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IRF511 [HARRIS]

4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs; 4.9A ， 5.6A和， 80V和100V ， 0.54和0.74 Ohm的N通道功率MOSFET
IRF511
元器件型号： IRF511
生产厂家： HARRIS CORPORATION    HARRIS CORPORATION
描述和应用：

4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs
4.9A ， 5.6A和， 80V和100V ， 0.54和0.74 Ohm的N通道功率MOSFET
PDF文件： 总7页 (文件大小：71K)
下载文档：  下载PDF数据表文档文件
型号参数：IRF511参数
 查看货源

IRF511-009PBF

 Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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1 IRF

IRF511-010PBF

 Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF511-013

 Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 IRF

IRF511-013PBF

 Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF511R

 TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5.6A I(D) | TO-220AB

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36 ETC

IRF512

 N-Channel Power MOSFETs, 5.5 A, 60-100V

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114 FAIRCHILD

IRF512

 N-Channel Enhancement-Mode Vertical DMOS Power FETs

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52 SUPERTEX

IRF512

 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs

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48 HARRIS

IRF512

 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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1 MOTOROLA

IRF512

 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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2 VISHAY

IRF512R

 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB

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58 ETC

IRF513

 N-Channel Power MOSFETs, 5.5 A, 60-100V

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161 FAIRCHILD

IRF513

 N-Channel Enhancement-Mode Vertical DMOS Power FETs

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50 SUPERTEX

IRF513

 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs

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85 HARRIS

IRF513

 IRF513

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0 TI
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