BAV19WS [HDSEMI]
S O D323 Plastic-Encapsulate Diodes;
| 型号： | BAV19WS |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | S O D323 Plastic-Encapsulate Diodes 光电二极管 |
| 文件： | 总4页 (文件大小：1887K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV19WS~BAV21WS
SOD323 Plastic-Encapsulate Diodes
Small Signal Fast Switching Diodes
Features
SOD3 23
●
●
●
●
Low Reverse Current
Surface Mount Package Ideally Suited for Automatic Insertion
Fast Switching Speed
For General Purpose Switching Applications
Applications
●
Extreme fast switches
Marking
●
●
●
BAV19WS: A8
T2
T3
BAV20WS:
BAV21WS:
Value
Symbol
Parameter
Unit
BAV19WS
BAV20WS BAV21WS
VRM
VRRM
VRWM
VR(RMS)
IO
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
RMS Reverse Voltage
120
200
150
106
250
200
141
V
100
71
V
V
mA
A
Average Rectified Output Current
Non-repetitive Peak Forward Surge Current @ t=8.3ms
Power Dissipation
200
IFSM
PD
2.0
250
mW
RΘJA
Tj
Thermal Resistance from Junction to Ambient
Junction Temperature
500
℃/W
℃
150
Storage Temperature
℃
Tstg
-55~+150
Electrical Characteristics (T =25 unless otherwise noted)
℃
A
Typ
Parameter
Symbol
Test conditions
Min
Max
Unit
VR=100V
VR=150V
VR=200V
IF=100mA
IF=200mA
BAV19WS
BAV20WS
BAV21WS
0.1
0.1
0.1
1
Reverse current
IR
uA
V
Forward voltage
VF
1.25
5
Total capacitance
Ctot
trr
VR=0V,f=1MHz
IF= IR =30mA, Irr=0.1*IR , RL=100Ω
pF
ns
Reverse recovery time
50
1
H
igh Diode Semiconductor
Typical Characteristics
Forward Characteristics
Reverse Characteristics
1000
400
300
100
Ta=100℃
100
30
10
30
10
Ta=25℃
3
1
3
1
0.3
0.1
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
50
100
150
200
250
FORWARD VOLTAGE VF (V)
REVERSE VOLTAGE VR (V)
Power Derating Curve
Capacitance Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
300
250
200
150
100
50
Ta=25℃
f=1MHz
0
0
5
10
15
20
0
25
50
75
100
125
150
REVERSE VOLTAGE VR (V)
AMBIENT TEMPERATURE Ta (℃)
2
H
igh Diode Semiconductor
SOD323 Package Outline Dimensions
SOD323 Suggested Pad Layout
JSHD
JSHD
3
H
igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices-SOD323
2.9
1.46
1.25
4
H
igh Diode Semiconductor
相关型号：
BAV19WS-E3-18
Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2
VISHAY
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