BAV101 [HDSEMI]
MINI MELF Glass-Encapsulate Diodes;
| 型号： | BAV101 |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | MINI MELF Glass-Encapsulate Diodes |
| 文件： | 总5页 (文件大小：1470K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV10 0 - BAV10 3
HD DL10
MINI MELF Glass-Encapsulate Diodes
Small Signal Fast Switching Diodes
Features
MINI MELF(SOD- 8 0 / LL- 3 4 )
●
●
VR 50-200V
IF 250mA
Applications
●
Extreme fast switches
BAV
Item
Unit
Conditions
Symbol
10 0
10 1
10 2
10 3
200
250
VRRM
V
V
50
100
Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Voltage
150
60
120
200
V
R
60Hz Half-sine wave, Resistance
load, Ta=25℃
IF
mA
A
Forward current
250
1
Surge(Non-repetitive)Forward
Current
60Hz Half-sine wave,1 cycle,
Ta=25℃
IFSM
Junction Temperature
Storage Temperature
Power Dissipation
TJ
℃
℃
-55~+175
-55 ~ +175
400
TSTG
P tot
mW
1
H
igh Diode Semiconductor
Electrical Characteristics (T =25 unless otherwise noted)
℃
A
Item
Symbol
Max
Unit
Test Condition
IFM=1 00 mA
IFM=2 00 mA
1.00
1.25
Peak Forward
Voltage
VFM
V
Peak Reverse
Current
0.1
IRRM
uA
V RM=VR
T =25℃
a
IF=30mA to IR=30mA,
Reverse recovery time
ns
trr
50
Irr=3mA,RL=100.
Ω
Diode capacitance
Cd
5
pF
VR=0,f=1MHZ
2
H
igh Diode Semiconductor
Typical Characteristics
Figure 1. Reverse Current vs. Junction Temperature
Figure 2. Forward Current vs. Forward Voltage
1000
100
10
1000
T =25°C
j
100
10
1
Scattering Limit
Scattering Limit
1
V =V
R
RRM
0.1
0.01
0.1
200
2.0
0
40
80
120
160
0
0.4
V
0.8
– Forward Voltage ( V )
F
1.2
1.6
T – Junction Temperature ( °C )
j
Figure 3. Differential Forward Resistance vs.
Forward Current
1000
100
T =25°C
j
10
1
100
0.1
1
10
I
– Forward Current ( mA )
F
3
H
igh Diode Semiconductor
MINI MELF
0.063(1.6)
0.055(1.4)
0.020(0.5)
0.012(0.3)
0.020(0.5)
0.012(0.3)
0.146(3.7)
0.130(3.3)
Dimensions in millimeters
MINI MELF
3.5
0.7
JSHD
JSHD
4
H
igh Diode Semiconductor
Packaging Specifications for Surface Mounted Glass Diodes
1. The method of packaging and dimension are shown as below figure. (Dimension in mm)
LS-31 (MicroMELF)
LS-34 (QuadroMELF)
2,500 pcs per reel
LL-34 (MiniMELF)
DO-213AA(MiniMELF)
20,000 pcs per box
8 reels per box
100,000 pcs per carton
5 boxes per carton
185
5
H
igh Diode Semiconductor
相关型号：
BAV101/T3
DIODE 0.25 A, 120 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, SMD, 2 PIN, Signal Diode
NXP
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