CP2600SC [HDSEMI]
SMB Plastic-Encapsulate Diodes;型号: | CP2600SC |
厂家: | Jiangsu High diode Semiconductor Co., Ltd |
描述: | SMB Plastic-Encapsulate Diodes |
文件: | 总5页 (文件大小:1369K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CPxxxxSC Series
SMB Plastic-Encapsulate Diodes
Thyristor Surge Suppressors
Features
● Low switching voltage
SMB
●
●
Low on-state voltage
Does not degrade surge capability after multiple surge
Events within limit
●
Fails short circuit when surged in excess of ratings
● Low Capacitance
Applications
●
Protect circuit
Parameter
Symbol
Tstg
Value
-60 to +150
-40 to +150
100
Unit
℃
Storage temperature range
Operating junction temperature range
Repetitive peak pulse current
Tj
℃
IPP
A
Symbol
VDRM
IDRM
VS
Parameter
Peak off-state voltage
Off-state current
V-I Curve
+I
IT
IS
IH
Switching voltage
Switching current
On-state voltage
On-state current
IDRM
IS
+V
-V
VT
VT
VDRM VS
IT
IH
Holding current
-I
CO
Off-state capacitance
1
H
igh Diode Semiconductor
Electrical Characteristics
,
①
②
I
DRM@VDRM
VS @IS
VT@ IT
IH
CO
Part
μA
V
V
mA
V
A
mA
min
30
pF
Marking
Number
max
5
max
25
max max max
max
60
60
60
60
50
50
50
50
45
45
40
40
35
35
35
CP0080SC
CP0220SC
CP0300SC
CP0640SC
CP0720SC
CP0900SC
CP1100SC
CP1300SC
CP1500SC
CP1800SC
CP2300SC
CP2600SC
CP3100SC
CP3500SC
CP3800SC
6
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
CP-8C
CP22C
CP03C
CP06C
CP07C
CP09C
CP11C
CP13C
CP15C
CP18C
CP23C
CP26C
CP31C
CP35C
CP38C
5
18
30
30
5
25
40
30
5
58
77
120
120
120
120
120
120
120
120
120
120
120
120
5
65
87
5
75
98
5
90
130
160
180
220
260
300
350
400
450
5
120
140
170
190
220
275
320
340
5
5
5
5
5
5
5
① Vs is measured at 100KV/s
② Off-state capacitance is measured in VDC=2V, VRMS=1V, f=1MHz
Surge Ratings
IPP (A) min
Series
2×10us
500
8×20us
400
10×360us
175
10×1000us
100
C
2
H
igh Diode Semiconductor
Typical Characteristics
FIG.1: tr × td pulse waveform
FIG.2: Reflow condition
%IPP
tp
T
T
P
tr = rise time to peak value
td = decay time to half value
Critical Zone
to T
Ramp-up
T
L
P
Peak value
100
50
0
L
tL
T
S(max)
Ramp-down
Half value
Preheat
T
S(min)
t
s
t(μs)
25
time to peak temperatue
Time
t
r
t
d
0
(t 25℃ to peak)
FIG.3: Normalized Vs change vs. junction
temperature
FIG.4: Normalized DC holding current vs. case
temperature
Percent of Vs change(%)
IH(Tj)/IH(Tj=25℃)
2.0
12
1.8
1.6
1.4
1.2
8
4
0
25℃
25℃
1.0
0.8
-4
-8
0.6
0.4
Tj(℃)
40 60 80 100 120 140 160
TC (℃)
40 60 80 100 120 140 160
-40 -20
0
20
-40 -20
0
20
3
H
igh Diode Semiconductor
SMB
0.155(3.94)
0.130(3.30)
0.087 (2.20)
0.071 (1.80)
0.180(4.57)
0.160(4.06)
0.012(0.305)
0.006(0.152)
0.096(2.44)
0.084(2.13)
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
0.220(5.59)
0.205(5.21)
Dimensions in inches and (millimeters)
SMB
4.26
1.8
JSHD
JSHD
4
H
igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices-SMB
5
H
igh Diode Semiconductor
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