DB3-DO-35 [HDSEMI]
DO-35 Glass-Encapsulate Diodes;
| 型号： | DB3-DO-35 |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | DO-35 Glass-Encapsulate Diodes |
| 文件： | 总4页 (文件大小：1697K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DB3
DO-35 Glass-Encapsulate Diodes
Small Signal Fast Switching Diodes
Features
DO-35
●VBO 28V-36V
Symbols
Parameters
Value
Units
Power Disspation on printed
Circuit(L=10mm)
PC
TA=50℃
150
mW
A
tp=10us
f=100Hz
ITRM
TSTG/TJ
Repetitive Peak on-state Current
2.0
Storage and Operating Junction Temperature
-40 to+125
℃
Electrical Characteristics (T =25℃ Unless otherwise specified）
a
Value
Symbols
Parameters
Test Condition
Units
28
32
Min
Typ
C=22Nf(Note2)
See diagram1
VBO
Break Voltage(Note 2)
V
Max
Max
36
3
I+VBOI-
I-VBOI
C=22Nf(Note2)
See diagram1
△I=(IBO to IF=10Ma)
See diagram1
Breakover Voltage Symmetry
V
V
Min
I±△VI
Dynamic Breakover Voltage(Note1)
5
VO
IBO
Tr
Output Voltage (Note1)
Breakover Current (Note1)
Rise Time(Note1)
See diagram2
C=22Nf(Note2)
See diagram3
Min
Max
Typ
5
V
100
1.5
uA
uS
VB=0.5 VBO max
See diagram1
IB
Leakage Current(Note1)
Max
10
uA
1
H
igh Diode Semiconductor
Typical Characteristics
4
H
igh Diode Semiconductor
DO-35
Unit: in inches (millimeters)
JSHD
JSHD
5
H
igh Diode Semiconductor
Ammo Box Packaging Specifications For Axial Lead Rectifiers
6
H
igh Diode Semiconductor
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