1.5KE540 [HDSEMI]
DO-27 Plastic-Encapsulate Diodes;
| 型号： | 1.5KE540 |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | DO-27 Plastic-Encapsulate Diodes |
| 文件： | 总7页 (文件大小：1667K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1.5KE SERIES
DO-27 Plastic-Encapsulate Diodes
Transient Voltage Suppressor Diodes
Features
●
PPP
●VRWM
1500W
DO-27
6.8V- 540V
●
Glass passivated chip
Applications
●
Clamping Voltage
Marking
●1.5KEXXA/CA
Bi-directional
Uni-direction
:
XX From 6.8 To540
Item
Peak power dissipation
Peak pulse current
Power dissipation
Symbol Unit
Conditions
Max
1500
P
W
A
PPM
with a 10/1000us waveform
with a 10/1000us waveform
on infinite heat sink at TL=75℃
I
PPM
See Next Table
6.5
P
D
W
I
Peak forward surge current
A
FSM
8.3 ms single half sine-wave unidirectional only
200
Operating junction and storage
emperature range
T ,T
J
℃
STG
-55 to +175
Electrical Characteristics（T =25℃ Unless otherwise specified）
a
Item
Symbol Unit
Conditions
Max
Maximum instantaneous forward
at 25A for unidirectional only
V
V
F
3.5/5.0
Voltage（1）
junction to ambient
junction to lead
℃/W
℃/W
RθJA
RθJL
75
Thermal resistance
15.4
Notes:
VF = 3.5 V for 1.5KE220(A) and below; VF = 5.0 V for 1.5KE250(A) and above
1
H
igh Diode Semiconductor
Electrical Characteristics (T =25 unless otherwise noted)
℃
A
Maximum
Clamping
Voltage Vc
@ IPP
Breakdown Voltage VBR@IT
Maximum
Temperature
Coefficient of VBR
(%/°C)
Working Peak
Reverse
Maximum
Reverse
Leakage IR @
Maximum
Reverse Surge
Current IPP
(A)
Part
Number(U
ni)
Part
Number(Bi)
Voltage
Min(V)
Max (V)
IT(mA)
VRWM (V)
(V)
VWM (μA)
1.5KE6.8
1.5KE6.8A
1.5KE7.5
1.5KE7.5A
1.5KE8.2
1.5KE8.2A
1.5KE9.1
1.5KE9.1A
1.5KE10
1.5KE6.8C
1.5KE6.8CA
1.5KE7.5C
1.5KE7.5CA
1.5KE8.2C
1.5KE8.2CA
1.5KE9.1C
1.5KE9.1CA
1.5KE10C
1.5KE10CA
1.5KE11C
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
10
10
1000
1000
500
500
200
200
50
5.50
139
143
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
0.057
0.057
0.061
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.075
0.076
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.089
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
10
128
10
133
10
120
10
124
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
109
50
112
10
100
1.5KE10A
1.5KE11
10
103
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
92.6
96.2
86.7
89.8
78.9
82.4
68.2
70.8
63.8
66.7
56.6
59.5
51.5
54.2
47.0
49.0
43.2
45.2
38.4
40.0
34.5
36.2
31.4
32.8
28.8
30.1
1.5KE11A
1.5KE12
1.5KE11CA
1.5KE12C
1.5KE12CA
1.5KE13C
1.5KE13CA
1.5KE15C
1.5KE15CA
1.5KE16C
1.5KE16CA
1.5KE18C
1.5KE18CA
1.5KE20C
1.5KE20CA
1.5KE22C
1.5KE22CA
1.5KE24C
1.5KE24CA
1.5KE27C
1.5KE27CA
1.5KE30C
1.5KE30CA
1.5KE33C
1.5KE33CA
1.5KE36C
1.5KE36CA
1.5KE12A
1.5KE13
1.5KE13A
1.5KE15
1.5KE15A
1.5KE16
1.5KE16A
1.5KE18
1.5KE18A
1.5KE20
1.5KE20A
1.5KE22
1.5KE22A
1.5KE24
1.5KE24A
1.5KE27
1.5KE27A
1.5KE30
1.5KE30A
1.5KE33
1.5KE33A
1.5KE36
1.5KE36A
2
H
igh Diode Semiconductor
Electrical Characteristics (T =25 unless otherwise noted)
℃
A
Maximum
Clamping
Voltage Vc
@ IPP
Breakdown Voltage VBR@IT
Maximum
Temperature
Coefficient of VBR
(%/°C)
Working Peak
Reverse
Maximum
Reverse
Leakage IR @
Maximum
Reverse Surge
Current IPP
(A)
Part
Number(Uni)
Part
Number(Bi)
Voltage
Min(V)
Max (V)
IT(mA)
1.0
VRWM (V)
(V)
VWM (μA)
1.5KE39
1.5KE39C
35.1
37.1
38.7
40.9
42.3
44.7
45.9
48.5
50.4
53.2
55.8
58.9
61.2
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90.0
95.0
99.0
105
42.9
41.0
47.3
45.2
51.7
49.4
56.1
53.6
61.8
58.8
68.2
65.1
74.8
71.4
82.5
78.8
90.2
86.1
100.0
95.5
110
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
31.6
26.6
27.8
24.2
25.3
22.1
23.1
20.4
21.4
18.6
19.5
16.9
17.6
15.3
16.3
13.9
14.6
12.7
13.3
11.5
12.0
10.4
10.9
9.5
56.4
53.9
61.9
59.3
67.8
64.8
73.5
70.1
80.5
77.0
89.0
85.0
98.0
92.0
109
104
118
0.100
0.100
0.101
0.101
0.101
0.101
0.102
0.102
0.103
0.103
0.104
0.104
0.104
0.104
0.105
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.106
0.106
0.108
0.108
0.108
0.108
0.108
1.5KE39A
1.5KE43
1.5KE39CA
1.5KE43C
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
33.3
34.8
36.8
38.1
40.2
41.3
43.6
45.4
47.8
50.2
53.0
55.1
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
1.5KE43A
1.5KE47
1.5KE43CA
1.5KE47C
1.5KE47A
1.5KE51
1.5KE47CA
1.5KE51C
1.5KE51A
1.5KE56
1.5KE51CA
1.5KE56C
1.5KE56A
1.5KE62
1.5KE56CA
1.5KE62C
1.5KE62A
1.5KE68
1.5KE62CA
1.5KE68C
1.5KE68A
1.5KE75
1.5KE68CA
1.5KE75C
1.5KE75A
1.5KE82
1.5KE75CA
1.5KE82C
1.5KE82A
1.5KE91
1.5KE82CA
1.5KE91C
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
1.5KE91A
1.5KE100
1.5KE100A
1.5KE110
1.5KE110A
1.5KE120
1.5KE120A
1.5KE130
1.5KE130
1.5KE150
1.5KE150A
1.5KE160
1.5KE160A
1.5KE170
1.5KE170A
1.5KE180
1.5KE180A
1.5KE91CA
1.5KE100C
1.5KE100CA
1.5KE110C
1.5KE110CA
1.5KE120C
1.5KE120CA
1.5KE130C
1.5KE130CA
1.5KE150C
1.5KE150CA
1.5KE160C
1.5KE160CA
1.5KE170C
1.5KE170CA
1.5KE180C
1.5KE180CA
105
121
116
9.9
108
132
8.7
114
126
9.1
117
143
105
8.0
124
137
111
8.4
136
165
121
7.0
143
158
128
7.2
144
176
130
6.5
152
168
136
6.8
153
187
138
6.1
162
179
145
6.4
162
198
146
5.8
171
189
154
6.1
3
H
igh Diode Semiconductor
Electrical Characteristics (T =25 unless otherwise noted)
℃
A
Maximum
Clamping
Voltage Vc
@ IPP
Breakdown Voltage VBR@IT
Maximum
Temperature
Coefficient of VBR
(%/°C)
Working Peak
Reverse
Maximum
Reverse
Leakage IR @
Maximum
Reverse Surge
Current IPP
(A)
Part
Number(Uni)
Part
Number(Bi)
Voltage
Min(V)
Max (V)
IT(mA)
1.0
VRWM (V)
(V)
VWM (μA)
1.5KE200
1.5KE200A
1.5KE220
1.5KE220A
1.5KE250
1.5KE250A
1.5KE300
1.5KE300A
1.5KE350
1.5KE350A
1.5KE400
1.5KE400A
1.5KE440
1.5KE440A
1.5KE480
1.5KE480A
1.5KE510
1.5KE510A
1.5KE540
1.5KE540A
1.5KE200C
1.5KE200CA
1.5KE220C
1.5KE220CA
1.5KE250C
1.5KE250CA
1.5KE300C
1.5KE300CA
1.5KE350C
1.5KE350CA
1.5KE400C
1.5KE400CA
1.5KE440C
1.5KE440CA
1.5KE480C
1.5KE480CA
1.5KE510C
1.5KE510CA
1.5KE540C
1.5KE540CA
180
190
198
209
225
237
270
285
315
333
360
380
396
418
432
456
459
485
486
513
220
210
242
231
275
263
330
315
385
368
440
420
484
462
528
504
561
535
594
567
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
162
5.2
5.5
287
274
344
328
360
344
430
414
504
482
574
548
631
602
686
658
729
698
772
740
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
171
175
185
202
214
243
256
284
300
324
342
356
376
389
408
413
434
437
459
4.4
4.6
4.2
4.4
3.5
3.6
3.0
3.1
2.6
2.7
2.4
2.5
2.19
2.28
2.06
2.15
1.94
2.03
4
H
igh Diode Semiconductor
Typical Characteristics
FIG1:Peak Pulse Power Rating Curve
FIG2: Pulse Power or Current vs. Initial Junction Temperature
100
100
10
Non-Repetitive Pulse
Waveform shown in Fige.3
TA=25℃
75
50
1.0
25
0
0.1
0.1μs
0
25
50
75
100
125
150
175 200
1.0μs
10μs
100μs
1.0ms
10ms
TJ（℃）
td(μs)
FIG4: Power Derating Curve
FIG3: Pulse Waveform
8.0
150
tr=10μs
TJ=25℃
60Hz
Resistive or
Inductive Load
7.0
Pulse Width(td) is defined as
the Point where the Peak
Current Decays to 50% of IPPM
Peak Value
IPPM
6.0
5.0
100
50
0
Half Value - IPP
2
IPPM
4.0
3.0
2.0
1.0
0
L=0.375''(9.5mm)
Lead Lengths
10/1000μs Waveform as
Defined by R.E.A.
td
0
25
50
75
100
125
150
175 200
TL（℃）
0
1.0
2.0
3.0
4.0
t（ms）
FIG6:Typical Transient Thermal Impedance
FIG5: Maximum Non-Repetitive Surge Current
100
10
200
TJ=TJMax.
8.3ms Single Half Sine-Wave
100
50
1
10
0.1
0
10
100
Number of Cycles
0.001
0.01
0.1
1
10
100
1000
tp(s)
5
H
igh Diode Semiconductor
DO-27
Unit: in inches (millimeters)
JSHD
JSHD
6
H
igh Diode Semiconductor
Ammo Box Packaging Specifications For Axial Lead Rectifiers
7
H
igh Diode Semiconductor
相关型号：
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