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S30GY9C [HB]

Highest Flux Yellow; 高通量黄
S30GY9C
元器件型号： S30GY9C
生产厂家： HB ELECTRONIC COMPONENTS    HB ELECTRONIC COMPONENTS
描述和应用：

Highest Flux Yellow
高通量黄
PDF文件： 总3页 (文件大小：119K)
下载文档：  下载PDF数据表文档文件
型号参数：S30GY9C参数
 查看货源

S30KG2C

 Highest Flux Green

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34 HB

S30L60

 Super Fast Recovery Rectifiers(600V 30A)

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101 SHINDENGEN

S30MS01GP25BAW000

 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit⑩ Technology

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19 SPANSION

S30MS01GP25BAW002

 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit⑩ Technology

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8 SPANSION

S30MS01GP25BAW003

 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit⑩ Technology

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17 SPANSION

S30MS01GP25BAW010

 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit⑩ Technology

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7 SPANSION

S30MS01GP25BAW012

 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit⑩ Technology

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9 SPANSION

S30MS01GP25BAW013

 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit⑩ Technology

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18 SPANSION

S30MS01GP25BAW500

 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit⑩ Technology

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53 SPANSION

S30MS01GP25BAW502

 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit⑩ Technology

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10 SPANSION

S30MS01GP25BAW503

 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit⑩ Technology

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11 SPANSION

S30MS01GP25BAW510

 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit⑩ Technology

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12 SPANSION

S30MS01GP25BAW512

 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit⑩ Technology

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15 SPANSION

S30MS01GP25BAW513

 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit⑩ Technology

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16 SPANSION

S30MS01GP25BFW000

 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit⑩ Technology

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6 SPANSION
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