HIN207IA [HARRIS]
+5V Powered RS-232 Transmitters/Receivers with 0.1Microfarad External Capacitors; + 5V供电的RS - 232发射器/接收器，提供0.1Microfarad外部电容
| 型号： | HIN207IA |
| 厂家： | 
HARRIS CORPORATION |
| 描述： | +5V Powered RS-232 Transmitters/Receivers with 0.1Microfarad External Capacitors |
| 文件： | 总14页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S E M I C O N D U C T O R
HIN200 thru HIN213
+5V Powered RS-232 Transmitters/Receivers
with 0.1Microfarad External Capacitors
August 1997
Features
Description
The HIN200-HIN213 family of RS-232 transmitters/receivers
interface circuits meet all ElA RS-232E and V.28 specifications,
and are particularly suited for those applications where ±12V is
not available. They require a single +5V power supply (except
HIN201 and HIN209) and feature onboard charge pump volt-
age converters which generate +10V and -10V supplies from
the 5V supply. The HIN203 and HIN205 require no external
capacitors and are ideally suited for applications where circuit
board space is critical. The family of devices offers a wide vari-
ety of RS-232 transmitter/receiver combinations to accommo-
date various applications (see Selection Table).
• Meets All RS-232E and V.28 Specifications
• HIN203 and HIN205 Require No External Capacitors
• Requires Only 0.1µF or Greater External Capacitors
• 120kbit/s Data Rate
• Two Receivers Active in Shutdown Mode (HIN213)
• Requires Only Single +5V Power Supply
- (+5V and +12V - HIN201 and HIN209)
• Onboard Voltage Doubler/Inverter
The HIN200, HIN206, HIN211 and HIN213 feature a low
power shutdown mode to conserve energy in battery
powered applications. In addition, the HIN213 provides two
active receivers in shutdown mode allowing for easy
“wakeup” capability.
• Low Power Consumption (Typ) . . . . . . . . . . . . . . . 5mA
• Low Power Shutdown Function (Typ) . . . . . . . . . . .1µA
• Three-State TTL/CMOS Receiver Outputs
The drivers feature true TTL/CMOS input compatibility, slew
rate-limited output, and 300Ω power-off source impedance.
The receivers can handle up to ±30V input, and have a 3kΩ
to 7kΩ input impedance. The receivers also feature hystere-
sis to greatly improve noise rejection.
• Multiple Drivers
- ±10V Output Swing for +5V lnput
- 300Ω Power-Off Source Impedance
- Output Current Limiting
- TTL/CMOS Compatible
- 30V/µs Maximum Slew Rate
Applications
• Any System Requiring RS-232 Communications Port
- Computer - Portable, Mainframe, Laptop
- Peripheral - Printers and Terminals
- Instrumentation
• Multiple Receivers
- ±30V Input Voltage Range
- 3kΩ to 7kΩ Input Impedance
- 0.5V Hysteresis to Improve Noise Rejection
- Modems
Selection Table
NUMBER OF
0.1µF
EXTERNAL
CAPACITORS
NUMBER OF
RECEIVERS
ACTIVE IN
NUMBER OF
RS-232
DRIVERS
NUMBER OF
RS-232
RECEIVERS
LOW POWER
SHUTDOWN/TTL
THREE-STATE
PART
NUMBER
POWER SUPPLY
VOLTAGE
SHUTDOWN
HIN200
HIN201
HIN202
HIN203
HIN204
HIN205
HIN206
HIN207
HIN208
HIN209
HIN211
HIN213
+5V
5
2
2
2
4
5
4
5
4
3
4
4
0
2
2
2
0
5
3
3
4
5
5
5
4 Capacitors
2 Capacitors
4 Capacitors
None
Yes/No
No/No
0
0
0
0
0
0
0
0
0
0
0
2
+5V and +9V to 13.2V
+5V
No/No
+5V
No/No
+5V
4 Capacitors
None
No/No
+5V
Yes/Yes
Yes/Yes
No/No
+5V
4 Capacitors
4 Capacitors
4 Capacitors
2 Capacitors
4 Capacitors
4 Capacitors
+5V
5V
No/No
+5V and +9V to 13.2V
No/Yes
Yes/Yes
Yes/Yes
+5V
+5V
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
File Number 3980.6
Copyright © Harris Corporation 1997
8-3
HIN200 thru HIN213
Ordering Information
TEMP.
o
TEMP.
RANGE ( C)
o
PART NO.
HIN200CB
HIN200IB
HIN201CB
HIN201IB
HIN202CP
HIN202CB
HIN202IP
HIN202CA
HIN202IA
HIN202IB
HIN202CBN
HIN202IBN
HIN203CP
HIN203CB
HIN204CB
HIN204IB
HIN205CP
HIN206CP
HIN206CB
HIN206CA
HIN206IP
HIN206IB
HIN206IA
HIN207CP
RANGE ( C)
0 to 70
PACKAGE
20 Ld SOIC
PKG. NO.
M20.3
M20.3
M16.3
M16.3
E16.3
PART NO.
HIN207CB
HIN207CA
HIN207IP
HIN207IB
HIN207IA
HIN208CP
HIN208CB
HIN208CA
HIN208IP
HIN208IB
HIN208IA
HIN209CP
HIN209CB
HIN209IP
HIN209IB
HIN211CB
HIN211CA
HIN211IB
HIN211IA
HIN213CB
HIN213CA
HIN213IB
HIN213IA
PACKAGE
24 Ld SOIC
PKG. NO.
M24.3
0 to 70
-40 to 85
0 to 70
20 Ld SOIC
0 to 70
24 Ld SSOP
24 Ld PDIP (N)
24 Ld SOIC
24 Ld SSOP
24 Ld PDIP (N)
24 Ld SOIC
24 Ld SSOP
24 Ld PDIP (N)
24 Ld SOIC
24 Ld SSOP
24 Ld PDIP (N)
24 Ld SOIC
24 Ld PDIP (N)
24 Ld SOIC
28 Ld SOIC
28 Ld SSOP
28 Ld SOIC
28 Ld SSOP
28 Ld SOIC
28 Ld SSOP
28 Ld SOIC
28 Ld SSOP
M24.209
E24.3
16 Ld SOIC (W)
16 Ld SOIC (W)
16 Ld PDIP
-40 to 85
-40 to 85
-40 to 85
0 to 70
-40 to 85
0 to 70
M24.3
M24.209
E24.3
0 to 70
16 Ld SOIC (W)
16 Ld PDIP
M16.3
E16.3
-40 to 85
0 to 70
0 to 70
M24.3
16 Ld SSOP
M16.209
M16.209
M16.3
M16.15
M16.15
E20.3
0 to 70
M24.209
E24.3
-40 to 85
-40 to 85
0 to 70
16 Ld SSOP
-40 to 85
-40 to 85
-40 to 85
0 to 70
16 Ld SOIC (W)
16 Ld SOIC (N)
16 Ld SOIC (N)
20 Ld PDIP
M24.3
M24.209
E24.3
-40 to 85
0 to 70
0 to 70
M24.3
0 to 70
20 Ld SOIC (W)
16 Ld SOIC (W)
16 Ld SOIC (W)
24 Ld PDIP (W)
24 Ld PDIP (N)
24 Ld SOIC
M20.3
M16.3
M16.3
E24.3
-40 to 85
-40 to 85
0 to 70
E24.3
0 to 70
M24.3
-40 to 85
0 to 70
M28.3
0 to 70
M28.209
M28.3
0 to 70
E24.3
-40 to 85
-40 to 85
0 to 70
0 to 70
M24.3
M24.209
E24.3
M28.209
M28.3
0 to 70
24 Ld SSOP
-40 to 85
-40 to 85
-40 to 85
0 to 70
24 Ld PDIP (N)
24 Ld SOIC
0 to 70
M28.209
M28.3
M24.3
M24.209
E24.3
-40 to 85
-40 to 85
24 Ld SSOP
M28.209
24 Ld PDIP (N)
Pin Descriptions
PIN
FUNCTION
V
Power Supply Input 5V ±10%, 5V ±5% (HIN200, HIN207, HIN203, and HIN205).
CC
V+
V-
Internally generated positive supply (+10V nominal), HIN201 and HIN209 requires +9V to +13.2V.
Internally generated negative supply (-10V nominal).
Ground lead. Connect to 0V.
GND
C1+
C1-
C2+
C2-
External capacitor (+ terminal) is connected to this lead.
External capacitor (- terminal) is connected to this lead.
External capacitor (+ terminal) is connected to this lead.
External capacitor (- terminal) is connected to this lead.
T
Transmitter Inputs. These leads accept TTL/CMOS levels. An internal 400kΩ pull-up resistor to V is connected to each lead.
IN
CC
T
Transmitter Outputs. These are RS-232 levels (nominally ±10V).
OUT
R
Receiver Inputs. These inputs accept RS-232 input levels. An internal 5kΩ pull-down resistor to GND is connected to each input.
Receiver Outputs. These are TTL/CMOS levels.
IN
R
OUT
EN, EN
SD, SD
NC
Enable input. This is an active low input which enables the receiver outputs. With EN = 5V, (HIN213 EN = 0V), the outputs
are placed in a high impedance state.
Shutdown Input. With SD = 5V (HIN213 SD = 0V), the charge pump is disabled, the receiver outputs are in a high impedance
state (except R4 and R5 of HIN213) and the transmitters are shut off.
No Connect. No connections are made to these leads.
8-4
HIN200 thru HIN213
Pinouts
HIN200 (SOIC)
HIN201 (SOIC)
TOP VIEW
TOP VIEW
1
2
20
19
18
17
16
15
14
13
12
11
T3OUT
T1OUT
T2OUT
T2IN
T4OUT
T5IN
NC
1
2
3
4
5
6
7
8
16
V+
C+
C-
15 V
CC
3
14
V-
GND
4
SD
T2
13 T1
OUT
OUT
5
T1IN
T5OUT
T4IN
T3IN
V-
R2
12 R1
11 R1
10 T1
IN
IN
6
GND
R2
OUT
OUT
7
V
CC
T2
IN
IN
8
C1+
V+
9
NC
NC
9
C2-
10
C1-
C2+
+5V
7
+5V
15
+9V TO +13.2V
16
0.1µF
8
V
+
CC
C1+
V
CC
+
10
9
V+
V+
0.1µF
0.1µF
+5V TO 10V
C1-
VOLTAGE DOUBLER
1
2
11
+
12
C+
C2+
+
+12V TO -12V
VOLTAGE INVERTER
3
0.1µF
+10V TO -10V
VOLTAGE INVERTER
V-
13
2
V-
C-
0.1µF
T1
C2-
0.1µF
+
+
+5V
T1
+5V
T1
400kΩ
5
13
400kΩ
10
T1
T1
IN
OUT
OUT
T1
T2
OUT
IN
+5V
+5V
+5V
+5V
T2
+5V
T2
400kΩ
400kΩ
400kΩ
400kΩ
4
14
15
19
3
400kΩ
7
4
T2
T2
IN
T2
OUT
IN
T3
T4
11
12
1
R1
R2
R1
IN
IN
OUT
OUT
T3
T3
IN
OUT
5kΩ
5kΩ
R1
20
T4
T4
IN
OUT
6
5
R2
R2
T5
16
17
T5
SD
T5
IN
OUT
GND
GND
14
6
8-5
HIN200 thru HIN213
Pinouts (Continued)
HIN202 (PDIP, SOIC, SSOP)
HIN203 (PDIP, SOIC)
TOP VIEW
TOP VIEW
1
2
3
4
5
6
7
8
9
R2
R2
T2
T1
20
19
1
2
3
4
5
6
7
8
16
15
14
13
12
OUT
IN
C1+
V+
V
CC
IN
IN
GND
T1
R1
18 T2
OUT
OUT
C1-
C2+
C2-
V-
OUT
R1
IN
17 V-
R1
R1
T1
IN
T1
16 C2-
OUT
OUT
GND
15 C2+
11
10
9
IN
IN
V
14 V+ (C1-)
13 C1- (C1+)
CC
T2
T2
OUT
(V+) C1+
GND
R2
R2
IN
OUT
12
V- (C2+)
(V-) C2- 10
11 C2+ (C2-)
NOTE: Pin numbers in parentheses are for SOIC Package.
+5V
16
+5V
+
0.1µF
6
V
CC
T1
V
CC
+5V
+5V
1
0.1µF
2
5
400kΩ
400kΩ
C1+
+
+
+
+
T1
T2
2
+5V TO 10V
VOLTAGE INVERTER
T1
T2
IN
OUT
OUT
0.1µF
0.1µF
V+
3
4
C1-
T2
1
3
18
4
C2+
IN
+10V TO -10V
VOLTAGE INVERTER
6
V-
5
C2-
0.1µF
T1
R1
R1
R2
OUT
IN
IN
5kΩ
5kΩ
+5V
T1
14
400kΩ
11
T1
IN
OUT
OUT
19
20
R2
OUT
8 (13)
+5V
T2
11 (12)
C1+
C1-
V-
400kΩ
10
12
7
C2+
C2+
C2-
C2-
T2
T2
IN
NO
CONNECT
13 (14)
15
16
13
12 (10)
INTERNAL
-10V
SUPPLY
R1
R2
R1
IN
IN
OUT
OUT
5kΩ
R1
17
10 (11)
V-
INTERNAL
+10V
SUPPLY
14 (8)
GND
6
GND
9
V+
9
8
R2
5kΩ
R2
GND
15
8-6
HIN200 thru HIN213
Pinouts (Continued)
HIN204 (SOIC)
HIN205 (PDIP)
TOP VIEW
TOP VIEW
T4
T3
T1
T2
1
2
24
R3
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
T1
T2
T3
T4
T4
T3
V-
OUT
OUT
OUT
OUT
IN
OUT
OUT
OUT
IN
23 R3
OUT
IN
OUT
3
22 T5
T2
T1
IN
21 SD
20 EN
4
IN
IN
R2
5
IN
GND
R2
OUT
6
19 T5
OUT
V
C2-
C2+
C1-
CC
T2
7
18 R4
17 R4
IN
IN
IN
C1+
V+
T1
8
OUT
IN
R1
OUT
9
16 T4
15 T3
R1
10
IN
IN
GND 11
12
14 R5
13 R5
OUT
IN
V
CC
+5V
12
+5V
6
0.1µF
V
+
CC
+5V
T1
400kΩ
3
8
7
0.1µF
T1
T1
7
9
OUT
IN
V
+
+
CC
C1+
+
8
V+
0.1µF
0.1µF
+5V
+5V
+5V
T2
+5V TO 10V
VOLTAGE DOUBLER
400kΩ
4
2
1
C1-
T2
T3
T4
T2
IN
OUT
10
C2+
+
+10V TO -10V
VOLTAGE INVERTER
T3
T4
12
1
V-
15
16
400kΩ
400kΩ
11
T3
T4
OUT
OUT
IN
C2-
0.1µF
+5V
T1
400kΩ
4
IN
T1
T1
IN
OUT
+5V
T5
400kΩ
22
9
19
10
+5V
+5V
+5V
T2
T5
T5
OUT
IN
400kΩ
400kΩ
400kΩ
3
13
14
2
T2
T3
T2
IN
OUT
R1
R1
R2
R3
OUT
OUT
OUT
IN
IN
IN
5kΩ
5kΩ
5kΩ
R1
T3
16
15
T3
IN
OUT
5
6
R2
R3
T4
R2
R3
R4
T4
OUT
T4
IN
23
24
GND
5
17
18
R4
R4
R5
OUT
IN
5kΩ
5kΩ
14
20
13
21
R5
OUT
EN
IN
R5
SD
GND
11
8-7
HIN200 thru HIN213
Pinouts (Continued)
HIN206 (PDIP, SOIC, SSOP)
HIN207 (PDIP, SOIC, SSOP)
TOP VIEW
TOP VIEW
1
2
24
23
22
21
20
19
18
17
T3
T1
T2
T4
OUT
T3
T1
T2
24 T4
OUT
1
2
3
4
5
6
7
8
9
OUT
OUT
OUT
OUT
OUT
OUT
R2
23
22
21
20
19
18
17
16
R2
R2
T5
IN
IN
3
R2
OUT
OUT
4
R1
R1
SD
EN
T4
IN
IN
IN
5
R1
R1
T5
T4
T3
OUT
OUT
OUT
6
T2
T2
IN
IN
IN
IN
IN
IN
7
T3
IN
T1
T1
IN
8
R3
R3
GND
GND
OUT
IN
OUT
IN
9
16 R3
V
V
R3
CC
CC
10
11
12
15
14
13
V-
C1+ 10
V+ 11
C1+
V+
15 V-
C2-
14
13
C2-
C2+
C2+
C1-
C1- 12
+5V
9
+5V
9
0.1µF
0.1µF
10
10
+
12
V
V
+
+
CC
C1+
+
+
CC
C1+
+
12
11
11
V+
V-
0.1µF
0.1µF
V+
V-
0.1µF
0.1µF
+5V TO 10V
VOLTAGE DOUBLER
+5V TO 10V
VOLTAGE DOUBLER
C1-
C1-
13
+
14
13
+
14
C2+
C2+
+10V TO -10V
VOLTAGE INVERTER
+10V TO -10V
VOLTAGE INVERTER
15
2
15
2
C2-
0.1µF
C2-
0.1µF
+5V
+5V
T1
T2
T1
400kΩ
7
400kΩ
7
T1
T1
IN
T1
T1
IN
OUT
OUT
+5V
+5V
+5V
+5V
T2
400kΩ
6
3
1
400kΩ
6
3
T2
T2
IN
T2
T2
IN
OUT
OUT
+5V
+5V
+5V
T3
T4
T3
T4
T5
400kΩ
400kΩ
18
400kΩ
400kΩ
400kΩ
18
19
1
T3
T4
T3
IN
T3
T4
T5
T3
IN
OUT
OUT
OUT
OUT
19
5
24
4
24
T4
IN
T4
IN
OUT
R1
R1
IN
IN
OUT
21
5
20
4
T5
IN
5kΩ
5kΩ
R1
R1
R1
22
23
IN
OUT
R2
R2
OUT
5kΩ
5kΩ
R1
R2
22
17
23
16
R2
R2
IN
OUT
17
20
16
21
R3
R3
IN
OUT
EN
R2
5kΩ
R3
SD
R3
R3
IN
OUT
GND
5kΩ
R3
8
GND
8
8-8
HIN200 thru HIN213
Pinouts (Continued)
HIN208 (PDIP, SOIC, SSOP)
HIN209 (PDIP, SOIC, SSOP)
TOP VIEW
TOP VIEW
R1
OUT
T1
T2
1
2
24
23
22
T2
T1
T3
1
2
24
23
22
21
20
19
18
17
16
15
14
13
IN
OUT
OUT
R1
R3
R3
T4
IN
IN
OUT
IN
R2
3
R2
GND
3
OUT
IN
IN
OUT
V
21 R2
20 T2
4
R2
4
CC
OUT
IN
5
T1
IN
T4
T3
T2
V+
C1+
C1-
V-
5
OUT
OUT
OUT
6
19 T1
R3
18
R1
6
OUT
IN
7
R1
7
IN
IN
IN
8
17 R3
16 T3
R4
R4
V-
GND
8
OUT
OUT
R5
IN
9
V
9
IN
CC
IN
R5
10
11
15
14
NC*
EN
C1+
V+
10
11
12
OUT
OUT
R4
C2-
R4 12
IN
13 T3
OUT
C1-
C2+
+9V TO +13.2V
5
+5V
9
+5V
4
0.1µF
10
+
12
6
7
V
+
CC
V
CC
C1+
C1+
11
+
V+
V-
0.1µF
0.1µF
V+
0.1µF
+5V TO 10V
VOLTAGE DOUBLER
+12V TO -12V
VOLTAGE INVERTER
C1-
8
C1-
V-
13
+
14
0.1µF
C2+
+10V TO -10V
VOLTAGE INVERTER
+
15
2
+5V
T1
19
20
C2-
400kΩ
0.1µF
24
23
T1
T1
T2
T3
+
OUT
OUT
OUT
IN
IN
IN
+5V
T1
T2
400kΩ
5
+5V
T2
T3
T1
T1
IN
OUT
400kΩ
400kΩ
T2
T3
+5V
+5V
+5V
+5V
400kΩ
18
19
1
T2
T2
IN
OUT
16
1
13
2
T3
T4
400kΩ
400kΩ
24
T3
T4
R1
T3
IN
R1
OUT
OUT
IN
5kΩ
R1
21
6
20
7
T4
IN
OUT
22
17
11
21
18
12
9
R2
R3
R4
R5
R2
R3
R4
R5
IN
IN
IN
OUT
OUT
OUT
R1
R1
IN
OUT
5kΩ
5kΩ
5kΩ
5kΩ
R2
R3
R4
5kΩ
R1
4
22
17
3
R2
R3
R4
R2
R3
R4
IN
IN
IN
OUT
OUT
OUT
5kΩ
5kΩ
5kΩ
R2
R3
23
16
10
14
IN
OUT
EN
R5
R4
GND
GND
8
3
8-9
HIN200 thru HIN213
Pinouts (Continued)
HIN211 (SOIC, SSOP)
TOP VIEW
HIN213 (SOIC, SSOP)
TOP VIEW
28 T4
OUT
T3
T1
T2
1
2
28 T4
OUT
T3
T1
T2
1
2
3
4
5
6
7
8
9
OUT
OUT
OUT
OUT
OUT
OUT
27 R3
26 R3
27 R3
IN
IN
3
26 R3
OUT
OUT
25 SD
24 EN
23 R4
25 SD
24 EN
23 R4
R2
R2
4
IN
IN
R2
R2
5
OUT
OUT
T2
T1
T2
6
IN
IN
IN
IN
IN
IN
22 R4
T1
7
22 R4
OUT
OUT
21 T4
R1
OUT
8
21 T4
R1
IN
IN
IN
IN
OUT
20
R1
9
20
T3
R1
T3
IN
IN
19 R5
18 R5
17 V-
GND
10
11
12
13
14
19 R5
18 R5
17 V-
GND 10
11
OUT
IN
OUT
IN
V
V
CC
CC
C1+ 12
V+ 13
C1+
V+
16 C2-
15 C2+
16
C2-
C1-
15 C2+
C1- 14
NOTE: R4 AND R5 ACTIVE IN SHUTDOWN
+5V
11
+5V
11
0.1µF
12
+
14
0.1µF
12
V
+
+
CC
C1+
V
+
CC
C1+
13
+
14
13
V+
V-
0.1µF
0.1µF
V+
+5V TO 10V
VOLTAGE DOUBLER
0.1µF
0.1µF
+5V TO 10V
VOLTAGE DOUBLER
C1-
C1-
15
+
16
15
+
16
C2+
C2+
+10V TO -10V
VOLTAGE INVERTER
17
2
+10V TO -10V
VOLTAGE INVERTER
17
V-
C2-
0.1µF
C2-
0.1µF
+
+5V
T1
+5V
T1
400kΩ
7
2
400kΩ
7
T1
T1
IN
OUT
T1
T1
IN
OUT
+5V
+5V
+5V
T2
T3
T4
+5V
+5V
+5V
T2
T3
T4
400kΩ
400kΩ
400kΩ
6
3
1
400kΩ
400kΩ
400kΩ
6
3
1
T2
T3
T4
T2
IN
OUT
T2
T3
T4
T2
IN
OUT
20
20
T3
IN
OUT
OUT
T3
IN
OUT
OUT
21
8
28
9
21
8
28
9
T4
IN
T4
IN
R1
R1
IN
OUT
R1
R1
IN
OUT
5kΩ
R1
5kΩ
R1
5
26
22
4
5
26
22
4
R2
R3
R4
R5
R2
R3
R4
R5
IN
IN
IN
OUT
OUT
OUT
R2
R3
R4
R5
R2
R3
R4
R5
IN
IN
IN
OUT
OUT
OUT
5kΩ
5kΩ
5kΩ
5kΩ
R2
R3
R4
5kΩ
5kΩ
5kΩ
5kΩ
R2
R3
R4
27
23
27
23
19
24
18
25
19
24
18
25
IN
OUT
IN
OUT
EN
R5
R5
SD
EN
SD
GND
GND
10
10
8-10
HIN200 thru HIN213
Absolute Maximum Ratings
Thermal Information
o
V
to Ground . . . . . . . . . . . . . . . . . . . . . . (GND -0.3V) <V
< 6V Thermal Resistance (Typical, Note 1)
θJA ( C/W)
CC
V+ to Ground . . . . . . . . . . . . . . . . . . . . . . . . (V
CC
-0.3V) <V+ < 12V
CC
16 Ld SOIC (N) Package. . . . . . . . . . . . . . . . . . . . .
16 Ld SOIC (W) Package . . . . . . . . . . . . . . . . . . . .
16 Ld SSOP Package . . . . . . . . . . . . . . . . . . . . . . .
16 Ld PDIP Package . . . . . . . . . . . . . . . . . . . . . . . .
20 Ld SOIC Package. . . . . . . . . . . . . . . . . . . . . . . .
24 Ld SOIC Package. . . . . . . . . . . . . . . . . . . . . . . .
24 Ld SSOP Package . . . . . . . . . . . . . . . . . . . . . . .
24 Ld PDIP (N) Package . . . . . . . . . . . . . . . . . . . . .
24 Ld PDIP (W) Package. . . . . . . . . . . . . . . . . . . . .
28 Ld SOIC Package. . . . . . . . . . . . . . . . . . . . . . . .
28 Ld SSOP Package . . . . . . . . . . . . . . . . . . . . . . .
115
100
155
90
100
75
135
75
60
V- to Ground . . . . . . . . . . . . . . . . . . . . . . . -12V < V- < (GND +0.3V)
Input Voltages
T
R
. . . . . . . . . . . . . . . . . . . . . . . . . (V- -0.3V) < V < (V+ +0.3V)
IN
IN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
IN
Output Voltages
T
R
. . . . . . . . . . . . . . . . . . . . (V- -0.3V) < V
. . . . . . . . . . . . . . . . . . (GND -0.3V) < V
< (V+ +0.3V)
< (V+ +0.3V)
OUT
TXOUT
RXOUT
OUT
Short Circuit Duration
T
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous
OUT
70
100
OUT
o
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150 C
Maximum Storage Temperature Range . . . . . . . . . . .-40 C to 85 C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300 C
o
o
Operating Conditions
o
Temperature Range
(SOIC and SSOP - Lead Tips Only)
o
o
HIN-XXXCX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0 C to 70 C
o
o
HIN-XXXIX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 C to 85 C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θ is measured with the component mounted on an evaluation PC board in free air.
JA
Electrical Specifications Test Conditions: V = +5V ±10%, (V = +5V ±5% HIN200, HIN203, HIN205, HIN207); V+ = 9V to
CC
CC
13.2V, HIN201 and HIN209), C1-C4 = 0.1µF; T = Operating Temperature Range
A
PARAMETER
TEST CONDITIONS
MIN
TYP
±9
8
MAX
±10
15
UNITS
V
Output Voltage Swing, T
Transmitter Outputs, 3kΩ to Ground
±5
-
OUT
Power Supply Current, I
No Load,
T = 25 C
A
HIN202, HIN203
mA
CC
o
HIN200, HIN204-208,
HIN211-213
-
11
20
mA
HIN201, HIN209
HIN201
-
-
-
-
0.4
5.0
7.0
1
1
mA
mA
mA
µA
V+ Power Supply Current, I
CC
No Load,
o
10
15
10
T = 25 C
A
HIN209
o
Shutdown Supply Current, I (SD)
CC
T = 25 C
HIN200, HIN205,
HIN206, HIN211
A
HIN213
-
15
-
50
0.8
-
µA
V
Input Logic Low, T , EN, V
IN lL
T
T
, EN, SD, EN, SD
-
IN
IN
Input Logic High, V
lH
2.0
2.4
-
-
V
EN, SD, EN, SD
-
-
V
Logic Pullup Current, I
T
= 0V
15
-
200
+30
7.0
-
µA
V
P
IN
RS-232 Input Voltage Range, V
IN
-30
3.0
0.8
0.6
o
Receiver Input Impedance, R
IN
T = 25 C, V = ±3V
5.0
1.2
1.5
kΩ
V
A
IN
Receiver Input Low Threshold, V (H-L)
IN
V
= 5V,
Active Mode
CC
T = 25 C
o
A
Shutdown Mode
-
V
HIN213 R4 and R5
8-11
HIN200 thru HIN213
Electrical Specifications Test Conditions: V = +5V ±10%, (V = +5V ±5% HIN200, HIN203, HIN205, HIN207); V+ = 9V to
CC
CC
13.2V, HIN201 and HIN209), C1-C4 = 0.1µF; T = Operating Temperature Range (Continued)
A
PARAMETER
TEST CONDITIONS
MIN
TYP
1.7
MAX
2.4
UNITS
Receiver Input High Threshold, V (L-H)
IN
V
= 5V,
Active Mode
-
-
V
V
CC
T = 25 C
o
A
Shutdown Mode
1.5
2.4
HIN213 R4 and R5
Receiver Input Hysteresis, V
HYST
V
= 5V
0.2
-
0.5
0.1
1.0
0.4
V
V
CC
No Hysteresis in Shutdown Mode
TTL/CMOS Receiver Output Voltage Low, V
I
= 1.6mA
OL
OUT
(HIN201-HIN203, I
= 3.2mA)
OUT
TTL/CMOS Receiver Output Voltage High, V
I
= -1mA
3.5
4.6
400
200
0.5
0.5
0.5
-
-
V
ns
OH
OUT
Output Enable Time, t
HIN205, HIN206, HIN209, HIN211, HIN213
HIN205, HIN206, HIN209, HIN211, HIN213
HIN213 SD = 0V, R4, R5
-
-
-
EN
Output Disable Time, t
DIS
-
ns
Transmit, Receive Propagation Delay, t
-
40
10
10
30
µs
PD
HIN213 SD = V , R1 - R5
CC
-
µs
HIN200 - HIN211
-
µs
Transmit Transition Region Slew Rate, SR
R
C
= 3kΩ,
= 2500pF
HIN200, HIN204 to
HIN211, HIN213
3
V/µs
T
L
L
Measured from
+3V to -3V or
-3V to +3V
HIN201, HIN202,
HIN203
3
-
30
V/µs
(Note 1)
Output Resistance, R
OUT
V
= V+ = V- = 0V, V
OUT
= ±2V
300
-
-
-
Ω
CC
RS-232 Output Short Circuit Current, I
TTL/CMOS Receiver Output Leakage
T
Shorted to GND
-
-
±10
0.05
mA
µA
SC
OUT
EN = V , EN = 0, 0V < R
CC OUT
< V
±10
CC
NOTE:
1. Guaranteed by design.
VOLTAGE DOUBLER
VOLTAGE INVERTER
S5
S1
S3
S2
C2+
C1+
V+ = 2V
S6
CC
V
GND
CC
+
+
+
+
C3
C2
C4
C1
-
-
-
-
V
GND
CC
GND
V- = - (V+)
C1-
S4
C2-
S7
S8
RC
OSCILLATOR
FIGURE 1. CHARGE PUMP
8-12
HIN200 thru HIN213
0V to V . The output will be low whenever the input is
greater than 2.4V and high whenever the input is floating or
Detailed Description
CC
The HIN200 thru HIN213 family of RS-232 transmitters/receiv-
ers are powered by a single +5V power supply (except HIN201
and HIN209), feature low power consumption, and meet all ElA
RS232C and V.28 specifications. The circuit is divided into
three sections: the charge pump, transmitter, and receiver.
driven between +0.8V and -30V. The receivers feature 0.5V
hysteresis (except during shutdown) to improve noise rejec-
tion. The receiver Enable line (EN, on HIN206, HIN209, and
HIN211, EN on HIN213) when unasserted, disables the
receiver outputs, placing them in the high impedance mode.
The receiver outputs are also placed in the high impedance
state when in shutdown mode (except HIN213 R4 and R5).
Charge Pump
An equivalent circuit of the charge pump is illustrated in
Figure 1. The charge pump contains two sections: the
voltage doubler and the voltage inverter. Each section is
driven by a two phase, internally generated clock to gener-
ate +10V and -10V. The nominal clock frequency is
125kHz. During phase one of the clock, capacitor C1 is
V+
V
CC
400kΩ
300Ω
charged to V . During phase two, the voltage on C1 is
T
CC
XIN
XIN
T
OUT
added to V , producing a signal across C3 equal to twice
CC
GND < T
< V
CC
V- < V
< V+
TOUT
V
. During phase two, C2 is also charged to 2V , and
CC
then during phase one, it is inverted with respect to ground
CC
V-
to produce a signal across C4 equal to -2V . The charge
CC
pump accepts input voltages up to 5.5V. The output
impedance of the voltage doubler section (V+) is approxi-
mately 200Ω, and the output impedance of the voltage
inverter section (V-) is approximately 450Ω. A typical
application uses 0.1µF capacitors for C1-C4, however, the
value is not critical. Increasing the values of C1 and C2 will
lower the output impedance of the voltage doubler and
inverter, increasing the values of the reservoir capacitors,
C3 and C4, lowers the ripple on the V+ and V- supplies.
FIGURE 2. TRANSMITTER
V
CC
R
XIN
R
OUT
-30V < R
< +30V
XIN
GND < V
< V
CC
5kΩ
ROUT
GND
During shutdown mode (HIN200, HIN206 and HIN211,
SD = V , HIN213, SD = 0V) the charge pump is turned off,
CC
V+ is pulled down to V , V- is pulled up to GND, and the
CC
FIGURE 3. RECEIVER
supply current is reduced to less than 10µA. The transmitter
outputs are disabled and the receiver outputs (except for
HIN213, R4 and R5) are placed in the high impedance state.
Transmitters
T
IN
OR
The transmitters are TTL/CMOS compatible inverters which
translate the inputs to RS-232 outputs. The input logic thresh-
old is about 26% of V , or 1.3V for V
input results in a voltage of between -5V and V- at the output,
and a logic 0 results in a voltage between +5V and (V+ -0.6V).
Each transmitter input has an internal 400kΩ pullup resistor
so any unused input can be left unconnected and its output
remains in its low state. The output voltage swing meets the
RS-232C specifications of ±5V minimum with the worst case
conditions of: all transmitters driving 3kΩ minimum load
R
IN
T
= 5V. A logic 1 at the
OUT
OR
V
CC CC
OL
V
OL
R
OUT
t
t
PLH
PHL
t
t
PHL + PLH
2
AVERAGE PROPAGATION DELAY =
FIGURE 4. PROPAGATION DELAY DEFINITION
impedance, V
= 4.5V, and maximum allowable operating
CC
temperature. The transmitters have an internally limited output
slew rate which is less than 30V/µs. The outputs are short cir-
cuit protected and can be shorted to ground indefinitely. The
powered down output impedance is a minimum of 300Ω with
HIN213 Operation in Shutdown
The HIN213 features two receivers, R4 and R5, which
remain active in shutdown mode. During normal operation
the receivers propagation delay is typically 0.5µs. This prop-
agation delay may increase slightly during shutdown. When
entering shut down mode, receivers R4 and R5 are not valid
±2V applied to the outputs and V
= 0V.
CC
Receivers
The receiver inputs accept up to ±30V while presenting the
required 3kΩ to 7kΩ input impedance even if the power is off
for 80µs after SD = V . When exiting shutdown mode, all
IL
receiver outputs will be invalid until the charge pump circuitry
reaches normal operating voltage. This is typically less than
2ms when using 0.1µF capacitors.
(V
= 0V). The receivers have a typical input threshold of
CC
1.3V which is within the ±3V limits, known as the transition
region, of the RS-232 specifications. The receiver output is
8-13
HIN200 thru HIN213
Typical Performance Curves
12
12
0.1µF
10
8
10
8
V+ (V
CC
= 5V)
6
6
V+ (V
= 4V)
= 5V)
CC
V- (V
= 4V)
CC
4
4
o
T
= 25 C
A
2
0
2
V- (V
CC
30
TRANSMITTER OUTPUTS
OPEN CIRCUIT
0
3.0
4.0
4.5
CC
5.0
5.5
6.0
0
5
10
15
|I
20
| (mA)
25
35
3.5
V
LOAD
FIGURE 5. V- SUPPLY VOLTAGE vs V
CC
FIGURE 6. V+, V- OUTPUT VOLTAGE vs LOAD
Test Circuits (HIN202)
+4.5V TO
+5.5V INPUT
C1+
V+
1
2
3
16
15
14
V
CC
GND
T1
-
+
0.1µF
C3
C1-
OUT
V
C1+
V+
1
2
3
4
5
6
7
8
16
CC
4 C2+
5 C2-
R1 13
IN
+
0.1µF
3kΩ
GND 15
R1
12
11
10
9
OUT
C1
-
T1
OUT
C1-
C2+
C2-
V-
14
13
12
11
T1 OUTPUT
T1
6 V-
T2
IN
IN
R1
RS-232 ±30V INPUT
TTL/CMOS OUTPUT
TTL/CMOS INPUT
TTL/CMOS INPUT
TTL/CMOS OUTPUT
+
IN
T2
0.1µF
7
8
OUT
C2
-
R1
OUT
R2
R2
-
IN
+
OUT
T1
IN
0.1µF C4
T2
T2 10
IN
OUT
3kΩ
R
= V /I T2
IN
OUT
OUT
R2
9
R2
OUT
IN
T1
OUT
T2
OUTPUT
V
= ±2V
A
IN
RS-232
±30V INPUT
FIGURE 7. GENERAL TEST CIRCUIT
FIGURE 8. POWER-OFF SOURCE RESISTANCE
CONFIGURATION
8-14
HIN200 thru HIN213
Application Information
+5V
-
+
The HINXXX may be used for all RS-232 data terminal and
communication links. It is particularly useful in applications
where ±12V power supplies are not available for conven-
tional RS-232 interface circuits. The applications presented
represent typical interface configurations.
16
CTR (20) DATA
TERMINAL READY
1
+
C1
0.1µF
3
4
DSRS (24) DATA
SIGNALING RATE
SELECT
-
HIN202
6
+
-
+
C2
0.1µF
RS-232
INPUTS AND OUTPUTS
5
-
A simple duplex RS-232 port with CTS/RTS handshaking is
illustrated in Figure 9. Fixed output signals such as DTR
(data terminal ready) and DSRS (data signaling rate select)
is generated by driving them through a 5kΩ resistor
connected to V+.
T1
11
14
TD
TD (2) TRANSMIT DATA
T2
10
12
7
RTS (4) REQUEST TO SEND
RD (3) RECEIVE DATA
INPUTS RTS
OUTPUTS
13
RD
TTL/CMOS
R2
R1
9
8
In applications requiring four RS-232 inputs and outputs
(Figure 10), note that each circuit requires two charge pump
capacitors (C1 and C2) but can share common reservoir
capacitors (C3 and C4). The benefit of sharing common res-
ervoir capacitors is the elimination of two capacitors and the
reduction of the charge pump source impedance which
effectively increases the output swing of the transmitters.
CTS
CTS (5) CLEAR TO SEND
15
SIGNAL GROUND (7)
FIGURE 9. SIMPLE DUPLEX RS-232 PORT WITH CTS/RTS
HANDSHAKING
1
4
+
+
C1
0.1µF
C2
0.1µF
HIN202
T1
5
3
-
-
11
14
TD
RTS
RD
TD (2) TRANSMIT DATA
RTS (4) REQUEST TO SEND
RD (3) RECEIVE DATA
T2
10
12
7
INPUTS
OUTPUTS
TTL/CMOS
13
R2
R1
9
8
CTS
CTS (5) CLEAR TO SEND
15
V
16
CC
6
6
2
2
C4
C3
+5V
-
-
V- V+
RS-232
INPUTS AND OUTPUTS
0.2µF
0.2µF
V
16
4
CC
HIN202
T1
1
+
+
C1
0.1µF
C2
0.1µF
5
3
-
-
11
14
DTR
DSRS
DCD
R1
DTR (20) DATA TERMINAL READY
DSRS (24) DATA SIGNALING RATE SELECT
DCD (8) DATA CARRIER DETECT
R1 (22) RING INDICATOR
T2
10
12
7
INPUTS
OUTPUTS
TTL/CMOS
13
R2
R1
9
8
15
SIGNAL GROUND (7)
FIGURE 10. COMBINING TWO HIN202s FOR 4 PAIRS OF RS-232 INPUTS AND OUTPUTS
8-15
HIN200 thru HIN213
Die Characteristics
DIE DIMENSIONS:
PASSIVATION:
160 mils x 140 mils
Type: Nitride over Silox
Nitride Thickness: 8kÅ
Silox Thickness: 7kÅ
METALLIZATION:
Type: Al
Thickness: 10kÅ ±1kÅ
TRANSISTOR COUNT:
238
SUBSTRATE POTENTIAL
PROCESS:
V+
CMOS Metal Gate
Metallization Mask Layout
HIN211
SHD
EN
R4
R4
OUT
T4 T3
IN IN
R5
R5
IN
IN
OUT
R3
OUT
V-
C2-
R3
IN
T4
OUT
C2+
C1-
T3
OUT
T1
T2
OUT
V+
OUT
C1+
R2
IN
V
CC
R2
OUT
T2 T1 R1
IN IN OUT
R1
GND
IN
8-16
相关型号：
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