
0
100
200
300
400
500
600
I
, COLLECTOR-EMITTER CURRENT (A)
V
CE(PK)
, COLLECTOR-TO-EMITTER VOLTAGE (V)
CE
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
500
600
480
360
240
120
0
15
12
FREQUENCY = 1MHz
400
300
200
100
0
C
IES
9
6
V
= 600V
CE
V
V
= 400V
= 200V
CE
CE
C
I
REF = 1.060mA
OES
G
3
0
R
= 200Ω
L
o
C
RES
T
= 25 C
C
0
5
10
15
20
25
0
2
4
6
8
10
Q , GATE CHARGE (nC)
G
12
14
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
CE
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
0
10
0.5
0.2
t
1
0.1
-1
10
P
D
0.05
t
2
0.02
0.01
DUTY FACTOR, D = t / t
1
2
PEAK T = (P X Z
X R
) + T
JC C
SINGLE PULSE
J
D
JC
θ
θ
-2
10
-5
10
-4
10
-3
10
-2
-1
0
1
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
3-13
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
Typical Performance Curves (Continued)
30
25
20
15
10
5
15
12
9
o
T
= 25 C, dI /dt = 200A/µs
C
EC
t
rr
t
A
B
o
100 C
6
o
o
150 C
25 C
t
3
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.5
1
4
I
, FORWARD CURRENT (A)
V
, FORWARD VOLTAGE (V)
EC
EC
FIGURE 18. DIODE FORWARD CURRENT AS A FUNCTION OF
FORWARD VOLTAGE DROP
FIGURE 19. RECOVERY TIMES AS A FUNCTION OF FORWARD
CURRENT
Test Circuit and Waveform
90%
L = 1mH
RHRD460
10%
V
GE
E
E
OFF
ON
R
= 82Ω
V
G
CE
CE
90%
+
V
= 480V
DD
10%
D(OFF)I
-
I
t
t
RI
t
FI
t
D(ON)I
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
Operating Frequency Information
Operating frequency information for a typical device (Figure 13)
f
is defined by f
MAX2
= (P - P )/(E + E ). The
OFF ON
MAX2
D
C
is presented as a guide for estimating device performance allowable dissipation (P ) is defined by P = (T -
D
D
JMAX
for a specific application. Other typical frequency vs collector T )/R
. The sum of device switching and conduction
C
θJC
current (I ) plots are possible using the information shown losses must not exceed P . A 50% duty factor was used
CE
D
for a typical unit in Figures 4, 7, 8, 11 and 12. The operating (Figure 13) and the conduction losses (P ) are approxi-
C
frequency plot (Figure 13) of a typical device shows f
MAX1
or mated by P = (V
x I )/2.
CE CE
C
f
whichever is smaller at each point. The information is
MAX2
E
and E
OFF
are defined in the switching waveforms
is the integral of the instantaneous
is the inte-
ON
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
shown in Figure 21. E
power loss (I
ON
CE
x V ) during turn-on and E
CE
OFF
). Dead- gral of the instantaneous power loss during turn-off. All tail
f
is defined by f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
MAX1
time (the denominator) has been arbitrarily held to 10% of losses are included in the calculation for E
; i.e. the col-
OFF
the on- state time for a 50% duty factor. Other definitions are lector current equals zero (I
CE
= 0).
possible. t
and t
are defined in Figure 21.
D(OFF)I
D(ON)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
JMAX
.
t
is important when controlling output ripple under a
D(OFF)I
lightly loaded condition.
3-14
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in pro-
duction by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no dam-
age problems due to electrostatic discharge. IGBTs can be
handled safely if the following basic precautions are taken:
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage rat-
ing of V
. Exceeding the rated V can result in
GEM
GE
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are essen-
tially capacitors. Circuits that leave the gate open-circuited
or floating should be avoided. These conditions can result
in turn-on of the device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as ECCOSORBD LD26 or equivalent.
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate pro-
tection is required an external zener is recommended.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at
any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is
believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries.
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