BZT52C3V3S [HDSEMI]
SOD323 Plastic-Encapsulate Diodes;
| 型号： | BZT52C3V3S |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | SOD323 Plastic-Encapsulate Diodes 测试 光电二极管 |
| 文件： | 总5页 (文件大小：1895K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BZT52C2V4S THRU BZT52C39S
SOD323 Plastic-Encapsulate Diodes
Zener Diodes
Features
SOD3 23
●
Pd
200mW
2.4V- 39V
●Vz
Applications
● Stabilizing Voltage
Item
Power dissipation
Zener current
Unit
mW
mA
Conditions
Max
200
P
Symbol
Pd
TA=25℃
IZ
/VZ
Tj
Maximum junction temperature
Storage temperature range
℃
℃
150
Tstg
-65 to +150
Electrical Characteristics（T =25℃ Unless otherwise specified）
a
Item
Symbol Unit
Conditions
Max
Thermal resistance
RθJA
VF
℃/W
Between junction and ambient
625
Forward voltage
V
IF =10mA
0.9
1
H
igh Diode Semiconductor
Electrical Characteristics (T =25 unless otherwise noted)
℃
A
Maximum
Reverse
Current
(Note 2)
Typical
Test
Current
IZTC
Maximum Zener Impedance
Temperature
Coefficient
@IZTC mV/℃
Zener Voltage Range (Note 2)
(Note 3)
TYPE
Marking
VZ@IZT
IZT
ZZT@IZT
ZZK@IZK
IZK
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
IR
VR
V
Nom(V)
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
Min(V)
2.20
2.5
Max(V)
2.60
2.9
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
Ω
μA
50
20
10
5
Min
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-2.7
-2
Max
0
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
BZT52C2V4S
BZT52C2V7S
BZT52C3V0S
BZT52C3V3S
BZT52C3V6S
BZT52C3V9S
BZT52C4V3S
BZT52C4V7S
BZT52C5V1S
BZT52C5V6S
BZT52C6V2S
BZT52C6V8S
BZT52C7V5S
BZT52C8V2S
BZT52C9V1S
BZT52C10S
BZT52C11S
BZT52C12S
BZT52C13S
BZT52C15S
BZT52C16S
BZT52C18S
BZT52C20S
BZT52C22S
BZT52C24S
BZT52C27S
BZT52C30S
BZT52C33S
BZT52C36S
BZT52C39S
WX
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
600
600
600
600
600
600
600
500
480
400
150
80
1.0
1.0
0
2.8
3.2
1.0
0
3.1
3.5
1.0
0
3.4
3.8
5
1.0
0
3.7
4.1
3
1.0
0
4.0
4.6
3
1.0
0
4.4
5.0
3
2.0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13
4.8
5.4
2
2.0
5.2
6.0
1
2.0
5.8
6.6
3
4.0
0.4
6.4
7.2
2
4.0
1.2
7.0
7.9
80
1
5.0
2.5
7.7
8.7
80
0.7
0.5
0.2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
5.0
3.2
8.5
9.6
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
6.0
3.8
9.4
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
38.0
41.0
7.0
4.5
11
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
31.0
34.0
37.0
8.0
5.4
12
8.0
6.0
13
8.0
7.0
WJ
WK
WL
WM
WN
WO
WP
WQ
WR
WS
WT
15
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.1
25.2
27.3
9.2
16
10.4
12.4
14.4
16.4
18.4
21.4
24.4
27.4
30.4
33.4
14
18
16
20
18.0
20.0
22.0
25.3
29.4
33.4
37.4
41.2
22
24
27
30
33
36
39
Notes: 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2 .
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
2
H
igh Diode Semiconductor
Typical Characteristics
Zener Characteristics
(
VZ Up to 10 V
)
Zener Characteristics
(
11 V to 39 V
)
100
100
Ta =25℃
Ta =25℃
Pulsed
Pulsed
PD =200mW
4
.
2
10
10
PD =200mW
7
2
1
6
1
8
5
2
0
.
.
.
.
.
.
.
.
1
4
6
5
5
9
6
7
8
1
2
3
5
0
8
2
4
0
3
9
7
6
1
1
1
1
2
1
2
2
3
3
3
2
3
1
1
0.5
0.5
1
2
1
0
2
3
4
5
6
7
8
9
10
11
10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42
VZ, ZENER VOLTAGE (V)
VZ, ZENER VOLTAGE (V)
Temperature Coefficients
Typical Leakage Current
40
35
30
25
20
15
10
5
100
10
TYPICAL Ta VALUES
FOR BZT52C2V4S SERIES
1
VZ @ IZT
0.1
0.01
1E-3
1E-4
Ta=100
℃
0
Ta=25℃
-5
4
6
8
10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
VZ, NOMINAL ZENER VOLTAGE (V)
0
5
10
15
20
25
30
35
40
VZ, NOMINAL ZENER VOLTAGE (V)
Effect of Zener Voltage on Zener Impedance
Typical Capacitance
1000
100
10
1000
100
10
Ta=25
Z(AC)=0.1IZ(DC)
f=1kHz
℃
Ta =25
℃
I
IZ=1mA
5mA
0V BIAS
1V BIAS
BIAS AT
50% OF VZ NOM
1
1
10
100
1
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
VZ, NOMINAL ZENER VOLTAGE (V)
Power Derating Curve
250
200
150
100
50
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta
(℃)
3
H
igh Diode Semiconductor
SOD323 Package Outline Dimensions
SOD323 Suggested Pad Layout
JSHD
JSHD
4
H
igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices-SOD323
2.9
1.46
1.25
5
H
igh Diode Semiconductor
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