ER501G [HDSEMI]
DO-27 Plastic-Encapsulate Diodes;
| 型号： | ER501G |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | DO-27 Plastic-Encapsulate Diodes |
| 文件： | 总4页 (文件大小：2118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ER501G THRU ER506G
HD ZC95
DO-27 Plastic-Encapsulate Diodes
Super Fast Recovery Rectifier Diode
Features
●I
5.0A
100V-600V
●High surge current capability
o
DO-27
●VRRM
Glass passivated chip
●
●
Polarity: Color band denotes cathode
Applications
●Rectifier
Marking
ER50XG
●
X:From 1 to 6
ER50
3G
Item
Symbol Unit
1G
2G
4G
6G
I
100
200
300
210
400
600
V
MaximumRMS Voltage
V
RMS
70
140
280
420
60Hz Half-sine wave, Resistance
load, Ta=50℃
IF(AV)
5.0
60Hz Half-sine wave,1 cycle,
Ta=25℃
150
IFSM
Electrical Characteristics (T =25℃ Unless otherwise specified)
a
ER50
Item
Symbol
Unit
V
Test Condition
1G
2G
3G
4G
6G
VFM
IFM=5.0A
0.95
1.25
1.7
Peak Forward Voltage
Peak Reverse Current
Reverse Recovery time
IRRM1
IRRM2
T =25℃
5
a
μA
VRM=VRRM
T =125℃
a
50
35
IF=0.5A IR=1A
trr
ns
IRR=0.25A
Rθ
55
20
Between junction and ambient
J-A
Thermal
Resistance(Typical)
℃/W
Rθ
Between junction and lead
J-L
100
50
Junction Capacitance
CJ
pF
1
H
igh Diode Semiconductor
Typical Characteristics
︶
FIG.1:
FORWARD CURRENT DERATING CURVE
5.0
4.0
3.0
2.0
S
ingle Phase
Half Wave 60HZ
Resisteve or
1. 0
1.0
Inductive Load
0.375''(9.5mm)
Lead Length
0
100
0
50
150
Ta(℃)
FIG.4:TYPICAL REVERSE CHARACTERISTICS
1000
ER501G-ER502G
ER503G-ER504G
100
10
Tj=125
℃
ER506G
Tj=100℃
1.0
Tj=25
℃
0.1
0.01
0
20
40
60
80
100
Voltage(%)
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
I
D
t
rr
IF
RL
IF
VR
t
0
I
RR
I
R
2
H
igh Diode Semiconductor
DO-27
Unit: in inches (millimeters)
JSHD
JSHD
3
H
igh Diode Semiconductor
Ammo Box Packaging Specifications For Axial Lead Rectifiers
4
H
igh Diode Semiconductor
相关型号：
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